1N4154 Equivalent & Substitute Parts

Part Overview

The 1N4154 is a general-purpose small-signal diode manufactured by onsemi, rated for 35 V DC reverse voltage and 100 mA average rectified current in a DO-35 through-hole package. This component is classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support and procurement continuity. Substitute parts must maintain electrical compatibility within the specified voltage, current, and thermal operating parameters while accommodating available packaging and product status options.

Substiute Parts

1N4154
onsemiIn Stock: 11711N4154 Datasheet
1N4154
Current Part
1N4448TR
Vishay General Semiconductor - Diodes DivisionIn Stock: 199461N4448TR Datasheet
1N4448TR
Similar
1N4154TR
onsemiIn Stock: 10201N4154TR Datasheet
1N4154TR
Similar

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 35 V
Current - Average Rectified (Io) 100 mA
Voltage - Forward (Vf) (Max) @ If 1 V @ 30 mA V
Reverse Recovery Time (trr) 4 ns
Current - Reverse Leakage @ Vr 100 nA @ 25 V nA
Capacitance @ Vr, F 4 pF @ 0V, 1MHz
Operating Temperature - Junction (Max) 175 °C
Package / Case DO-204AH, DO-35, Axial
Mounting Type Through Hole
Technology Standard

Substitute Part Grouping Explanation

Substitution eligibility for the 1N4154 is determined by the following critical parameters:

Voltage Rating Compatibility: The substitute part must support a DC reverse voltage (Vr) equal to or greater than 35 V to ensure safe operation in circuits designed for the 1N4154.

Current Rating Compatibility: The substitute part must support an average rectified current (Io) equal to or greater than 100 mA to handle the intended load without exceeding thermal or electrical limits.

Package and Mounting Compatibility: The substitute part must use through-hole mounting in a DO-35 or equivalent DO-204AH axial package to ensure mechanical fit and assembly compatibility.

Speed Classification: The substitute part must operate within the small-signal diode category (Io ≤ 200 mA) to maintain consistent switching characteristics.

Thermal Rating: The substitute part must support a maximum junction temperature of 175°C or higher to match the thermal operating envelope.

The 1N4154 is obsolete; therefore, substitute parts with active product status are preferred for new procurement. Parts with identical electrical specifications but different packaging formats or product status are listed as direct equivalents.

Parameter Comparison

Parameter 1N4154 1N4154TR 1N4448TR
Manufacturer onsemi onsemi Vishay General Semiconductor - Diodes Division
Product Status Obsolete Obsolete Active
Voltage - DC Reverse (Vr) (Max) 35 V 35 V 100 V
Current - Average Rectified (Io) 100 mA 100 mA 150 mA
Voltage - Forward (Vf) (Max) @ If 1 V @ 30 mA 1 V @ 30 mA 1 V @ 100 mA
Reverse Recovery Time (trr) 4 ns 4 ns 8 ns
Current - Reverse Leakage @ Vr 100 nA @ 25 V 100 nA @ 25 V 5 µA @ 75 V
Capacitance @ Vr, F 4 pF @ 0V, 1MHz 4 pF @ 0V, 1MHz 4 pF @ 0V, 1MHz
Operating Temperature - Junction (Max) 175°C 175°C 175°C
Package / Case DO-204AH, DO-35, Axial DO-204AH, DO-35, Axial DO-204AH, DO-35, Axial
Mounting Type Through Hole Through Hole Through Hole
Technology Standard Standard Standard
REACH Status REACH Unaffected REACH Unaffected REACH Unaffected
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

1N4154TR (onsemi): This part is electrically and mechanically identical to the 1N4154, with matching voltage, current, and thermal specifications. Both parts are classified as obsolete. The 1N4154TR is suitable for direct replacement in existing designs where the 1N4154 is specified, provided that procurement availability is confirmed. No circuit redesign is required.

1N4448TR (Vishay General Semiconductor - Diodes Division): This part exceeds the electrical requirements of the 1N4154 in voltage rating (100 V vs. 35 V) and current capacity (150 mA vs. 100 mA). The 1N4448TR is classified as active product status, making it the preferred choice for new designs and long-term procurement continuity. The higher voltage and current ratings provide design margin without compromising package compatibility or thermal performance. The reverse recovery time is longer (8 ns vs. 4 ns), which may affect high-frequency switching applications but remains within the small-signal diode classification. The 1N4448TR is RoHS3 compliant, providing additional regulatory compliance assurance.

For obsolete part replacement, the 1N4448TR is the recommended substitute due to active product status and superior electrical ratings. For direct form-fit-function replacement, the 1N4154TR maintains identical specifications.

Frequently Asked Questions (FAQ)

Q: Can the 1N4448TR be used as a direct replacement for the 1N4154?

A: Yes. The 1N4448TR is mechanically and electrically compatible with the 1N4154. Both parts use the DO-35 through-hole package and share identical thermal ratings. The 1N4448TR exceeds the voltage and current specifications of the 1N4154, ensuring safe operation in circuits designed for the original part. No circuit modifications are required.

Q: What is the difference between the 1N4154 and 1N4154TR?

A: The 1N4154 and 1N4154TR are electrically identical. Both are manufactured by onsemi with the same voltage (35 V), current (100 mA), and thermal specifications. Both are classified as obsolete. The primary difference is packaging format; however, both use the DO-35 through-hole package. These parts are interchangeable.

Q: Why is the 1N4448TR recommended over the 1N4154TR?

A: The 1N4448TR is classified as active product status, whereas both the 1N4154 and 1N4154TR are obsolete. Active product status ensures long-term availability, consistent manufacturing, and ongoing supplier support. The 1N4448TR also provides higher voltage (100 V) and current (150 mA) ratings, offering additional design margin. For new designs and long-term procurement, the 1N4448TR is the preferred choice.

Q: Does the higher reverse recovery time of the 1N4448TR (8 ns vs. 4 ns) affect circuit performance?

A: The reverse recovery time difference is relevant only in high-frequency switching applications. Both the 1N4154 and 1N4448TR are classified as small-signal diodes with recovery times suitable for general-purpose rectification and signal detection. For applications operating below 200 mA, the 8 ns recovery time of the 1N4448TR is acceptable. Applications requiring faster switching should evaluate the specific circuit frequency and switching requirements.

Q: Are all substitute parts available in the same package?

A: Yes. The 1N4154, 1N4154TR, and 1N4448TR all use the DO-35 through-hole axial package (DO-204AH). Mechanical fit and assembly compatibility are maintained across all three parts.

Q: What compliance certifications apply to these parts?

A: All three parts are REACH Unaffected and carry Moisture Sensitivity Level (MSL) 1 (Unlimited). The 1N4448TR is additionally RoHS3 compliant, providing enhanced regulatory alignment for new designs.

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