1N6008B Zener Diode Equivalent & Substitute Parts

Part Overview

The 1N6008B is a 22 V, 500 mW Zener diode manufactured by onsemi in DO-35 axial through-hole packaging. This component is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement. The 1N6008B operates across a temperature range of -65°C to 200°C with ±5% voltage tolerance and is suitable for voltage regulation and protection applications requiring precise 22 V reference levels.

Substiute Parts

1N6008B
onsemiIn Stock: 8621N6008B Datasheet
1N6008B
Current Part
1N5251B
Microchip TechnologyIn Stock: 21681N5251B Datasheet
1N5251B
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1N4748A
Lumimax Optoelectronic TechnologyIn Stock: 107331N4748A Datasheet
1N4748A
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1N3526A
Microchip TechnologyIn Stock: 11481N3526A Datasheet
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1N5251B TR PBFREE
Central Semiconductor CorpIn Stock: 105721N5251B TR PBFREE Datasheet
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1N5251B-TAP
Vishay General Semiconductor - Diodes DivisionIn Stock: 311361N5251B-TAP Datasheet
1N5251B-TAP
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1N5251B-TR
Vishay General Semiconductor - Diodes DivisionIn Stock: 59721N5251B-TR Datasheet
1N5251B-TR
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1N5251BDO35
Microsemi CorporationIn Stock: 11441N5251BDO35 Datasheet
1N5251BDO35
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1N5251C-TAP
Vishay General Semiconductor - Diodes DivisionIn Stock: 8501N5251C-TAP Datasheet
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1N5541B
Microchip TechnologyIn Stock: 10501N5541B Datasheet
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1N5744B
Microchip TechnologyIn Stock: 7711N5744B Datasheet
1N5744B
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1N5744C
Microchip TechnologyIn Stock: 9571N5744C Datasheet
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1N5744D
Microchip TechnologyIn Stock: 6911N5744D Datasheet
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1N6008A
Microchip TechnologyIn Stock: 9401N6008A Datasheet
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1N6008C
Microchip TechnologyIn Stock: 7541N6008C Datasheet
1N6008C
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1N6008D
Microchip TechnologyIn Stock: 12531N6008D Datasheet
1N6008D
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BZX55B22-TAP
Vishay General Semiconductor - Diodes DivisionIn Stock: 4187BZX55B22-TAP Datasheet
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BZX55B22-TR
Vishay General Semiconductor - Diodes DivisionIn Stock: 30710BZX55B22-TR Datasheet
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BZX55C22-TAP
Vishay General Semiconductor - Diodes DivisionIn Stock: 4248BZX55C22-TAP Datasheet
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BZX55C22-TR
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JAN1N969C-1
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Key Parameters

Parameter Value Unit
Voltage - Zener (Nominal) 22 V
Power - Maximum 500 mW
Tolerance ±5 %
Impedance (Maximum) 55 Ohms
Current - Reverse Leakage @ Vr 100 nA @ 17 V nA
Voltage - Forward (Maximum) @ If 1.2 V @ 200 mA V
Operating Temperature Range -65 to 200 °C
Mounting Type Through Hole
Package / Case DO-204AH, DO-35, Axial

Substitute Part Grouping Explanation

Substitution of the 1N6008B is determined by the following critical parameters:

Primary Matching Criteria:

  • Zener voltage: 22 V nominal
  • Power dissipation: 500 mW maximum
  • Voltage tolerance: ±5%
  • Package type: DO-35 (DO-204AH) axial through-hole
  • Mounting configuration: Through-hole

Secondary Compatibility Factors:

  • Impedance (Zzt): Maximum 55 Ohms for the 1N6008B; substitute parts with lower impedance values (29 Ohms, 35 Ohms) provide improved regulation characteristics
  • Reverse leakage current: 100 nA @ 17 V specification
  • Forward voltage: 1.2 V @ 200 mA reference
  • Operating temperature range: Minimum -65°C to 200°C required

Substitute parts are grouped into two categories:

Direct Electrical Equivalents (500 mW, 22 V, DO-35): Parts meeting all primary criteria with identical power ratings and package specifications.

Higher Power Alternatives (1 W rating): The 1N4748A offers increased power dissipation (1 W) in a larger DO-41 package, suitable for applications requiring thermal margin but requiring mechanical redesign.

Parameter Comparison

Part Number Manufacturer Vz (V) Power (mW) Tolerance (%) Zzt (Ohms) Vf @ 200mA (V) Temp Range (°C) Package Status
1N6008B onsemi 22 500 ±5 55 1.2 -65 to 200 DO-35 Obsolete
1N5251B Microchip Technology 22 500 ±5 29 1.5 -65 to 175 DO-35 Active
1N3526A Microchip Technology 22 500 ±5 35 1.1 -65 to 175 DO-35 Active
1N5251B TR PBFREE Central Semiconductor Corp 22 500 ±5 29 1.1 -65 to 200 DO-35 Active
1N5251B-TAP Vishay General Semiconductor 22 500 ±5 29 1.1 -65 to 175 DO-35 Active
1N5251B-TR Vishay General Semiconductor 22 500 ±5 29 1.1 -65 to 175 DO-35 Active
1N5251BDO35 Microsemi Corporation 22 500 ±5 29 1.5 -65 to 175 DO-35 Active
1N5251C-TAP Vishay General Semiconductor 22 500 ±5 29 1.1 -65 to 175 DO-35 Active
1N5541B Microchip Technology 22 500 ±5 108 1.1 -65 to 175 DO-35 Active
1N5744B Microchip Technology 22 500 ±5 55 0.9 -65 to 175 DO-35 Active
1N4748A Lumimax Optoelectronic Technology 22 1000 ±5 23 1.2 -65 to 200 DO-41 Active

Engineering Selection Recommendations

Primary Substitutes (Direct Replacement - DO-35 Package):

The following parts provide direct electrical and mechanical compatibility with the 1N6008B:

1N5251B-TAP (Vishay General Semiconductor) and 1N5251B-TR (Vishay General Semiconductor) are recommended as primary substitutes. Both parts are AEC-Q101 qualified automotive-grade components with ROHS3 compliance. These parts feature lower impedance (29 Ohms versus 55 Ohms), providing superior voltage regulation characteristics. Operating temperature range extends to 175°C, which is acceptable for most applications previously using the 1N6008B. Both are available in cut-tape packaging with active product status.

1N5251B TR PBFREE (Central Semiconductor Corp) offers identical electrical specifications to the Vishay variants with extended operating temperature range to 200°C, matching the original 1N6008B thermal envelope. This part carries ROHS3 compliance and is available in cut-tape packaging.

1N3526A (Microchip Technology) provides active product status with 500 mW power rating and DO-35 packaging. Impedance of 35 Ohms falls between the original 1N6008B and lower-impedance alternatives, offering a balanced regulation profile. Operating temperature range is -65°C to 175°C.

1N5744B (Microchip Technology) matches the original 1N6008B impedance specification (55 Ohms) and maintains identical electrical characteristics. This part is suitable for applications requiring impedance matching to the original design.

Secondary Substitutes (Thermal Margin Enhancement):

1N4748A (Lumimax Optoelectronic Technology) provides 1 W power dissipation in DO-41 package, offering increased thermal capacity. This part is suitable for applications requiring additional power margin or thermal headroom. Mechanical redesign is required due to package change from DO-35 to DO-41. Operating temperature range extends to 200°C. RoHS compliance is confirmed.

Compliance Considerations:

Parts with ROHS3 compliance (1N5251B-TAP, 1N5251B-TR, 1N5251B TR PBFREE, 1N5251BDO35, 1N5251C-TAP) are preferred for new designs and applications subject to RoHS regulations. Parts with RoHS non-compliant status (1N3526A, 1N5541B, 1N5744B) remain suitable for legacy system support and applications not subject to RoHS requirements.

All substitute parts carry REACH Unaffected status and EAR99 export classification, matching the original 1N6008B regulatory profile.

Frequently Asked Questions (FAQ)

Q: Can the 1N5251B-TAP directly replace the 1N6008B without circuit modification?

A: Yes. The 1N5251B-TAP provides identical zener voltage (22 V), power rating (500 mW), tolerance (±5%), and DO-35 package configuration. Lower impedance (29 Ohms versus 55 Ohms) improves voltage regulation but does not prevent direct substitution. No circuit modification is required.

Q: What is the significance of impedance differences between substitute parts?

A: Impedance (Zzt) affects dynamic regulation characteristics. Lower impedance values (29 Ohms in 1N5251B variants) provide better voltage stability under load transients. Higher impedance values (55 Ohms in 1N5744B, 108 Ohms in 1N5541B) result in greater voltage variation with current changes. Selection depends on circuit regulation requirements.

Q: Why do some substitutes have operating temperature ranges limited to 175°C instead of 200°C?

A: Operating temperature range reflects manufacturer specifications and thermal design margins. Parts rated to 175°C remain suitable for applications operating within that range. For applications requiring full -65°C to 200°C operation, select 1N5251B TR PBFREE or 1N4748A.

Q: Is the 1N4748A (1 W, DO-41) suitable as a substitute?

A: The 1N4748A provides identical zener voltage and tolerance with increased power dissipation (1 W versus 500 mW). The DO-41 package is physically larger than DO-35, requiring mechanical redesign of the circuit board layout and component mounting. This part is suitable for applications requiring thermal margin or higher power dissipation.

Q: What packaging options are available for substitute parts?

A: Most substitutes are available in DO-35 package in multiple packaging formats: bulk (loose components), cut-tape (CT), and tape & box (TB). Packaging selection affects procurement and assembly processes but does not alter electrical performance. The 1N4748A is available only in DO-41 package.

Q: Are automotive-qualified parts (AEC-Q101) required for my application?

A: AEC-Q101 qualification is required for automotive applications and applications subject to automotive supply chain requirements. The 1N5251B-TAP and 1N5251B-TR carry AEC-Q101 qualification. For non-automotive applications, non-qualified parts remain suitable.

Q: What is the difference between 1N5251B, 1N5251B-TAP, and 1N5251B-TR?

A: These part numbers represent the same electrical component in different packaging formats. 1N5251B is the base part number. The suffix indicates packaging: -TAP denotes cut-tape packaging, -TR denotes tape reel. Electrical specifications are identical; packaging selection depends on procurement and assembly requirements.

Q: Can I use 1N5251BDO35 as a substitute?

A: Yes. The 1N5251BDO35 provides identical electrical specifications (22 V, 500 mW, ±5% tolerance, DO-35 package) with active product status and ROHS3 compliance. Forward voltage specification is 1.5 V @ 200 mA, which is within acceptable variation for zener diode applications.

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