20ETF02 Equivalent & Substitute Parts

Part Overview

The 20ETF02 is a general-purpose rectifier diode manufactured by Vishay General Semiconductor - Diodes Division, rated for 200 V DC reverse voltage and 20 A average rectified current in a TO-220AC through-hole package. This part is classified as obsolete, making equivalent and substitute parts necessary for new designs and ongoing production requirements. The 20ETF02 operates across a junction temperature range of -40°C to 150°C with a forward voltage of 1.3 V at 20 A and a reverse recovery time of 160 ns.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	200	V
Current - Average Rectified (Io)	20	A
Voltage - Forward (Vf) (Max) @ If	1.3 V @ 20 A	V
Reverse Recovery Time (trr)	160	ns
Current - Reverse Leakage @ Vr	100 µA @ 200 V	µA
Speed Classification	Fast Recovery ≤ 500ns, > 200mA (Io)	—
Mounting Type	Through Hole	—
Package / Case	TO-220-2	—
Operating Temperature - Junction	-40 to 150	°C
Product Status	Obsolete	—

Substitute Part Grouping Explanation

Substitute parts for the 20ETF02 are grouped based on the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Voltage - DC Reverse (Vr) (Max): 200 V (exact match required)
Current - Average Rectified (Io): 20 A (exact match required for full-rated substitution)
Mounting Type: Through Hole
Package / Case: TO-220-2 or TO-220AC (mechanically compatible)
Speed Classification: Fast Recovery ≤ 500ns, > 200mA (Io)

Substitution Categories:

Category 1: Direct Parametric Equivalent The VS-20ETF02-M3 is a parametric equivalent manufactured by Vishay General Semiconductor - Diodes Division. It maintains identical electrical ratings (200 V, 20 A) and mechanical compatibility while offering improved reverse recovery time (60 ns versus 160 ns) and active product status with RoHS3 compliance.

Category 2: Manufacturer-Recommended Full-Rated Substitutes The MUR2020RG (onsemi) is a direct full-rated substitute matching 200 V and 20 A specifications. It provides active product status, RoHS3 compliance, and improved reverse recovery time (95 ns).

Category 3: Manufacturer-Recommended Current-Reduced Substitutes Parts including MUR1520G (15 A), STTH1502D (15 A), STTH1502DI (15 A), STTH1202D (12 A), BYW29-200G (8 A), BYW80-200G (8 A), MUR820G (8 A), and MUR820-BP (8 A) maintain the 200 V voltage rating but operate at reduced current ratings. These substitutes are applicable only when circuit design permits operation at lower current levels.

All substitute parts maintain the 200 V reverse voltage rating, fast recovery speed classification, and through-hole mounting configuration. Differences in current rating, reverse recovery time, forward voltage, and reverse leakage current are documented in the parameter comparison table.

Parameter Comparison

Part Number	Manufacturer	Vr (Max) [V]	Io [A]	Vf (Max) [V]	trr [ns]	Ir @ Vr [µA]	Package	Product Status	RoHS Status
20ETF02	Vishay	200	20	1.3 @ 20 A	160	100 @ 200 V	TO-220AC	Obsolete	Non-compliant
VS-20ETF02-M3	Vishay	200	20	1.3 @ 20 A	60	100 @ 200 V	TO-220AC	Active	RoHS3 Compliant
MUR2020RG	onsemi	200	20	1.1 @ 20 A	95	50 @ 200 V	TO-220-2	Active	RoHS3 Compliant
MUR1520G	onsemi	200	15	1.05 @ 15 A	35	10 @ 200 V	TO-220-2	Active	RoHS3 Compliant
STTH1502D	STMicroelectronics	200	15	1.1 @ 15 A	36	10 @ 200 V	TO-220AC	Active	RoHS3 Compliant
STTH1502DI	STMicroelectronics	200	15	1.1 @ 15 A	36	10 @ 200 V	TO-220AC ins	Active	RoHS3 Compliant
STTH1202D	STMicroelectronics	200	12	1.1 @ 12 A	35	10 @ 200 V	TO-220AC	Active	RoHS3 Compliant
BYW29-200G	onsemi	200	8	1.3 @ 20 A	35	5 @ 200 V	TO-220-2	Active	RoHS3 Compliant
BYW80-200G	onsemi	200	8	1.25 @ 22 A	35	10 @ 200 V	TO-220-2	Active	RoHS3 Compliant
MUR820G	onsemi	200	8	0.975 @ 8 A	35	5 @ 200 V	TO-220-2	Active	RoHS3 Compliant
MUR820-BP	Micro Commercial Co	200	8	0.975 @ 8 A	35	5 @ 200 V	TO-220AC	Active	Not specified

Engineering Selection Recommendations

For Direct Replacement (20 A Rating Maintained):

The VS-20ETF02-M3 is the primary equivalent substitute. It is manufactured by the same supplier (Vishay General Semiconductor - Diodes Division), maintains identical electrical ratings (200 V, 20 A), and provides superior performance characteristics including reduced reverse recovery time (60 ns versus 160 ns). The VS-20ETF02-M3 carries active product status and RoHS3 compliance, addressing the obsolescence of the original 20ETF02.

The MUR2020RG (onsemi) is an alternative full-rated substitute maintaining 200 V and 20 A specifications. It offers active product status, RoHS3 compliance, and improved reverse recovery time (95 ns). The MUR2020RG exhibits lower forward voltage (1.1 V versus 1.3 V) and reduced reverse leakage current (50 µA versus 100 µA), resulting in improved thermal performance.

For Current-Reduced Applications (Below 20 A):

When circuit design permits operation at reduced current levels, the following substitutes are applicable:

15 A Rating: MUR1520G (onsemi), STTH1502D (STMicroelectronics), or STTH1502DI (STMicroelectronics) maintain 200 V rating with 15 A capacity. All three offer active product status and RoHS3 compliance. The STTH1502DI variant provides electrical isolation via insulated package construction.
12 A Rating: STTH1202D (STMicroelectronics) maintains 200 V rating with 12 A capacity, offering active product status and RoHS3 compliance.
8 A Rating: BYW29-200G, BYW80-200G, MUR820G (all onsemi), or MUR820-BP (Micro Commercial Co) maintain 200 V rating with 8 A capacity. All offer active product status. MUR820G and MUR820-BP provide the lowest forward voltage (0.975 V) among 8 A options.

Compliance Considerations:

All recommended substitutes carry RoHS3 compliance status, addressing regulatory requirements absent in the obsolete 20ETF02. The 20ETF02 is classified as RoHS non-compliant. Selection of RoHS3-compliant alternatives ensures compatibility with current environmental and regulatory standards.

Thermal Performance:

Substitutes with reduced reverse recovery time (35 ns to 95 ns versus 160 ns) and lower reverse leakage current exhibit improved thermal characteristics, reducing heat dissipation requirements in power conversion applications.

Frequently Asked Questions (FAQ)

Q: Can the VS-20ETF02-M3 be used as a direct replacement for the 20ETF02?

A: Yes. The VS-20ETF02-M3 is a parametric equivalent manufactured by Vishay General Semiconductor - Diodes Division. It maintains identical voltage (200 V) and current (20 A) ratings, operates across the same junction temperature range (-40°C to 150°C), and is mechanically compatible in TO-220AC packaging. The VS-20ETF02-M3 provides improved reverse recovery time (60 ns versus 160 ns) and carries active product status with RoHS3 compliance.

Q: What is the difference between TO-220AC and TO-220-2 packaging?

A: Both TO-220AC and TO-220-2 designations refer to the same physical through-hole package with two leads. The designations are used interchangeably by different manufacturers. Parts specified as TO-220AC or TO-220-2 are mechanically compatible for board-level mounting and thermal management applications.

Q: Can I use an 8 A rated diode (such as MUR820G) in place of the 20 A rated 20ETF02?

A: An 8 A rated diode can be used only if circuit design and application requirements permit operation at the reduced current rating. The 8 A diode will not support the full 20 A current capacity of the original 20ETF02. Circuit analysis must confirm that maximum operating current does not exceed 8 A. Using an undersized component for full-rated applications will result in component failure and circuit malfunction.

Q: What does "Fast Recovery" mean in the speed classification?

A: Fast Recovery indicates reverse recovery time of 500 nanoseconds or less with reverse current greater than 200 mA. This classification applies to all listed substitutes and the original 20ETF02. Fast recovery diodes are suitable for high-frequency switching applications where rapid reverse bias recovery is required to minimize switching losses.

Q: Why does the MUR2020RG have lower reverse leakage current (50 µA) compared to the 20ETF02 (100 µA)?

A: Lower reverse leakage current indicates improved semiconductor material quality and manufacturing process control. The MUR2020RG, as an active product from onsemi, reflects modern manufacturing standards. Lower reverse leakage reduces standby power consumption and improves thermal performance, particularly in applications with extended idle periods or high ambient temperatures.

Q: Is the STTH1502DI insulated package variant compatible with standard TO-220AC mounting?

A: The STTH1502DI is specified with an insulated TO-220AC package variant (TO-220-2 Insulated). This variant provides electrical isolation between the semiconductor junction and the mounting surface, eliminating the need for external isolation hardware. Standard TO-220AC parts (such as STTH1502D) require direct thermal contact to a grounded heatsink. Selection between insulated and non-insulated variants depends on circuit isolation requirements and thermal management design.

Q: Can I mix different substitute parts in the same circuit or application?

A: Mixing different substitute parts with different current ratings, forward voltages, or reverse recovery times in the same circuit is not recommended. Diodes with different electrical characteristics will exhibit unequal current sharing and voltage distribution, resulting in uneven thermal loading and potential component failure. Use a single part number throughout an application or circuit stage.

Q: What is the significance of RoHS3 compliance for the substitute parts?

A: RoHS3 compliance indicates conformance to the Restriction of Hazardous Substances Directive, restricting the use of lead, cadmium, mercury, and other hazardous materials in electronic components. The original 20ETF02 is RoHS non-compliant. All recommended substitutes carry RoHS3 compliance, ensuring compatibility with current environmental regulations and procurement standards for new designs and production.

Q: How does reverse recovery time affect circuit performance?

A: Reverse recovery time (trr) is the interval required for a forward-biased diode to cease conducting after reverse bias is applied. Shorter reverse recovery time reduces switching losses and electromagnetic interference in high-frequency applications. The VS-20ETF02-M3 (60 ns) and MUR2020RG (95 ns) provide improved reverse recovery compared to the original 20ETF02 (160 ns), resulting in lower power dissipation and improved efficiency in switching power supplies and inverter circuits.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message