1N5621 Equivalent & Substitute Parts

Part Overview

The 1N5621 is a general-purpose rectifier diode manufactured by Microchip Technology, rated for 800 V DC reverse voltage and 1 A average rectified current in an axial through-hole package. This component is classified as discontinued at DiGi Electronics, indicating limited availability from the original manufacturer. The fast recovery characteristic (≤500 ns) and 300 ns reverse recovery time position this diode for applications requiring rapid switching performance in power conversion and protection circuits. Identification of equivalent and substitute parts is necessary due to product discontinuation and to ensure design continuity and supply chain reliability.

Substiute Parts

1N5621
Microchip TechnologyIn Stock: 7411N5621 Datasheet
1N5621
Current Part
1N4006-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 90231N4006-E3/54 Datasheet
1N4006-E3/54
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1N4007-E3/53
Vishay General Semiconductor - Diodes DivisionIn Stock: 292661N4007-E3/53 Datasheet
1N4007-E3/53
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1N4007-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 1377431N4007-E3/54 Datasheet
1N4007-E3/54
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1N4007E-E3/53
Vishay General Semiconductor - Diodes DivisionIn Stock: 232281N4007E-E3/53 Datasheet
1N4007E-E3/53
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BYT54M-TAP
Vishay General Semiconductor - Diodes DivisionIn Stock: 34037BYT54M-TAP Datasheet
BYT54M-TAP
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BYT54M-TR
Vishay General Semiconductor - Diodes DivisionIn Stock: 25257BYT54M-TR Datasheet
BYT54M-TR
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BYV26D-TAP
Vishay General Semiconductor - Diodes DivisionIn Stock: 26846BYV26D-TAP Datasheet
BYV26D-TAP
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BYV26D-TR
Vishay General Semiconductor - Diodes DivisionIn Stock: 15778BYV26D-TR Datasheet
BYV26D-TR
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EGP10K
Fairchild SemiconductorIn Stock: 28398EGP10K Datasheet
EGP10K
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GP10M-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 11652GP10M-E3/54 Datasheet
GP10M-E3/54
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MPG06K-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 8098MPG06K-E3/54 Datasheet
MPG06K-E3/54
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MPG06M-E3/53
Vishay General Semiconductor - Diodes DivisionIn Stock: 11417MPG06M-E3/53 Datasheet
MPG06M-E3/53
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MPG06M-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 12511MPG06M-E3/73 Datasheet
MPG06M-E3/73
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PR1006G-T
Diodes IncorporatedIn Stock: 3170PR1006G-T Datasheet
PR1006G-T
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SF4007-TR
Vishay General Semiconductor - Diodes DivisionIn Stock: 50221SF4007-TR Datasheet
SF4007-TR
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UF4007-E3/53
Vishay General Semiconductor - Diodes DivisionIn Stock: 6274UF4007-E3/53 Datasheet
UF4007-E3/53
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UF4007-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 38205UF4007-E3/54 Datasheet
UF4007-E3/54
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UF4007-M3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 1483UF4007-M3/54 Datasheet
UF4007-M3/54
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UF4007-M3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 5496UF4007-M3/73 Datasheet
UF4007-M3/73
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UF4007GP-AP
Micro Commercial CoIn Stock: 3078UF4007GP-AP Datasheet
UF4007GP-AP
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Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 800 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) (Max) @ If 1.6 V @ 3 A V
Speed Fast Recovery ≤500 ns, >200 mA (Io)
Reverse Recovery Time (trr) 300 ns
Current - Reverse Leakage @ Vr 500 nA @ 800 V nA
Mounting Type Through Hole
Package / Case A, Axial
Operating Temperature - Junction -65 to 175 °C
Technology Standard

Substitute Part Grouping Explanation

Substitution of the 1N5621 is determined by the following critical parameters:

Voltage Rating: The 1N5621 operates at 800 V DC reverse voltage. Substitute parts must meet or exceed this voltage specification to ensure safe operation under maximum reverse bias conditions.

Current Rating: The 1N5621 is rated for 1 A average rectified current. Substitute parts rated at 1 A or higher are acceptable for direct replacement.

Recovery Characteristics: The 1N5621 exhibits fast recovery (≤500 ns) with a reverse recovery time of 300 ns. This parameter is critical for switching applications and determines compatibility with high-frequency circuits.

Mounting and Package: The 1N5621 uses through-hole axial packaging (A, Axial). Substitute parts must maintain through-hole mounting to ensure mechanical and electrical compatibility with existing PCB designs.

Technology Type: The 1N5621 is a standard rectifier diode. Substitute parts may include standard or avalanche technology variants, provided electrical parameters remain compatible.

Substitute parts are grouped into two categories:

  1. Direct Voltage/Current Equivalents (800 V, 1 A): Parts matching the exact voltage and current ratings with compatible package types.

  2. Higher Voltage Ratings (1000 V, 1 A or 1.25 A): Parts exceeding the voltage specification, suitable for applications where higher voltage margin is beneficial.

Parameter Comparison

Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) @ If [V] Speed trr [ns] Package Status
1N5621 Microchip Technology 800 1 1.6 @ 3 A Fast Recovery ≤500 ns 300 A, Axial Discontinued
1N4006-E3/54 Vishay General Semiconductor 800 1 1.1 @ 1 A Standard Recovery >500 ns DO-204AL (DO-41), Axial Active
1N4007-E3/53 Vishay General Semiconductor 1000 1 1.1 @ 1 A Standard Recovery >500 ns DO-204AL (DO-41), Axial Active
1N4007-E3/54 Vishay General Semiconductor 1000 1 1.1 @ 1 A Standard Recovery >500 ns DO-204AL (DO-41), Axial Active
1N4007E-E3/53 Vishay General Semiconductor 1000 1 1.1 @ 1 A Standard Recovery >500 ns 2000 DO-204AL (DO-41), Axial Active
BYT54M-TAP Vishay General Semiconductor 1000 1.25 1.5 @ 1 A Fast Recovery ≤500 ns 100 SOD-57, Axial Active
BYT54M-TR Vishay General Semiconductor 1000 1.25 1.5 @ 1 A Fast Recovery ≤500 ns 100 SOD-57, Axial Active
BYV26D-TAP Vishay General Semiconductor 800 1 2.5 @ 1 A Fast Recovery ≤500 ns 75 SOD-57, Axial Active
BYV26D-TR Vishay General Semiconductor 800 1 2.5 @ 1 A Fast Recovery ≤500 ns 75 SOD-57, Axial Active
EGP10K Fairchild Semiconductor 800 1 1.7 @ 1 A Fast Recovery ≤500 ns 75 DO-204AL (DO-41), Axial Active
GP10M-E3/54 Vishay General Semiconductor 1000 1 1.2 @ 1 A Standard Recovery >500 ns 3000 DO-204AL (DO-41), Axial Active

Engineering Selection Recommendations

For Direct Replacement (Matching 800 V, 1 A Rating with Fast Recovery)

The BYV26D-TAP and BYV26D-TR are the closest functional equivalents to the 1N5621. Both parts maintain the 800 V voltage rating and 1 A current rating with fast recovery characteristics (≤500 ns). The reverse recovery time of 75 ns is superior to the 1N5621's 300 ns, providing improved switching performance. These parts are manufactured by Vishay General Semiconductor and carry ROHS3 compliance. The SOD-57 package is mechanically compatible with through-hole mounting. Both variants are in active production with substantial inventory availability (26,799 and 15,760 units respectively).

The EGP10K from Fairchild Semiconductor also matches the 800 V, 1 A specification with fast recovery (≤500 ns) and a reverse recovery time of 75 ns. This part uses the DO-204AL (DO-41) package, which is mechanically equivalent to the A, Axial package of the 1N5621. The EGP10K is in active production with 28,335 units in stock.

For Higher Voltage Applications (1000 V Rating)

The 1N4007-E3/54 and 1N4007-E3/53 provide a 1000 V voltage rating with 1 A current capacity. These parts are suitable for applications requiring additional voltage margin. Both are manufactured by Vishay General Semiconductor and are ROHS3 compliant. The 1N4007-E3/54 variant has the highest inventory availability (137,700 units). These parts use standard recovery characteristics (>500 ns), which may not be suitable for high-frequency switching applications.

The 1N4006-E3/54 offers an 800 V rating matching the 1N5621 with 1 A current capacity and is ROHS3 compliant. This part uses standard recovery characteristics and is suitable for lower-frequency applications.

The GP10M-E3/54 from Vishay General Semiconductor provides a 1000 V rating with 1 A current and is part of the SUPERECTIFIER® series. This part is ROHS3 compliant and in active production.

For Enhanced Performance (Higher Current or Faster Recovery)

The BYT54M-TAP and BYT54M-TR offer 1000 V voltage rating with increased current capacity (1.25 A) and fast recovery characteristics (≤500 ns). The reverse recovery time of 100 ns provides improved switching performance. Both variants are manufactured by Vishay General Semiconductor, ROHS3 compliant, and in active production with substantial inventory (33,966 and 25,246 units respectively).

Compliance and Availability Considerations

All recommended substitute parts are ROHS3 compliant, addressing environmental and regulatory requirements. The 1N5621 is RoHS non-compliant, making the transition to compliant alternatives necessary for new designs and long-term supply chain sustainability. All substitute parts maintain REACH Unaffected status and EAR99 export classification, consistent with the original part.

Frequently Asked Questions (FAQ)

Q: Can the 1N4006-E3/54 directly replace the 1N5621?

A: The 1N4006-E3/54 matches the 800 V voltage rating and 1 A current rating of the 1N5621. However, it uses standard recovery characteristics (>500 ns) compared to the 1N5621's fast recovery (≤500 ns). This substitution is suitable for applications where switching speed is not critical. The DO-204AL (DO-41) package is mechanically compatible with through-hole mounting.

Q: What is the difference between the BYV26D-TAP and BYV26D-TR variants?

A: Both BYV26D-TAP and BYV26D-TR are identical in electrical specifications (800 V, 1 A, fast recovery, 75 ns reverse recovery time). The difference lies in packaging format: TAP indicates Cut Tape packaging, while TR indicates Tape Reel packaging. Both are suitable for the 1N5621 replacement and are mechanically compatible through-hole components.

Q: Why would I choose a 1000 V rated diode over an 800 V rated substitute?

A: A 1000 V rated diode provides additional voltage margin for applications subject to transient overvoltages or where design safety factors require headroom above the nominal operating voltage. The 1N4007-E3/54 and BYT54M-TAP are suitable for such applications. However, higher voltage ratings may result in increased reverse leakage current and capacitance, which can affect circuit performance in sensitive applications.

Q: Is the 1N5621 package compatible with the SOD-57 package used by BYV26D variants?

A: Both the A, Axial package (1N5621) and SOD-57 package (BYV26D variants) are through-hole axial components with compatible mechanical form factors. Both can be mounted in standard through-hole PCB designs. The SOD-57 package is slightly larger but maintains axial lead configuration suitable for existing PCB layouts.

Q: What is the significance of reverse recovery time in selecting a substitute?

A: Reverse recovery time (trr) determines how quickly a diode transitions from conducting to blocking state. The 1N5621 has a trr of 300 ns. Substitute parts with lower trr values (such as BYV26D at 75 ns or BYT54M at 100 ns) provide faster switching transitions, reducing switching losses and enabling operation at higher frequencies. Standard recovery diodes (1N4006, 1N4007) with trr >500 ns are suitable only for lower-frequency applications.

Q: Are all substitute parts RoHS compliant?

A: Yes, all recommended substitute parts are ROHS3 compliant. The original 1N5621 is RoHS non-compliant. Transition to compliant alternatives ensures compatibility with modern manufacturing standards and regulatory requirements.

Q: Can the BYT54M-TAP replace the 1N5621 in all applications?

A: The BYT54M-TAP exceeds the 1N5621 specifications in voltage (1000 V vs. 800 V), current (1.25 A vs. 1 A), and recovery speed (100 ns vs. 300 ns). This part is suitable for direct replacement in applications where the 1N5621 was used. The higher ratings provide additional design margin. The SOD-57 package is mechanically compatible with through-hole mounting.

Q: What inventory considerations should guide my selection?

A: The 1N4007-E3/54 has the highest inventory availability (137,700 units), followed by BYT54M-TAP (33,966 units) and EGP10K (28,335 units). For applications requiring immediate supply chain security, these parts offer the best availability. The 1N5621 has limited inventory (711 units) due to discontinuation status.

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