20ETS12 General Purpose Rectifier Diode Equivalent & Substitute Parts

Part Overview

The Vishay 20ETS12 is a general purpose rectifier diode rated for 1200 V DC reverse voltage and 20 A average rectified current in a TO-220AC through-hole package. This component is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement. The 20ETS12 operates across a junction temperature range of -40°C to 150°C with standard recovery characteristics and is RoHS non-compliant. Active equivalent and substitute parts are available from multiple manufacturers including Vishay, IXYS, Microchip Technology, and Infineon Technologies.

Substiute Parts

20ETS12
Vishay General Semiconductor - Diodes DivisionIn Stock: 1327120ETS12 Datasheet
20ETS12
Current Part
VS-20ETS12THM3
Vishay General Semiconductor - Diodes DivisionIn Stock: 2375VS-20ETS12THM3 Datasheet
VS-20ETS12THM3
Parametric Equivalent
APT15DQ120KG
Microchip TechnologyIn Stock: 15839APT15DQ120KG Datasheet
APT15DQ120KG
MFR Recommended
DSEI12-12A
IXYSIn Stock: 22236DSEI12-12A Datasheet
DSEI12-12A
MFR Recommended
DSEI20-12A
IXYSIn Stock: 2606DSEI20-12A Datasheet
DSEI20-12A
MFR Recommended
DSEP12-12A
IXYSIn Stock: 24572DSEP12-12A Datasheet
DSEP12-12A
MFR Recommended
DSEP12-12B
IXYSIn Stock: 2284DSEP12-12B Datasheet
DSEP12-12B
MFR Recommended
DSEP29-12A
IXYSIn Stock: 2741DSEP29-12A Datasheet
DSEP29-12A
MFR Recommended
DSEP8-12A
IXYSIn Stock: 2892DSEP8-12A Datasheet
DSEP8-12A
MFR Recommended
IDP18E120XKSA1
Infineon TechnologiesIn Stock: 2301IDP18E120XKSA1 Datasheet
IDP18E120XKSA1
MFR Recommended
IDP30E120XKSA1
Infineon TechnologiesIn Stock: 1640IDP30E120XKSA1 Datasheet
IDP30E120XKSA1
MFR Recommended
RHRP30120
onsemiIn Stock: 37493RHRP30120 Datasheet
RHRP30120
MFR Recommended
RHRP8120
onsemiIn Stock: 45327RHRP8120 Datasheet
RHRP8120
MFR Recommended
STTH1212D
STMicroelectronicsIn Stock: 7351STTH1212D Datasheet
STTH1212D
MFR Recommended
STTH3012D
STMicroelectronicsIn Stock: 1421STTH3012D Datasheet
STTH3012D
MFR Recommended
STTH512D
STMicroelectronicsIn Stock: 5892STTH512D Datasheet
STTH512D
MFR Recommended
STTH812D
STMicroelectronicsIn Stock: 21061STTH812D Datasheet
STTH812D
MFR Recommended

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 1200 V
Current - Average Rectified (Io) 20 A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 20 A V
Speed Standard Recovery >500ns, > 200mA (Io) -
Current - Reverse Leakage @ Vr 100 µA @ 1200 V
Mounting Type Through Hole -
Package / Case TO-220-2 -
Operating Temperature - Junction -40 to 150 °C
Product Status Obsolete -

Substitute Part Grouping Explanation

Substitute parts for the 20ETS12 are selected based on the following critical parameters:

Primary Matching Criteria:

  • Voltage - DC Reverse (Vr) (Max): 1200 V (exact match required)
  • Mounting Type: Through Hole (exact match required)
  • Package / Case: TO-220-2 (exact match required)

Secondary Compatibility Criteria:

  • Current - Average Rectified (Io): 20 A nominal, with acceptable range from 10 A to 50 A depending on application requirements
  • Operating Temperature Range: Minimum -40°C junction temperature required
  • Technology: Standard rectifier diode technology

Substitute parts are grouped into two categories:

Category 1: Direct Parametric Equivalents - Parts matching the 20 A current rating with identical voltage and package specifications. These include the Vishay VS-20ETS12THM3 (active, automotive-qualified) and IXYS HiPerFRED™ series parts rated at 15 A to 30 A.

Category 2: Functional Alternatives - Parts with the same 1200 V voltage rating and TO-220-2 package but with different current ratings (10 A to 50 A) and recovery characteristics. These accommodate applications where the exact 20 A specification is not critical or where higher current capacity is beneficial.

Parameter Comparison

Manufacturer Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) [V] Speed Ir @ Vr [µA] Package Product Status RoHS Status
20ETS12 Vishay General Semiconductor - Diodes Division 1200 20 1.1 @ 20 A Standard Recovery >500ns 100 @ 1200 V TO-220-2 Obsolete RoHS non-compliant
VS-20ETS12THM3 Vishay General Semiconductor - Diodes Division 1200 20 1.1 @ 20 A Standard Recovery >500ns 100 @ 1200 V TO-220-2 Active ROHS3 Compliant
APT15DQ120KG Microchip Technology 1200 15 3.3 @ 15 A Fast Recovery ≤500ns 100 @ 1200 V TO-220-2 Active ROHS3 Compliant
DSEI12-12A IXYS 1200 11 2.6 @ 12 A Fast Recovery ≤500ns 250 @ 1200 V TO-220-2 Active ROHS3 Compliant
DSEI20-12A IXYS 1200 17 2.15 @ 12 A Fast Recovery ≤500ns 750 @ 1200 V TO-220-2 Active ROHS3 Compliant
DSEP12-12A IXYS 1200 15 2.75 @ 15 A Fast Recovery ≤500ns 100 @ 1200 V TO-220-2 Active ROHS3 Compliant
DSEP12-12B IXYS 1200 15 3.25 @ 15 A Fast Recovery ≤500ns 100 @ 1200 V TO-220-2 Active ROHS3 Compliant
DSEP29-12A IXYS 1200 30 2.75 @ 30 A Fast Recovery ≤500ns 250 @ 1200 V TO-220-2 Active ROHS3 Compliant
DSEP8-12A IXYS 1200 10 2.94 @ 10 A Fast Recovery ≤500ns 60 @ 1200 V TO-220-2 Active ROHS3 Compliant
IDP18E120XKSA1 Infineon Technologies 1200 31 2.15 @ 18 A Fast Recovery ≤500ns 100 @ 1200 V TO-220-2 Active ROHS3 Compliant
IDP30E120XKSA1 Infineon Technologies 1200 50 2.15 @ 30 A Fast Recovery ≤500ns 100 @ 1200 V TO-220-2 Active ROHS3 Compliant

Engineering Selection Recommendations

Primary Recommendation: VS-20ETS12THM3

The Vishay VS-20ETS12THM3 is the direct parametric equivalent to the obsolete 20ETS12. It maintains identical electrical specifications including 1200 V reverse voltage, 20 A average rectified current, and 1.1 V forward voltage at 20 A. The VS-20ETS12THM3 is active in production, ROHS3 compliant, and carries AEC-Q101 automotive qualification. This part is the preferred replacement for direct substitution without circuit redesign.

Secondary Recommendations for Current-Rated Alternatives:

For applications where current capacity can be adjusted, the following active parts provide compliance and performance improvements:

  • DSEP12-12A or DSEP12-12B (IXYS HiPerFRED™ 15 A): Suitable for designs requiring 15 A or less. Both parts are ROHS3 compliant with extended operating temperature range (-55°C to 175°C). DSEP12-12A offers lower forward voltage (2.75 V @ 15 A) compared to DSEP12-12B (3.25 V @ 15 A).

  • DSEP29-12A (IXYS HiPerFRED™ 30 A): Suitable for designs requiring higher current capacity up to 30 A. ROHS3 compliant with extended temperature range (-55°C to 175°C) and fast recovery characteristics (40 ns).

  • IDP18E120XKSA1 (Infineon 31 A): Suitable for designs requiring current capacity up to 31 A. ROHS3 compliant with fast recovery characteristics (195 ns).

  • IDP30E120XKSA1 (Infineon 50 A): Suitable for designs requiring maximum current capacity up to 50 A. ROHS3 compliant with fast recovery characteristics (243 ns).

All recommended substitutes maintain the 1200 V reverse voltage rating, TO-220-2 package, and through-hole mounting type. All substitute parts are ROHS3 compliant, addressing the RoHS non-compliance status of the original 20ETS12.

Frequently Asked Questions (FAQ)

Q: Can the VS-20ETS12THM3 be used as a direct replacement for the 20ETS12?

A: Yes. The VS-20ETS12THM3 is a direct parametric equivalent with identical voltage (1200 V), current (20 A), forward voltage (1.1 V @ 20 A), and package specifications (TO-220-2). No circuit modifications are required. The primary differences are product status (active vs. obsolete) and RoHS compliance (ROHS3 vs. non-compliant).

Q: What is the difference between standard recovery and fast recovery diodes?

A: The 20ETS12 features standard recovery with recovery time greater than 500 ns. Substitute parts with fast recovery characteristics (≤500 ns) have shorter reverse recovery times, which reduces switching losses and improves efficiency in high-frequency applications. Fast recovery diodes are suitable for applications where the 20ETS12 was used, as they provide equal or better performance.

Q: Can I use a 15 A rated diode (DSEP12-12A or DSEP12-12B) in place of the 20 A rated 20ETS12?

A: A 15 A rated diode can be used only if the application circuit operates at 15 A or below. The 15 A rating represents the maximum average rectified current; exceeding this rating will cause excessive heat generation and component failure. Circuit analysis is required to confirm that peak and average currents do not exceed 15 A.

Q: What is the advantage of using a 30 A or 50 A rated substitute like DSEP29-12A or IDP30E120XKSA1?

A: Higher current-rated diodes provide thermal margin and reduced power dissipation at the same operating current. For a 20 A application, using a 30 A or 50 A rated diode allows operation at lower junction temperature, extending component life and improving reliability. These parts are suitable for designs where thermal performance is a concern.

Q: Are all substitute parts compatible with the TO-220-2 package footprint?

A: Yes. All substitute parts listed use the TO-220-2 package with through-hole mounting. Physical dimensions and pin configurations are identical, allowing direct PCB footprint compatibility without layout modifications.

Q: What is the operating temperature range difference between the 20ETS12 and substitute parts?

A: The 20ETS12 operates from -40°C to 150°C junction temperature. Most substitute parts extend this range to -55°C to 175°C (IXYS HiPerFRED™ series and some Infineon parts) or -55°C to 150°C (Infineon IDP series). Extended temperature range provides design flexibility for applications with extreme environmental conditions.

Q: Why do some substitute parts have higher reverse leakage current (Ir)?

A: Reverse leakage current varies by manufacturer and technology. The 20ETS12 specifies 100 µA @ 1200 V. Some substitutes (DSEI20-12A at 750 µA, DSEP29-12A at 250 µA) have higher leakage. Higher leakage increases standby power consumption but does not affect forward conduction performance. Circuit analysis is required only if standby power is a critical design parameter.

Q: Is RoHS compliance important for my application?

A: RoHS3 compliance is mandatory for products sold in the European Union and many other markets. The 20ETS12 is RoHS non-compliant. All listed substitute parts are ROHS3 compliant, making them suitable for regulated markets. If your application has no RoHS requirements, compliance status does not affect electrical performance.

Q: What does AEC-Q101 qualification mean for the VS-20ETS12THM3?

A: AEC-Q101 is an automotive industry qualification standard for discrete semiconductors. The VS-20ETS12THM3 carries this qualification, indicating it meets automotive reliability and quality requirements. This qualification is relevant only for automotive applications; non-automotive designs do not require this certification.

Request Quote (Ships tomorrow)