1N5817 Schottky Diode Equivalent & Substitute Parts

Part Overview

The 1N5817 is a Schottky rectifier diode rated for 20 V DC reverse voltage and 1 A average rectified current in a through-hole DO-204AL (DO-41) axial package. This component is classified as Active product status and is RoHS3 compliant. Equivalent and substitute parts are identified based on matching electrical specifications, package compatibility, and thermal operating ranges. Alternative sources and package variants are necessary to address supply chain requirements, packaging preferences, and application-specific thermal or mounting constraints.

Substiute Parts

1N5817
Taiwan Semiconductor CorporationIn Stock: 392271N5817 Datasheet
1N5817
Current Part
1N5817
Microchip TechnologyIn Stock: 392971N5817 Datasheet
1N5817
Direct
1N5817
Microchip TechnologyIn Stock: 392971N5817 Datasheet
1N5817
Direct
1N5817-T
Diodes IncorporatedIn Stock: 102431N5817-T Datasheet
1N5817-T
Direct
1N5817G
Microchip TechnologyIn Stock: 11401N5817G Datasheet
1N5817G
Upgrade
1N5817RLG
onsemiIn Stock: 54441N5817RLG Datasheet
1N5817RLG
Upgrade
MBRA120ET3G
onsemiIn Stock: 16646MBRA120ET3G Datasheet
MBRA120ET3G
Similar
NRVBA320T3G
onsemiIn Stock: 1380NRVBA320T3G Datasheet
NRVBA320T3G
Similar
SB120-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 11751SB120-E3/54 Datasheet
SB120-E3/54
Similar
SR202-TP
Micro Commercial CoIn Stock: 2489SR202-TP Datasheet
SR202-TP
Similar
1N5817-TP
Micro Commercial CoIn Stock: 358111N5817-TP Datasheet
1N5817-TP
Parametric Equivalent

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 20 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) (Max) @ If 450 mV @ 1 A
Speed Fast Recovery ≤ 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 1 mA @ 20 V
Technology Schottky
Mounting Type Through Hole
Package / Case DO-204AL, DO-41, Axial
Operating Temperature - Junction -55 to 125 °C
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the 1N5817 is determined by the following critical parameters:

Electrical Specifications:

  • Voltage - DC Reverse (Vr) (Max): 20 V
  • Current - Average Rectified (Io): 1 A
  • Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
  • Current - Reverse Leakage @ Vr: 1 mA @ 20 V
  • Speed: Fast Recovery ≤ 500ns, > 200mA (Io)

Package and Mounting:

  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial

Environmental and Compliance:

  • Operating Temperature - Junction: -55°C to 125°C
  • RoHS Status: ROHS3 Compliant
  • Technology: Schottky

Substitute parts are grouped into the following categories:

Direct Equivalents (Through-Hole DO-41 Package): Parts with identical electrical ratings, through-hole mounting, and DO-41 package configuration.

Upgrade Variants (Extended Temperature or Packaging): Parts with identical electrical specifications but extended operating temperature ranges or alternative packaging formats (Bulk, Cut Tape).

Similar Parts (Different Package or Current Rating): Surface-mount alternatives (SMA package) or higher current-rated variants that maintain the 20 V reverse voltage specification but differ in mounting type or current capacity.

Parametric Equivalents (Identical Electrical Specifications): Parts from alternative manufacturers with matching electrical parameters and through-hole configuration.

Parameter Comparison

Manufacturer Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) @ If [mV] Ir @ Vr [mA] Package Mounting Type Tj (°C) RoHS Status Product Status
1N5817 Taiwan Semiconductor Corporation 20 1 450 @ 1 A 1 @ 20 V DO-204AL (DO-41) Through Hole -55 to 125 ROHS3 Compliant Active
1N5817-T Diodes Incorporated 20 1 450 @ 1 A 1 @ 20 V DO-41 Through Hole -65 to 125 ROHS3 Compliant Active
1N5817-TP Micro Commercial Co 20 1 450 @ 1 A 1 @ 20 V DO-41 Through Hole -55 to 125 ROHS3 Compliant Active
1N5817G Microchip Technology 20 1 450 @ 1 A 1 @ 20 V DO-41 Through Hole -65 to 150 ROHS3 Compliant Active
1N5817RLG onsemi 20 1 450 @ 1 A 1 @ 20 V Axial Through Hole -65 to 125 ROHS3 Compliant Active
SB120-E3/54 Vishay General Semiconductor - Diodes Division 20 1 480 @ 1 A 0.5 @ 20 V DO-204AL (DO-41) Through Hole -65 to 125 ROHS3 Compliant Active
SR202-TP Micro Commercial Co 20 2 550 @ 2 A 1 @ 20 V DO-41 Through Hole -50 to 125 ROHS3 Compliant Not For New Designs
MBRA120ET3G onsemi 20 1 530 @ 1 A 0.01 @ 20 V SMA Surface Mount -55 to 150 ROHS3 Compliant Active
NRVBA320T3G onsemi 20 3 500 @ 3 A 2 @ 20 V SMA Surface Mount -65 to 125 ROHS3 Compliant Active

Engineering Selection Recommendations

Direct Replacement (Identical Specifications and Package):

The 1N5817-T (Diodes Incorporated), 1N5817-TP (Micro Commercial Co), and 1N5817RLG (onsemi) are direct functional equivalents with matching 20 V, 1 A ratings and through-hole DO-41 package configuration. All three are Active product status and RoHS3 compliant. The 1N5817-T and 1N5817RLG offer extended lower operating temperature limits (-65°C vs. -55°C), providing additional thermal margin in cold-environment applications. The 1N5817-TP maintains the original -55°C to 125°C range.

Upgrade Option (Extended Temperature Range):

The 1N5817G (Microchip Technology) provides identical electrical specifications with an extended upper operating temperature limit of 150°C (versus 125°C on the original part). This variant is suitable for applications requiring higher thermal headroom. It is Active product status and RoHS3 compliant.

Through-Hole Alternative (Different Manufacturer, Similar Specifications):

The SB120-E3/54 (Vishay General Semiconductor - Diodes Division) maintains the 20 V, 1 A electrical rating and through-hole DO-41 package. Forward voltage is slightly elevated at 480 mV versus 450 mV, and reverse leakage is lower at 0.5 mA versus 1 mA. This part is Active product status and RoHS3 compliant with an extended lower temperature limit of -65°C.

Higher Current Rating (Through-Hole Package):

The SR202-TP (Micro Commercial Co) is rated for 2 A average rectified current at 20 V reverse voltage in a through-hole DO-41 package. This part is suitable for applications requiring higher current capacity. However, it is classified as Not For New Designs and carries a lower operating temperature limit of -50°C. Forward voltage is elevated at 550 mV @ 2 A.

Surface-Mount Alternatives:

The MBRA120ET3G (onsemi) and NRVBA320T3G (onsemi) are surface-mount SMA package variants. The MBRA120ET3G maintains the 1 A rating with extended temperature range (-55°C to 150°C). The NRVBA320T3G is rated for 3 A and includes AEC-Q101 automotive qualification. Both are RoHS3 compliant and Active product status. These options are applicable only to designs using surface-mount assembly.

Frequently Asked Questions (FAQ)

Q: Can I use 1N5817-T as a direct replacement for 1N5817?

A: Yes. The 1N5817-T (Diodes Incorporated) is a direct functional equivalent with identical 20 V, 1 A electrical specifications and through-hole DO-41 package. It is RoHS3 compliant and Active product status. The extended lower operating temperature limit (-65°C) provides additional thermal margin.

Q: What is the difference between 1N5817-TP and 1N5817RLG?

A: Both are direct equivalents with 20 V, 1 A ratings and RoHS3 compliance. The 1N5817-TP (Micro Commercial Co) maintains the original -55°C to 125°C operating range. The 1N5817RLG (onsemi) extends the lower temperature limit to -65°C. Package designation differs: 1N5817-TP specifies DO-41, while 1N5817RLG specifies Axial, though both are through-hole axial components.

Q: Can I use SR202-TP instead of 1N5817?

A: SR202-TP is not recommended for new designs. Although it maintains the 20 V reverse voltage and through-hole DO-41 package, it is rated for 2 A (versus 1 A) and carries a lower operating temperature limit of -50°C. Forward voltage is elevated at 550 mV @ 2 A compared to 450 mV @ 1 A. Use only if current capacity upgrade is required and thermal constraints permit.

Q: What are the surface-mount alternatives to 1N5817?

A: MBRA120ET3G (onsemi) and NRVBA320T3G (onsemi) are surface-mount SMA package options. MBRA120ET3G maintains the 1 A rating with extended temperature range (-55°C to 150°C). NRVBA320T3G is rated for 3 A and includes AEC-Q101 automotive qualification. These are applicable only to designs using surface-mount assembly techniques.

Q: Is 1N5817G suitable for high-temperature applications?

A: Yes. The 1N5817G (Microchip Technology) extends the upper operating temperature limit to 150°C (versus 125°C on the original 1N5817). It maintains identical 20 V, 1 A electrical specifications and through-hole DO-41 package. It is RoHS3 compliant and Active product status.

Q: What is the difference between 1N5817 and SB120-E3/54?

A: Both are 20 V, 1 A through-hole DO-41 Schottky diodes. The SB120-E3/54 (Vishay) has slightly elevated forward voltage at 480 mV versus 450 mV, and lower reverse leakage at 0.5 mA versus 1 mA. It offers an extended lower operating temperature limit of -65°C. Both are RoHS3 compliant and Active product status.

Q: Can NRVBA320T3G replace 1N5817 in my circuit?

A: NRVBA320T3G is not a direct replacement. While it maintains the 20 V reverse voltage specification, it is rated for 3 A (versus 1 A) and uses a surface-mount SMA package (versus through-hole DO-41). It includes AEC-Q101 automotive qualification. Use only if your design requires higher current capacity and surface-mount assembly is feasible.

Q: What does RoHS3 compliance mean for the 1N5817?

A: RoHS3 compliance indicates the component meets Restriction of Hazardous Substances Directive requirements, restricting the use of specified hazardous materials including lead, mercury, cadmium, and certain flame retardants. All recommended direct equivalents and upgrades are RoHS3 compliant.

Q: Are there inventory considerations when selecting a substitute?

A: Yes. Inventory levels vary by part and manufacturer. The 1N5817-TP (Micro Commercial Co) has the highest inventory at 35,772 pieces. The 1N5817G (Microchip Technology) has lower inventory at 1,047 pieces. Verify current stock availability with your supplier before finalizing part selection.

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