1N6002B-TP Zener Diode Equivalent & Substitute Parts

Part Overview

The 1N6002B-TP is a 12 V, 500 mW zener diode manufactured by Micro Commercial Co in a DO-35 through-hole package. This component is classified as obsolete, necessitating identification of active equivalent and substitute parts for ongoing design requirements and procurement needs. The part operates across a temperature range of -65°C to 200°C with ±5% voltage tolerance and is RoHS3 compliant.

Substiute Parts

1N6002B-TP
Micro Commercial CoIn Stock: 10281N6002B-TP Datasheet
1N6002B-TP
Current Part
1N5242BTR
Fairchild SemiconductorIn Stock: 503971N5242BTR Datasheet
1N5242BTR
Direct
1N6002B TR PBFREE
Central Semiconductor CorpIn Stock: 11651N6002B TR PBFREE Datasheet
1N6002B TR PBFREE
Direct
1N759A TR PBFREE
Central Semiconductor CorpIn Stock: 210381N759A TR PBFREE Datasheet
1N759A TR PBFREE
Direct
BZX79C12
Taiwan Semiconductor CorporationIn Stock: 565754BZX79C12 Datasheet
BZX79C12
Direct
BZX79C12-T50A
onsemiIn Stock: 48027BZX79C12-T50A Datasheet
BZX79C12-T50A
Direct
1N4742A
Lumimax Optoelectronic TechnologyIn Stock: 100811N4742A Datasheet
1N4742A
Similar
1N4742ATR
onsemiIn Stock: 424391N4742ATR Datasheet
1N4742ATR
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1N4883
Microchip TechnologyIn Stock: 11211N4883 Datasheet
1N4883
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1N5242B
Microchip TechnologyIn Stock: 56031N5242B Datasheet
1N5242B
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1N5242B BK PBFREE
Central Semiconductor CorpIn Stock: 8831N5242B BK PBFREE Datasheet
1N5242B BK PBFREE
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1N5242B TR PBFREE
Central Semiconductor CorpIn Stock: 32901N5242B TR PBFREE Datasheet
1N5242B TR PBFREE
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1N5242B-TR
Vishay General Semiconductor - Diodes DivisionIn Stock: 20001N5242B-TR Datasheet
1N5242B-TR
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1N5242C-TAP
Vishay General Semiconductor - Diodes DivisionIn Stock: 10061N5242C-TAP Datasheet
1N5242C-TAP
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1N5242C-TR
Vishay General Semiconductor - Diodes DivisionIn Stock: 11491N5242C-TR Datasheet
1N5242C-TR
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1N5349B
Microsemi CorporationIn Stock: 103331N5349B Datasheet
1N5349B
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1N759A BK PBFREE
Central Semiconductor CorpIn Stock: 128191N759A BK PBFREE Datasheet
1N759A BK PBFREE
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BZX55C12-TR
Vishay General Semiconductor - Diodes DivisionIn Stock: 20726BZX55C12-TR Datasheet
BZX55C12-TR
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BZX85C12
Taiwan Semiconductor CorporationIn Stock: 1014BZX85C12 Datasheet
BZX85C12
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TZX12A-TAP
Vishay General Semiconductor - Diodes DivisionIn Stock: 21827TZX12A-TAP Datasheet
TZX12A-TAP
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TZX12A-TR
Vishay General Semiconductor - Diodes DivisionIn Stock: 30864TZX12A-TR Datasheet
TZX12A-TR
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TZX12B-TAP
Vishay General Semiconductor - Diodes DivisionIn Stock: 10252TZX12B-TAP Datasheet
TZX12B-TAP
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TZX12B-TR
Vishay General Semiconductor - Diodes DivisionIn Stock: 15479TZX12B-TR Datasheet
TZX12B-TR
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TZX12C-TAP
Vishay General Semiconductor - Diodes DivisionIn Stock: 30493TZX12C-TAP Datasheet
TZX12C-TAP
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TZX12C-TR
Vishay General Semiconductor - Diodes DivisionIn Stock: 27427TZX12C-TR Datasheet
TZX12C-TR
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TZX12D-TAP
Vishay General Semiconductor - Diodes DivisionIn Stock: 40622TZX12D-TAP Datasheet
TZX12D-TAP
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TZX12D-TR
Vishay General Semiconductor - Diodes DivisionIn Stock: 29779TZX12D-TR Datasheet
TZX12D-TR
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Key Parameters

Parameter Value
Voltage - Zener (Nom) 12 V
Power - Max 500 mW
Tolerance ±5%
Impedance (Max) 22 Ohms
Current - Reverse Leakage @ Vr 100 nA @ 9.1 V
Voltage - Forward (Vf) (Max) @ If 1.5 V @ 100 mA
Operating Temperature -65°C ~ 200°C
Mounting Type Through Hole
Package / Case DO-204AH, DO-35, Axial

Substitute Part Grouping Explanation

Substitute parts for the 1N6002B-TP are classified into two categories based on electrical and mechanical compatibility:

Direct Substitutes (Identical Electrical and Package Specifications): Direct substitutes maintain the same zener voltage (12 V), power rating (500 mW), tolerance (±5%), operating temperature range (-65°C to 200°C), and DO-35 package configuration. These parts are functionally interchangeable with the main part. Impedance values may vary within acceptable ranges (22–30 Ohms). Reverse leakage current specifications may differ but remain within acceptable operational limits. These parts include 1N5242BTR, 1N6002B TR PBFREE, 1N759A TR PBFREE, BZX79C12, and BZX79C12-T50A.

Similar Parts (Higher Power Rating, Different Package): Similar parts maintain the same zener voltage (12 V) and tolerance (±5%) but feature higher power ratings (1 W or 3 W) and different package configurations (DO-41 or Axial). These parts are suitable for applications requiring higher power dissipation but require mechanical and thermal design modifications. These parts include 1N4742A, 1N4742ATR, 1N4883, 1N5242B, and 1N5242B BK PBFREE.

Parameter Comparison

Part Number Manufacturer Vz (Nom) Power (Max) Tolerance Zzt (Max) Vr Leakage @ Vr Vf (Max) @ If Temp Range Package Status
1N6002B-TP Micro Commercial Co 12 V 500 mW ±5% 22 Ω 100 nA @ 9.1 V 1.5 V @ 100 mA -65°C ~ 200°C DO-35 Obsolete
1N5242BTR Fairchild Semiconductor 12 V 500 mW ±5% 30 Ω 1 µA @ 9.1 V 1.2 V @ 200 mA -65°C ~ 200°C DO-35 Active
1N6002B TR PBFREE Central Semiconductor Corp 12 V 500 mW ±5% 22 Ω 100 nA @ 9.1 V 1.5 V @ 100 mA -65°C ~ 200°C DO-35 Active
1N759A TR PBFREE Central Semiconductor Corp 12 V 500 mW ±5% 30 Ω 100 nA @ 1 V 1.5 V @ 200 mA -65°C ~ 200°C DO-35 Active
BZX79C12 Taiwan Semiconductor Corporation 12 V 500 mW ±5% 25 Ω 100 nA @ 8 V 1.5 V @ 100 mA -65°C ~ 175°C DO-35 Active
BZX79C12-T50A onsemi 12 V 500 mW ±5% 25 Ω 100 nA @ 8 V 1.5 V @ 100 mA -65°C ~ 200°C DO-35 Active
1N4742A Lumimax Optoelectronic Technology 12 V 1 W ±5% 9 Ω 5 µA @ 9.1 V 1.2 V @ 200 mA -65°C ~ 200°C DO-41 Active
1N4742ATR onsemi 12 V 1 W ±5% 9 Ω 5 µA @ 9.1 V Not specified -65°C ~ 200°C DO-41 Active
1N4883 Microchip Technology 12 V 3 W ±5% 5 Ω 10 µA @ 9.1 V Not specified -65°C ~ 175°C Axial Active
1N5242B Microchip Technology 12 V 500 mW ±5% 30 Ω 1 µA @ 9.1 V 1.5 V @ 200 mA -65°C ~ 175°C DO-35 Active
1N5242B BK PBFREE Central Semiconductor Corp 12 V 500 mW ±5% 30 Ω 1 µA @ 9.1 V 1.1 V @ 200 mA -65°C ~ 200°C DO-35 Active

Engineering Selection Recommendations

For Direct Replacement (500 mW, DO-35 Package):

The following parts provide direct electrical and mechanical compatibility with the 1N6002B-TP:

1N6002B TR PBFREE (Central Semiconductor Corp) is the closest equivalent, maintaining identical impedance (22 Ω) and reverse leakage specifications (100 nA @ 9.1 V). This part is RoHS3 compliant and active in production with 1,061 units in stock.

BZX79C12-T50A (onsemi) is an active alternative with identical operating temperature range (-65°C to 200°C) and RoHS3 compliance. This part features 47,928 units in stock and is supplied in cut tape packaging.

1N5242BTR (Fairchild Semiconductor) maintains the 12 V, 500 mW specifications with extended forward voltage characteristics. This part is active with 50,300 units in stock.

1N759A TR PBFREE (Central Semiconductor Corp) is RoHS3 compliant and active with 20,969 units in stock, offering the same operating temperature range as the main part.

BZX79C12 (Taiwan Semiconductor Corporation) is an active part with the highest inventory availability (565,710 units). Operating temperature is limited to -65°C to 175°C, which is acceptable for most applications not requiring the full 200°C upper limit.

For Higher Power Applications (1 W or 3 W):

1N4742ATR (onsemi) provides 1 W power rating in DO-41 package with RoHS3 compliance and 42,400 units in stock. This part is suitable for applications requiring higher power dissipation than the 500 mW rating.

1N4883 (Microchip Technology) provides 3 W power rating in axial package for applications requiring maximum power dissipation. Operating temperature is limited to -65°C to 175°C.

Compliance Considerations:

All recommended direct substitutes are RoHS3 compliant. The 1N5242B (Microchip Technology) is noted as RoHS non-compliant and should be avoided for applications requiring RoHS compliance. All parts maintain REACH unaffected status and EAR99 export classification.

Frequently Asked Questions (FAQ)

Q: Can 1N5242BTR be used as a direct replacement for 1N6002B-TP?

A: Yes. Both parts maintain 12 V zener voltage, 500 mW power rating, ±5% tolerance, and DO-35 package configuration. The 1N5242BTR is active in production with higher inventory availability. Impedance differs (30 Ω vs. 22 Ω) and reverse leakage is higher (1 µA vs. 100 nA @ 9.1 V), but both values remain within acceptable operational parameters for standard zener diode applications.

Q: What is the difference between 1N6002B TR PBFREE and 1N6002B-TP?

A: The 1N6002B TR PBFREE is the lead-free variant of the same part, supplied in tape and reel packaging. Electrical specifications are identical, including impedance (22 Ω) and reverse leakage (100 nA @ 9.1 V). Both are RoHS3 compliant. The primary difference is packaging format and supplier (Central Semiconductor Corp vs. Micro Commercial Co).

Q: Why does BZX79C12 have a lower operating temperature maximum (175°C vs. 200°C)?

A: BZX79C12 from Taiwan Semiconductor Corporation specifies a maximum junction temperature of 175°C, while the main part and most alternatives specify 200°C. This difference reflects manufacturer design specifications and does not affect functionality in applications operating below 175°C. For applications requiring operation above 175°C, select BZX79C12-T50A (onsemi) or 1N6002B TR PBFREE, which both support -65°C to 200°C.

Q: Can I use 1N4742A or 1N4742ATR as replacements?

A: These parts are suitable only for applications where higher power dissipation (1 W vs. 500 mW) is required or beneficial. The DO-41 package is physically larger than DO-35, requiring PCB layout modifications. Electrical characteristics differ: impedance is lower (9 Ω vs. 22 Ω) and reverse leakage is higher (5 µA vs. 100 nA @ 9.1 V). Use these parts only when thermal design or circuit requirements specifically call for 1 W power rating.

Q: What does "PBFREE" designation mean?

A: PBFREE indicates lead-free construction, compliant with RoHS directives. Parts designated PBFREE use alternative solder materials and are suitable for applications requiring lead-free compliance. Electrical performance is equivalent to leaded versions.

Q: Are all substitute parts RoHS3 compliant?

A: No. The 1N5242B (Microchip Technology) is noted as RoHS non-compliant. All other recommended direct substitutes are RoHS3 compliant. Verify compliance requirements for your application before selection.

Q: What is the significance of impedance (Zzt) differences between parts?

A: Impedance affects dynamic zener voltage regulation characteristics. Lower impedance (22 Ω) provides better voltage regulation under load changes. Higher impedance (30 Ω) results in slightly greater voltage variation. For most standard applications, impedance differences between 22 Ω and 30 Ω are not critical. Applications requiring precise voltage regulation should prioritize lower impedance values.

Q: Can I substitute a 3 W zener diode (1N4883) for the 500 mW part?

A: Yes, electrically and functionally. The 1N4883 maintains 12 V zener voltage and ±5% tolerance. However, the axial package differs from DO-35, requiring PCB layout changes. The 3 W rating is unnecessary for applications designed for 500 mW and may introduce thermal management complexity. Use 1N4883 only when higher power dissipation is required by circuit design.

Q: What packaging options are available for direct substitutes?

A: Direct substitutes (500 mW, 12 V, DO-35) are available in the following packaging formats: bulk, tape and reel (TR), and cut tape (CT). Tape and reel packaging is standard for automated assembly. Bulk packaging is suitable for manual assembly or low-volume applications. Cut tape is intermediate for semi-automated processes. Select packaging based on assembly method and volume requirements.

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