1N5621 Equivalent & Substitute Parts Reference

Part Overview

The 1N5621 is a general-purpose rectifier diode manufactured by Semtech Corporation, rated for 800 V DC reverse voltage and 2 A average rectified current in an axial through-hole package. This component is classified as discontinued at DiGi Electronics, necessitating identification of functionally equivalent alternatives for ongoing design requirements and procurement needs.

Key Parameters

Parameter	Value
Voltage - DC Reverse (Vr) (Max)	800 V
Current - Average Rectified (Io)	2 A
Voltage - Forward (Vf) (Max) @ If	1.2 V @ 1 A
Reverse Recovery Time (trr)	300 ns
Current - Reverse Leakage @ Vr	500 nA @ 800 V
Mounting Type	Through Hole
Package / Case	Axial
Operating Temperature - Junction	-65°C ~ 175°C

Substitute Part Grouping Explanation

Substitution eligibility for the 1N5621 is determined by the following critical parameters:

Voltage Rating: The substitute must maintain the 800 V DC reverse voltage specification to ensure equivalent electrical stress capability in the application circuit.

Package and Mounting: The substitute must use axial through-hole packaging to ensure mechanical and electrical compatibility with existing PCB layouts and assembly processes.

Reverse Recovery Characteristics: The substitute speed classification determines switching performance in rectification applications. The 1N5621 operates as a fast recovery diode (≤500 ns, >200 mA).

Current Rating: While the 1N5621 is rated for 2 A average rectified current, substitutes with lower current ratings may be acceptable in applications where the actual operating current does not exceed the substitute's specification.

Reverse Leakage Current: The substitute's reverse leakage specification must be evaluated against application requirements for leakage-sensitive circuits.

Parameter Comparison

Parameter	1N5621 (Semtech)	EM 1BV1 (Sanken Electric)
Voltage - DC Reverse (Vr) (Max)	800 V	800 V
Current - Average Rectified (Io)	2 A	1 A
Voltage - Forward (Vf) (Max) @ If	1.2 V @ 1 A	1.05 V @ 1 A
Speed Classification	Fast Recovery ≤500 ns, >200 mA	Standard Recovery >500 ns, >200 mA
Current - Reverse Leakage @ Vr	500 nA @ 800 V	20 µA @ 800 V
Mounting Type	Through Hole	Through Hole
Package / Case	Axial	Axial
Operating Temperature - Junction	-65°C ~ 175°C	-40°C ~ 150°C
Product Status	Discontinued at DiGi Electronics	Active
RoHS Status	Not specified	RoHS Compliant

Engineering Selection Recommendations

EM 1BV1 Substitution Considerations:

The EM 1BV1 from Sanken Electric USA Inc. shares the critical 800 V voltage rating and axial through-hole package configuration with the 1N5621. Both devices are classified as general-purpose rectifier diodes with equivalent mounting compatibility.

Current Rating Differential: The EM 1BV1 is rated for 1 A average rectified current, compared to the 1N5621's 2 A rating. Substitution is valid only in applications where the actual operating current does not exceed 1 A. Circuit analysis must confirm that peak and average current demands remain within the EM 1BV1 specification.

Recovery Speed Difference: The 1N5621 operates as a fast recovery diode (≤500 ns), while the EM 1BV1 is classified as standard recovery (>500 ns). Applications requiring fast switching performance or operating at high frequencies may experience performance degradation with the EM 1BV1.

Reverse Leakage: The EM 1BV1 exhibits higher reverse leakage current (20 µA @ 800 V) compared to the 1N5621 (500 nA @ 800 V). In leakage-sensitive applications, this 40-fold increase must be evaluated against circuit requirements.

Temperature Range: The EM 1BV1 operating temperature range (-40°C ~ 150°C) is narrower than the 1N5621 (-65°C ~ 175°C). Applications requiring operation below -40°C or above 150°C are not suitable for EM 1BV1 substitution.

Product Status and Compliance: The EM 1BV1 is active in production and RoHS compliant, providing supply continuity and regulatory compliance advantages over the discontinued 1N5621.

Frequently Asked Questions (FAQ)

Q: Can the EM 1BV1 directly replace the 1N5621 in all applications?

A: No. The EM 1BV1 is suitable only in applications where the operating current does not exceed 1 A, the operating temperature range remains within -40°C to 150°C, and standard recovery speed (>500 ns) is acceptable. Applications requiring the 1N5621's 2 A rating, fast recovery characteristics, or extended temperature range require alternative solutions.

Q: What is the significance of the recovery speed difference between fast recovery and standard recovery?

A: Recovery speed determines the diode's switching characteristics. Fast recovery diodes (≤500 ns) are suitable for high-frequency switching applications and circuits requiring rapid reverse bias transition. Standard recovery diodes (>500 ns) are appropriate for lower-frequency rectification. Substituting a standard recovery diode in a fast recovery application may result in increased switching losses and reduced circuit efficiency.

Q: Why is the reverse leakage current of the EM 1BV1 significantly higher than the 1N5621?

A: Reverse leakage current is a characteristic of diode manufacturing and design. The EM 1BV1's higher leakage (20 µA) compared to the 1N5621 (500 nA) reflects different semiconductor processing. In applications sensitive to leakage current, such as precision analog circuits or high-impedance measurement circuits, this difference must be evaluated against circuit specifications.

Q: Are the axial packages of both diodes mechanically identical?

A: Both the 1N5621 and EM 1BV1 use axial through-hole packaging, ensuring mechanical compatibility with existing PCB layouts and assembly processes. No package modification is required for physical substitution.

Q: What compliance advantages does the EM 1BV1 offer?

A: The EM 1BV1 is RoHS compliant and currently in active production. The 1N5621 is discontinued at DiGi Electronics. For new designs or ongoing procurement, the EM 1BV1 provides regulatory compliance and supply chain continuity.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message