1N5819-1 Equivalent & Substitute Parts

Part Overview

The 1N5819-1 is a Schottky rectifier diode manufactured by Microchip Technology, rated for 45 V DC reverse voltage and 1 A average rectified current in a through-hole DO-204AL (DO-41) axial package. This component is classified as Active product status and is RoHS non-compliant. Equivalent and substitute parts are necessary when the primary part becomes unavailable, when alternative compliance certifications are required, or when design specifications permit operation within the electrical parameters of alternative manufacturers' offerings.

Substiute Parts

1N5819-1
Microchip TechnologyIn Stock: 11191N5819-1 Datasheet
1N5819-1
Current Part
1N5819
Microchip TechnologyIn Stock: 304361N5819 Datasheet
1N5819
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1N5819-T
Diodes IncorporatedIn Stock: 753341N5819-T Datasheet
1N5819-T
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1N5819-TP
Micro Commercial CoIn Stock: 21841N5819-TP Datasheet
1N5819-TP
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1N5819RL
STMicroelectronicsIn Stock: 58661N5819RL Datasheet
1N5819RL
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MBR150G
onsemiIn Stock: 1565MBR150G Datasheet
MBR150G
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MBR150RLG
onsemiIn Stock: 4472MBR150RLG Datasheet
MBR150RLG
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SB140-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 10492SB140-E3/54 Datasheet
SB140-E3/54
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SB140-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 6356SB140-E3/73 Datasheet
SB140-E3/73
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SB140-T
Diodes IncorporatedIn Stock: 5284SB140-T Datasheet
SB140-T
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SB140E-G
Comchip TechnologyIn Stock: 4772SB140E-G Datasheet
SB140E-G
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Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 45 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) (Max) @ If 340 mV @ 1 A mV
Speed Fast Recovery ≤ 500ns, > 200mA (Io) ns
Current - Reverse Leakage @ Vr 50 µA @ 45 V µA
Mounting Type Through Hole
Package / Case DO-204AL, DO-41, Axial
Operating Temperature - Junction -65°C ~ 125°C °C
Technology Schottky

Substitute Part Grouping Explanation

Substitution of the 1N5819-1 is determined by the following electrical and mechanical criteria:

Primary Substitution Criteria:

  • Voltage - DC Reverse (Vr) rating must equal or exceed 45 V
  • Current - Average Rectified (Io) must equal or exceed 1 A
  • Technology must be Schottky
  • Mounting type must be Through Hole
  • Package must be compatible with DO-204AL (DO-41) or Axial configuration

Secondary Considerations:

  • Forward voltage (Vf) characteristics affect circuit performance but do not prevent substitution
  • Reverse leakage current affects circuit behavior but does not prevent substitution
  • Operating temperature range and compliance certifications determine suitability for specific applications

Substitute parts are grouped into two categories:

Category A - Direct Electrical Equivalents (45 V or higher rating): Parts that meet or exceed the 45 V reverse voltage specification of the 1N5819-1, maintaining full electrical compatibility.

Category B - Functional Substitutes (40 V rating): Parts rated at 40 V reverse voltage. These parts operate within reduced voltage margins and are suitable only for applications where the circuit design permits operation at 40 V maximum reverse voltage.

Parameter Comparison

Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) @ 1A [mV] Ir @ Vr [µA] Package Product Status RoHS Status
1N5819-1 Microchip Technology 45 1 340 50 @ 45V DO-204AL Active Non-compliant
1N5819 Microchip Technology 45 1 490 50 @ 45V DO-41 Active Not specified
1N5819-T Diodes Incorporated 40 1 600 1000 @ 40V DO-41 Active ROHS3 Compliant
1N5819-TP Micro Commercial Co 40 1 600 1000 @ 40V DO-41 Active ROHS3 Compliant
1N5819RL STMicroelectronics 40 1 550 500 @ 40V DO-41 Active ROHS3 Compliant
MBR150G onsemi 50 1 750 500 @ 50V Axial Obsolete ROHS3 Compliant
MBR150RLG onsemi 50 1 750 500 @ 50V Axial Active ROHS3 Compliant
SB140-E3/54 Vishay General Semiconductor - Diodes Division 40 1 480 500 @ 40V DO-204AL Active ROHS3 Compliant
SB140-E3/73 Vishay General Semiconductor - Diodes Division 40 1 480 500 @ 40V DO-204AL Active ROHS3 Compliant
SB140-T Diodes Incorporated 40 1 500 500 @ 40V DO-41 Active ROHS3 Compliant
SB140E-G Comchip Technology 40 1 500 500 @ 40V DO-41 Active ROHS3 Compliant

Engineering Selection Recommendations

For Direct Electrical Equivalence (45 V or Higher Rating):

The 1N5819 (Microchip Technology) maintains the 45 V reverse voltage rating of the 1N5819-1 and is classified as Active product status. This part is the primary equivalent when the 45 V specification is a design requirement. Higher forward voltage (490 mV vs. 340 mV) must be evaluated for circuit impact.

The MBR150RLG (onsemi) provides 50 V reverse voltage rating with Active product status and ROHS3 compliance. This part is suitable for applications requiring enhanced voltage margin. The axial package configuration must be verified for mechanical compatibility with the original DO-204AL footprint.

For Functional Substitution (40 V Rating):

Parts rated at 40 V reverse voltage include 1N5819-T, 1N5819-TP, 1N5819RL, SB140-E3/54, SB140-E3/73, SB140-T, and SB140E-G. All are classified as Active product status. Selection among these parts is based on:

  • Compliance Requirements: 1N5819-T, 1N5819-TP, 1N5819RL, SB140-E3/54, SB140-E3/73, SB140-T, and SB140E-G are ROHS3 compliant, whereas the 1N5819-1 is RoHS non-compliant. Use ROHS3-compliant alternatives when regulatory compliance is required.

  • Package Compatibility: SB140-E3/54 and SB140-E3/73 are supplied in DO-204AL package, matching the original 1N5819-1 footprint. Other 40 V alternatives use DO-41 package, which is mechanically compatible but requires verification of board layout.

  • Forward Voltage Characteristics: SB140-E3/54 and SB140-E3/73 exhibit 480 mV forward voltage, lower than the 1N5819-1 specification of 340 mV. SB140-T and SB140E-G exhibit 500 mV. 1N5819-T and 1N5819-TP exhibit 600 mV. Circuit design must accommodate these variations.

  • Reverse Leakage: 1N5819-T and 1N5819-TP exhibit 1000 µA reverse leakage at 40 V, significantly higher than the 1N5819-1 specification of 50 µA at 45 V. SB140-E3/54, SB140-E3/73, SB140-T, and SB140E-G exhibit 500 µA. 1N5819RL exhibits 500 µA. Applications sensitive to leakage current must account for these differences.

Obsolete Parts:

MBR150G is classified as Obsolete product status and should not be selected for new designs or long-term supply assurance.

Frequently Asked Questions (FAQ)

Q: Can the 1N5819-1 be replaced with a 40 V rated part such as the 1N5819-T or SB140-T?

A: Substitution is possible only if the circuit design permits operation at 40 V maximum reverse voltage. The 1N5819-1 is rated for 45 V; a 40 V part reduces the voltage safety margin by 5 V. Circuit analysis must confirm that reverse voltage stress does not exceed 40 V under any operating condition, including transient events.

Q: What is the difference between the 1N5819 and 1N5819-1?

A: Both parts are manufactured by Microchip Technology and share the same 45 V reverse voltage and 1 A current rating. The primary difference is forward voltage: 1N5819-1 specifies 340 mV maximum at 1 A, while 1N5819 specifies 490 mV maximum at 1 A. The 1N5819-1 exhibits lower forward voltage drop. Packaging designation may also differ (1N5819-1 is explicitly DO-204AL; 1N5819 is designated DO-41).

Q: Are the DO-204AL and DO-41 packages interchangeable?

A: DO-204AL and DO-41 are equivalent designations for the same axial through-hole package. Parts specified with either designation are mechanically and electrically compatible for board-level installation. Verify component lead spacing and hole diameter compatibility with the PCB design.

Q: Why do some substitute parts have higher forward voltage than the 1N5819-1?

A: Forward voltage variation is inherent to Schottky diode manufacturing and design. The 1N5819-1 specifies 340 mV at 1 A, while alternatives such as 1N5819-T specify 600 mV at 1 A. Higher forward voltage increases power dissipation in the diode. Circuit design must account for this additional heat generation and verify that the application can tolerate the increased voltage drop across the diode.

Q: What is the significance of reverse leakage current differences?

A: Reverse leakage current flows through the diode when reverse biased. The 1N5819-1 specifies 50 µA at 45 V. Substitute parts such as 1N5819-T specify 1000 µA at 40 V, a 20-fold increase. In high-impedance circuits or precision analog applications, elevated leakage current may introduce unacceptable error. In power supply applications, leakage current contributes to standby power consumption. Circuit design must evaluate the impact of leakage current on system performance.

Q: Should I select MBR150RLG over 1N5819 for improved voltage margin?

A: MBR150RLG provides 50 V reverse voltage rating compared to 45 V for 1N5819, offering a 5 V additional margin. However, MBR150RLG exhibits 750 mV forward voltage at 1 A, significantly higher than 1N5819 at 490 mV. The selection depends on circuit requirements: if voltage margin is critical, MBR150RLG is suitable; if forward voltage drop and power dissipation are limiting factors, 1N5819 is preferable. Both parts are Active status and ROHS3 compliant.

Q: What compliance certifications should I verify when selecting a substitute?

A: The 1N5819-1 is RoHS non-compliant. If the application requires RoHS compliance, select from ROHS3-compliant alternatives: 1N5819-T, 1N5819-TP, 1N5819RL, MBR150RLG, SB140-E3/54, SB140-E3/73, SB140-T, or SB140E-G. All substitute parts listed are REACH Unaffected and classified under ECCN EAR99. Verify compliance requirements with your procurement and regulatory departments.

Q: Is product status (Active vs. Obsolete) important for part selection?

A: Yes. Active product status indicates ongoing manufacturing and supply availability. Obsolete parts such as MBR150G should not be selected for new designs because future supply cannot be assured. For existing designs using obsolete parts, transition to an Active equivalent to ensure long-term component availability and manufacturing continuity.

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