1N754ATR Zener Diode Equivalent & Substitute Parts

Part Overview

The 1N754ATR is a 6.8 V, 500 mW Zener diode manufactured by onsemi in DO-35 axial through-hole packaging. This component is classified as obsolete, though 14,890 pieces remain in stock as new original inventory. The 1N754ATR serves voltage regulation and protection applications requiring precise 6.8 V reference voltage with ±5% tolerance and 500 mW power dissipation capability.

Due to obsolete product status, equivalent and substitute Zener diodes with matching or superior electrical characteristics are necessary for new designs, production continuity, and long-term component availability assurance.

Substiute Parts

1N754ATR
onsemiIn Stock: 149901N754ATR Datasheet
1N754ATR
Current Part
1N5235B
Microchip TechnologyIn Stock: 65361N5235B Datasheet
1N5235B
Direct
1N4736A
Lumimax Optoelectronic TechnologyIn Stock: 204081N4736A Datasheet
1N4736A
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BZX79C6V8
Taiwan Semiconductor CorporationIn Stock: 1177BZX79C6V8 Datasheet
BZX79C6V8
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1N5235BTR
Fairchild SemiconductorIn Stock: 2159871N5235BTR Datasheet
1N5235BTR
Parametric Equivalent
1EZ6.8D5-TP
Micro Commercial CoIn Stock: 9691EZ6.8D5-TP Datasheet
1EZ6.8D5-TP
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1N5063
Microchip TechnologyIn Stock: 6891N5063 Datasheet
1N5063
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1N5921B3P-TP
Micro Commercial CoIn Stock: 10651N5921B3P-TP Datasheet
1N5921B3P-TP
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1N5921BP-TP
Micro Commercial CoIn Stock: 9461N5921BP-TP Datasheet
1N5921BP-TP
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1N754
Microchip TechnologyIn Stock: 10811N754 Datasheet
1N754
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1N754A-1
Microchip TechnologyIn Stock: 10111N754A-1 Datasheet
1N754A-1
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1N754C
Microchip TechnologyIn Stock: 7621N754C Datasheet
1N754C
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1N754C-1
Microchip TechnologyIn Stock: 8591N754C-1 Datasheet
1N754C-1
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1N957B
Microchip TechnologyIn Stock: 13581N957B Datasheet
1N957B
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1N957B-1
Microchip TechnologyIn Stock: 10981N957B-1 Datasheet
1N957B-1
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2EZ6.8D5-TP
Micro Commercial CoIn Stock: 11432EZ6.8D5-TP Datasheet
2EZ6.8D5-TP
Similar
1N5235B TR PBFREE
Central Semiconductor CorpIn Stock: 91441N5235B TR PBFREE Datasheet
1N5235B TR PBFREE
Parametric Equivalent
1N754A TR PBFREE
Central Semiconductor CorpIn Stock: 74571N754A TR PBFREE Datasheet
1N754A TR PBFREE
Parametric Equivalent

Key Parameters

Parameter Value Unit
Voltage - Zener (Nom) 6.8 V
Tolerance ±5% %
Power - Max 500 mW
Impedance (Max) 5 Ohms
Current - Reverse Leakage @ Vr 100 nA @ 1 V nA
Voltage - Forward (Vf) (Max) @ If 1.5 V @ 200 mA V
Operating Temperature -65°C ~ 200°C °C
Mounting Type Through Hole
Package / Case DO-204AH, DO-35, Axial
Moisture Sensitivity Level 1 (Unlimited)

Substitute Part Grouping Explanation

Substitute parts for the 1N754ATR are classified into two categories based on electrical parameter alignment:

Direct Equivalents (Identical Electrical Specifications): Parts matching all critical parameters—6.8 V nominal Zener voltage, ±5% tolerance, 500 mW maximum power, DO-35 packaging, and through-hole mounting. These substitutes maintain functional interchangeability without circuit redesign.

Similar Substitutes (Modified Power Rating or Package): Parts with identical Zener voltage and tolerance but differing power ratings or package form factors. These require circuit evaluation to confirm suitability based on thermal and spatial constraints.

Key Parameters Determining Substitution:

  • Voltage - Zener (Nom): 6.8 V (mandatory match)
  • Tolerance: ±5% (mandatory match)
  • Power - Max: 500 mW (direct equivalents) or higher (similar substitutes)
  • Package / Case: DO-35 (direct equivalents) or alternative axial packages (similar substitutes)
  • Mounting Type: Through Hole (all substitutes)

Parameter Comparison

Part Number Manufacturer Vz (Nom) Tolerance Power (Max) Zzt (Max) Vf (Max) @ If Temp Range Package Status
1N754ATR onsemi 6.8 V ±5% 500 mW 5 Ω 1.5 V @ 200 mA -65°C ~ 200°C DO-35 Obsolete
1N5235B Microchip Technology 6.8 V ±5% 500 mW 5 Ω 1.5 V @ 200 mA -65°C ~ 175°C DO-35 Active
1N5235BTR Fairchild Semiconductor 6.8 V ±5% 500 mW 5 Ω 1.2 V @ 200 mA -65°C ~ 200°C DO-35 Active
BZX79C6V8 Taiwan Semiconductor Corporation 6.8 V ±5% 500 mW 15 Ω 1.5 V @ 100 mA -65°C ~ 175°C DO-35 Active
1N4736A Lumimax Optoelectronic Technology 6.8 V ±5% 1 W 3.5 Ω 1.2 V @ 200 mA -65°C ~ 200°C DO-41 Active
1N754 Microchip Technology 6.8 V ±5% 400 mW 5 Ω 1.1 V @ 200 mA -65°C ~ 175°C DO-35 Active
1N754A-1 Microchip Technology 6.8 V ±5% 500 mW 3 Ω 1.1 V @ 200 mA -65°C ~ 175°C DO-35 Active
1N5921BP-TP Micro Commercial Co 6.8 V ±5% 1.5 W 2.5 Ω 1.5 V @ 200 mA -55°C ~ 175°C DO-41 Active
1EZ6.8D5-TP Micro Commercial Co 6.8 V ±5% 125 mW 3.5 Ω 1.2 V @ 200 mA -55°C ~ 150°C DO-41 Active
1N5063 Microchip Technology 6.8 V ±5% 3 W 2 Ω -65°C ~ 175°C Axial Active

Engineering Selection Recommendations

Direct Equivalent Selection (Preferred for Replacement):

1N5235B and 1N5235BTR are primary direct equivalents to 1N754ATR. Both maintain 6.8 V nominal voltage, ±5% tolerance, 500 mW power rating, and DO-35 packaging. 1N5235BTR (Fairchild Semiconductor) extends operating temperature to 200°C, matching the original 1N754ATR specification. 1N5235B (Microchip Technology) operates to 175°C and is currently in active production with 6,524 pieces in stock.

BZX79C6V8 (Taiwan Semiconductor Corporation) provides identical electrical specifications with DO-35 packaging and active product status. This part exhibits higher impedance (15 Ω maximum) compared to the original 5 Ω specification, requiring circuit validation for applications sensitive to dynamic impedance characteristics.

Alternative Selections (Modified Specifications):

1N754A-1 (Microchip Technology) offers 500 mW power rating in DO-35 packaging with active status and superior impedance performance (3 Ω maximum). Operating temperature range extends to 175°C. This part is suitable for direct replacement in applications not requiring the extended 200°C upper temperature limit.

1N4736A (Lumimax Optoelectronic Technology) provides doubled power dissipation (1 W) in DO-41 packaging with RoHS compliance. This substitute accommodates higher thermal loads and is applicable where package form factor change is acceptable.

1N5921BP-TP (Micro Commercial Co) delivers 1.5 W power rating in DO-41 packaging with RoHS3 compliance and tape & reel packaging. This option suits applications requiring enhanced thermal performance and automated assembly compatibility.

Lower Power Alternative:

1EZ6.8D5-TP (Micro Commercial Co) provides 125 mW power rating in DO-41 packaging. This substitute is applicable only for low-power applications where the original 500 mW specification exceeds circuit requirements.

Higher Power Alternative:

1N5063 (Microchip Technology) delivers 3 W power dissipation in axial packaging. This option accommodates high-thermal-load applications requiring superior power handling beyond the original 500 mW specification.

Frequently Asked Questions (FAQ)

Q: Can 1N5235B directly replace 1N754ATR in existing designs?

A: Yes. 1N5235B maintains identical Zener voltage (6.8 V), tolerance (±5%), power rating (500 mW), and DO-35 packaging. The operating temperature range differs (175°C maximum versus 200°C), which is acceptable for most applications operating below 175°C ambient conditions.

Q: What is the difference between 1N5235B and 1N5235BTR?

A: Both parts share identical electrical specifications (6.8 V, ±5%, 500 mW, DO-35). 1N5235BTR extends maximum operating temperature to 200°C, matching the original 1N754ATR specification. 1N5235BTR is preferred for applications requiring the full 200°C temperature range.

Q: Why does BZX79C6V8 have higher impedance (15 Ω) than the original (5 Ω)?

A: BZX79C6V8 exhibits different internal construction characteristics resulting in higher dynamic impedance. Applications sensitive to voltage regulation stability under varying load conditions require circuit analysis to confirm compatibility. Low-impedance applications may experience increased voltage ripple.

Q: Can I use 1N4736A (1 W) instead of 1N754ATR (500 mW)?

A: Yes, with package form factor consideration. 1N4736A provides doubled power dissipation in DO-41 packaging, suitable for applications requiring enhanced thermal performance. The DO-41 package is physically larger than DO-35, requiring PCB layout verification for mechanical fit.

Q: Is 1N754A-1 suitable for high-temperature applications?

A: 1N754A-1 operates to 175°C maximum, which is 25°C below the original 1N754ATR specification (200°C). This part is suitable for applications with maximum operating temperatures at or below 175°C. For applications requiring 200°C operation, select 1N5235BTR instead.

Q: What is the advantage of 1N5921BP-TP over 1N754ATR?

A: 1N5921BP-TP provides 1.5 W power rating (three times the original 500 mW), RoHS3 compliance, and tape & reel packaging for automated assembly. The DO-41 package is larger than DO-35, requiring PCB layout verification. This substitute is applicable for high-power applications and modern manufacturing processes.

Q: Can I use 1EZ6.8D5-TP (125 mW) as a substitute?

A: 1EZ6.8D5-TP is applicable only for applications where circuit power dissipation requirements are confirmed below 125 mW. Using this part in circuits designed for 500 mW operation will result in component thermal failure. Verify actual circuit power dissipation before selection.

Q: Are all substitute parts RoHS compliant?

A: No. 1N5235B and 1N754A-1 are RoHS non-compliant. 1N4736A and 1N5921BP-TP are RoHS compliant. For applications requiring RoHS compliance, select 1N4736A or 1N5921BP-TP. For non-RoHS applications, all substitutes are acceptable.

Q: What packaging options are available for 6.8 V, 500 mW Zener diodes?

A: Direct equivalents are available in DO-35 packaging (1N5235B, 1N5235BTR, BZX79C6V8). Higher power alternatives are available in DO-41 packaging (1N4736A, 1N5921BP-TP). Verify PCB layout compatibility before selecting alternative package types.

Q: Which substitute has the lowest impedance?

A: 1N5063 exhibits the lowest impedance at 2 Ω maximum, followed by 1N5921BP-TP at 2.5 Ω. However, 1N5063 is rated at 3 W power dissipation and axial packaging, making it suitable only for high-power applications. For 500 mW applications, 1N754A-1 provides the lowest impedance (3 Ω) in DO-35 packaging.

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