1N5402 Equivalent & Substitute Parts

Part Overview

The 1N5402 is a general-purpose rectifier diode manufactured by onsemi, rated for 200 V DC reverse voltage and 3 A average rectified current in a DO-201AD axial through-hole package. The device operates across a junction temperature range of -55°C to 150°C and features standard recovery characteristics with reverse recovery time exceeding 500 ns.

The 1N5402 is classified as obsolete. Equivalent and substitute parts are necessary to support ongoing applications and new designs where this component is specified or functionally required.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	200	V
Current - Average Rectified (Io)	3	A
Voltage - Forward (Vf) (Max) @ If	1.2 V @ 3 A	V
Speed	Standard Recovery >500ns, > 200mA (Io)	—
Current - Reverse Leakage @ Vr	5	µA @ 200 V
Mounting Type	Through Hole	—
Package / Case	DO-201AD, Axial	—
Operating Temperature - Junction	-55 to 150	°C
Technology	Standard	—

Substitute Part Grouping Explanation

Substitution of the 1N5402 is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Requirements:

Voltage - DC Reverse (Vr) (Max): 200 V minimum
Current - Average Rectified (Io): 3 A minimum
Voltage - Forward (Vf) (Max) @ If: Must not exceed application circuit limits
Speed: Standard or faster recovery characteristics acceptable
Current - Reverse Leakage @ Vr: Must not exceed 5 µA @ 200 V for standard applications

Mechanical Compatibility Requirements:

Mounting Type: Through Hole (required for direct replacement)
Package / Case: DO-201AD or equivalent axial package (DO-27, SOD-64 acceptable with mechanical verification)
Operating Temperature - Junction: Must support -55°C minimum and 150°C maximum

Product Status Considerations:

Active status parts are preferred for new designs
Not For New Designs parts are acceptable for legacy system support
Obsolete parts require functional equivalents

Substitute parts are grouped into direct equivalents (matching all critical parameters) and similar alternatives (meeting electrical requirements with package or temperature variations).

Parameter Comparison

Part Number	Manufacturer	Vr (Max) [V]	Io [A]	Vf (Max) @ If [V]	Speed	Ir @ Vr [µA]	Package	Temp Range [°C]	Status
1N5402	onsemi	200	3	1.2 @ 3A	Standard >500ns	5 @ 200V	DO-201AD	-55 to 150	Obsolete
1N5402G	Taiwan Semiconductor Corporation	200	3	1.0 @ 3A	Standard >500ns	5 @ 200V	DO-201AD	-55 to 150	Active
1N5402RLG	onsemi	200	3	1.0 @ 3A	Standard >500ns	10 @ 200V	DO-201AA	-65 to 150	Not For New Designs
EGP30D	onsemi	200	3	0.95 @ 3A	Fast ≤500ns	5 @ 200V	DO-201AD	-65 to 150	Not For New Designs
1N5187	Microchip Technology	200	3	1.5 @ 9A	Fast ≤500ns	2 @ 200V	B, Axial	-65 to 175	Active
1N5402-E3/54	Vishay General Semiconductor - Diodes Division	200	3	1.2 @ 3A	Standard >500ns	5 @ 200V	DO-201AD	-50 to 150	Active
1N5402-G	Comchip Technology	200	3	1.0 @ 3A	Standard >500ns	5 @ 200V	DO-201AD	-65 to 125	Active
1N5402G-T	Diodes Incorporated	200	3	1.1 @ 3A	Standard >500ns	5 @ 200V	DO-201AD	-65 to 150	Active
1N5417	Microchip Technology	200	3	1.5 @ 9A	Fast ≤500ns	1 @ 200V	Axial	-65 to 175	Active
1N5624-TR	Vishay General Semiconductor - Diodes Division	200	3	1.0 @ 3A	Standard >500ns	1 @ 200V	SOD-64	-55 to 175	Active

Engineering Selection Recommendations

Direct Electrical Equivalents (Active Status):

The 1N5402G (Taiwan Semiconductor Corporation) and 1N5402G-T (Diodes Incorporated) are direct functional equivalents with active product status. Both devices match the 200 V / 3 A electrical specification, operate within the required temperature range, and are packaged in DO-201AD. The 1N5402G-E3/54 variant from Vishay General Semiconductor - Diodes Division provides identical electrical performance with RoHS3 compliance and active status, though the lower temperature minimum (-50°C vs. -55°C) should be verified against application requirements.

Active Status Alternatives with Enhanced Performance:

The 1N5402-G (Comchip Technology) and 1N5402G-T (Diodes Incorporated) offer standard recovery characteristics with active product status. The 1N5402-G operates to -65°C minimum but is limited to 125°C maximum junction temperature, requiring verification for applications requiring the full 150°C upper limit.

Fast Recovery Alternatives:

The EGP30D (onsemi) provides fast recovery characteristics (≤500 ns) with identical voltage and current ratings in DO-201AD packaging. Although classified as Not For New Designs, this part is suitable for legacy system support and offers superior switching performance for applications sensitive to recovery time.

Extended Temperature Range Options:

The 1N5187 and 1N5417 (both Microchip Technology) extend the upper junction temperature to 175°C and lower limit to -65°C. These parts employ fast recovery technology and are available with active product status. Package verification is required as these devices use B axial configuration rather than DO-201AD.

Alternative Package Consideration:

The 1N5624-TR (Vishay General Semiconductor - Diodes Division) provides 200 V / 3 A performance in SOD-64 axial packaging with active status and extended temperature range (-55°C to 175°C). This part is suitable where package footprint differences are acceptable.

RoHS3 Compliance:

All recommended active-status substitutes carry RoHS3 compliance certification. The 1N5187 and 1N5417 are RoHS non-compliant and require compliance verification before selection for regulated applications.

Frequently Asked Questions (FAQ)

Q: Can the 1N5402G directly replace the 1N5402 without circuit modification?

A: Yes. The 1N5402G matches the 200 V reverse voltage, 3 A current rating, and DO-201AD package. Forward voltage is slightly lower (1.0 V vs. 1.2 V @ 3 A), which is beneficial for circuit efficiency. Operating temperature range is identical (-55°C to 150°C). No circuit modification is required.

Q: What is the difference between standard and fast recovery diodes in this voltage/current class?

A: Standard recovery diodes (1N5402, 1N5402G) exhibit reverse recovery time exceeding 500 ns. Fast recovery diodes (EGP30D, 1N5187, 1N5417) exhibit reverse recovery time of 50 ns to 200 ns. Fast recovery reduces switching losses in high-frequency applications but is not required for standard 50/60 Hz rectification circuits. Selection depends on application switching frequency.

Q: Are all substitute parts available in the same packaging?

A: Most substitutes are available in DO-201AD or equivalent axial packages. The 1N5187 and 1N5417 use B axial configuration, which is mechanically compatible but requires PCB layout verification. The 1N5624-TR uses SOD-64 packaging and requires mechanical verification before selection.

Q: Which substitute part is recommended for new designs?

A: The 1N5402G (Taiwan Semiconductor Corporation) or 1N5402G-T (Diodes Incorporated) are recommended for new designs. Both carry active product status, match all electrical specifications, and are available in standard packaging. The 1N5402-E3/54 (Vishay) is an alternative with identical performance and RoHS3 compliance.

Q: What is the significance of product status (Active, Not For New Designs, Obsolete)?

A: Active status indicates the manufacturer continues production and supports the part for new designs. Not For New Designs indicates the manufacturer will continue supplying existing inventory but does not recommend the part for new applications. Obsolete indicates the manufacturer has discontinued production. For legacy system support, Not For New Designs parts are acceptable. For new designs, Active status parts are required.

Q: Can I use a fast recovery diode (EGP30D) in place of a standard recovery diode (1N5402)?

A: Yes, electrically. Fast recovery diodes are backward-compatible with standard recovery applications. The EGP30D provides superior switching performance and lower reverse recovery time. However, the EGP30D is classified as Not For New Designs, so it is suitable only for legacy system support or where fast recovery performance is specifically required.

Q: What temperature range should I verify before selecting a substitute?

A: The 1N5402 operates from -55°C to 150°C junction temperature. Most substitutes support this range or extend it. The 1N5402-G (Comchip) is limited to 125°C maximum, which excludes it from applications requiring the full 150°C upper limit. The 1N5187 and 1N5417 extend to 175°C and -65°C, suitable for wider temperature applications.

Q: Are there compliance differences between substitute parts?

A: Yes. All active-status substitutes carry RoHS3 compliance. The 1N5187 and 1N5417 are RoHS non-compliant and require compliance verification for regulated applications. All parts listed are REACH Unaffected and carry EAR99 ECCN classification.

Q: What is the difference between Tape & Reel (TR) and Cut Tape (CT) packaging?

A: Tape & Reel packaging is supplied on continuous tape for automated assembly. Cut Tape is supplied on tape but cut into smaller quantities. Both formats contain identical components. Selection depends on assembly process requirements and order quantity.

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