1N457ATR Equivalent & Substitute Parts

Part Overview

The 1N457ATR is a general-purpose rectifier diode manufactured by onsemi, rated for 70 V DC reverse voltage and 200 mA average rectified current in a DO-35 through-hole package. This part is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement continuity. The 1N457ATR serves applications requiring small-signal rectification, switching, and general-purpose diode functions in legacy and new designs requiring compatible alternatives.

Key Parameters

Parameter	Value	Specification
Voltage - DC Reverse (Vr) (Max)	70 V	Maximum reverse voltage rating
Current - Average Rectified (Io)	200 mA	Maximum average forward current
Voltage - Forward (Vf) (Max) @ If	1 V @ 100 mA	Forward voltage drop at specified current
Current - Reverse Leakage @ Vr	25 nA @ 60 V	Reverse leakage current at rated voltage
Capacitance @ Vr, F	8 pF @ 0 V, 1 MHz	Junction capacitance at zero bias
Speed Classification	Small Signal ≤ 200 mA (Io), Any Speed	Switching speed category
Mounting Type	Through Hole	Physical mounting configuration
Package / Case	DO-204AH, DO-35, Axial	Physical package designation
Operating Temperature - Junction (Max)	175°C	Maximum junction temperature rating
Technology	Standard	Diode technology classification

Substitute Part Grouping Explanation

Substitute parts for the 1N457ATR are classified into two categories based on parametric equivalence and similarity:

Parametric Equivalents maintain all critical electrical specifications: 70 V reverse voltage rating, 200 mA average rectified current, 1 V forward voltage drop at 100 mA, 25 nA reverse leakage at 60 V, and 8 pF capacitance. These parts are direct functional replacements with identical performance characteristics.

Similar Parts share the same voltage and package specifications but differ in one or more secondary parameters. These parts are suitable for applications where the specific parameter variance does not impact circuit performance.

The key parameters determining substitution eligibility are:

Voltage - DC Reverse (Vr) (Max): 70 V minimum
Current - Average Rectified (Io): 200 mA minimum
Mounting Type: Through Hole
Package / Case: DO-35 or DO-204AH compatible
Speed Classification: Small Signal ≤ 200 mA

Parameter Comparison

Part Number	Manufacturer	Vr (Max)	Io (mA)	Vf @ If	Reverse Leakage @ Vr	Capacitance @ Vr	Package	Status
1N457ATR	onsemi	70 V	200	1 V @ 100 mA	25 nA @ 60 V	8 pF @ 0 V, 1 MHz	DO-35	Obsolete
1N457TR	Fairchild Semiconductor	70 V	200	1 V @ 20 mA	25 nA @ 60 V	8 pF @ 0 V, 1 MHz	DO-35	Active
1N457A	Microchip Technology	70 V	150	1 V @ 100 mA	1 µA @ 70 V	Not specified	DO-35	Active
1N5194	Microchip Technology	70 V	200	1 V @ 100 mA	25 nA @ 70 V	Not specified	DO-35	Active
BAS34-TAP	Vishay General Semiconductor - Diodes Division	60 V	200	1 V @ 100 mA	1 nA @ 30 V	3 pF @ 0 V, 1 MHz	DO-35	Active
JANTXV1N483B/TR	Microchip Technology	70 V	200	1 V @ 100 mA	25 nA @ 60 V	Not specified	DO-35	Active

Engineering Selection Recommendations

1N457TR (Fairchild Semiconductor) is a parametric equivalent suitable for direct replacement in all applications. This part maintains active product status and shares identical voltage, current, and capacitance specifications with the 1N457ATR. The forward voltage measurement point differs (20 mA versus 100 mA), but the maximum rating remains 1 V, ensuring compatibility.

1N5194 (Microchip Technology) is a parametric equivalent with active status. This part matches all critical electrical parameters including 70 V reverse voltage, 200 mA current rating, and 1 V forward voltage drop. The reverse leakage measurement is taken at 70 V rather than 60 V, providing equivalent or superior performance.

JANTXV1N483B/TR (Microchip Technology) is a parametric equivalent qualified to MIL-PRF-19500/118 military specifications. This part is suitable for applications requiring military-grade components and maintains all electrical equivalence to the 1N457ATR. ROHS3 compliance is provided.

1N457A (Microchip Technology) is a similar part with reduced current rating (150 mA versus 200 mA) and higher reverse leakage (1 µA versus 25 nA). This part is suitable only for applications where the 150 mA current rating is sufficient and leakage characteristics are not critical.

BAS34-TAP (Vishay General Semiconductor - Diodes Division) is a similar part with reduced reverse voltage rating (60 V versus 70 V). This part is suitable only for applications where the maximum reverse voltage does not exceed 60 V. The part offers automotive qualification (AEC-Q101) and ROHS3 compliance. Superior reverse leakage performance (1 nA) and lower capacitance (3 pF) are provided.

Frequently Asked Questions (FAQ)

Q: Can 1N457TR be used as a direct replacement for 1N457ATR?

A: Yes. The 1N457TR is a parametric equivalent with identical voltage (70 V), current (200 mA), and capacitance (8 pF) specifications. The part is manufactured by Fairchild Semiconductor and maintains active product status, ensuring long-term availability.

Q: What is the difference between 1N5194 and 1N457ATR?

A: The 1N5194 is a parametric equivalent with identical electrical specifications. The primary difference is manufacturer (Microchip Technology versus onsemi) and product status (active versus obsolete). The reverse leakage measurement point differs (70 V versus 60 V), but both parts meet the 25 nA specification at their respective measurement points.

Q: Is BAS34-TAP compatible with 1N457ATR?

A: BAS34-TAP is a similar part with a reduced reverse voltage rating of 60 V compared to the 1N457ATR's 70 V rating. This part is compatible only in applications where the maximum reverse voltage does not exceed 60 V. The part offers superior reverse leakage performance and automotive qualification.

Q: Can 1N457A replace 1N457ATR in all applications?

A: No. The 1N457A has a reduced current rating of 150 mA compared to the 1N457ATR's 200 mA rating. This part is suitable only for applications where the 150 mA current rating is sufficient. Additionally, reverse leakage is higher (1 µA versus 25 nA), which may impact performance in sensitive applications.

Q: What is the advantage of JANTXV1N483B/TR over other substitutes?

A: The JANTXV1N483B/TR is qualified to MIL-PRF-19500/118 military specifications and maintains parametric equivalence to the 1N457ATR. This part is suitable for applications requiring military-grade components and provides ROHS3 compliance.

Q: Are all substitute parts available in DO-35 package?

A: Yes. All substitute parts listed are available in DO-35 through-hole package configuration, ensuring mechanical and electrical compatibility with the 1N457ATR.

Q: What is the difference between DO-35 and DO-204AH designations?

A: DO-35 and DO-204AH refer to the same physical package. DO-204AH is the formal JEDEC designation, while DO-35 is the legacy designation. Both terms describe an axial-lead through-hole diode package.

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