1N4446 Equivalent & Substitute Parts

Part Overview

The 1N4446 is a general-purpose rectifier diode manufactured by onsemi, rated for 100 V DC reverse voltage and 200 mA average rectified current in a DO-35 through-hole package. The part is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement. The 1N4446 operates at a maximum junction temperature of 175°C and exhibits small-signal switching characteristics with a 4 ns reverse recovery time.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	100	V
Current - Average Rectified (Io)	200	mA
Voltage - Forward (Vf) (Max) @ If	1 V @ 20 mA	V
Reverse Recovery Time (trr)	4	ns
Current - Reverse Leakage @ Vr	25 nA @ 20 V	nA
Capacitance @ Vr, F	4	pF @ 0V, 1MHz
Mounting Type	Through Hole	—
Package / Case	DO-204AH, DO-35, Axial	—
Operating Temperature - Junction (Max)	175	°C
Technology	Standard	—
Speed Classification	Small Signal ≤ 200mA (Io), Any Speed	—

Substitute Part Grouping Explanation

Substitute parts for the 1N4446 are classified based on electrical and mechanical compatibility within the small-signal rectifier diode category. The primary substitution criteria are:

Electrical Parameters:

Voltage - DC Reverse (Vr) (Max): Must equal or exceed 100 V
Current - Average Rectified (Io): Must equal or exceed 200 mA
Reverse Recovery Time (trr): Must equal 4 ns
Speed Classification: Must be Small Signal ≤ 200mA (Io), Any Speed

Mechanical Parameters:

Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, or Axial configuration

Compliance Considerations:

Product Status: Active status preferred due to obsolescence of the original part
Operating Temperature Range: Must support maximum junction temperature of 175°C or higher

Parts meeting all electrical and mechanical criteria are classified as direct substitutes. Parts with reduced voltage ratings (75 V or 50 V) are listed as functional alternatives where application voltage requirements permit.

Parameter Comparison

Part Number	Manufacturer	Vr (Max) [V]	Io [mA]	Vf (Max) @ If [V]	trr [ns]	Tj (Max) [°C]	Product Status	Package
1N4446	onsemi	100	200	1 @ 20 mA	4	175	Obsolete	DO-35
1N4148TR	Fairchild Semiconductor	100	200	1 @ 10 mA	4	175	Active	DO-35
1N4148-T50A	Fairchild Semiconductor	100	200	1 @ 10 mA	4	175	Active	DO-35
1N914B	Taiwan Semiconductor Corporation	100	150	1 @ 100 mA	4	150	Active	DO-35
1N4446 (Microchip)	Microchip Technology	75	200	1 @ 20 mA	4	150	Active	DO-35
1N4454	Microchip Technology	75	200	1 @ 10 mA	4	175	Active	DO-35
1N4454-1	Microchip Technology	75	200	1 @ 10 mA	4	175	Active	DO-35
1N4447	Microchip Technology	75	200	1 @ 20 mA	4	150	Active	DO-35
1N4149	Microchip Technology	75	200	1 @ 10 mA	4	150	Active	DO-35
1N4150-1	Microchip Technology	50	200	1 @ 200 mA	4	175	Active	DO-35

Engineering Selection Recommendations

Direct Substitutes (100 V Rating, 200 mA Current):

The 1N4148TR and 1N4148-T50A from Fairchild Semiconductor are direct electrical and mechanical substitutes for the 1N4446. Both parts maintain the 100 V reverse voltage rating and 200 mA average rectified current specification. Both are classified as Active products, ensuring long-term availability and supply chain stability. The 1N4148TR supports a maximum junction temperature of 175°C, matching the original specification. The 1N4148-T50A also operates at 175°C maximum junction temperature. Both parts are packaged in DO-35 through-hole configuration and exhibit identical 4 ns reverse recovery time.

Functional Alternatives (75 V Rating, 200 mA Current):

The 1N4446 from Microchip Technology, 1N4454, 1N4454-1, 1N4447, and 1N4149 are functional alternatives where application voltage requirements do not exceed 75 V. These parts maintain the 200 mA average rectified current rating and 4 ns reverse recovery time. The 1N4454 and 1N4454-1 support maximum junction temperatures of 175°C. The 1N4447 and 1N4149 operate at 150°C maximum junction temperature. All are Active products in DO-35 through-hole packages.

Limited Current Alternative (100 V Rating, 150 mA Current):

The 1N914B from Taiwan Semiconductor Corporation provides 100 V reverse voltage rating but is limited to 150 mA average rectified current. This part is suitable only for applications where the current requirement does not exceed 150 mA. The 1N914B is classified as Active and ROHS3 Compliant. Maximum junction temperature is 150°C.

Reduced Voltage Alternative (50 V Rating, 200 mA Current):

The 1N4150-1 from Microchip Technology is suitable for applications with maximum voltage requirements of 50 V. It maintains the 200 mA average rectified current and 4 ns reverse recovery time. Maximum junction temperature is 175°C. This part is Active and available in DO-35 through-hole packaging.

Frequently Asked Questions (FAQ)

Q: Can the 1N4148TR directly replace the 1N4446?

A: Yes. The 1N4148TR meets all electrical specifications: 100 V reverse voltage, 200 mA average rectified current, 4 ns reverse recovery time, and 175°C maximum junction temperature. Both are packaged in DO-35 through-hole configuration. The 1N4148TR is an Active product, providing supply continuity for the obsolete 1N4446.

Q: What is the difference between the 1N4446 from onsemi and the 1N4446 from Microchip Technology?

A: The onsemi 1N4446 is rated for 100 V reverse voltage and is classified as Obsolete. The Microchip Technology 1N4446 is rated for 75 V reverse voltage and is classified as Active. These are distinct parts with different electrical ratings. The Microchip part is suitable only for applications with maximum voltage requirements of 75 V.

Q: Can I use a 75 V rated diode in place of the 100 V rated 1N4446?

A: A 75 V rated diode can be used only if the application circuit operates at voltages not exceeding 75 V. Using a 75 V rated part in a circuit designed for 100 V operation will result in diode failure. Verify application voltage requirements before selecting a lower-voltage substitute.

Q: What is the significance of the 1N4148-T50A designation?

A: The 1N4148-T50A is a variant of the 1N4148 base part number, manufactured by Fairchild Semiconductor in bulk packaging. It maintains identical electrical specifications to the 1N4148TR: 100 V reverse voltage, 200 mA average rectified current, and 175°C maximum junction temperature. Both are suitable direct substitutes for the 1N4446.

Q: Are all substitute parts available in the same DO-35 package?

A: Yes. All listed substitute parts are packaged in DO-35 through-hole configuration (DO-204AH, DO-35, Axial). This ensures mechanical compatibility with existing PCB designs and component placement equipment.

Q: What is the reverse recovery time, and why is it important for substitution?

A: Reverse recovery time (trr) is the time required for a diode to switch from forward conduction to reverse blocking. All listed substitutes maintain the 4 ns reverse recovery time of the original 1N4446, ensuring equivalent switching performance in high-frequency applications.

Q: Does the 1N914B have any limitations compared to the 1N4446?

A: Yes. The 1N914B is limited to 150 mA average rectified current, compared to the 1N4446 specification of 200 mA. The 1N914B is suitable only for applications where current requirements do not exceed 150 mA. Additionally, the maximum junction temperature is 150°C, compared to 175°C for the 1N4446.

Q: What compliance certifications should I verify for substitute parts?

A: Verify REACH status, RoHS compliance, and ECCN classification according to your application requirements and regional regulations. All listed parts are REACH Unaffected and classified as EAR99. RoHS compliance varies by manufacturer and part variant; consult specific datasheets for compliance requirements.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message