1N757ATR Equivalent & Substitute Parts

Part Overview

The 1N757ATR is a Zener diode manufactured by onsemi, rated at 9.1 V nominal with 500 mW power dissipation and ±5% tolerance. This component features a through-hole DO-35 (DO-204AH) axial package and operates across a temperature range of -65°C to 200°C. The part is classified as obsolete, necessitating identification of active equivalent and substitute components that maintain functional compatibility within specified electrical and mechanical parameters.

Key Parameters

Parameter	Value	Unit
Voltage - Zener (Nom)	9.1	V
Tolerance	±5%	%
Power - Max	500	mW
Impedance (Max)	10	Ohms
Current - Reverse Leakage @ Vr	100	nA @ 1 V
Voltage - Forward (Vf) (Max) @ If	1.5	V @ 200 mA
Operating Temperature	-65 to 200	°C
Mounting Type	Through Hole	—
Package / Case	DO-204AH, DO-35, Axial	—

Substitute Part Grouping Explanation

Substitution of the 1N757ATR is determined by the following critical parameters: nominal Zener voltage (9.1 V), voltage tolerance (±5%), power rating (500 mW), impedance (10 Ohms maximum), and through-hole axial package configuration. Substitute parts are grouped into three categories based on these criteria:

Parametric Equivalents (Same Package, Same Power Rating): Parts maintaining identical electrical specifications and DO-35 package form factor, suitable for direct replacement in existing circuit layouts.

Similar Substitutes (Same Voltage, Different Package): Parts with matching 9.1 V Zener voltage and ±5% tolerance but alternative through-hole packages (DO-41) or higher power ratings, applicable when circuit board space or thermal requirements differ.

Functional Alternatives (Same Voltage, Reduced Power): Parts with matching 9.1 V Zener voltage but lower power dissipation ratings, usable in applications with reduced power requirements.

Parameter Comparison

Manufacturer Part Number	Manufacturer	Vz (V)	Tolerance	Power (mW)	Zzt (Ohms)	Package	Product Status
1N757ATR	onsemi	9.1	±5%	500	10	DO-35	Obsolete
1N5239B	Taiwan Semiconductor Corporation	9.1	±5%	500	10	DO-35	Active
1N5239BTR	Fairchild Semiconductor	9.1	±5%	500	10	DO-35	Active
1N5239B TR PBFREE	Central Semiconductor Corp	9.1	±5%	500	10	DO-35	Active
1N757A-1	Microchip Technology	9.1	±5%	500	10	DO-35	Active
1N757	Microchip Technology	9.1	±5%	400	10	DO-35	Active
1N4739A	Lumimax Optoelectronic Technology	9.1	±5%	1000	5	DO-41	Active
1N5924BP-TP	Micro Commercial Co	9.1	±5%	1500	4	DO-41	Active
2EZ9.1D5-TP	Micro Commercial Co	9.1	±5%	2000	2.5	DO-41	Active
1EZ9.1D5-TP	Micro Commercial Co	9.1	±5%	125	5	DO-41	Active
1N960B	Microchip Technology	—	—	—	—	—	Active

Engineering Selection Recommendations

Direct Replacement (Parametric Equivalents):

The following parts provide direct substitution for the 1N757ATR with identical electrical specifications and DO-35 package configuration:

1N5239BTR (Fairchild Semiconductor): Active product status with 41,933 units in stock. Maintains 9.1 V nominal, 500 mW power rating, 10 Ohms impedance, and DO-35 package. Operating temperature range -65°C to 200°C matches the original specification.
1N5239B (Taiwan Semiconductor Corporation): Active product with 1,800 units in stock. Identical electrical parameters and DO-35 package. ROHS3 compliant. Operating temperature maximum of 200°C (TJ) aligns with original specification.
1N5239B TR PBFREE (Central Semiconductor Corp): Active product with 9,440 units in stock. Parametric equivalent with ROHS3 compliance and lead-free construction. Operating temperature range -65°C to 200°C. Cut Tape packaging available.
1N757A-1 (Microchip Technology): Active product with 1,965 units in stock. Identical 9.1 V, 500 mW, DO-35 specifications. Operating temperature -65°C to 175°C. RoHS non-compliant status noted.

Alternative Substitutes (Same Voltage, Different Package):

The following parts maintain 9.1 V nominal voltage and ±5% tolerance but utilize DO-41 package configuration, suitable for applications where package footprint differs:

1N4739A (Lumimax Optoelectronic Technology): Active product with 12,377 units in stock. 9.1 V nominal, 1 W power rating, DO-41 package. Reduced impedance (5 Ohms) and lower reverse leakage (10 µA @ 7 V). Operating temperature -65°C to 200°C.
1N5924BP-TP (Micro Commercial Co): Active product with 1,169 units in stock. 9.1 V nominal, 1.5 W power rating, DO-41 package. ROHS3 compliant. Operating temperature -55°C to 175°C (TJ).
2EZ9.1D5-TP (Micro Commercial Co): Active product with 777 units in stock. 9.1 V nominal, 2 W power rating, DO-41 package. Reduced impedance (2.5 Ohms). Operating temperature -55°C to 150°C (TJ).

Reduced Power Alternative:

1EZ9.1D5-TP (Micro Commercial Co): Active product with 1,027 units in stock. 9.1 V nominal, 125 mW power rating, DO-41 package. Applicable for low-power applications. Operating temperature -55°C to 150°C (TJ).

Base Product Variant:

1N757 (Microchip Technology): Active product with 811 units in stock. 9.1 V nominal, 400 mW power rating (reduced from 500 mW), DO-35 package. Operating temperature -65°C to 175°C (TA). Maintains original package form factor.

Frequently Asked Questions (FAQ)

Q: Can 1N5239BTR directly replace 1N757ATR in existing circuit boards?

A: Yes. The 1N5239BTR maintains identical electrical specifications (9.1 V, 500 mW, ±5% tolerance, 10 Ohms impedance) and DO-35 axial package configuration. No circuit modifications are required.

Q: What is the difference between DO-35 and DO-41 packages?

A: DO-35 and DO-41 are both through-hole axial packages for diodes. DO-35 is a smaller form factor, while DO-41 is larger. Both are mechanically compatible with through-hole circuit boards but occupy different footprint areas. Package selection depends on available board space and thermal requirements.

Q: Can I use a 1 W rated Zener diode (1N4739A) instead of the 500 mW 1N757ATR?

A: Yes, provided the circuit board layout accommodates the DO-41 package. The 1N4739A maintains the same 9.1 V nominal voltage and ±5% tolerance. Higher power rating provides additional thermal margin but does not affect circuit operation at equivalent voltage specifications.

Q: Are there RoHS-compliant alternatives to the 1N757ATR?

A: Yes. The 1N5239B TR PBFREE (Central Semiconductor Corp) and 1N5239BTR (Fairchild Semiconductor) are ROHS3 compliant. The 1N5239B (Taiwan Semiconductor Corporation) is also ROHS3 compliant. All maintain identical electrical specifications and DO-35 package configuration.

Q: What is the significance of the ±5% tolerance specification?

A: The ±5% tolerance indicates the acceptable variation in the nominal 9.1 V Zener voltage across the specified operating temperature range and production lot. All listed substitute parts maintain this tolerance specification, ensuring consistent voltage regulation performance.

Q: Can I use 1N757 (400 mW variant) instead of 1N757ATR (500 mW)?

A: The 1N757 is suitable for applications where power dissipation does not exceed 400 mW. If the circuit requires the full 500 mW capability, the 1N757 may operate outside design margins. Verify circuit power requirements before substitution.

Q: What does "Parametric Equivalent" mean in the context of Zener diode substitution?

A: A parametric equivalent maintains all critical electrical specifications (Zener voltage, tolerance, power rating, impedance) and package configuration as the original part. Parametric equivalents are suitable for direct replacement without circuit modification.

Q: Are there inventory considerations when selecting a substitute?

A: Yes. Stock availability varies by manufacturer and distributor. The 1N5239BTR (Fairchild Semiconductor) has the highest inventory at 41,933 units. The 1N5239B TR PBFREE (Central Semiconductor Corp) has 9,440 units. Verify current inventory status with your component supplier.

Q: What operating temperature range should I consider for substitute selection?

A: The 1N757ATR operates from -65°C to 200°C. Most parametric equivalents (1N5239BTR, 1N5239B, 1N5239B TR PBFREE, 1N757A-1) maintain this range. DO-41 package alternatives have reduced maximum temperatures (-55°C to 175°C or -55°C to 150°C). Select substitutes based on your application's thermal requirements.

Q: What is the difference between "Current - Reverse Leakage @ Vr" specifications across substitute parts?

A: Reverse leakage current indicates the small current flowing through the Zener diode in reverse bias at a specified voltage. Lower reverse leakage (100 nA @ 1 V for 1N757ATR) indicates better diode quality and lower standby power consumption. Substitute parts with higher reverse leakage (3 µA @ 7 V or 10 µA @ 7 V) are functionally equivalent but may exhibit slightly higher standby current in specific circuit configurations.

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