1N5229B-TP Zener Diode Equivalent & Substitute Parts

Part Overview

The 1N5229B-TP is a 4.3 V, 500 mW Zener diode manufactured by Micro Commercial Co in a DO-35 through-hole package. This component is classified as obsolete, necessitating identification of active equivalent and substitute parts for ongoing design requirements and production continuity. The 1N5229B-TP serves voltage regulation and protection applications requiring a nominal Zener voltage of 4.3 V with ±5% tolerance and 500 mW power dissipation capability.

Substiute Parts

1N5229B-TP
Micro Commercial CoIn Stock: 11371N5229B-TP Datasheet
1N5229B-TP
Current Part
1N5229B-T
Diodes IncorporatedIn Stock: 22051N5229B-T Datasheet
1N5229B-T
Upgrade
1N5229B
Taiwan Semiconductor CorporationIn Stock: 63401N5229B Datasheet
1N5229B
Similar
1N5229BTR
Fairchild SemiconductorIn Stock: 20411N5229BTR Datasheet
1N5229BTR
Similar
1N749A BK PBFREE
Central Semiconductor CorpIn Stock: 162621N749A BK PBFREE Datasheet
1N749A BK PBFREE
Similar
1N749A TR PBFREE
Central Semiconductor CorpIn Stock: 114421N749A TR PBFREE Datasheet
1N749A TR PBFREE
Similar
TZX4V3A-TAP
Vishay General Semiconductor - Diodes DivisionIn Stock: 40215TZX4V3A-TAP Datasheet
TZX4V3A-TAP
Similar
TZX4V3A-TR
Vishay General Semiconductor - Diodes DivisionIn Stock: 743TZX4V3A-TR Datasheet
TZX4V3A-TR
Similar
TZX4V3B-TAP
Vishay General Semiconductor - Diodes DivisionIn Stock: 1194TZX4V3B-TAP Datasheet
TZX4V3B-TAP
Similar
TZX4V3B-TR
Vishay General Semiconductor - Diodes DivisionIn Stock: 30915TZX4V3B-TR Datasheet
TZX4V3B-TR
Similar
TZX4V3C-TAP
Vishay General Semiconductor - Diodes DivisionIn Stock: 25203TZX4V3C-TAP Datasheet
TZX4V3C-TAP
Similar
TZX4V3C-TR
Vishay General Semiconductor - Diodes DivisionIn Stock: 30780TZX4V3C-TR Datasheet
TZX4V3C-TR
Similar
TZX4V3D-TAP
Vishay General Semiconductor - Diodes DivisionIn Stock: 30733TZX4V3D-TAP Datasheet
TZX4V3D-TAP
Similar
TZX4V3D-TR
Vishay General Semiconductor - Diodes DivisionIn Stock: 847TZX4V3D-TR Datasheet
TZX4V3D-TR
Similar

Key Parameters

Parameter Value Unit
Voltage - Zener (Nom) 4.3 V
Tolerance ±5% %
Power - Max 500 mW
Impedance (Max) 22 Ohms
Current - Reverse Leakage @ Vr 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 200 mA
Operating Temperature -55 to 150 °C
Mounting Type Through Hole
Package / Case DO-204AH, DO-35, Axial
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the 1N5229B-TP is determined by the following critical parameters:

Primary Substitution Criteria:

  • Voltage - Zener (Nom): 4.3 V
  • Power - Max: 500 mW
  • Mounting Type: Through Hole
  • Package / Case: DO-35 (DO-204AH)

Secondary Compatibility Parameters:

  • Tolerance: ±5%
  • Impedance (Max): 22 Ohms
  • Current - Reverse Leakage @ Vr: 5 µA @ 1 V
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA

Substitute parts are classified into two categories:

Upgrade Substitutes: Parts with identical or superior electrical specifications and active product status, suitable for direct replacement with enhanced reliability or extended operating temperature range.

Similar Substitutes: Parts meeting core electrical requirements (4.3 V nominal, 500 mW power rating, DO-35 package) with variations in secondary parameters such as impedance, leakage current, or forward voltage. These parts are functionally equivalent for standard applications but may exhibit different performance characteristics in precision circuits.

Parameter Comparison

Part Number Manufacturer Vz (Nom) Power (Max) Impedance (Max) Reverse Leakage @ Vr Vf (Max) @ If Operating Temp Product Status Package
1N5229B-TP Micro Commercial Co 4.3 V 500 mW 22 Ω 5 µA @ 1 V 1.1 V @ 200 mA -55 to 150°C Obsolete DO-35
1N5229B-T Diodes Incorporated 4.3 V 500 mW 22 Ω 5 µA @ 1 V 1.1 V @ 200 mA -65 to 200°C Active DO-35
1N5229B Taiwan Semiconductor Corporation 4.3 V 500 mW 22 Ω 5 µA @ 1 V 1.1 V @ 200 mA -55 to 200°C Active DO-35
1N5229BTR Fairchild Semiconductor 4.3 V 500 mW 22 Ω 5 µA @ 1 V Not specified Not specified Active DO-35
1N749A BK PBFREE Central Semiconductor Corp 4.3 V 500 mW 22 Ω 2 µA @ 1 V 1.5 V @ 200 mA -65 to 200°C Active DO-35
1N749A TR PBFREE Central Semiconductor Corp 4.3 V 500 mW 22 Ω 2 µA @ 1 V 1.5 V @ 200 mA -65 to 200°C Active DO-35
TZX4V3A-TAP Vishay General Semiconductor - Diodes Division 4.3 V 500 mW 100 Ω 5 µA @ 1.5 V 1.5 V @ 200 mA -65 to 175°C Active DO-35
TZX4V3A-TR Vishay General Semiconductor - Diodes Division 4.3 V 500 mW 100 Ω 5 µA @ 1.5 V 1.5 V @ 200 mA -65 to 175°C Active DO-35
TZX4V3B-TAP Vishay General Semiconductor - Diodes Division 4.3 V 500 mW 100 Ω 5 µA @ 1.5 V 1.5 V @ 200 mA -65 to 175°C Active DO-35
TZX4V3B-TR Vishay General Semiconductor - Diodes Division 4.3 V 500 mW 100 Ω 5 µA @ 1.5 V 1.5 V @ 200 mA -65 to 175°C Active DO-35
TZX4V3C-TAP Vishay General Semiconductor - Diodes Division 4.3 V 500 mW 100 Ω 5 µA @ 1.5 V 1.5 V @ 200 mA -65 to 175°C Active DO-35

Engineering Selection Recommendations

Upgrade Substitutes (Recommended for New Designs):

The 1N5229B-T (Diodes Incorporated) is the primary upgrade substitute. This part maintains identical electrical specifications to the original 1N5229B-TP while offering an extended operating temperature range of -65°C to 200°C compared to the original -55°C to 150°C. The part is active and ROHS3 compliant with MSL rating of 1 (Unlimited), ensuring long-term availability and supply chain stability.

Direct Electrical Equivalents:

The 1N5229B (Taiwan Semiconductor Corporation) and 1N5229BTR (Fairchild Semiconductor) provide direct electrical equivalence with identical impedance (22 Ω) and leakage current specifications. Both parts are active and suitable for applications requiring the original electrical performance envelope. The 1N5229B offers extended upper temperature rating to 200°C.

Functionally Compatible Alternatives:

The 1N749A series (Central Semiconductor Corp, both BK PBFREE and TR PBFREE variants) meets core electrical requirements with 4.3 V nominal voltage and 500 mW power rating. These parts exhibit lower reverse leakage current (2 µA @ 1 V versus 5 µA @ 1 V) and higher forward voltage (1.5 V @ 200 mA versus 1.1 V @ 200 mA). Operating temperature range extends to -65°C to 200°C. These characteristics make them suitable for applications where lower leakage is beneficial, though forward voltage differences must be evaluated in forward-biased circuit configurations.

Automotive-Grade Alternatives:

The TZX4V3 series (Vishay General Semiconductor - Diodes Division) in variants A, B, and C with TAP and TR packaging options are AEC-Q101 qualified automotive-grade components. These parts feature higher impedance (100 Ω versus 22 Ω) and are suitable for automotive and high-reliability applications. Operating temperature range is -65°C to 175°C. The higher impedance may affect circuit performance in applications sensitive to dynamic impedance characteristics.

Product Status Consideration:

All recommended substitute parts maintain active product status, ensuring continued availability and manufacturing support. The original 1N5229B-TP is obsolete and should be replaced in new designs or production revisions.

Frequently Asked Questions (FAQ)

Q: Can the 1N5229B-T directly replace the 1N5229B-TP in existing designs?

A: Yes. The 1N5229B-T maintains identical electrical specifications including 4.3 V nominal Zener voltage, 500 mW power rating, 22 Ω impedance, and DO-35 package configuration. The extended operating temperature range (-65°C to 200°C versus -55°C to 150°C) provides enhanced performance margin without circuit modification.

Q: What is the difference between the 1N749A and 1N5229B series?

A: Both series provide 4.3 V nominal Zener voltage and 500 mW power rating in DO-35 packages. The 1N749A exhibits lower reverse leakage current (2 µA @ 1 V) and higher forward voltage (1.5 V @ 200 mA) compared to the 1N5229B (5 µA @ 1 V and 1.1 V @ 200 mA). Selection depends on circuit requirements for leakage and forward voltage characteristics.

Q: Are the TZX4V3 series parts suitable for non-automotive applications?

A: Yes. The TZX4V3 series meets all electrical requirements for standard 4.3 V, 500 mW Zener applications. AEC-Q101 automotive qualification indicates enhanced reliability and manufacturing controls, making these parts suitable for any application requiring high reliability. The higher impedance (100 Ω) must be evaluated against circuit sensitivity to dynamic impedance.

Q: What packaging options are available for substitute parts?

A: Substitute parts are available in multiple packaging formats: Tape & Reel (TR), Cut Tape (CT), Tape & Box (TB), and Bulk. Selection depends on production volume and assembly process requirements. All variants maintain identical electrical specifications and DO-35 through-hole package configuration.

Q: Does impedance variation affect circuit performance?

A: Impedance differences between parts (22 Ω for 1N5229B series versus 100 Ω for TZX4V3 series) affect dynamic response characteristics. In applications requiring precise voltage regulation or fast transient response, impedance variation may impact performance. Circuit simulation or testing is necessary to confirm suitability in impedance-sensitive applications.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed are ROHS3 compliant and REACH unaffected, meeting environmental and regulatory requirements for current manufacturing standards.

Q: What is the significance of MSL rating on substitute parts?

A: MSL (Moisture Sensitivity Level) rating of 1 (Unlimited) on substitute parts indicates no moisture sensitivity restrictions. These parts can be stored and handled without special moisture control measures, simplifying supply chain management compared to higher MSL ratings.

Request Quote (Ships tomorrow)