25TTS12 SCR Thyristor Equivalent & Substitute Parts

Part Overview

The 25TTS12 is a 1.2 kV, 25 A standard recovery SCR (silicon-controlled rectifier) in TO-220-3 through-hole packaging manufactured by Vishay General Semiconductor - Diodes Division. This component is classified as obsolete, making equivalent and substitute parts necessary for new designs and ongoing production support. The 25TTS12 serves in applications requiring controlled rectification and switching at moderate voltage and current levels with standard recovery characteristics.

Substiute Parts

25TTS12
Vishay General Semiconductor - Diodes DivisionIn Stock: 166125TTS12 Datasheet
25TTS12
Current Part
VS-25TTS12HM3
Vishay General Semiconductor - Diodes DivisionIn Stock: 1832VS-25TTS12HM3 Datasheet
VS-25TTS12HM3
MFR Recommended
CS19-12HO1
IXYSIn Stock: 3134CS19-12HO1 Datasheet
CS19-12HO1
MFR Recommended
SCT1225B
SMC Diode SolutionsIn Stock: 1660SCT1225B Datasheet
SCT1225B
MFR Recommended

Key Parameters

Parameter Value Unit
Voltage - Off State 1.2 kV
Current - On State (It RMS) 25 A
Voltage - Gate Trigger (Vgt) Max 2 V
Current - Gate Trigger (Igt) Max 45 mA
Voltage - On State (Vtm) Max 1.25 V
Current - Hold (Ih) Max 100 mA
Operating Temperature Range -40 to 125 °C
Package / Case TO-220-3
Mounting Type Through Hole
SCR Type Standard Recovery

Substitute Part Grouping Explanation

Substitution for the 25TTS12 is determined by the following critical parameters:

  • Voltage Rating (Off State): Must equal 1.2 kV
  • Current Rating (RMS): Must equal or exceed 25 A
  • Package / Case: Must be TO-220-3 through-hole
  • SCR Type: Must be Standard Recovery
  • Operating Temperature Range: Must cover -40°C to 125°C
  • Gate Trigger Parameters: Vgt and Igt must be within acceptable control circuit tolerances

Substitute parts are grouped based on their ability to meet these electrical and mechanical requirements while maintaining functional compatibility in the same thermal and spatial envelope.

Parameter Comparison

Parameter 25TTS12 VS-25TTS12HM3 CS19-12HO1 SCT1225B
Manufacturer Vishay Vishay IXYS SMC Diode Solutions
Voltage - Off State (kV) 1.2 1.2 1.2 1.2
Current - On State (It RMS) (A) 25 25 29 25
Voltage - Gate Trigger Max (V) 2 2 1.5 1.5
Current - Gate Trigger Max (mA) 45 45 28 40
Voltage - On State Max (V) 1.25 1.25 1.6 1.6
Current - Hold Max (mA) 100 150 50 120
Operating Temperature (°C) -40 to 125 -40 to 125 -40 to 125 -40 to 125
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3
Product Status Obsolete Active Active Obsolete
RoHS Status Non-compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

VS-25TTS12HM3 (Vishay) is the primary recommended substitute. This part maintains identical electrical specifications to the 25TTS12 while offering active product status and ROHS3 compliance. The automotive-grade qualification (AEC-Q101) provides additional reliability assurance for demanding applications. This part is the direct functional equivalent with enhanced regulatory compliance.

CS19-12HO1 (IXYS) is a secondary substitute suitable for applications where higher current capacity (29 A vs. 25 A) is acceptable. This part features lower gate trigger voltage (1.5 V vs. 2 V) and current (28 mA vs. 45 mA), which may require gate drive circuit adjustment. The higher on-state voltage (1.6 V vs. 1.25 V) results in increased power dissipation. ROHS3 compliance and active status support long-term availability.

SCT1225B (SMC Diode Solutions) is an alternative with matching current rating and identical voltage specifications. This part is obsolete, limiting its suitability for new designs despite ROHS3 compliance. The lower on-state voltage (1.6 V) and reduced off-state leakage current (10 µA vs. 500 µA) may provide performance benefits in specific applications, but obsolescence status restricts procurement.

Frequently Asked Questions (FAQ)

Q: Can I use CS19-12HO1 as a direct replacement for 25TTS12?

A: CS19-12HO1 is electrically compatible but requires gate drive circuit evaluation. The lower gate trigger voltage (1.5 V vs. 2 V) and current (28 mA vs. 45 mA) may necessitate adjustments to gate control circuitry. The higher on-state voltage increases power dissipation by approximately 28%. Verify thermal management and gate drive compatibility before implementation.

Q: What is the difference between VS-25TTS12HM3 and the original 25TTS12?

A: VS-25TTS12HM3 is the active-status equivalent with identical electrical specifications. The primary differences are product status (active vs. obsolete), RoHS compliance (ROHS3 vs. non-compliant), and automotive qualification (AEC-Q101). Electrical performance and thermal characteristics are equivalent.

Q: Are all substitute parts in the same TO-220-3 package?

A: Yes. All listed substitutes use TO-220-3 through-hole packaging, ensuring mechanical and thermal compatibility with existing PCB layouts and heatsink mounting arrangements.

Q: Which substitute has the best long-term availability?

A: VS-25TTS12HM3 and CS19-12HO1 both have active product status, supporting long-term procurement. VS-25TTS12HM3 is preferred due to identical specifications and automotive qualification. SCT1225B is obsolete and should not be selected for new designs.

Q: Do these substitutes require PCB layout changes?

A: No. All substitutes maintain TO-220-3 package dimensions and pin configuration, requiring no PCB modifications. Thermal management and gate drive circuitry should be verified based on the selected substitute's electrical characteristics.

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