20ETF06FP Equivalent & Substitute Parts

Part Overview

The 20ETF06FP is a general-purpose rectifier diode manufactured by Vishay General Semiconductor - Diodes Division, rated for 600 V DC reverse voltage and 20 A average rectified current in a TO-220AC Full Pack through-hole package. This component is classified as obsolete, indicating that direct replacements from the original manufacturer are no longer in active production. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this diode specification.

Substiute Parts

20ETF06FP
Vishay General Semiconductor - Diodes DivisionIn Stock: 234320ETF06FP Datasheet
20ETF06FP
Current Part
BYC20X-600PQ
WeEn SemiconductorsIn Stock: 13216BYC20X-600PQ Datasheet
BYC20X-600PQ
MFR Recommended
BYC8X-600P,127
WeEn SemiconductorsIn Stock: 4458BYC8X-600P,127 Datasheet
BYC8X-600P,127
MFR Recommended
FFPF10UA60ST
onsemiIn Stock: 17526FFPF10UA60ST Datasheet
FFPF10UA60ST
MFR Recommended
MURF1560G
onsemiIn Stock: 20081MURF1560G Datasheet
MURF1560G
MFR Recommended
RFNL10TJ6SGC9
Rohm SemiconductorIn Stock: 5502RFNL10TJ6SGC9 Datasheet
RFNL10TJ6SGC9
MFR Recommended
RFNL15TJ6SGC9
Rohm SemiconductorIn Stock: 1285RFNL15TJ6SGC9 Datasheet
RFNL15TJ6SGC9
MFR Recommended
RFNL20TJ6SGC9
Rohm SemiconductorIn Stock: 1906RFNL20TJ6SGC9 Datasheet
RFNL20TJ6SGC9
MFR Recommended
RFNL5TJ6SGC9
Rohm SemiconductorIn Stock: 1893RFNL5TJ6SGC9 Datasheet
RFNL5TJ6SGC9
MFR Recommended
RFV12TJ6SGC9
Rohm SemiconductorIn Stock: 1624RFV12TJ6SGC9 Datasheet
RFV12TJ6SGC9
MFR Recommended
RFV15TJ6SGC9
Rohm SemiconductorIn Stock: 2792RFV15TJ6SGC9 Datasheet
RFV15TJ6SGC9
MFR Recommended
RFV8TJ6SGC9
Rohm SemiconductorIn Stock: 2458RFV8TJ6SGC9 Datasheet
RFV8TJ6SGC9
MFR Recommended
RFVS8TJ6SGC9
Rohm SemiconductorIn Stock: 2875RFVS8TJ6SGC9 Datasheet
RFVS8TJ6SGC9
MFR Recommended
STTH12S06FP
STMicroelectronicsIn Stock: 3787STTH12S06FP Datasheet
STTH12S06FP
MFR Recommended
STTH15AC06FP
STMicroelectronicsIn Stock: 1359STTH15AC06FP Datasheet
STTH15AC06FP
MFR Recommended
UGF5JHC0G
Taiwan Semiconductor CorporationIn Stock: 1197UGF5JHC0G Datasheet
UGF5JHC0G
MFR Recommended

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 600 V
Current - Average Rectified (Io) 20 A
Voltage - Forward (Vf) (Max) @ If 1.3 V @ 20 A V
Speed Classification Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 160 ns
Current - Reverse Leakage @ Vr 100 µA @ 600 V
Mounting Type Through Hole
Package / Case TO-220-2 Full Pack
Operating Temperature - Junction -40 to 150 °C
RoHS Status Non-compliant

Substitute Part Grouping Explanation

Substitute parts for the 20ETF06FP are selected based on strict electrical and mechanical compatibility criteria. The primary substitution parameters are:

  1. Voltage Rating: All substitutes maintain 600 V DC reverse voltage maximum, ensuring compatibility with the original circuit design voltage specifications.

  2. Current Rating: Substitutes are grouped by average rectified current capacity. Direct equivalents operate at 20 A. Parts with lower current ratings (5 A, 8 A, 10 A, 12 A, 15 A) are suitable only for applications where the circuit current demand does not exceed the substitute part's rating.

  3. Package Type: The original part uses TO-220-2 Full Pack configuration. Substitutes employ TO-220-2 Full Pack, TO-220AC Full Pack, or TO-220FP packages, all of which are through-hole mounted and mechanically compatible with standard TO-220 footprints.

  4. Forward Voltage (Vf): The original part specifies 1.3 V @ 20 A. Substitutes with identical or lower forward voltage at equivalent current ratings provide direct functional replacement. Substitutes with higher forward voltage or different current ratings introduce thermal and efficiency variations that must be evaluated within specific application contexts.

  5. Reverse Recovery Time (trr): The original part specifies 160 ns. Substitutes with faster recovery times (35 ns to 150 ns) are electrically compatible and generally provide improved switching performance. Substitutes with slower recovery times remain functionally compatible.

  6. Reverse Leakage Current: The original part specifies 100 µA @ 600 V. Substitutes with lower leakage current (10 µA to 20 µA) provide improved performance characteristics.

  7. Product Status and Compliance: Active status substitutes ensure ongoing availability. RoHS3 compliance substitutes support modern regulatory requirements, whereas the original part is RoHS non-compliant.

Parameter Comparison

Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) [V] trr [ns] Ir @ Vr [µA] Package Status RoHS
20ETF06FP Vishay 600 20 1.3 @ 20A 160 100 @ 600V TO-220-2 Full Pack Obsolete Non-compliant
BYC20X-600PQ WeEn 600 20 2.5 @ 20A 35 10 @ 600V TO-220-2 Full Pack, Isolated Tab Active ROHS3
BYC8X-600P,127 WeEn 600 8 1.9 @ 8A 18 20 @ 600V TO-220-2 Full Pack, Isolated Tab Active Compliant
FFPF10UA60ST onsemi 600 10 2.3 @ 10A 120 100 @ 600V TO-220-2 Full Pack Obsolete ROHS3
MURF1560G onsemi 600 15 1.5 @ 15A 60 10 @ 600V TO-220-2 Full Pack Active ROHS3
RFNL10TJ6SGC9 Rohm 600 10 1.3 @ 10A 150 10 @ 600V TO-220-2 Active ROHS3
RFNL15TJ6SGC9 Rohm 600 15 1.3 @ 15A 160 10 @ 600V TO-220-2 Full Pack Active ROHS3
RFNL20TJ6SGC9 Rohm 600 20 1.3 @ 20A 180 10 @ 600V TO-220-2 Full Pack Active ROHS3
RFNL5TJ6SGC9 Rohm 600 5 1.3 @ 5A 130 10 @ 600V TO-220-2 Full Pack Active ROHS3
RFV12TJ6SGC9 Rohm 600 12 2.8 @ 12A 45 10 @ 600V TO-220-2 Full Pack Active ROHS3
RFV15TJ6SGC9 Rohm 600 15 2.8 @ 15A 50 10 @ 600V TO-220-2 Full Pack Active ROHS3

Engineering Selection Recommendations

Direct Equivalent (20 A Rating)

The RFNL20TJ6SGC9 (Rohm Semiconductor) provides the closest functional equivalent to the 20ETF06FP. Both parts maintain identical voltage rating (600 V), current rating (20 A), and forward voltage specification (1.3 V @ 20 A). The RFNL20TJ6SGC9 is active in production status and RoHS3 compliant, addressing the obsolescence and regulatory compliance limitations of the original part. Reverse recovery time differs marginally (180 ns versus 160 ns), remaining within fast recovery classification. Reverse leakage current is significantly lower (10 µA versus 100 µA), providing improved performance.

The BYC20X-600PQ (WeEn Semiconductors) is an alternative 20 A substitute with active production status and RoHS3 compliance. This part exhibits faster reverse recovery time (35 ns) and lower reverse leakage current (10 µA). Forward voltage is elevated at 2.5 V @ 20 A compared to the original 1.3 V specification, resulting in increased power dissipation and thermal generation that must be evaluated within specific thermal management constraints.

Reduced Current Ratings (Below 20 A)

The MURF1560G (onsemi) operates at 15 A with 600 V rating, active status, and RoHS3 compliance. Forward voltage is 1.5 V @ 15 A, closely matching the original specification. This part is suitable only for applications where circuit current demand does not exceed 15 A.

The RFNL15TJ6SGC9 (Rohm Semiconductor) provides 15 A capacity at 600 V with forward voltage of 1.3 V @ 15 A and active production status with RoHS3 compliance.

Lower current-rated parts (RFNL10TJ6SGC9 at 10 A, RFV12TJ6SGC9 at 12 A, RFNL5TJ6SGC9 at 5 A, and BYC8X-600P,127 at 8 A) are suitable only for applications with proportionally reduced current requirements.

Compliance and Availability Considerations

All recommended active-status substitutes are RoHS3 compliant, supporting modern manufacturing and environmental regulatory requirements. The original 20ETF06FP is RoHS non-compliant and obsolete, making transition to compliant alternatives necessary for new designs and ongoing production support.

Frequently Asked Questions (FAQ)

Q: Can the RFNL20TJ6SGC9 directly replace the 20ETF06FP in existing designs?

A: The RFNL20TJ6SGC9 maintains identical voltage (600 V), current (20 A), and forward voltage (1.3 V @ 20 A) specifications as the 20ETF06FP. Both use TO-220-2 Full Pack through-hole packages compatible with standard PCB footprints. The RFNL20TJ6SGC9 is active in production and RoHS3 compliant, addressing obsolescence and regulatory requirements. Reverse recovery time differs marginally (180 ns versus 160 ns), remaining within fast recovery classification. Direct substitution is supported.

Q: What is the difference between the BYC20X-600PQ and RFNL20TJ6SGC9 as 20 A substitutes?

A: Both parts maintain 600 V and 20 A ratings with active production status and RoHS3 compliance. The RFNL20TJ6SGC9 matches the original forward voltage specification at 1.3 V @ 20 A, while the BYC20X-600PQ specifies 2.5 V @ 20 A. The elevated forward voltage in the BYC20X-600PQ increases power dissipation and heat generation. The BYC20X-600PQ exhibits faster reverse recovery time (35 ns versus 180 ns). Selection depends on thermal management capability and switching performance requirements within the specific application.

Q: Can I use a 15 A rated diode in place of the 20 A 20ETF06FP?

A: A 15 A rated substitute is suitable only if the circuit current demand does not exceed 15 A. The MURF1560G and RFNL15TJ6SGC9 both provide 15 A capacity at 600 V with active status and RoHS3 compliance. Using a lower-rated part in a circuit designed for 20 A operation results in component overstress, reduced reliability, and potential failure. Verify actual circuit current requirements before selecting a reduced-capacity substitute.

Q: Are the TO-220-2 Full Pack and TO-220AC Full Pack packages mechanically interchangeable?

A: Both TO-220-2 Full Pack and TO-220AC Full Pack configurations are through-hole mounted packages with compatible lead spacing and PCB footprints. The primary difference is the tab isolation feature in some variants. Both package types mount to standard TO-220 footprints. Mechanical interchangeability is supported for PCB layout purposes.

Q: Why does the RFNL20TJ6SGC9 have a higher reverse recovery time (180 ns) than the original 20ETF06FP (160 ns)?

A: Both parts are classified as fast recovery diodes with recovery times within the ≤ 500 ns specification for > 200 mA current. The 20 ns difference (180 ns versus 160 ns) represents a marginal variation within the fast recovery classification and does not affect functional compatibility in standard rectifier applications. Reverse recovery time impacts switching transient behavior; faster recovery reduces switching losses in high-frequency applications.

Q: Is the original 20ETF06FP still available for purchase?

A: The 20ETF06FP is classified as obsolete, indicating discontinued production by the original manufacturer. While inventory may exist in distribution channels (2256 pieces noted as in stock), long-term availability is not assured. Active-status substitutes such as the RFNL20TJ6SGC9 and BYC20X-600PQ provide reliable alternatives with ongoing manufacturer support and production continuity.

Q: What does RoHS3 compliance mean for the substitute parts?

A: RoHS3 compliance indicates conformance to the Restriction of Hazardous Substances Directive, restricting the use of specified hazardous materials including lead, cadmium, mercury, and certain flame retardants. RoHS3 compliant parts support modern manufacturing standards and environmental regulations. The original 20ETF06FP is RoHS non-compliant, making transition to compliant alternatives necessary for designs subject to regulatory requirements.

Q: How does forward voltage affect component selection?

A: Forward voltage (Vf) determines the voltage drop across the diode during conduction and directly impacts power dissipation. The original 20ETF06FP specifies 1.3 V @ 20 A. Substitutes with identical forward voltage (RFNL20TJ6SGC9 at 1.3 V @ 20 A) provide equivalent thermal performance. Substitutes with higher forward voltage (BYC20X-600PQ at 2.5 V @ 20 A) generate increased heat, requiring thermal management evaluation. Substitutes with lower forward voltage reduce power dissipation and heat generation.

Q: What is reverse leakage current and why does it matter?

A: Reverse leakage current (Ir) is the small current flowing through the diode when reverse biased. The original 20ETF06FP specifies 100 µA @ 600 V. Most active substitutes specify 10 µA @ 600 V, representing a tenfold reduction. Lower reverse leakage improves efficiency, reduces standby power consumption, and enhances circuit performance in precision applications. This parameter is particularly important in high-impedance circuits and low-power applications.

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