1N916ATR Equivalent & Substitute Parts

Part Overview

The 1N916ATR is a general-purpose rectifier diode manufactured by onsemi, rated for 100 V DC reverse voltage and 200 mA average rectified current in a DO-35 through-hole package. This part is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement continuity. The 1N916ATR operates across a junction temperature range of -55°C to 175°C and features a 4 ns reverse recovery time, suitable for small-signal switching applications.

Substiute Parts

1N916ATR
onsemiIn Stock: 10361N916ATR Datasheet
1N916ATR
Current Part
1N4447
Microchip TechnologyIn Stock: 12381N4447 Datasheet
1N4447
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1N914B
Taiwan Semiconductor CorporationIn Stock: 202141N914B Datasheet
1N914B
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1N4148TR
Fairchild SemiconductorIn Stock: 2404251N4148TR Datasheet
1N4148TR
Parametric Equivalent
1N914BTR
Fairchild SemiconductorIn Stock: 602781N914BTR Datasheet
1N914BTR
Parametric Equivalent
1N914TR
Fairchild SemiconductorIn Stock: 22511N914TR Datasheet
1N914TR
Parametric Equivalent
1N4149
Microchip TechnologyIn Stock: 8871N4149 Datasheet
1N4149
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1N4150-1
Microchip TechnologyIn Stock: 38761N4150-1 Datasheet
1N4150-1
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1N4446
Microchip TechnologyIn Stock: 239891N4446 Datasheet
1N4446
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1N4454
Microchip TechnologyIn Stock: 103971N4454 Datasheet
1N4454
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1N4454-1
Microchip TechnologyIn Stock: 11051N4454-1 Datasheet
1N4454-1
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1N6642
Microchip TechnologyIn Stock: 11401N6642 Datasheet
1N6642
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1N914TR
Fairchild SemiconductorIn Stock: 22511N914TR Datasheet
1N914TR
Parametric Equivalent

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 100 V
Current - Average Rectified (Io) 200 mA
Voltage - Forward (Vf) (Max) @ If 1 V @ 20 mA V
Reverse Recovery Time (trr) 4 ns
Current - Reverse Leakage @ Vr 5 µA @ 75 V µA
Capacitance @ Vr, F 2 pF @ 0V, 1MHz pF
Mounting Type Through Hole -
Package / Case DO-204AH, DO-35, Axial -
Operating Temperature - Junction -55 to 175 °C
Product Status Obsolete -

Substitute Part Grouping Explanation

Substitution of the 1N916ATR is determined by the following critical parameters: maximum DC reverse voltage (Vr), average rectified current (Io), reverse recovery time (trr), and physical package compatibility (DO-35 through-hole). All substitute parts listed maintain the same DO-35 axial package configuration and small-signal switching speed classification (≤200 mA, any speed).

Substitute parts are grouped into two categories:

Parametric Equivalents maintain all critical electrical specifications of the 1N916ATR: 100 V reverse voltage, 200 mA current rating, 4 ns reverse recovery time, and compatible forward voltage characteristics. These parts are direct functional replacements.

Similar Parts share the same package, mounting type, and switching speed classification but differ in one or more electrical parameters. These parts are suitable for applications where the specific parameter difference does not affect circuit performance. Voltage derating and current margin analysis must be performed during design review.

Parameter Comparison

Part Number Manufacturer Vr (Max) [V] Io [mA] Vf (Max) @ If [V] trr [ns] Ir @ Vr [µA] Package Product Status
1N916ATR onsemi 100 200 1 @ 20 mA 4 5 @ 75 V DO-35 Obsolete
1N4148TR Fairchild Semiconductor 100 200 1 @ 10 mA 4 5 @ 75 V DO-35 Active
1N914BTR Fairchild Semiconductor 100 200 1 @ 100 mA 4 5 @ 75 V DO-35 Active
1N914TR Fairchild Semiconductor 100 200 1 @ 10 mA 4 5 @ 75 V DO-35 Active
1N914B Taiwan Semiconductor Corporation 100 150 1 @ 100 mA 4 5 @ 75 V DO-35 Active
1N4149 Microchip Technology 75 200 1 @ 10 mA 4 20 nA @ 20 V DO-35 Active
1N4446 Microchip Technology 75 200 1 @ 20 mA 4 25 nA @ 20 V DO-35 Active
1N4447 Microchip Technology 75 200 1 @ 20 mA 4 25 nA @ 20 V DO-35 Active
1N4454 Microchip Technology 75 200 1 @ 10 mA 4 100 nA @ 50 V DO-35 Active
1N4454-1 Microchip Technology 75 200 1 @ 10 mA 4 100 nA @ 50 V DO-35 Active
1N4150-1 Microchip Technology 50 200 1 @ 200 mA 4 100 nA @ 50 V DO-35 Active

Engineering Selection Recommendations

Parametric Equivalent Selection (Direct Replacement)

The 1N4148TR (Fairchild Semiconductor) and 1N914TR (Fairchild Semiconductor) are parametric equivalents that maintain the full 100 V reverse voltage and 200 mA current specifications of the 1N916ATR. Both parts are active products with RoHS3 compliance and are suitable for direct substitution in applications requiring the complete electrical specification. The 1N4148TR offers the highest inventory availability (240,400 units) among active equivalents.

Active Product Alternatives with Reduced Voltage Rating

The 1N4149, 1N4446, 1N4447, 1N4454, and 1N4454-1 are active products with 75 V reverse voltage ratings. These parts maintain the 200 mA current specification and 4 ns reverse recovery time. Selection of these parts is appropriate for applications where the circuit design operates at voltages below 75 V, providing cost and availability advantages while maintaining functional compatibility.

Reduced Current Rating Alternative

The 1N914B (Taiwan Semiconductor Corporation) maintains the 100 V reverse voltage specification but is rated for 150 mA average rectified current. This part is suitable for applications where the circuit current requirement does not exceed 150 mA. The 1N914B is RoHS3 compliant and offers high inventory availability (20,200 units).

Reduced Voltage and Current Alternative

The 1N4150-1 (Microchip Technology) is rated for 50 V reverse voltage and 200 mA current. This part is appropriate for low-voltage applications and offers the widest operating temperature range (-65°C to 175°C).

Frequently Asked Questions (FAQ)

Q: Can the 1N4148TR be used as a direct replacement for the 1N916ATR?

A: Yes. The 1N4148TR maintains identical electrical specifications: 100 V reverse voltage, 200 mA current rating, 4 ns reverse recovery time, and DO-35 package configuration. Both parts are classified as small-signal switching diodes with equivalent forward voltage characteristics.

Q: What is the difference between the 1N4149 and 1N4446?

A: Both parts are rated for 75 V reverse voltage and 200 mA current in DO-35 packages. The primary difference is reverse leakage current: the 1N4149 specifies 20 nA @ 20 V, while the 1N4446 specifies 25 nA @ 20 V. Both are suitable for applications operating below 75 V.

Q: Can I use the 1N914B in place of the 1N916ATR?

A: The 1N914B is suitable if the application current requirement does not exceed 150 mA. The 1N914B maintains the 100 V reverse voltage rating and DO-35 package. Circuit analysis must confirm that the 150 mA rating provides adequate margin for the intended application.

Q: Are all substitute parts available in DO-35 through-hole packages?

A: Yes. All substitute parts listed are manufactured in DO-35 through-hole axial packages with identical mechanical dimensions and mounting compatibility.

Q: What is the significance of the 4 ns reverse recovery time across all listed parts?

A: The 4 ns reverse recovery time is consistent across all substitute parts and the original 1N916ATR. This parameter defines the switching speed classification and ensures functional compatibility in small-signal switching applications.

Q: Which substitute part offers the best availability?

A: The 1N4148TR (Fairchild Semiconductor) offers the highest inventory availability at 240,400 units in stock and maintains full parametric equivalence to the 1N916ATR.

Q: Can I use a 75 V rated diode in a 100 V application?

A: No. Using a 75 V rated diode (such as 1N4149, 1N4446, 1N4447, 1N4454, or 1N4454-1) in an application requiring 100 V reverse voltage rating violates the maximum voltage specification and creates risk of diode failure. These parts are suitable only for applications operating at 75 V or below.

Q: What is the operating temperature range difference between the 1N916ATR and its substitutes?

A: The 1N916ATR operates from -55°C to 175°C. Most active substitute parts operate from -65°C to 150°C or -65°C to 175°C. Applications requiring operation below -55°C must verify substitute part specifications.

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