1N4935RL Equivalent & Substitute Parts

Part Overview

The 1N4935RL is a general-purpose rectifier diode manufactured by onsemi, rated for 200 V DC reverse voltage and 1 A average rectified current in a through-hole axial package (DO-204AL, DO-41). The device features fast recovery characteristics with a reverse recovery time of 300 ns and forward voltage of 1.2 V at 1 A. The 1N4935RL is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design support and procurement.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	200	V
Current - Average Rectified (Io)	1	A
Voltage - Forward (Vf) (Max) @ If	1.2 V @ 1 A	V
Speed Classification	Fast Recovery ≤ 500ns, > 200mA (Io)	—
Reverse Recovery Time (trr)	300	ns
Current - Reverse Leakage @ Vr	5	µA @ 200 V
Mounting Type	Through Hole	—
Package / Case	DO-204AL, DO-41, Axial	—
Operating Temperature - Junction	-65°C ~ 150°C	°C
RoHS Status	RoHS non-compliant	—

Substitute Part Grouping Explanation

Substitution of the 1N4935RL is determined by strict equivalence in the following electrical and mechanical parameters:

Critical Matching Parameters:

Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 1 A
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, or Axial

Performance Characteristics:

Speed Classification: Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns or lower
Forward Voltage (Vf): 1.2 V @ 1 A or lower
Reverse Leakage Current: 5 µA @ 200 V or lower

Substitute parts are grouped into two categories:

Direct Equivalents: Parts with identical electrical specifications and fast recovery characteristics (trr ≤ 300 ns), including 1N4935RLG, 1N4935-T, 1N4935G-T, and 1N4935GP-E3/54.

Functional Alternatives: Parts meeting voltage, current, and package requirements but with differing recovery characteristics or forward voltage specifications, including 1N4003G, 1N4935G, EGP10D, 1N3611, and 1N4003 variants.

Parameter Comparison

Part Number	Manufacturer	Vr (Max)	Io	Vf @ 1A	Speed	trr	Package	Temp Range	RoHS Status	Product Status
1N4935RL	onsemi	200 V	1 A	1.2 V	Fast Recovery ≤ 500ns	300 ns	DO-204AL, DO-41, Axial	-65°C ~ 150°C	RoHS non-compliant	Obsolete
1N4935RLG	onsemi	200 V	1 A	1.2 V	Fast Recovery ≤ 500ns	300 ns	DO-204AL, DO-41, Axial	-65°C ~ 150°C	ROHS3 Compliant	Not For New Designs
1N4935-T	Diodes Incorporated	200 V	1 A	1.2 V	Fast Recovery ≤ 500ns	200 ns	DO-204AL, DO-41	-65°C ~ 150°C	ROHS3 Compliant	Active
1N4935G-T	Diodes Incorporated	200 V	1 A	1.2 V	Fast Recovery ≤ 500ns	200 ns	DO-204AL, DO-41	-65°C ~ 150°C	ROHS3 Compliant	Active
1N4935GP-E3/54	Vishay General Semiconductor - Diodes Division	200 V	1 A	1.2 V	Fast Recovery ≤ 500ns	200 ns	DO-204AL, DO-41	-65°C ~ 175°C	ROHS3 Compliant	Active
1N4935G	Taiwan Semiconductor Corporation	200 V	1 A	1.2 V	Fast Recovery ≤ 500ns	200 ns	DO-204AL, DO-41	-55°C ~ 150°C	ROHS3 Compliant	Active
EGP10D	Fairchild Semiconductor	200 V	1 A	950 mV	Fast Recovery ≤ 500ns	50 ns	DO-204AL, DO-41	-65°C ~ 150°C	—	Active
1N4003G	Taiwan Semiconductor Corporation	200 V	1 A	1 V	Standard Recovery >500ns	—	DO-204AL, DO-41	-55°C ~ 150°C	ROHS3 Compliant	Active
1N4003-E3/53	Vishay General Semiconductor - Diodes Division	200 V	1 A	1.1 V	Standard Recovery >500ns	—	DO-204AL, DO-41	-55°C ~ 150°C	ROHS3 Compliant	Active
1N4003-E3/73	Vishay General Semiconductor - Diodes Division	200 V	1 A	1.1 V	Standard Recovery >500ns	—	DO-204AL, DO-41	-55°C ~ 150°C	ROHS3 Compliant	Active
1N3611	Microchip Technology	200 V	1 A	1.1 V	Standard Recovery >500ns	—	A, Axial	-65°C ~ 175°C	RoHS non-compliant	Active

Engineering Selection Recommendations

For Active Production Designs:

The 1N4935-T (Diodes Incorporated) and 1N4935G-T (Diodes Incorporated) are recommended as primary substitutes. Both parts maintain identical electrical specifications to the 1N4935RL with improved reverse recovery time (200 ns versus 300 ns), are ROHS3 compliant, and carry active product status. These parts are available in cut tape and tape & reel packaging formats suitable for automated assembly.

The 1N4935GP-E3/54 (Vishay General Semiconductor - Diodes Division) provides an alternative with extended operating temperature range (-65°C ~ 175°C) and ROHS3 compliance. This part is designated as part of the SUPERECTIFIER® series and is actively supported.

For Legacy System Maintenance:

The 1N4935RLG (onsemi) provides the closest electrical match to the 1N4935RL with identical specifications and fast recovery characteristics. Although classified as "Not For New Designs," this part maintains ROHS3 compliance and is suitable for replacement in existing systems where the original 1N4935RL is no longer available.

For Applications Tolerant of Standard Recovery Characteristics:

The 1N4003-E3/53 and 1N4003-E3/73 (Vishay General Semiconductor - Diodes Division) are functionally compatible alternatives with 200 V / 1 A ratings and ROHS3 compliance. These parts employ standard recovery characteristics (>500 ns) rather than fast recovery, resulting in lower forward voltage (1.1 V) and reduced reverse leakage. These substitutes are appropriate for non-critical rectification applications where recovery speed is not a design constraint.

The 1N4003G (Taiwan Semiconductor Corporation) offers similar functional compatibility with standard recovery characteristics and active product status.

Compliance Considerations:

Parts with ROHS3 compliance are preferred for new designs and procurement. The 1N4935RL and 1N3611 are RoHS non-compliant and should not be specified for new applications subject to RoHS regulations. All recommended substitutes carry ROHS3 compliance or equivalent environmental certifications.

Frequently Asked Questions (FAQ)

Q: Can the 1N4935RL be directly replaced with the 1N4935RLG?

A: The 1N4935RLG is electrically equivalent to the 1N4935RL with identical voltage, current, and recovery specifications. The primary difference is RoHS compliance status (ROHS3 compliant versus non-compliant). The 1N4935RLG is suitable for direct replacement in existing designs. However, the 1N4935RLG is classified as "Not For New Designs," so the 1N4935-T or 1N4935G-T are preferred for new applications.

Q: What is the difference between fast recovery and standard recovery diodes?

A: Fast recovery diodes have reverse recovery times ≤ 500 ns and are optimized for high-frequency switching applications. Standard recovery diodes have reverse recovery times > 500 ns and are suitable for lower-frequency rectification. The 1N4935RL is a fast recovery device (300 ns). Substitutes such as the 1N4003 series employ standard recovery characteristics and are appropriate only for applications where switching speed is not critical.

Q: Are the 1N4003 series diodes suitable replacements for the 1N4935RL?

A: The 1N4003 series (1N4003G, 1N4003-E3/53, 1N4003-E3/73) meet the voltage and current requirements of the 1N4935RL but employ standard recovery characteristics rather than fast recovery. These parts are functionally compatible for general-purpose rectification but are not direct equivalents. Use 1N4003 variants only in applications where fast recovery performance is not required.

Q: What packaging options are available for 1N4935 substitutes?

A: The 1N4935RL is supplied in axial through-hole packaging (DO-204AL, DO-41). All recommended substitutes maintain the same through-hole axial package format. Packaging variants include cut tape (CT), tape & reel (TR), and bulk formats. Selection depends on assembly method and procurement requirements. The 1N4935-T is available in cut tape format, while the 1N4935G-T is supplied in tape & reel format.

Q: Does the 1N3611 provide a suitable alternative to the 1N4935RL?

A: The 1N3611 (Microchip Technology) meets the 200 V / 1 A electrical requirements but differs in package format (A, Axial versus DO-204AL, DO-41) and recovery characteristics (standard recovery versus fast recovery). The 1N3611 is not a direct substitute for the 1N4935RL. Use the 1N3611 only if the axial package format is acceptable and standard recovery performance is sufficient for the application.

Q: What is the temperature operating range difference between substitute parts?

A: The 1N4935RL operates from -65°C to 150°C. The 1N4935GP-E3/54 and 1N3611 extend the upper temperature limit to 175°C, providing additional thermal margin in high-temperature environments. The 1N4935G and 1N4003 variants are limited to -55°C minimum junction temperature, which may be restrictive for applications requiring extended low-temperature operation.

Q: Are all recommended substitutes RoHS compliant?

A: All active production substitutes (1N4935-T, 1N4935G-T, 1N4935GP-E3/54, 1N4935G, 1N4003G, 1N4003-E3/53, 1N4003-E3/73) carry ROHS3 compliance. The 1N3611 is RoHS non-compliant. For applications subject to RoHS regulations, select only ROHS3-compliant parts.

Q: What is the reverse leakage current specification for substitute parts?

A: The 1N4935RL specifies 5 µA reverse leakage at 200 V. All recommended substitutes maintain this specification or lower. The 1N3611 specifies 1 µA reverse leakage, providing superior leakage performance. Reverse leakage current is not a limiting factor in substitute selection.

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