1N5263C-TAP Zener Diode Equivalent & Substitute Parts

Part Overview

The 1N5263C-TAP is a through-hole zener diode rated at 56 V nominal with 500 mW maximum power dissipation. Manufactured by Vishay General Semiconductor - Diodes Division, this component is classified as an automotive-grade diode with AEC-Q101 qualification. The part is currently in active production status with 776 pieces available in new original inventory.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter tolerances while maintaining compliance with applicable standards and certifications. The primary substitute for the 1N5263C-TAP is the BZX79-B56,113 from Nexperia USA Inc., which provides comparable zener voltage regulation at 56 V with ±2% tolerance.

Substiute Parts

1N5263C-TAP

Vishay General Semiconductor - Diodes DivisionIn Stock: 8001N5263C-TAP Datasheet

Current PartRFQ

BZX79-B56,113

Nexperia USA Inc.In Stock: 10147BZX79-B56,113 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the 1N5263C-TAP is determined by the following critical parameters:

Electrical Equivalence Criteria:

• Zener voltage (Vz) must be 56 V nominal with ±2% tolerance
• Through-hole axial package configuration (DO-35 / DO-204AH)
• RoHS3 compliance and REACH unaffected status
• Operating temperature range compatibility

Functional Compatibility: The BZX79-B56,113 qualifies as a substitute because it maintains the same nominal zener voltage of 56 V at ±2% tolerance and is packaged in the equivalent DO-35 axial through-hole configuration. Both components are RoHS3 compliant and REACH unaffected, ensuring regulatory alignment.

Power Rating Consideration: The 1N5263C-TAP is rated at 500 mW maximum power dissipation, while the BZX79-B56,113 is rated at 400 mW. The substitute part operates at a lower power rating and must be evaluated within the specific circuit application to ensure adequate thermal margin.

Parameter Comparison

Engineering Selection Recommendations

Primary Substitute: BZX79-B56,113

The BZX79-B56,113 from Nexperia USA Inc. is the qualified substitute for the 1N5263C-TAP. Both components share identical zener voltage specifications (56 V ±2%) and are packaged in the standard DO-35 axial through-hole configuration. Both maintain ROHS3 compliance and REACH unaffected status, ensuring regulatory alignment across automotive and industrial applications.

Operational Differences:

The BZX79-B56,113 operates across an extended temperature range (-65°C to 200°C) compared to the 1N5263C-TAP (-65°C to 175°C), providing additional thermal margin in high-temperature environments. The substitute part exhibits lower reverse leakage current (50 nA @ 39.2 V) relative to the primary part (100 nA @ 43 V), indicating improved leakage characteristics.

Power Rating Variance:

The substitute part is rated at 400 mW maximum power dissipation versus the primary part's 500 mW rating. This 100 mW reduction requires circuit-level evaluation to confirm adequate thermal performance under maximum operating conditions. The impedance specification increases from 150 Ohms to 200 Ohms, which may affect voltage regulation characteristics in high-impedance circuit configurations.

Inventory and Availability:

The BZX79-B56,113 maintains significantly higher inventory availability (10,100 pieces) compared to the 1N5263C-TAP (776 pieces), supporting supply chain continuity and lead-time reduction.

Frequently Asked Questions (FAQ)

Q: Can the BZX79-B56,113 be used as a direct replacement for the 1N5263C-TAP in all applications?

A: The BZX79-B56,113 qualifies as a substitute based on matching zener voltage (56 V ±2%), identical package configuration (DO-35), and equivalent regulatory compliance. However, the 100 mW reduction in maximum power rating (400 mW vs. 500 mW) requires verification that circuit operating conditions remain within the substitute part's thermal limits. The increased impedance (200 Ohms vs. 150 Ohms) may affect voltage regulation performance in specific circuit topologies.

Q: Are both parts automotive-grade components?

A: The 1N5263C-TAP carries automotive-grade classification with AEC-Q101 qualification. The BZX79-B56,113 specifications provided do not include automotive-grade designation or AEC-Q101 qualification status. Applications requiring automotive-grade certification must confirm the substitute part's qualification level with the manufacturer.

Q: What is the significance of the impedance difference between these parts?

A: The 1N5263C-TAP specifies maximum impedance of 150 Ohms, while the BZX79-B56,113 specifies 200 Ohms. Impedance affects the dynamic voltage regulation characteristics of the zener diode. Higher impedance results in greater voltage variation across the operating current range. Circuit designs with tight voltage regulation requirements must evaluate whether the 50 Ohm impedance increase is acceptable.

Q: Do both parts have identical reverse leakage characteristics?

A: No. The 1N5263C-TAP exhibits 100 nA reverse leakage at 43 V, while the BZX79-B56,113 exhibits 50 nA at 39.2 V. The substitute part demonstrates lower leakage current, which may improve circuit performance in applications sensitive to leakage-induced bias currents.

Q: Are the packaging and pinout configurations identical?

A: Both components use the DO-35 axial through-hole package (DO-204AH). The axial lead configuration and physical dimensions are equivalent, allowing direct mechanical substitution on printed circuit boards without layout modifications.

Q: What is the temperature operating range difference?

A: The 1N5263C-TAP operates from -65°C to 175°C, while the BZX79-B56,113 operates from -65°C to 200°C. The substitute part provides an additional 25°C upper temperature margin, which may be beneficial in high-temperature environments but is not required for standard industrial temperature ranges.

Q: Are both parts RoHS3 compliant?

A: Yes. Both the 1N5263C-TAP and BZX79-B56,113 are ROHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements for electronic component manufacturing and distribution.