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1N5401GP-AP Equivalent & Substitute Parts
Part Overview
The 1N5401GP-AP is a general-purpose rectifier diode manufactured by Micro Commercial Co, rated for 100 V DC reverse voltage and 3 A average rectified current in a DO-201AD axial through-hole package. This component is classified as Active product status and is ROHS3 compliant. Substitute parts are identified when equivalent electrical performance and mechanical compatibility are required for design flexibility, inventory management, or supply chain continuity while maintaining the same functional specifications and package form factor.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 100 | V |
| Current - Average Rectified (Io) | 3 | A |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 3 A | V |
| Speed | Standard Recovery >500ns, > 200mA (Io) | — |
| Current - Reverse Leakage @ Vr | 5 | µA @ 100 V |
| Package / Case | DO-201AD, Axial | — |
| Mounting Type | Through Hole | — |
| Operating Temperature - Junction | -55 to 150 | °C |
| RoHS Status | ROHS3 Compliant | — |
Substitute Part Grouping Explanation
Substitute parts for the 1N5401GP-AP are qualified based on the following electrical and mechanical parameters:
Primary Substitution Criteria:
- Voltage - DC Reverse (Vr) (Max): 100 V minimum
- Current - Average Rectified (Io): 3 A minimum
- Package / Case: DO-201AD, Axial (mechanical compatibility)
- Mounting Type: Through Hole (board-level compatibility)
- Technology: Standard recovery rectifier diode
- RoHS Status: ROHS3 Compliant (regulatory alignment)
Secondary Compatibility Parameters:
- Voltage - Forward (Vf) (Max): Within acceptable operating range
- Current - Reverse Leakage @ Vr: Consistent with standard specifications
- Operating Temperature - Junction: Minimum -50°C to 150°C range
- Capacitance @ Vr, F: Standard range for DO-201AD package
The substitute parts 1N5401-E3/73 and GI501-E3/54 meet all primary and secondary criteria, enabling direct functional replacement in circuit applications.
Parameter Comparison
| Parameter | 1N5401GP-AP (Main) | 1N5401-E3/73 (Substitute) | GI501-E3/54 (Substitute) |
|---|---|---|---|
| Manufacturer | Micro Commercial Co | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division |
| Voltage - DC Reverse (Vr) (Max) | 100 V | 100 V | 100 V |
| Current - Average Rectified (Io) | 3 A | 3 A | 3 A |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 3 A | 1.2 V @ 3 A | 1.1 V @ 9.4 A |
| Speed | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) |
| Current - Reverse Leakage @ Vr | 5 µA @ 100 V | 5 µA @ 100 V | 5 µA @ 100 V |
| Capacitance @ Vr, F | 40 pF @ 4V, 1MHz | 30 pF @ 4V, 1MHz | 28 pF @ 4V, 1MHz |
| Package / Case | DO-201AD, Axial | DO-201AD, Axial | DO-201AD, Axial |
| Mounting Type | Through Hole | Through Hole | Through Hole |
| Operating Temperature - Junction | -55 to 150°C | -50 to 150°C | -50 to 150°C |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
| Product Status | Active | Active | Active |
Engineering Selection Recommendations
All three diodes—1N5401GP-AP, 1N5401-E3/73, and GI501-E3/54—are Active product status components with ROHS3 compliance and REACH unaffected status, meeting current regulatory requirements for electronic component procurement.
1N5401-E3/73 provides direct functional equivalence with identical voltage and current ratings. Forward voltage is 0.1 V higher at rated current (1.2 V vs. 1.1 V @ 3 A), resulting in marginally increased power dissipation in high-current applications. Operating temperature range is -50 to 150°C, which is acceptable for most industrial and commercial applications. Capacitance is lower (30 pF vs. 40 pF), which may provide improved high-frequency performance in switching applications.
GI501-E3/54 meets all primary electrical specifications with identical reverse voltage and current ratings. Forward voltage specification is provided at 9.4 A, indicating higher current capability. Reverse recovery time is specified at 2 µs, providing additional performance data. Capacitance is lowest among the three parts (28 pF), supporting faster switching transitions. Operating temperature range is -50 to 150°C.
Selection between substitute parts depends on circuit-specific requirements: thermal dissipation tolerance, high-frequency performance needs, and minimum operating temperature requirements.
Frequently Asked Questions (FAQ)
Q: Can 1N5401-E3/73 directly replace 1N5401GP-AP in existing designs?
A: Yes. Both parts share identical voltage (100 V), current (3 A), and package specifications (DO-201AD, Through Hole). Forward voltage difference (0.1 V at 3 A) is within acceptable tolerance for general-purpose rectifier applications. Verify thermal design margins if operating at maximum current continuously.
Q: What is the difference between 1N5401-E3/73 and GI501-E3/54?
A: Both are functionally equivalent at the 100 V, 3 A rating. GI501-E3/54 has lower capacitance (28 pF vs. 30 pF) and specified reverse recovery time (2 µs), making it suitable for higher-frequency switching applications. Forward voltage for GI501-E3/54 is specified at higher current (9.4 A), indicating broader current range capability.
Q: Are all three parts mechanically compatible?
A: Yes. All three diodes use DO-201AD axial through-hole package with identical pin spacing and mounting requirements. No PCB layout modifications are required for substitution.
Q: What is the impact of operating temperature range differences?
A: 1N5401GP-AP operates from -55°C to 150°C, while both Vishay substitutes operate from -50°C to 150°C. The 5°C difference at the lower limit is not significant for most applications. Verify if designs require operation below -50°C before selecting 1N5401GP-AP.
Q: Do all parts meet current compliance standards?
A: Yes. All three parts are ROHS3 compliant, REACH unaffected, and carry EAR99 ECCN classification. No compliance barriers exist for substitution.
Q: How does capacitance difference affect circuit performance?
A: Lower capacitance in substitute parts (30 pF and 28 pF vs. 40 pF) reduces junction capacitance effects, improving performance in high-frequency rectification and switching applications. For low-frequency power supply applications, this difference is negligible.
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