1N5617C.TR Equivalent & Substitute Parts

Part Overview

The 1N5617C.TR is a general-purpose rectifier diode manufactured by Semtech Corporation, rated for 400 V DC reverse voltage and 2 A average rectified current in an axial through-hole package. This component is discontinued at DiGi Electronics, necessitating identification of functionally equivalent alternatives for ongoing design and procurement requirements. The part operates across a junction temperature range of -65°C to 175°C and features fast recovery characteristics with a reverse recovery time of 150 ns.

Substiute Parts

1N5617C.TR
Semtech CorporationIn Stock: 11851N5617C.TR Datasheet
1N5617C.TR
Current Part
EM01AV1
Sanken Electric USA Inc.In Stock: 1005EM01AV1 Datasheet
EM01AV1
MFR Recommended

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 400 V
Current - Average Rectified (Io) 2 A
Voltage - Forward (Vf) (Max) @ If 1.2 @ 1 V @ A
Reverse Recovery Time (trr) 150 ns
Current - Reverse Leakage @ Vr 500 nA @ 400 V
Speed Classification Fast Recovery ≤ 500ns, > 200mA (Io)
Mounting Type Through Hole
Package / Case Axial
Operating Temperature - Junction -65 to 175 °C

Substitute Part Grouping Explanation

Substitution of the 1N5617C.TR is determined by the following critical parameters:

Voltage Rating Compatibility: The substitute part must support the maximum reverse voltage requirement of 400 V or higher to ensure safe operation in the original circuit application.

Current Rating Compatibility: The substitute part must support the average rectified current of 2 A or higher to handle the circuit load without exceeding thermal or electrical limits.

Package and Mounting: The substitute must use an axial through-hole package to maintain mechanical and electrical compatibility with existing PCB layouts and assembly processes.

Recovery Characteristics: The substitute must operate within the speed classification range to ensure switching performance is compatible with circuit timing requirements.

The identified substitute, EM01AV1, meets the voltage and package requirements but operates at a reduced current rating of 1 A, which represents a functional limitation for direct substitution in applications requiring the full 2 A capacity.

Parameter Comparison

Parameter 1N5617C.TR (Main Part) EM01AV1 (Substitute) Unit
Manufacturer Semtech Corporation Sanken Electric USA Inc.
Voltage - DC Reverse (Vr) (Max) 400 600 V
Current - Average Rectified (Io) 2 1 A
Voltage - Forward (Vf) (Max) @ If 1.2 @ 1 0.97 @ 1 V @ A
Speed Classification Fast Recovery ≤ 500ns, > 200mA Standard Recovery > 500ns, > 200mA
Current - Reverse Leakage @ Vr 500 nA @ 400 V 10 µA @ 600 V
Mounting Type Through Hole Through Hole
Package / Case Axial Axial
Operating Temperature - Junction -65 to 175 -40 to 150 °C
Product Status Discontinued at DiGi Electronics Active
RoHS Status Not specified RoHS Compliant

Engineering Selection Recommendations

Product Status Consideration: The 1N5617C.TR is discontinued at DiGi Electronics, making EM01AV1 a necessary alternative for new procurement. EM01AV1 maintains active product status with Sanken Electric USA Inc.

Compliance and Certification: EM01AV1 carries RoHS Compliant certification, meeting environmental and regulatory requirements for modern electronics manufacturing. Both parts share the same ECCN (EAR99) and HTSUS (8541.10.0080) classifications.

Voltage and Package Compatibility: EM01AV1 provides 600 V reverse voltage rating, exceeding the 400 V requirement of the original part, and maintains the axial through-hole package format for direct mechanical substitution.

Current Rating Limitation: EM01AV1 is rated for 1 A average rectified current, which is 50% of the 1N5617C.TR rating of 2 A. This substitution is valid only for applications where the circuit load does not exceed 1 A.

Temperature Range Consideration: EM01AV1 operates across -40°C to 150°C, which is narrower than the original part's -65°C to 175°C range. Applications requiring operation below -40°C or above 150°C require alternative solutions.

Recovery Speed Trade-off: EM01AV1 uses standard recovery characteristics (>500 ns) compared to the fast recovery (≤500 ns) of the original part. This affects switching performance in high-frequency applications.

Frequently Asked Questions (FAQ)

Q: Can EM01AV1 directly replace 1N5617C.TR in all applications?

A: No. EM01AV1 is suitable only for applications where the average rectified current does not exceed 1 A and the operating temperature remains within -40°C to 150°C. Applications requiring 2 A capacity or extended temperature range require alternative parts.

Q: Why does EM01AV1 have a higher voltage rating (600 V) than the original part (400 V)?

A: Higher voltage ratings provide additional safety margin and are compatible with lower-voltage applications. A 600 V diode can be used in 400 V circuits without functional degradation, provided other parameters are met.

Q: What is the impact of switching from fast recovery to standard recovery?

A: Standard recovery diodes have longer reverse recovery times (>500 ns vs. ≤500 ns), which may affect switching frequency performance and electromagnetic interference characteristics. Applications operating at high switching frequencies may experience performance changes.

Q: Are there inventory considerations for EM01AV1?

A: EM01AV1 has 969 pieces in new original stock, providing adequate availability for procurement. The part is supplied in Cut Tape (CT) packaging.

Q: How do the forward voltage characteristics compare?

A: EM01AV1 exhibits lower forward voltage (0.97 V @ 1 A) compared to 1N5617C.TR (1.2 V @ 1 A), resulting in reduced power dissipation and improved efficiency in rectification circuits.

Q: What is the significance of the reverse leakage current difference?

A: 1N5617C.TR shows 500 nA leakage at 400 V, while EM01AV1 shows 10 µA at 600 V. The higher leakage in EM01AV1 may affect applications requiring extremely low standby current or high-impedance circuits.

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