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1SMB5915B-13 Equivalent & Substitute Parts
Part Overview
The 1SMB5915B-13 is a Zener diode manufactured by Diodes Incorporated, rated at 3.9 V nominal with 550 mW maximum power dissipation in a surface mount SMB (DO-214AA) package. This component is classified as obsolete, indicating discontinuation from the original manufacturer. Identification of equivalent and substitute parts is necessary to maintain design continuity and ensure component availability for production, repair, and redesign applications.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Voltage - Zener (Nom) | 3.9 | V |
| Tolerance | ±5% | — |
| Power - Max | 550 | mW |
| Impedance (Max) | 7.5 | Ohms |
| Current - Reverse Leakage @ Vr | 25 | µA @ 1 V |
| Voltage - Forward (Vf) (Max) @ If | 1.5 | V @ 200 mA |
| Operating Temperature | -65 to 150 | °C |
| Mounting Type | Surface Mount | — |
| Package / Case | DO-214AA, SMB | — |
Substitute Part Grouping Explanation
Substitution of the 1SMB5915B-13 is determined by the following critical parameters:
Primary Matching Criteria:
- Zener voltage: 3.9 V nominal
- Package type: Surface mount SMB (DO-214AA)
- Operating temperature range: -65°C to 150°C
- Mounting type: Surface mount
Secondary Compatibility Factors:
- Power rating: Substitute parts must equal or exceed 550 mW
- Voltage tolerance: ±5% or tighter
- Impedance (Zzt): 7.5 Ohms or lower
- Reverse leakage current: 25 µA @ 1 V or lower
Substitute parts are grouped into two categories based on power dissipation capability:
Category 1 - Higher Power Rating (3 W): Parts with significantly increased power handling capacity, suitable for applications requiring thermal margin or higher current dissipation.
Category 2 - Equivalent Power Rating (2 W): Parts with power ratings between the original 550 mW and 2 W, providing functional equivalence with moderate power increase.
Parameter Comparison
| Part Number | Manufacturer | Vz (Nom) | Tolerance | Power (Max) | Zzt (Max) | Ir @ Vr | Vf (Max) @ If | Temp Range | Package | Status |
|---|---|---|---|---|---|---|---|---|---|---|
| 1SMB5915B-13 | Diodes Inc. | 3.9 V | ±5% | 550 mW | 7.5 Ω | 25 µA @ 1 V | 1.5 V @ 200 mA | -65 to 150°C | DO-214AA, SMB | Obsolete |
| 1SMB5915BT3G | onsemi | 3.9 V | ±5% | 3 W | 7.5 Ω | 25 µA @ 1 V | 1.5 V @ 200 mA | -65 to 150°C | DO-214AA, SMB | Active |
| SMBJ4730/TR13 | Microchip | 3.9 V | ±10% | 2 W | 9 Ω | 50 µA @ 1 V | 1.2 V @ 200 mA | -65 to 150°C | DO-214AA, SMBJ | Active |
| SMBJ4730A/TR13 | Microchip | 3.9 V | ±5% | 2 W | 9 Ω | 50 µA @ 1 V | 1.2 V @ 200 mA | -65 to 150°C | DO-214AA, SMBJ | Active |
| SMBJ4730AE3/TR13 | Microchip | 3.9 V | ±5% | 2 W | 9 Ω | 50 µA @ 1 V | 1.2 V @ 200 mA | -65 to 150°C | DO-214AA, SMBJ | Active |
| SMBJ4730C/TR13 | Microsemi | 3.9 V | ±2% | 2 W | 9 Ω | 50 µA @ 1 V | 1.2 V @ 200 mA | -65 to 150°C | DO-214AA, SMBJ | Active |
| SMBJ4730CE3/TR13 | Microsemi | 3.9 V | ±2% | 2 W | 9 Ω | 50 µA @ 1 V | 1.2 V @ 200 mA | -65 to 150°C | DO-214AA, SMBJ | Active |
| SMBJ4730E3/TR13 | Microchip | 3.9 V | ±10% | 2 W | 9 Ω | 50 µA @ 1 V | 1.2 V @ 200 mA | -65 to 150°C | DO-214AA, SMBJ | Active |
| SMBJ5915A/TR13 | Microchip | 3.9 V | ±10% | 2 W | 7.5 Ω | 25 µA @ 1 V | 1.2 V @ 200 mA | -65 to 150°C | DO-214AA, SMBJ | Active |
| SMBJ5915AE3/TR13 | Microchip | 3.9 V | ±10% | 2 W | 7.5 Ω | 25 µA @ 1 V | 1.2 V @ 200 mA | -65 to 150°C | DO-214AA, SMBJ | Active |
| SMBJ5915B/TR13 | Microchip | 3.9 V | ±5% | 2 W | 7.5 Ω | 25 µA @ 1 V | 1.2 V @ 200 mA | -65 to 150°C | DO-214AA, SMBJ | Active |
Engineering Selection Recommendations
Primary Recommendation: 1SMB5915BT3G (onsemi)
The 1SMB5915BT3G is the most direct functional equivalent. It maintains identical zener voltage (3.9 V), tolerance (±5%), impedance (7.5 Ω), and reverse leakage specifications (25 µA @ 1 V). The increased power rating (3 W versus 550 mW) provides enhanced thermal margin without circuit modification. This part is in active production status with ROHS3 compliance and EAR99 classification, ensuring long-term availability and regulatory alignment.
Secondary Recommendations: SMBJ5915B/TR13 (Microchip)
The SMBJ5915B/TR13 provides functional equivalence with matching zener voltage, tolerance (±5%), impedance (7.5 Ω), and reverse leakage current. The 2 W power rating exceeds the original 550 mW specification. This part is actively produced and ROHS3 compliant. The SMBJ package designation indicates enhanced surge capability compared to standard SMB packages.
Alternative Options: SMBJ5915AE3/TR13 (Microchip)
The SMBJ5915AE3/TR13 matches critical electrical parameters with ±10% tolerance and maintains 7.5 Ω impedance and 25 µA reverse leakage. ROHS3 compliance and active production status support long-term supply continuity.
Tolerance-Optimized Selection: SMBJ4730C/TR13 or SMBJ4730CE3/TR13 (Microsemi)
These parts offer ±2% tolerance, the tightest specification available among substitutes. Both maintain 3.9 V zener voltage and -65°C to 150°C operating range. SMBJ4730CE3/TR13 includes ROHS3 compliance. The 2 W power rating and 9 Ω impedance represent acceptable trade-offs for applications requiring superior voltage accuracy.
Compliance Considerations:
Parts designated with "E3" suffix indicate ROHS3 compliance. Parts without this designation are RoHS non-compliant. Selection should align with end-product regulatory requirements. All recommended substitutes maintain EAR99 classification, ensuring unrestricted export eligibility.
Frequently Asked Questions (FAQ)
Q: Can the 1SMB5915BT3G directly replace the 1SMB5915B-13 without circuit modification?
A: Yes. The 1SMB5915BT3G maintains identical zener voltage (3.9 V), tolerance (±5%), impedance (7.5 Ω), and reverse leakage current (25 µA @ 1 V). The higher power rating (3 W) is a superset of the original 550 mW specification and requires no design changes.
Q: What is the difference between SMB and SMBJ package designations?
A: Both SMB and SMBJ refer to the DO-214AA physical package. The SMBJ designation indicates enhanced surge current capability. Mechanically and electrically, both are compatible in the same PCB footprint.
Q: Why do some substitutes have ±10% tolerance instead of ±5%?
A: Tolerance specifications vary by manufacturer and product line. Parts with ±10% tolerance (such as SMBJ4730E3/TR13) remain functionally equivalent for most applications. Selection should be based on circuit requirements for voltage accuracy. Tighter tolerance parts (±2% or ±5%) are available if precision is critical.
Q: Are all substitute parts ROHS3 compliant?
A: No. Parts designated with the "E3" suffix (such as SMBJ4730AE3/TR13 and SMBJ4730CE3/TR13) are ROHS3 compliant. Parts without this designation are RoHS non-compliant. Verify compliance requirements for your end application before selection.
Q: What is the significance of the higher power ratings (2 W and 3 W) compared to the original 550 mW?
A: Higher power ratings provide increased thermal margin and allow the diode to dissipate more current without exceeding junction temperature limits. This is beneficial for reliability and does not negatively impact circuit performance. No design modification is required.
Q: Can SMBJ4730 series parts substitute for SMBJ5915 series parts?
A: Both series maintain 3.9 V zener voltage and compatible operating temperature ranges. The primary difference is impedance: SMBJ4730 series has 9 Ω maximum impedance, while SMBJ5915 series has 7.5 Ω. SMBJ4730 series also exhibits higher reverse leakage current (50 µA @ 1 V versus 25 µA @ 1 V). These differences are acceptable for most applications but should be evaluated against specific circuit requirements.
Q: What is the inventory status of these substitute parts?
A: All recommended substitutes are in active production with confirmed stock availability. The 1SMB5915BT3G has 15,955 units in stock. SMBJ5915B/TR13 has 689 units available. Microchip and Microsemi SMBJ variants have between 687 and 1,104 units in stock, ensuring supply continuity.
Q: Are there any electrical performance differences in forward voltage characteristics?
A: The original 1SMB5915B-13 specifies 1.5 V maximum forward voltage at 200 mA. Most substitutes specify 1.2 V at 200 mA, representing improved forward voltage performance. This difference is negligible for typical zener diode applications and does not require circuit redesign.
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