1N5401-TP Equivalent & Substitute Parts

Part Overview

The 1N5401-TP is a general-purpose rectifier diode manufactured by Micro Commercial Co, rated for 100 V DC reverse voltage and 3 A average rectified current in a DO-201AD axial through-hole package. This part is classified as obsolete, making equivalent and substitute parts necessary for ongoing production and maintenance applications. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating available packaging options.

Substiute Parts

1N5401-TP
Micro Commercial CoIn Stock: 9941N5401-TP Datasheet
1N5401-TP
Current Part
HER302GA-G
Comchip TechnologyIn Stock: 779HER302GA-G Datasheet
HER302GA-G
Direct
HER302GT-G
Comchip TechnologyIn Stock: 789HER302GT-G Datasheet
HER302GT-G
Direct
1N5186
Microchip TechnologyIn Stock: 7961N5186 Datasheet
1N5186
Similar
1N5401-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 620481N5401-E3/54 Datasheet
1N5401-E3/54
Similar
1N5401-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 166271N5401-E3/73 Datasheet
1N5401-E3/73
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1N5401G
Good-Ark SemiconductorIn Stock: 14161N5401G Datasheet
1N5401G
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1N5401G-T
Diodes IncorporatedIn Stock: 650751N5401G-T Datasheet
1N5401G-T
Similar
1N5401RLG
onsemiIn Stock: 37001N5401RLG Datasheet
1N5401RLG
Similar
1N5416
Microchip TechnologyIn Stock: 55061N5416 Datasheet
1N5416
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1N5804
Solid State Inc.In Stock: 52151N5804 Datasheet
1N5804
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1N6074
Microchip TechnologyIn Stock: 11171N6074 Datasheet
1N6074
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EGP30B
Fairchild SemiconductorIn Stock: 3473EGP30B Datasheet
EGP30B
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GI501-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 6343GI501-E3/54 Datasheet
GI501-E3/54
Similar
GP30B-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 3807GP30B-E3/54 Datasheet
GP30B-E3/54
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GP30B-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 930GP30B-E3/73 Datasheet
GP30B-E3/73
Similar
MR851G
onsemiIn Stock: 3369MR851G Datasheet
MR851G
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MR851RLG
onsemiIn Stock: 7576MR851RLG Datasheet
MR851RLG
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P300B-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 1148P300B-E3/54 Datasheet
P300B-E3/54
Similar
RGP25B-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 3759RGP25B-E3/54 Datasheet
RGP25B-E3/54
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RGP30B-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 1072RGP30B-E3/54 Datasheet
RGP30B-E3/54
Similar
RGP30B-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 837RGP30B-E3/73 Datasheet
RGP30B-E3/73
Similar
SBYV28-100-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 3460SBYV28-100-E3/54 Datasheet
SBYV28-100-E3/54
Similar
SBYV28-100-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 2219SBYV28-100-E3/73 Datasheet
SBYV28-100-E3/73
Similar

Key Parameters

Parameter 1N5401-TP Value Unit
Voltage - DC Reverse (Vr) (Max) 100 V
Current - Average Rectified (Io) 3 A
Voltage - Forward (Vf) (Max) @ If 1 @ 3 V @ A
Speed Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 5 µA @ 100 V
Mounting Type Through Hole
Package / Case DO-201AD, Axial
Operating Temperature - Junction -55 to 150 °C
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitute parts for the 1N5401-TP are grouped based on strict electrical and mechanical compatibility criteria. The primary substitution parameters are:

Electrical Compatibility Requirements:

  • Voltage - DC Reverse (Vr) (Max): 100 V minimum
  • Current - Average Rectified (Io): 3 A minimum
  • Voltage - Forward (Vf) (Max): Within acceptable operating range
  • Current - Reverse Leakage @ Vr: 5 µA or lower at 100 V
  • Operating Temperature - Junction: -55°C to 150°C minimum range

Mechanical Compatibility Requirements:

  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, DO-27, or equivalent axial configurations

Compliance Requirements:

  • RoHS Status: ROHS3 Compliant preferred
  • REACH Status: REACH Unaffected

Substitute parts are classified into two categories: Direct Substitutes (identical electrical and mechanical specifications) and Similar Substitutes (equivalent electrical performance with alternative packaging or minor specification variations).

Parameter Comparison

Part Number Manufacturer Vr (Max) V Io (A) Vf (Max) V @ If Speed Ir @ Vr (µA) Package Temp Range °C Product Status RoHS
1N5401-TP Micro Commercial Co 100 3 1 @ 3 Standard >500ns 5 @ 100V DO-201AD -55 to 150 Obsolete ROHS3
HER302GA-G Comchip Technology 100 3 1 @ 3 Fast ≤500ns 5 @ 100V DO-27 -55 to 150 Active ROHS3
HER302GT-G Comchip Technology 100 3 1 @ 3 Fast ≤500ns 5 @ 100V DO-27 -55 to 150 Active ROHS3
1N5186 Microchip Technology 100 3 1.5 @ 9 Fast ≤500ns 2 @ 100V B, Axial -65 to 175 Active Non-compliant
1N5401-E3/54 Vishay General Semiconductor 100 3 1.2 @ 3 Standard >500ns 5 @ 100V DO-201AD -50 to 150 Active ROHS3
1N5401-E3/73 Vishay General Semiconductor 100 3 1.2 @ 3 Standard >500ns 5 @ 100V DO-201AD -50 to 150 Active ROHS3
1N5401G Good-Ark Semiconductor 100 3 1.1 @ 3 Standard >500ns 5 @ 100V DO-201AD -55 to 150 Active ROHS3
1N5401G-T Diodes Incorporated 100 3 1.1 @ 3 Standard >500ns 5 @ 100V DO-201AD -65 to 150 Active ROHS3
1N5401RLG onsemi 100 3 1 @ 3 Standard >500ns 10 @ 100V DO-27, Axial -65 to 150 Not For New Designs ROHS3
1N5416 Microchip Technology 100 3 1.5 @ 9 Fast ≤500ns 1 @ 100V B, Axial -65 to 175 Active Non-compliant
1N5804 Solid State Inc. 100 2.5 0.875 @ 1 Fast ≤500ns 1 @ 100V DO-204AP -65 to 175 Active ROHS3

Engineering Selection Recommendations

Primary Substitutes (Preferred for Direct Replacement):

The 1N5401-E3/54 and 1N5401-E3/73 from Vishay General Semiconductor are the preferred substitutes. Both parts maintain identical electrical specifications to the 1N5401-TP (100 V, 3 A, DO-201AD package) with active product status and ROHS3 compliance. These parts are available in high inventory quantities (62,000 and 16,569 units respectively) and are suitable for direct pin-for-pin replacement in existing designs.

The 1N5401G from Good-Ark Semiconductor and 1N5401G-T from Diodes Incorporated are functionally equivalent alternatives in the same DO-201AD package with active product status and ROHS3 compliance. Both offer extended temperature ranges (-55°C to 150°C and -65°C to 150°C respectively) and high inventory availability.

Secondary Substitutes (Package Alternatives):

The HER302GA-G and HER302GT-G from Comchip Technology provide electrical equivalence with a DO-27 package variant. These parts maintain 100 V, 3 A specifications with fast recovery characteristics and active product status. The DO-27 package is mechanically compatible with DO-201AD applications in through-hole mounting configurations.

Limited Substitutes (Current Derating Required):

The 1N5804 from Solid State Inc. operates at 2.5 A average rectified current, representing a 16.7% reduction from the 1N5401-TP specification. This part is suitable only for applications where the actual operating current does not exceed 2.5 A.

Not Recommended for New Designs:

The 1N5401RLG from onsemi carries a "Not For New Designs" status and exhibits higher reverse leakage current (10 µA versus 5 µA), making it unsuitable for new product development.

The 1N5186 and 1N5416 from Microchip Technology are RoHS non-compliant and do not meet current regulatory requirements for new applications.

Frequently Asked Questions (FAQ)

Q: Can I use HER302GA-G or HER302GT-G as a direct replacement for 1N5401-TP?

A: The HER302GA-G and HER302GT-G are electrically equivalent (100 V, 3 A) but use a DO-27 package instead of DO-201AD. Both packages are axial through-hole configurations with compatible pin spacing for most PCB layouts. Verify physical clearance and lead length requirements for your specific application before substitution.

Q: What is the difference between 1N5401-E3/54 and 1N5401-E3/73?

A: Both parts are manufactured by Vishay General Semiconductor with identical electrical specifications (100 V, 3 A, DO-201AD). The designations E3/54 and E3/73 indicate different tape and reel configurations for automated assembly. Electrical performance and compatibility are equivalent; selection depends on packaging and handling requirements.

Q: Why is 1N5401RLG listed as "Not For New Designs"?

A: The 1N5401RLG carries a "Not For New Designs" product status from onsemi. Additionally, this part exhibits reverse leakage current of 10 µA at 100 V, compared to 5 µA for the 1N5401-TP. New product designs should utilize active-status alternatives such as 1N5401-E3/54, 1N5401G, or 1N5401G-T.

Q: Can I use 1N5804 in place of 1N5401-TP?

A: The 1N5804 is rated for 2.5 A average rectified current, which is 0.5 A lower than the 1N5401-TP specification. Substitution is permissible only if your application's actual operating current does not exceed 2.5 A. Verify circuit requirements before implementation.

Q: Are there RoHS compliance differences between substitute options?

A: The 1N5401-TP, HER302GA-G, HER302GT-G, 1N5401-E3/54, 1N5401-E3/73, 1N5401G, 1N5401G-T, 1N5401RLG, and 1N5804 are all ROHS3 compliant. The 1N5186 and 1N5416 from Microchip Technology are RoHS non-compliant and should not be used in applications requiring RoHS certification.

Q: What is the difference between standard recovery and fast recovery diodes?

A: The 1N5401-TP exhibits standard recovery characteristics (>500 ns). Substitute parts HER302GA-G, HER302GT-G, 1N5186, 1N5416, and 1N5804 feature fast recovery (≤500 ns). Fast recovery diodes reduce switching losses and are suitable for higher-frequency applications. Standard recovery diodes are appropriate for line-frequency and low-frequency rectification circuits.

Q: Can I substitute a part with a different operating temperature range?

A: The 1N5401-TP operates from -55°C to 150°C. Substitute parts with extended ranges (such as 1N5401G-T at -65°C to 150°C or 1N5186 at -65°C to 175°C) are compatible for applications within the original temperature specification. Parts with narrower ranges (such as 1N5401-E3/54 at -50°C to 150°C) are acceptable if your application does not require operation below -50°C.

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