1N5986B Equivalent & Substitute Parts

Part Overview

The 1N5986B is a Zener diode rated at 2.7 V nominal with 500 mW power dissipation and ±5% tolerance, manufactured by onsemi in DO-35 through-hole package. This part is classified as obsolete, making equivalent substitutes necessary for new designs and ongoing production requirements. The 1N5986B serves voltage regulation and protection applications in electronic circuits where precise 2.7 V reference voltage is required.

Substiute Parts

1N5986B
onsemiIn Stock: 7711N5986B Datasheet
1N5986B
Current Part
1N5223B
Taiwan Semiconductor CorporationIn Stock: 214891N5223B Datasheet
1N5223B
Direct
BZX79C2V7
Taiwan Semiconductor CorporationIn Stock: 30315BZX79C2V7 Datasheet
BZX79C2V7
Parametric Equivalent
1N4371
Microchip TechnologyIn Stock: 10221N4371 Datasheet
1N4371
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1N4371A
Microchip TechnologyIn Stock: 8731N4371A Datasheet
1N4371A
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1N4682 (DO35)
Microsemi CorporationIn Stock: 10861N4682 (DO35) Datasheet
1N4682 (DO35)
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1N5223A (DO-35)TR
Microsemi CorporationIn Stock: 9121N5223A (DO-35)TR Datasheet
1N5223A (DO-35)TR
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1N5223B BK TIN/LEAD
Central Semiconductor CorpIn Stock: 12091N5223B BK TIN/LEAD Datasheet
1N5223B BK TIN/LEAD
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1N5223B TR PBFREE
Central Semiconductor CorpIn Stock: 9291N5223B TR PBFREE Datasheet
1N5223B TR PBFREE
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1N5223B-TR
Vishay General Semiconductor - Diodes DivisionIn Stock: 440021N5223B-TR Datasheet
1N5223B-TR
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1N5223C-TAP
Vishay General Semiconductor - Diodes DivisionIn Stock: 12081N5223C-TAP Datasheet
1N5223C-TAP
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1N5223C-TR
Vishay General Semiconductor - Diodes DivisionIn Stock: 9541N5223C-TR Datasheet
1N5223C-TR
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1N5986
Microchip TechnologyIn Stock: 7331N5986 Datasheet
1N5986
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1N5986A
Microchip TechnologyIn Stock: 11371N5986A Datasheet
1N5986A
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1N5986B
Microchip TechnologyIn Stock: 11251N5986B Datasheet
1N5986B
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1N5986C
Microchip TechnologyIn Stock: 9191N5986C Datasheet
1N5986C
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1N5986D
Microchip TechnologyIn Stock: 8071N5986D Datasheet
1N5986D
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NZX2V7B,133
NXP USA Inc.In Stock: 61019NZX2V7B,133 Datasheet
NZX2V7B,133
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BZX79C2V7
Taiwan Semiconductor CorporationIn Stock: 30315BZX79C2V7 Datasheet
BZX79C2V7
Parametric Equivalent
BZX79C2V7-T50A
Fairchild SemiconductorIn Stock: 51031BZX79C2V7-T50A Datasheet
BZX79C2V7-T50A
Parametric Equivalent

Key Parameters

Parameter Value Unit
Voltage - Zener (Nom) 2.7 V
Tolerance ±5 %
Power - Max 500 mW
Impedance (Max) 100 Ohms
Current - Reverse Leakage @ Vr 75 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If 1.2 V @ 200 mA
Operating Temperature -65 to 200 °C
Mounting Type Through Hole -
Package / Case DO-204AH, DO-35, Axial -

Substitute Part Grouping Explanation

Substitution of the 1N5986B is determined by the following critical parameters: nominal Zener voltage (2.7 V), power rating (500 mW), tolerance (±5%), package type (DO-35 through-hole), and operating temperature range. Substitute parts must match or exceed these specifications to ensure functional equivalence in voltage regulation and protection circuits.

Substitute parts are grouped into three categories:

Direct Equivalents maintain all critical electrical parameters including 2.7 V nominal voltage, 500 mW power rating, ±5% tolerance, and DO-35 package. These parts are fully interchangeable with the 1N5986B.

Parametric Equivalents match the core electrical specifications (2.7 V, 500 mW, DO-35) but may differ in secondary parameters such as impedance or forward voltage characteristics. These parts function identically in standard applications.

Similar Parts share the same voltage rating, power rating, and package but may have different tolerance specifications (±10% instead of ±5%) or other minor parameter variations. These parts are suitable for applications where tolerance requirements are less stringent.

Parameter Comparison

Part Number Manufacturer Vz (Nom) Tolerance Power (Max) Zzt (Max) Vf (Max) @ If Temp Range Status RoHS
1N5986B onsemi 2.7 V ±5% 500 mW 100 Ω 1.2 V @ 200 mA -65 to 200°C Obsolete -
1N5223B Taiwan Semiconductor Corporation 2.7 V ±5% 500 mW 30 Ω 1.1 V @ 200 mA -65 to 100°C Active ROHS3
BZX79C2V7 Taiwan Semiconductor Corporation 2.7 V ±5% 500 mW 100 Ω 1.5 V @ 100 mA -65 to 175°C Active ROHS3
1N4371 Microchip Technology 2.7 V ±10% 500 mW 30 Ω 1.1 V @ 200 mA -65 to 175°C Active Non-compliant
1N4371A Microchip Technology 2.7 V ±5% 500 mW 30 Ω 1.1 V @ 200 mA -65 to 175°C Active Non-compliant
1N4682 (DO35) Microsemi Corporation 2.7 V ±5% 500 mW - 1.1 V @ 200 mA -65 to 175°C Active Non-compliant
1N5223A (DO-35)TR Microsemi Corporation 2.7 V ±10% 500 mW 30 Ω 1.5 V @ 200 mA -65 to 175°C Active ROHS3
1N5223B BK TIN/LEAD Central Semiconductor Corp 2.7 V ±5% 500 mW 30 Ω 1.1 V @ 200 mA -65 to 200°C Active Non-compliant
1N5223B TR PBFREE Central Semiconductor Corp 2.7 V ±5% 500 mW 30 Ω 1.1 V @ 200 mA -65 to 200°C Active ROHS3
1N5223B-TR Vishay General Semiconductor - Diodes Division 2.7 V ±5% 500 mW 30 Ω 1.1 V @ 200 mA - Active ROHS3
1N5223C-TAP Vishay General Semiconductor - Diodes Division 2.7 V ±2% 500 mW 30 Ω 1.1 V @ 200 mA -65 to 175°C Active ROHS3

Engineering Selection Recommendations

For Direct Replacement (Highest Compatibility):

The 1N5223B from Taiwan Semiconductor Corporation and 1N5223B-TR from Vishay General Semiconductor are the primary direct equivalents. Both maintain the 2.7 V nominal voltage, ±5% tolerance, 500 mW power rating, and DO-35 package. The 1N5223B-TR is available in active production status with ROHS3 compliance and high inventory levels (43,970 pcs), making it the preferred choice for new designs and production continuity.

For Automotive and High-Precision Applications:

The 1N5223C-TAP from Vishay General Semiconductor offers superior tolerance (±2%) and carries AEC-Q101 automotive qualification. This part is suitable for applications requiring tighter voltage regulation specifications.

For Extended Temperature Range:

The 1N5223B BK TIN/LEAD and 1N5223B TR PBFREE from Central Semiconductor Corp support the full -65°C to 200°C operating temperature range, matching the original 1N5986B specification. The TR PBFREE variant includes ROHS3 compliance.

For Cost-Optimized Designs:

The 1N4371 from Microchip Technology provides functional equivalence at lower cost but with ±10% tolerance instead of ±5%. This part is suitable for applications where voltage tolerance requirements are less stringent.

Parametric Equivalent Option:

The BZX79C2V7 from Taiwan Semiconductor Corporation matches the impedance specification (100 Ω) of the original 1N5986B while maintaining active production status and ROHS3 compliance. This part is suitable for applications sensitive to impedance characteristics.

Frequently Asked Questions (FAQ)

Q: Can I use 1N5223B as a direct replacement for 1N5986B?

A: Yes. The 1N5223B maintains identical electrical specifications: 2.7 V nominal voltage, ±5% tolerance, 500 mW power rating, and DO-35 package. The primary difference is that 1N5986B is obsolete while 1N5223B is in active production.

Q: What is the difference between 1N5223B and 1N5223C-TAP?

A: The 1N5223C-TAP offers tighter tolerance (±2% versus ±5%) and includes AEC-Q101 automotive qualification. Both share the same voltage rating, power rating, and package. Select 1N5223C-TAP for applications requiring higher precision voltage regulation.

Q: Why do some substitutes have different impedance values?

A: Impedance (Zzt) affects the dynamic response of the Zener diode in transient conditions. The 1N5986B specifies 100 Ω maximum impedance, while most active substitutes specify 30 Ω. Lower impedance provides faster transient response. The BZX79C2V7 matches the original 100 Ω impedance specification.

Q: Is the 1N4371 suitable for my application?

A: The 1N4371 is functionally equivalent for most applications but carries ±10% tolerance instead of ±5%. Use this part only if your circuit design tolerates ±10% voltage variation. For applications requiring ±5% tolerance, select 1N4371A instead.

Q: What is the difference between cut tape and tape & reel packaging?

A: Both are through-hole DO-35 packages suitable for the same applications. Cut tape (CT) is used for manual assembly or small-volume production. Tape & reel (TR) is used for automated assembly equipment. The electrical specifications are identical.

Q: Can I use 1N5223A instead of 1N5223B?

A: The 1N5223A carries ±10% tolerance compared to 1N5223B's ±5% tolerance. Both share the same 2.7 V voltage rating and 500 mW power rating. Use 1N5223A only if your application tolerates ±10% voltage variation.

Q: Does RoHS compliance matter for my design?

A: RoHS3 compliance is required for products sold in the European Union and many other markets. If your design is subject to RoHS regulations, select parts marked as ROHS3 Compliant. The 1N5223B-TR, 1N5223C-TAP, and BZX79C2V7 all meet ROHS3 requirements.

Q: What is the operating temperature range difference between substitutes?

A: The original 1N5986B supports -65°C to 200°C. Most active substitutes support -65°C to 175°C. The 1N5223B BK TIN/LEAD and 1N5223B TR PBFREE from Central Semiconductor maintain the full -65°C to 200°C range. Verify your application's temperature requirements before selection.

Q: Why is BZX79C2V7 listed as a parametric equivalent?

A: The BZX79C2V7 matches the impedance specification (100 Ω) of the original 1N5986B while maintaining all other critical parameters. This part is suitable for applications where impedance characteristics are critical to circuit performance.

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