1N750A_T50A Zener Diode Equivalent & Substitute Parts

Part Overview

The 1N750A_T50A is a 4.7 V zener diode rated at 500 mW with ±5% tolerance, manufactured by onsemi in a through-hole DO-35 package. This component is classified as obsolete, necessitating identification of active equivalent and substitute parts for ongoing design requirements and procurement needs. Equivalent parts maintain identical electrical specifications and package form factors, while substitute parts offer functional alternatives with variations in specific parameters such as power rating, impedance, or package type.

Key Parameters

Parameter	Value	Unit
Voltage - Zener (Nom)	4.7	V
Tolerance	±5%	-
Power - Max	500	mW
Impedance (Max)	19	Ohms
Current - Reverse Leakage @ Vr	2	µA @ 1 V
Voltage - Forward (Vf) (Max) @ If	1.5	V @ 200 mA
Operating Temperature	-65 to 200	°C
Mounting Type	Through Hole	-
Package / Case	DO-204AH, DO-35, Axial	-

Substitute Part Grouping Explanation

Substitution of the 1N750A_T50A is determined by the following critical parameters: nominal zener voltage (4.7 V), tolerance (±5%), maximum power dissipation (500 mW), and package compatibility (DO-35 through-hole). Parts are grouped into two categories:

Direct Equivalents maintain all electrical specifications and package form factors identical to the original part. These parts are interchangeable without circuit modification.

Similar Substitutes share the nominal zener voltage and tolerance but may differ in one or more of the following: maximum power rating, impedance characteristics, reverse leakage current, forward voltage drop, operating temperature range, or package type. Selection of similar substitutes requires verification that the application tolerates the parameter variations.

The following parameters determine substitution validity:

Nominal Zener Voltage: 4.7 V (required match)
Tolerance: ±5% or tighter (acceptable)
Maximum Power: 500 mW or greater (acceptable)
Package Type: DO-35 preferred; DO-7 and ALF2 represent alternative through-hole packages
Operating Temperature Range: Must encompass application requirements

Parameter Comparison

Part Number	Manufacturer	Vz (Nom)	Tolerance	Power (Max)	Zzt (Max)	Reverse Leakage	Vf (Max) @ If	Temp Range	Package	Status
1N750A_T50A	onsemi	4.7 V	±5%	500 mW	19 Ω	2 µA @ 1 V	1.5 V @ 200 mA	-65 to 200°C	DO-35	Obsolete
1N5230BTR	Fairchild Semiconductor	4.7 V	±5%	500 mW	19 Ω	2 µA @ 1 V	1.2 V @ 200 mA	-65 to 200°C	DO-35	Active
1N4732A	Microchip Technology	4.7 V	±5%	1 W	8 Ω	10 µA @ 1 V	1.2 V @ 200 mA	-	DO-41	Active
1N5230B	Microchip Technology	4.7 V	±5%	500 mW	19 Ω	50 µA @ 2 V	1.5 V @ 200 mA	-65 to 175°C	DO-35	Active
BZX79C4V7	Taiwan Semiconductor Corporation	4.7 V	±5%	500 mW	80 Ω	3 µA @ 2 V	1.5 V @ 100 mA	-65 to 175°C	DO-35	Active
1N750A TR PBFREE	Central Semiconductor Corp	4.7 V	±5%	500 mW	19 Ω	2 µA @ 1 V	1.5 V @ 200 mA	-65 to 200°C	DO-35	Active
1N750	Microchip Technology	4.7 V	±10%	500 mW	19 Ω	2 µA @ 1 V	1.1 V @ 200 mA	-65 to 175°C	DO-7	Active
NZX4V7C,133	Nexperia USA Inc.	4.7 V	±2%	500 mW	100 Ω	3 µA @ 2 V	1.5 V @ 200 mA	-55 to 175°C	ALF2	Active

Engineering Selection Recommendations

Direct Equivalent (Recommended for Direct Replacement):

1N5230BTR (Fairchild Semiconductor) and 1N750A TR PBFREE (Central Semiconductor Corp) are direct equivalents with active product status. Both maintain the 4.7 V nominal voltage, ±5% tolerance, 500 mW power rating, 19 Ω maximum impedance, and DO-35 package. The 1N5230BTR offers superior forward voltage characteristics (1.2 V vs. 1.5 V @ 200 mA), while 1N750A TR PBFREE provides extended operating temperature range (-65 to 200°C) and RoHS3 compliance.

Active Substitutes with Identical Electrical Specifications:

1N5230B (Microchip Technology) maintains all electrical parameters of the original part but operates to 175°C maximum junction temperature and exhibits higher reverse leakage current (50 µA @ 2 V). This part is suitable for applications not requiring the full 200°C upper temperature limit.

Higher Power Rating Substitute:

1N4732A (Microchip Technology) provides 1 W power dissipation with improved impedance characteristics (8 Ω vs. 19 Ω), enabling use in higher-power applications. The DO-41 package requires board layout modification. This part is suitable only when increased power handling is required.

Alternative Package Substitutes:

BZX79C4V7 (Taiwan Semiconductor Corporation) and NZX4V7C,133 (Nexperia USA Inc.) offer DO-35 and ALF2 packages respectively with RoHS3 compliance. BZX79C4V7 exhibits higher impedance (80 Ω) and operates to 175°C. NZX4V7C,133 provides tighter tolerance (±2%) and operates to 175°C with ALF2 package form factor.

1N750 (Microchip Technology) in DO-7 package offers relaxed tolerance (±10%) and reduced operating temperature range (-65 to 175°C), suitable only for applications tolerating these parameter variations.

Frequently Asked Questions (FAQ)

Q: Can 1N5230BTR directly replace 1N750A_T50A without circuit modification?

A: Yes. The 1N5230BTR maintains identical nominal zener voltage (4.7 V), tolerance (±5%), power rating (500 mW), impedance (19 Ω), and DO-35 package. The lower forward voltage (1.2 V vs. 1.5 V @ 200 mA) represents an improvement in forward conduction characteristics.

Q: What is the difference between 1N5230B and 1N5230BTR?

A: Both parts share identical electrical specifications (4.7 V, ±5%, 500 mW, 19 Ω impedance, DO-35 package). The primary difference is operating temperature range: 1N5230B operates to 175°C junction temperature, while 1N5230BTR operates to 200°C. Additionally, 1N5230B exhibits higher reverse leakage current (50 µA @ 2 V vs. 2 µA @ 1 V).

Q: Why does 1N4732A have different impedance and power rating?

A: The 1N4732A is rated for 1 W power dissipation compared to 500 mW for the original part. Higher power rating necessitates different semiconductor design, resulting in lower impedance (8 Ω vs. 19 Ω). This part is suitable only for applications requiring increased power handling capability. The DO-41 package is physically larger than DO-35.

Q: Is NZX4V7C,133 compatible with the original 1N750A_T50A?

A: The NZX4V7C,133 maintains the 4.7 V nominal voltage and 500 mW power rating with tighter tolerance (±2%). However, it uses an ALF2 package instead of DO-35, requiring board layout modification. The operating temperature range is limited to -55 to 175°C. This part is suitable only when tighter tolerance and RoHS3 compliance are required and package change is acceptable.

Q: What is the significance of RoHS3 compliance in substitute selection?

A: RoHS3 compliance indicates the part meets Restriction of Hazardous Substances regulations, restricting lead and other hazardous materials. Parts marked as RoHS3 compliant (1N750A TR PBFREE, BZX79C4V7, NZX4V7C,133) are suitable for applications with environmental or regulatory requirements. The original 1N750A_T50A and 1N5230B are not RoHS compliant.

Q: Can 1N750 (DO-7 package) replace 1N750A_T50A?

A: The 1N750 maintains the 4.7 V nominal voltage and 500 mW power rating but differs in three aspects: tolerance is relaxed to ±10%, operating temperature range is limited to -65 to 175°C, and the package is DO-7 instead of DO-35. This part is suitable only for applications tolerating relaxed tolerance and reduced temperature range, with board layout modification for the different package.

Q: What does impedance (Zzt) represent and why does it vary among substitutes?

A: Impedance (Zzt) represents the dynamic impedance of the zener diode at the nominal zener voltage. Lower impedance indicates better voltage regulation characteristics. The original part specifies 19 Ω maximum impedance. Substitutes with higher impedance (BZX79C4V7 at 80 Ω, NZX4V7C,133 at 100 Ω) exhibit looser voltage regulation. The 1N4732A with 8 Ω impedance provides superior regulation but requires higher power dissipation capability.

Q: How does reverse leakage current affect part selection?

A: Reverse leakage current represents the small current flowing through the zener diode when reverse-biased below the zener voltage. The original part specifies 2 µA @ 1 V. Higher leakage current (1N5230B at 50 µA @ 2 V) may affect circuit performance in sensitive applications. Lower leakage current (BZX79C4V7 and NZX4V7C,133 at 3 µA @ 2 V) represents improved performance.

Q: Is inventory availability a factor in substitute selection?

A: Inventory levels are provided for reference but do not determine electrical compatibility. Selection should prioritize electrical and thermal specifications appropriate to the application. Inventory availability may influence procurement timelines and should be verified with suppliers.

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