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1N459A_S00Z Equivalent & Substitute Parts
Part Overview
The 1N459A_S00Z is a general-purpose rectifier diode manufactured by onsemi, rated for 200 V DC reverse voltage and 500 mA average rectified current in a DO-35 through-hole package. This component is classified as obsolete, necessitating identification of equivalent substitute parts for ongoing design requirements and procurement needs. Equivalent alternatives must maintain the same electrical performance characteristics and physical package specifications to ensure direct replacement capability.
Substiute Parts
Key Parameters
| Parameter | Value |
|---|---|
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Current - Average Rectified (Io) | 500 mA |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 100 mA |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Current - Reverse Leakage @ Vr | 25 nA @ 175 V |
| Capacitance @ Vr, F | 6 pF @ 0V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | DO-204AH, DO-35, Axial |
| Operating Temperature - Junction (Max) | 175°C |
| Product Status | Obsolete |
Substitute Part Grouping Explanation
Substitute parts for the 1N459A_S00Z are classified based on electrical parameter compatibility within the rectifier diode category. The primary substitution criteria are:
Parametric Equivalents maintain identical electrical specifications across all critical parameters: 200 V reverse voltage rating, 500 mA average rectified current, 1 V forward voltage at 100 mA, standard recovery speed characteristics, 25 nA reverse leakage current at 175 V, and 6 pF capacitance at 0V/1MHz. These parts are direct functional replacements with no derating required.
Similar Alternatives share the same voltage rating (200 V) and package form factor (DO-35 through-hole) but differ in current-handling capacity or other secondary parameters. These parts require circuit-level evaluation to confirm suitability for the intended application.
Parameter Comparison
| Parameter | 1N459A_S00Z (onsemi) | 1N459A (Microchip Technology) | 1N459-T50R (Fairchild Semiconductor) |
|---|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 200 V | 200 V | 200 V |
| Current - Average Rectified (Io) | 500 mA | 150 mA | 500 mA |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 100 mA | 1 V @ 100 mA | 1 V @ 100 mA |
| Speed | Standard Recovery >500ns, > 200mA (Io) | Small Signal =< 200mA (Io), Any Speed | Standard Recovery >500ns, > 200mA (Io) |
| Current - Reverse Leakage @ Vr | 25 nA @ 175 V | 1 µA @ 200 V | 25 nA @ 175 V |
| Capacitance @ Vr, F | 6 pF @ 0V, 1MHz | Not specified | 6 pF @ 0V, 1MHz |
| Mounting Type | Through Hole | Through Hole | Through Hole |
| Package / Case | DO-204AH, DO-35, Axial | DO-204AH, DO-35, Axial | DO-204AH, DO-35, Axial |
| Operating Temperature - Junction (Max) | 175°C | 150°C | 175°C |
| Product Status | Obsolete | Active | Obsolete |
Engineering Selection Recommendations
1N459-T50R (Fairchild Semiconductor) is the parametric equivalent for the 1N459A_S00Z. This part maintains identical electrical specifications including 500 mA current rating, 25 nA reverse leakage, and 6 pF capacitance. Both parts share standard recovery speed characteristics and maximum junction temperature of 175°C. The 1N459-T50R is classified as obsolete, consistent with the main part status. This substitution requires no circuit modifications and provides direct functional replacement.
1N459A (Microchip Technology) is a similar alternative with the same 200 V voltage rating and DO-35 package configuration. However, this part is rated for 150 mA average rectified current, representing a 70% reduction from the 500 mA specification of the main part. The reverse leakage current is higher at 1 µA compared to 25 nA, and the maximum junction temperature is limited to 150°C. The 1N459A is currently active in production. This part is suitable only for applications where the 150 mA current rating is sufficient and the higher leakage current is acceptable.
Selection between these alternatives depends on application current requirements and the necessity for active product availability versus parametric equivalence.
Frequently Asked Questions (FAQ)
Q: Can the 1N459A (Microchip Technology) directly replace the 1N459A_S00Z?
A: The 1N459A shares the same voltage rating and package but has a reduced current rating of 150 mA versus 500 mA. Direct replacement is possible only if the circuit operates at or below 150 mA average rectified current. Applications requiring the full 500 mA capability require the 1N459-T50R.
Q: What is the difference between the 1N459-T50R and the 1N459A_S00Z?
A: The 1N459-T50R is a parametric equivalent with identical electrical specifications: 200 V reverse voltage, 500 mA current rating, 1 V forward voltage, 25 nA reverse leakage, and 6 pF capacitance. Both parts are obsolete. The 1N459-T50R provides direct replacement without circuit modifications.
Q: Are all substitute parts available in the same DO-35 package?
A: Yes. All listed substitute parts are packaged in DO-204AH/DO-35 axial through-hole configuration, ensuring mechanical compatibility with existing PCB layouts and assembly processes.
Q: Does the higher reverse leakage current of the 1N459A (Microchip) affect circuit performance?
A: The 1N459A exhibits 1 µA reverse leakage at 200 V compared to 25 nA in the main part. This 40-fold increase may impact circuits with high impedance paths or precision analog applications. Circuit-level analysis is required to determine acceptability for specific designs.
Q: What compliance certifications apply to these substitute parts?
A: All listed parts carry REACH Unaffected status and EAR99 export classification. The 1N459A (Microchip) is RoHS non-compliant. The 1N459-T50R has RoHS status listed as not applicable. Compliance requirements for the target application must be verified against these designations.
Q: Can the 1N459A be used in high-temperature applications?
A: The 1N459A (Microchip) has a maximum junction temperature of 150°C, compared to 175°C for the main part and the 1N459-T50R. Applications requiring operation above 150°C require the 1N459-T50R or equivalent 175°C-rated alternatives.
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