1N5225B-TP Zener Diode Equivalent & Substitute Parts

Part Overview

The 1N5225B-TP is a 3 V, 500 mW Zener diode manufactured by Micro Commercial Co in a DO-35 through-hole package. This component is classified as obsolete, necessitating identification of active equivalent and substitute parts for ongoing design requirements and procurement needs. The 1N5225B-TP serves voltage regulation and protection applications requiring a nominal Zener voltage of 3 V with ±5% tolerance and through-hole mounting configuration.

Substiute Parts

1N5225B-TP

Micro Commercial CoIn Stock: 101861N5225B-TP Datasheet

Current PartRFQ

1N5225B

Taiwan Semiconductor CorporationIn Stock: 13301N5225B Datasheet

SimilarRFQ

1N5225B-TR

Vishay General Semiconductor - Diodes DivisionIn Stock: 163991N5225B-TR Datasheet

SimilarRFQ

BZX55B3V0-TR

Vishay General Semiconductor - Diodes DivisionIn Stock: 843BZX55B3V0-TR Datasheet

SimilarRFQ

NZX3V0B,133

NXP USA Inc.In Stock: 45961NZX3V0B,133 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the 1N5225B-TP is determined by the following critical parameters:

Primary Substitution Criteria:

• Voltage - Zener (Nom): 3 V (exact match required)
• Power - Max: 500 mW (exact match required)
• Mounting Type: Through Hole (exact match required)
• Package / Case: DO-35 or DO-204AH (exact match required)
• RoHS Status: ROHS3 Compliant (compliance requirement)

Secondary Compatibility Parameters:

• Tolerance: ±5% or tighter (±2%, ±3% acceptable as improvements)
• Impedance (Max): 29 Ohms or lower (lower values acceptable)
• Current - Reverse Leakage @ Vr: 50 µA @ 1 V or lower (lower values acceptable)
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA or lower (lower values acceptable)
• Operating Temperature: -55°C ~ 150°C or wider range (extended ranges acceptable)

All identified substitute parts meet the primary substitution criteria. Variations in secondary parameters represent either equivalent or improved electrical characteristics suitable for direct replacement in applications designed for the 1N5225B-TP.

Parameter Comparison

Engineering Selection Recommendations

Direct Equivalents (Identical Electrical Characteristics):

The 1N5225B from Taiwan Semiconductor Corporation and 1N5225B-TR from Vishay General Semiconductor - Diodes Division are direct electrical equivalents to the 1N5225B-TP. Both parts maintain identical nominal Zener voltage (3 V), tolerance (±5%), maximum power dissipation (500 mW), impedance (29 Ohms), reverse leakage current (50 µA @ 1 V), and forward voltage (1.1 V @ 200 mA). Both substitute parts are active products with ROHS3 compliance. The 1N5225B-TR offers the highest inventory availability (16383 Pcs) among active equivalents.

Improved Performance Alternatives:

The BZX55B3V0-TR from Vishay General Semiconductor - Diodes Division provides improved electrical characteristics including tighter tolerance (±2% versus ±5%), significantly lower reverse leakage current (4 µA @ 1 V versus 50 µA @ 1 V), and extended operating temperature range (-65°C ~ 175°C versus -55°C ~ 150°C). This part carries AEC-Q101 automotive qualification and is suitable for applications requiring enhanced performance specifications. The impedance specification (85 Ohms) is higher than the original part, which may affect circuit performance in applications sensitive to dynamic impedance characteristics.

The NZX3V0B,133 from NXP USA Inc. offers improved tolerance (±3% versus ±5%), reduced reverse leakage current (10 µA @ 1 V versus 50 µA @ 1 V), and extended operating temperature range (-55°C ~ 175°C). This part provides the highest inventory availability (45925 Pcs) and represents a cost-effective alternative with improved electrical characteristics. The impedance specification (100 Ohms) is higher than the original part.

Selection Basis:

Selection among active substitute parts should be based on application requirements for tolerance, reverse leakage current, operating temperature range, and impedance characteristics. All identified substitutes maintain the critical parameters of 3 V nominal Zener voltage, 500 mW maximum power dissipation, through-hole mounting, and DO-35 package compatibility. Product status (all active) and RoHS compliance ensure long-term availability and regulatory conformance.

Frequently Asked Questions (FAQ)

Q: Can the 1N5225B-TP be directly replaced with the 1N5225B from Taiwan Semiconductor Corporation?

A: Yes. The 1N5225B from Taiwan Semiconductor Corporation is a direct electrical equivalent. Both parts share identical nominal Zener voltage (3 V), tolerance (±5%), maximum power dissipation (500 mW), impedance (29 Ohms), reverse leakage current (50 µA @ 1 V), and forward voltage (1.1 V @ 200 mA). Both are ROHS3 compliant and use through-hole DO-35 packaging. The primary difference is manufacturer and product status (active versus obsolete).

Q: What is the difference between the 1N5225B-TR and BZX55B3V0-TR?

A: Both parts maintain the same nominal Zener voltage (3 V) and maximum power dissipation (500 mW) in DO-35 through-hole packages. The BZX55B3V0-TR provides improved specifications: tighter tolerance (±2% versus ±5%), significantly lower reverse leakage current (4 µA @ 1 V versus 50 µA @ 1 V), extended operating temperature range (-65°C ~ 175°C versus -55°C ~ 150°C), and AEC-Q101 automotive qualification. The BZX55B3V0-TR has higher impedance (85 Ohms versus 29 Ohms) and higher forward voltage (1.5 V @ 200 mA versus 1.1 V @ 200 mA).

Q: Is the NZX3V0B,133 suitable as a replacement for the 1N5225B-TP?

A: Yes. The NZX3V0B,133 maintains the same nominal Zener voltage (3 V), maximum power dissipation (500 mW), and through-hole DO-35 packaging. It provides improved tolerance (±3% versus ±5%), reduced reverse leakage current (10 µA @ 1 V versus 50 µA @ 1 V), and extended operating temperature range (-55°C ~ 175°C). The impedance (100 Ohms) and forward voltage (1.5 V @ 200 mA) are higher than the original part. This part is active and offers the highest inventory availability among all substitutes.

Q: What are the key parameters that determine substitution compatibility?

A: Substitution compatibility is determined by: nominal Zener voltage (3 V exact match), maximum power dissipation (500 mW exact match), mounting type (through-hole exact match), and package type (DO-35 or DO-204AH exact match). Secondary parameters including tolerance, impedance, reverse leakage current, forward voltage, and operating temperature range may vary, with tighter tolerances and lower leakage currents representing acceptable improvements.

Q: Can I use the BZX55B3V0-TR in an application designed for the 1N5225B-TP if the impedance difference is a concern?

A: The BZX55B3V0-TR maintains identical nominal Zener voltage (3 V) and maximum power dissipation (500 mW) in the same DO-35 through-hole package. The higher impedance (85 Ohms versus 29 Ohms) and forward voltage (1.5 V @ 200 mA versus 1.1 V @ 200 mA) may affect circuit performance in applications with specific impedance or voltage drop requirements. Application-specific circuit analysis is necessary to determine compatibility when impedance characteristics are critical to circuit function.

Q: Are all substitute parts RoHS compliant?

A: The 1N5225B (TSC), 1N5225B-TR (Vishay), and BZX55B3V0-TR (Vishay) are explicitly specified as ROHS3 compliant. The NZX3V0B,133 (NXP) does not have RoHS status specified in the provided data. For applications requiring RoHS compliance certification, the Vishay and Taiwan Semiconductor Corporation parts provide documented compliance.

Q: What is the inventory status of each substitute part?

A: Current inventory levels are: 1N5225B (TSC) 1308 Pcs, 1N5225B-TR (Vishay) 16383 Pcs, BZX55B3V0-TR (Vishay) 809 Pcs, and NZX3V0B,133 (NXP) 45925 Pcs. The NZX3V0B,133 offers the highest inventory availability, while the BZX55B3V0-TR offers the lowest among active substitutes.