1N5230B-T Zener Diode Equivalent & Substitute Parts

Part Overview

The 1N5230B-T is a 4.7 V zener diode rated at 500 mW in a DO-35 through-hole package, manufactured by Diodes Incorporated. This component is classified as obsolete, indicating that direct replacements from the original manufacturer are no longer in production. Equivalent and substitute parts are necessary to maintain circuit functionality and ensure continued availability for repair, maintenance, and new design implementations.

Substiute Parts

1N5230B-T
Diodes IncorporatedIn Stock: 11591N5230B-T Datasheet
1N5230B-T
Current Part
1N5230B BK TIN/LEAD
Central Semiconductor CorpIn Stock: 11081N5230B BK TIN/LEAD Datasheet
1N5230B BK TIN/LEAD
Direct
1N5230BDO35
Microsemi CorporationIn Stock: 10521N5230BDO35 Datasheet
1N5230BDO35
Direct
1N750A BK PBFREE
Central Semiconductor CorpIn Stock: 109451N750A BK PBFREE Datasheet
1N750A BK PBFREE
Direct
1N3510A
Microchip TechnologyIn Stock: 9421N3510A Datasheet
1N3510A
MFR Recommended
1N4624 TR PBFREE
Central Semiconductor CorpIn Stock: 66501N4624 TR PBFREE Datasheet
1N4624 TR PBFREE
MFR Recommended
1N4624-1
Microchip TechnologyIn Stock: 11051N4624-1 Datasheet
1N4624-1
MFR Recommended
1N5230A
Microchip TechnologyIn Stock: 7231N5230A Datasheet
1N5230A
MFR Recommended
1N5230A (DO-35)
Microsemi CorporationIn Stock: 7271N5230A (DO-35) Datasheet
1N5230A (DO-35)
MFR Recommended
1N5230B
Microchip TechnologyIn Stock: 12681N5230B Datasheet
1N5230B
MFR Recommended
1N5230B
Microchip TechnologyIn Stock: 12681N5230B Datasheet
1N5230B
MFR Recommended
1N5230B-TAP
Vishay General Semiconductor - Diodes DivisionIn Stock: 13081N5230B-TAP Datasheet
1N5230B-TAP
MFR Recommended
1N5522B (DO35)
Microsemi CorporationIn Stock: 9031N5522B (DO35) Datasheet
1N5522B (DO35)
MFR Recommended
1N5728B
Microchip TechnologyIn Stock: 10871N5728B Datasheet
1N5728B
MFR Recommended
1N5728C
Microchip TechnologyIn Stock: 7601N5728C Datasheet
1N5728C
MFR Recommended
1N5728D
Microchip TechnologyIn Stock: 6621N5728D Datasheet
1N5728D
MFR Recommended
1N5992A
Microchip TechnologyIn Stock: 11521N5992A Datasheet
1N5992A
MFR Recommended
1N5992B
Microchip TechnologyIn Stock: 9121N5992B Datasheet
1N5992B
MFR Recommended
1N5992C
Microchip TechnologyIn Stock: 11121N5992C Datasheet
1N5992C
MFR Recommended
1N5992D
Microchip TechnologyIn Stock: 9301N5992D Datasheet
1N5992D
MFR Recommended
1N750A-1
Microchip TechnologyIn Stock: 13451N750A-1 Datasheet
1N750A-1
MFR Recommended
BZX55C4V7-TAP
Vishay General Semiconductor - Diodes DivisionIn Stock: 31476BZX55C4V7-TAP Datasheet
BZX55C4V7-TAP
MFR Recommended
BZX55C4V7-TR
Vishay General Semiconductor - Diodes DivisionIn Stock: 81969BZX55C4V7-TR Datasheet
BZX55C4V7-TR
MFR Recommended
BZX79C4V7
Taiwan Semiconductor CorporationIn Stock: 2740BZX79C4V7 Datasheet
BZX79C4V7
MFR Recommended
BZX79C4V7-T50A
onsemiIn Stock: 13005BZX79C4V7-T50A Datasheet
BZX79C4V7-T50A
MFR Recommended
TZX4V7A-TAP
Vishay General Semiconductor - Diodes DivisionIn Stock: 31176TZX4V7A-TAP Datasheet
TZX4V7A-TAP
MFR Recommended
TZX4V7A-TR
Vishay General Semiconductor - Diodes DivisionIn Stock: 31153TZX4V7A-TR Datasheet
TZX4V7A-TR
MFR Recommended
TZX4V7B-TAP
Vishay General Semiconductor - Diodes DivisionIn Stock: 30278TZX4V7B-TAP Datasheet
TZX4V7B-TAP
MFR Recommended
TZX4V7B-TR
Vishay General Semiconductor - Diodes DivisionIn Stock: 938TZX4V7B-TR Datasheet
TZX4V7B-TR
MFR Recommended
TZX4V7C-TAP
Vishay General Semiconductor - Diodes DivisionIn Stock: 955TZX4V7C-TAP Datasheet
TZX4V7C-TAP
MFR Recommended
TZX4V7C-TR
Vishay General Semiconductor - Diodes DivisionIn Stock: 34221TZX4V7C-TR Datasheet
TZX4V7C-TR
MFR Recommended
TZX4V7D-TAP
Vishay General Semiconductor - Diodes DivisionIn Stock: 35455TZX4V7D-TAP Datasheet
TZX4V7D-TAP
MFR Recommended
TZX4V7D-TR
Vishay General Semiconductor - Diodes DivisionIn Stock: 19063TZX4V7D-TR Datasheet
TZX4V7D-TR
MFR Recommended
1N5230B TR PBFREE
Central Semiconductor CorpIn Stock: 95081N5230B TR PBFREE Datasheet
1N5230B TR PBFREE
Parametric Equivalent
1N5230BTR
Fairchild SemiconductorIn Stock: 403651N5230BTR Datasheet
1N5230BTR
Parametric Equivalent
1N750A TR PBFREE
Central Semiconductor CorpIn Stock: 323351N750A TR PBFREE Datasheet
1N750A TR PBFREE
Parametric Equivalent

Key Parameters

Parameter Value
Voltage - Zener (Nom) 4.7 V
Tolerance ±5%
Power - Max 500 mW
Impedance (Max) 19 Ohms
Current - Reverse Leakage @ Vr 5 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 200 mA
Operating Temperature -65°C ~ 200°C
Mounting Type Through Hole
Package / Case DO-204AH, DO-35, Axial

Substitute Part Grouping Explanation

Substitution of the 1N5230B-T is determined by the following critical parameters:

Primary Substitution Criteria:

  • Zener voltage: 4.7 V nominal
  • Tolerance: ±5% (allows substitution with ±5% or tighter tolerance)
  • Power rating: 500 mW minimum
  • Package: DO-35 through-hole axial configuration
  • Impedance: 19 Ohms maximum
  • Reverse leakage: 5 µA @ 2 V maximum
  • Forward voltage: 1.1 V @ 200 mA maximum
  • Operating temperature range: -65°C to 200°C minimum

Substitute parts are grouped into two categories:

Category 1: Direct Electrical Equivalents (All Parameters Match) Parts that meet or exceed all electrical specifications and maintain identical operating temperature ranges and impedance characteristics.

Category 2: Functional Equivalents (Core Parameters Match with Minor Deviations) Parts that maintain the 4.7 V zener voltage, 500 mW power rating, and DO-35 package but may have variations in reverse leakage current, forward voltage, or maximum operating temperature that do not compromise circuit functionality within the original design parameters.

Parameter Comparison

Part Number Manufacturer Vz (Nom) Tolerance Power (Max) Zzt (Max) Reverse Leakage @ Vr Vf (Max) @ If Temp Range Package Status
1N5230B-T Diodes Incorporated 4.7 V ±5% 500 mW 19 Ω 5 µA @ 2 V 1.1 V @ 200 mA -65°C ~ 200°C DO-35 Obsolete
1N5230B BK TIN/LEAD Central Semiconductor Corp 4.7 V ±5% 500 mW 19 Ω 5 µA @ 2 V 1.1 V @ 200 mA -65°C ~ 200°C DO-35 Active
1N5230BDO35 Microsemi Corporation 4.7 V ±5% 500 mW 19 Ω 50 µA @ 2 V 1.5 V @ 200 mA -65°C ~ 175°C DO-35 Active
1N750A BK PBFREE Central Semiconductor Corp 4.7 V ±5% 500 mW 19 Ω 2 µA @ 1 V 1.5 V @ 200 mA -65°C ~ 200°C DO-35 Active
1N3510A Microchip Technology 4.7 V ±5% 500 mW 16 Ω Not specified 1.1 V @ 200 mA -65°C ~ 175°C DO-35 Active
1N5230A Microchip Technology 4.7 V ±10% 500 mW 19 Ω 50 µA @ 1.9 V 1.5 V @ 200 mA -65°C ~ 175°C DO-35 Active
1N5230A (DO-35) Microsemi Corporation 4.7 V ±10% 500 mW 19 Ω 50 µA @ 1.9 V 1.5 V @ 200 mA -65°C ~ 175°C DO-35 Active
1N5230B Microchip Technology 4.7 V ±5% 500 mW 19 Ω 50 µA @ 2 V 1.5 V @ 200 mA -65°C ~ 175°C DO-35 Active
1N4624 TR PBFREE Central Semiconductor Corp 4.7 V ±5% 250 mW 1550 Ω 10 µA @ 3 V 1 V @ 200 mA -65°C ~ 200°C DO-35 Active
1N4624-1 Microchip Technology 4.7 V ±5% 500 mW 1550 Ω 5 µA @ 3 V 1.1 V @ 200 mA -65°C ~ 175°C DO-7 Active

Engineering Selection Recommendations

Tier 1: Direct Substitutes (Recommended for Direct Replacement)

1N5230B BK TIN/LEAD (Central Semiconductor Corp) This part provides identical electrical specifications to the original 1N5230B-T across all measured parameters. It maintains the same 4.7 V nominal zener voltage, ±5% tolerance, 500 mW power rating, 19 Ohm impedance, and -65°C to 200°C operating temperature range. The part is currently in active production status with 1092 units in stock. Note: RoHS non-compliant status differs from the original part.

1N750A BK PBFREE (Central Semiconductor Corp) This part meets all core electrical requirements with identical zener voltage, tolerance, power rating, and impedance specifications. It offers superior reverse leakage characteristics (2 µA @ 1 V versus 5 µA @ 2 V) and maintains the full -65°C to 200°C operating temperature range. The part is ROHS3 compliant and currently in active production with 10879 units in stock, providing excellent availability.

Tier 2: Functional Equivalents (Acceptable for Most Applications)

1N5230B (Microchip Technology) This part maintains the 4.7 V nominal voltage, ±5% tolerance, and 500 mW power rating. Operating temperature range is reduced to -65°C to 175°C. Reverse leakage is specified at 50 µA @ 2 V and forward voltage at 1.5 V @ 200 mA, representing minor deviations from the original specification. The part is currently in active production with 1206 units in stock.

1N3510A (Microchip Technology) This part maintains the 4.7 V nominal voltage, ±5% tolerance, and 500 mW power rating with improved impedance specification (16 Ohms maximum). Operating temperature range is -65°C to 175°C. Forward voltage specification matches the original at 1.1 V @ 200 mA. The part is currently in active production with 928 units in stock.

1N5230BDO35 (Microsemi Corporation) This part maintains the 4.7 V nominal voltage, ±5% tolerance, and 500 mW power rating. Operating temperature range is -65°C to 175°C. Reverse leakage is specified at 50 µA @ 2 V and forward voltage at 1.5 V @ 200 mA. The part is ROHS3 compliant and currently in active production with 1039 units in stock.

Tier 3: Reduced Power Rating (Limited Application)

1N4624 TR PBFREE (Central Semiconductor Corp) This part maintains the 4.7 V nominal voltage and ±5% tolerance but is rated at 250 mW power dissipation, representing a 50% reduction from the original 500 mW specification. This part is suitable only for applications where the circuit power requirements do not exceed 250 mW. The part is currently in active production with 6577 units in stock.

Tier 4: Alternate Package (Package Change Required)

1N4624-1 (Microchip Technology) This part maintains the 4.7 V nominal voltage, ±5% tolerance, and 500 mW power rating but uses a DO-7 package instead of the DO-35 package. This substitution requires physical board layout modification and is suitable only when package change is acceptable. The part is currently in active production with 1031 units in stock.

Tier 5: Relaxed Tolerance (Acceptable for Non-Critical Applications)

1N5230A (Microchip Technology and Microsemi Corporation) These parts maintain the 4.7 V nominal voltage and 500 mW power rating but specify ±10% tolerance instead of ±5%. This relaxed tolerance is acceptable for applications where voltage regulation precision is not critical. Both manufacturers offer active production status with 664 and 627 units in stock respectively.

Frequently Asked Questions (FAQ)

Q: Can I use 1N750A BK PBFREE as a direct replacement for 1N5230B-T?

A: Yes. The 1N750A BK PBFREE maintains identical zener voltage (4.7 V), tolerance (±5%), power rating (500 mW), and impedance (19 Ohms) specifications. It provides superior reverse leakage performance and extends the operating temperature range to the full -65°C to 200°C specification. The part is ROHS3 compliant and currently in active production.

Q: What is the difference between 1N5230B and 1N5230A?

A: The primary difference is tolerance specification. The 1N5230B maintains ±5% tolerance while the 1N5230A specifies ±10% tolerance. Both parts maintain the 4.7 V nominal zener voltage and 500 mW power rating. The 1N5230A is suitable for applications where tighter voltage regulation is not required.

Q: Can I substitute 1N4624 TR PBFREE for 1N5230B-T?

A: The 1N4624 TR PBFREE maintains the 4.7 V nominal voltage and ±5% tolerance but is rated at 250 mW power dissipation. This part is suitable only if your circuit power requirements do not exceed 250 mW. If your circuit requires 500 mW dissipation capability, this substitution is not appropriate.

Q: Why does 1N4624-1 have a different package designation?

A: The 1N4624-1 uses a DO-7 package instead of the DO-35 package. While both are through-hole axial packages, they have different physical dimensions. This substitution requires board layout modification and is suitable only when package change is acceptable to your design.

Q: What does RoHS compliance mean for zener diode selection?

A: RoHS (Restriction of Hazardous Substances) compliance indicates the part does not contain restricted materials such as lead, mercury, or cadmium. ROHS3 compliant parts meet current regulatory requirements. If your application requires RoHS compliance, select parts with ROHS3 status such as 1N750A BK PBFREE or 1N5230BDO35.

Q: How do I determine which substitute part is best for my application?

A: Evaluate your circuit requirements against the following parameters in order of priority: (1) Zener voltage and tolerance, (2) Power dissipation requirement, (3) Package type, (4) Operating temperature range, (5) Compliance requirements (RoHS, REACH). Select the lowest-tier substitute that meets all your requirements.

Q: What is the significance of reverse leakage current specification?

A: Reverse leakage current indicates the small current that flows through the zener diode when it is reverse-biased below the zener voltage. Lower reverse leakage (such as 2 µA in 1N750A BK PBFREE) indicates better performance in precision voltage regulation applications. Higher reverse leakage (such as 50 µA in some alternatives) is acceptable for general-purpose applications.

Q: Can I use parts with different operating temperature ranges?

A: Yes, if your circuit operates within the reduced temperature range. For example, if your circuit operates between -40°C and 85°C, you can use parts rated for -65°C to 175°C. However, if your circuit requires operation at 200°C, you must select parts with the extended temperature range such as 1N5230B-T or 1N750A BK PBFREE.

Q: What does impedance (Zzt) specification mean?

A: Impedance represents the dynamic resistance of the zener diode in the breakdown region. Lower impedance (such as 16-19 Ohms) indicates better voltage regulation performance with less voltage variation across different load currents. Higher impedance (such as 1550 Ohms in 1N4624 series) indicates reduced regulation performance but may be acceptable for non-critical applications.

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