1N5624-TAP Equivalent & Substitute Parts

Part Overview

The 1N5624-TAP is an avalanche diode rated for 200 V DC reverse voltage and 3 A average rectified current, manufactured by Vishay General Semiconductor - Diodes Division. This through-hole component is packaged in SOD-64 axial configuration and is classified as Active product status. The 1N5624-TAP is suitable for applications requiring avalanche protection and standard recovery characteristics. Substitute parts are identified when equivalent electrical ratings and mechanical compatibility are required due to inventory constraints, manufacturing discontinuation, or design flexibility within specified parameter tolerances.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	200	V
Current - Average Rectified (Io)	3	A
Voltage - Forward (Vf) (Max) @ If	1	V @ 3 A
Reverse Recovery Time (trr)	7.5	µs
Current - Reverse Leakage @ Vr	1	µA @ 200 V
Capacitance @ Vr, F	60	pF @ 4V, 1MHz
Mounting Type	Through Hole	-
Package / Case	SOD-64, Axial	-
Operating Temperature - Junction	-65 to 175	°C
Technology	Avalanche	-
RoHS Status	ROHS3 Compliant	-

Substitute Part Grouping Explanation

Substitute parts for the 1N5624-TAP are qualified based on the following electrical and mechanical parameters:

Primary Matching Criteria:

Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Mounting Type: Through Hole
Axial package configuration

Secondary Compatibility Parameters:

Speed classification: Standard or Fast Recovery
Reverse Recovery Time (trr): Within acceptable range for application
Current - Reverse Leakage @ Vr: Acceptable within specified voltage
Operating Temperature - Junction: Minimum -55°C to maximum 150°C or higher
RoHS3 Compliance: Required

Substitute parts are grouped into two categories:

Category 1: Direct Electrical Equivalents (Standard Technology) Parts 1N5402-G, 1N5402G, and 1N5402RLG share identical voltage and current ratings with the 1N5624-TAP. These parts utilize standard recovery technology and are packaged in DO-27 or DO-201AD axial configurations, which are mechanically compatible with through-hole mounting requirements.

Category 2: Enhanced Performance Alternatives (Fast Recovery Technology) Part EGP30D provides identical voltage and current ratings with fast recovery characteristics (≤500 ns trr, 50 ns typical). This part offers improved switching performance while maintaining electrical compatibility.

Parameter Comparison

Parameter	1N5624-TAP	1N5402-G	1N5402G	1N5402RLG	EGP30D
Manufacturer	Vishay	Comchip Technology	Taiwan Semiconductor	onsemi	onsemi
Voltage - DC Reverse (Vr) (Max)	200 V	200 V	200 V	200 V	200 V
Current - Average Rectified (Io)	3 A	3 A	3 A	3 A	3 A
Voltage - Forward (Vf) (Max) @ If	1 V @ 3 A	1 V @ 3 A	1 V @ 3 A	1 V @ 3 A	950 mV @ 3 A
Technology	Avalanche	Standard	Standard	Standard	Standard
Speed	Standard Recovery >500ns	Standard Recovery >500ns	Standard Recovery >500ns	Standard Recovery >500ns	Fast Recovery ≤500ns
Reverse Recovery Time (trr)	7.5 µs	-	-	-	50 ns
Current - Reverse Leakage @ Vr	1 µA @ 200 V	5 µA @ 200 V	5 µA @ 200 V	10 µA @ 200 V	5 µA @ 200 V
Capacitance @ Vr, F	60 pF @ 4V, 1MHz	-	25 pF @ 4V, 1MHz	-	95 pF @ 4V, 1MHz
Package / Case	SOD-64, Axial	DO-201AD, Axial	DO-201AD, Axial	DO-201AA/DO-27, Axial	DO-201AD, Axial
Operating Temperature - Junction	-65 to 175°C	-65 to 125°C	-55 to 150°C	-65 to 150°C	-65 to 150°C
Product Status	Active	Active	Active	Not For New Designs	Not For New Designs
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

For Active Product Status Applications:

The 1N5402-G (Comchip Technology) and 1N5402G (Taiwan Semiconductor) are recommended as primary substitutes. Both parts maintain Active product status and provide identical electrical ratings of 200 V reverse voltage and 3 A average rectified current. The 1N5402G offers the widest operating temperature range (-55 to 150°C) and highest inventory availability (2110 pcs). The 1N5402-G provides equivalent performance with 953 pcs in stock. Both parts are ROHS3 compliant and REACH unaffected, meeting current regulatory requirements.

For Legacy or Discontinued Design Support:

The 1N5402RLG (onsemi) is classified as Not For New Designs but remains available with substantial inventory (3659 pcs). This part is suitable for replacement or repair of existing equipment where the 1N5624-TAP is no longer obtainable. Operating temperature range extends to -65 to 150°C, and RoHS3 compliance is maintained.

For Enhanced Switching Performance:

The EGP30D (onsemi) provides fast recovery characteristics (50 ns trr) compared to the 1N5624-TAP standard recovery (7.5 µs). This part is classified as Not For New Designs but offers superior switching performance with 25400 pcs available inventory. Forward voltage is reduced to 950 mV at 3 A, providing lower power dissipation. EGP30D is suitable for applications requiring improved efficiency or higher switching frequencies while maintaining 200 V / 3 A electrical ratings.

Compliance and Certification:

All substitute parts are ROHS3 compliant and REACH unaffected. Moisture Sensitivity Level (MSL) is 1 (Unlimited) for all parts, indicating no special moisture handling requirements. ECCN classification is EAR99 for all parts, and HTSUS code 8541.10.0080 applies uniformly across all options.

Frequently Asked Questions (FAQ)

Q: Can the 1N5402-G directly replace the 1N5624-TAP in existing designs?

A: The 1N5402-G provides electrical equivalence at 200 V reverse voltage and 3 A average rectified current. Both parts are through-hole axial diodes with identical forward voltage ratings (1 V @ 3 A). Package differences exist: 1N5624-TAP uses SOD-64 while 1N5402-G uses DO-201AD. Both packages are standard axial through-hole configurations and are mechanically compatible with typical PCB layouts. Verify physical lead spacing and PCB hole positioning before implementation.

Q: What is the difference between the 1N5402-G and 1N5402G?

A: Both parts share identical electrical specifications: 200 V reverse voltage, 3 A average rectified current, and 1 V forward voltage at 3 A. The primary differences are manufacturer (Comchip Technology versus Taiwan Semiconductor) and packaging format (Tape & Box versus Tape & Reel). The 1N5402G offers higher inventory availability (2110 pcs) and extended operating temperature range (-55 to 150°C versus -65 to 125°C). Both are Active product status and ROHS3 compliant.

Q: Why is the EGP30D classified as Not For New Designs?

A: The EGP30D is marked Not For New Designs by the manufacturer (onsemi), indicating the part is in mature or declining production phase. However, the part remains available with substantial inventory (25400 pcs). This classification does not affect electrical performance or reliability for existing applications. The EGP30D is suitable for replacement, repair, or retrofit applications where fast recovery characteristics (50 ns trr) provide performance advantages over standard recovery alternatives.

Q: What are the key electrical differences between the 1N5624-TAP and substitute parts?

A: All substitute parts maintain the primary electrical ratings of 200 V reverse voltage and 3 A average rectified current. The 1N5624-TAP features avalanche technology with 7.5 µs reverse recovery time and 1 µA reverse leakage at 200 V. Substitute parts utilize standard technology with reverse leakage ranging from 5 µA to 10 µA at 200 V. The EGP30D offers fast recovery (50 ns trr) with reduced forward voltage (950 mV @ 3 A). These differences do not affect basic rectification function but influence switching speed and power dissipation characteristics.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed (1N5402-G, 1N5402G, 1N5402RLG, and EGP30D) are ROHS3 compliant. All parts are also REACH unaffected. Moisture Sensitivity Level (MSL) is 1 (Unlimited) for all parts, indicating no special moisture handling or baking requirements during storage or assembly.

Q: What is the operating temperature range consideration for substitution?

A: The 1N5624-TAP operates from -65°C to 175°C junction temperature. Substitute parts operate within narrower ranges: 1N5402-G (-65 to 125°C), 1N5402G (-55 to 150°C), 1N5402RLG (-65 to 150°C), and EGP30D (-65 to 150°C). For applications requiring operation above 150°C, the 1N5624-TAP is the only option. For standard industrial applications (-40 to 125°C), all substitute parts are suitable.

Q: Can the 1N5402RLG be used in new designs?

A: The 1N5402RLG is classified as Not For New Designs by onsemi. This designation indicates the manufacturer recommends against using this part in new product development. However, the part remains available (3659 pcs inventory) and is suitable for replacement, repair, or retrofit of existing equipment. For new designs, the 1N5402-G or 1N5402G are recommended as they maintain Active product status.

Q: What packaging considerations apply when substituting the 1N5624-TAP?

A: The 1N5624-TAP is packaged in SOD-64 axial configuration. Substitute parts use DO-27 (DO-201AD or DO-201AA) axial packages. All packages are standard through-hole axial diodes with similar physical dimensions and lead spacing. Verify PCB hole positioning and lead bend radius compatibility with existing designs. Axial package orientation (polarity marking) must be observed during installation.

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