1N4153 Equivalent & Substitute Parts

Part Overview

The 1N4153 is a general-purpose rectifier diode manufactured by onsemi, rated for 75 V DC reverse voltage and 200 mA average rectified current in a DO-35 through-hole package. This part is classified as obsolete, making equivalent and substitute parts necessary for new designs and ongoing production requirements. The 1N4153 operates as a small-signal diode with fast switching characteristics suitable for general rectification and signal detection applications.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	75	V
Current - Average Rectified (Io)	200	mA
Voltage - Forward (Vf) (Max) @ If	880 mV @ 20 mA	mV @ mA
Reverse Recovery Time (trr)	4	ns
Current - Reverse Leakage @ Vr	50 nA @ 50 V	nA @ V
Capacitance @ Vr, F	2 pF @ 0V, 1MHz	pF
Mounting Type	Through Hole	—
Package / Case	DO-204AH, DO-35, Axial	—
Operating Temperature - Junction (Max)	175	°C
Speed Classification	Small Signal ≤ 200mA (Io), Any Speed	—

Substitute Part Grouping Explanation

Substitution of the 1N4153 is determined by compatibility across the following critical parameters:

Voltage Rating Compatibility: Substitute parts must have a DC reverse voltage rating (Vr) equal to or greater than 75 V to maintain circuit protection and reliability margins.

Current Rating Compatibility: Substitute parts must support an average rectified current (Io) equal to or greater than 200 mA to handle the intended load without thermal stress.

Package Compatibility: All substitute parts must use the DO-35 through-hole package (DO-204AH designation) to ensure mechanical and electrical compatibility with existing PCB layouts and assembly processes.

Speed Classification: Substitute parts must operate within the small-signal diode category (≤ 200 mA) to maintain switching performance characteristics.

Temperature Rating: Substitute parts must support a maximum junction temperature of 175°C or higher to ensure operation across the full intended temperature range.

The following substitute parts are grouped based on these criteria:

Group 1 - Direct Voltage/Current Upgrade: 1N4448TR (100 V / 150 mA) and BAW27-TR (60 V / 600 mA) provide higher voltage or current ratings while maintaining package compatibility.

Group 2 - Reduced Voltage Rating: 1N4153-1 (50 V / 150 mA) and 1N457A (70 V / 150 mA) operate at lower voltage ratings and reduced current capacity, suitable only for applications with lower voltage requirements.

Parameter Comparison

Parameter	1N4153 (Main)	1N4448TR	1N4153-1	1N457A	BAW27-TR
Manufacturer	onsemi	Vishay General Semiconductor - Diodes Division	Microchip Technology	Microchip Technology	Vishay General Semiconductor - Diodes Division
Product Status	Obsolete	Active	Active	Active	Active
Voltage - DC Reverse (Vr) (Max)	75 V	100 V	50 V	70 V	60 V
Current - Average Rectified (Io)	200 mA	150 mA	150 mA	150 mA	600 mA
Voltage - Forward (Vf) (Max) @ If	880 mV @ 20 mA	1 V @ 100 mA	880 mV @ 20 mA	1 V @ 100 mA	1.25 V @ 400 mA
Reverse Recovery Time (trr)	4 ns	8 ns	4 ns	Not specified	6 ns
Current - Reverse Leakage @ Vr	50 nA @ 50 V	5 µA @ 75 V	50 nA @ 50 V	1 µA @ 70 V	100 nA @ 60 V
Capacitance @ Vr, F	2 pF @ 0V, 1MHz	4 pF @ 0V, 1MHz	Not specified	Not specified	4 pF @ 0V, 1MHz
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	DO-204AH, DO-35, Axial	DO-204AH, DO-35, Axial	DO-204AH, DO-35, Axial	DO-204AH, DO-35, Axial	DO-204AH, DO-35, Axial
Operating Temperature - Junction (Max)	175°C	175°C	175°C	150°C	175°C
Speed Classification	Small Signal ≤ 200mA (Io), Any Speed	Small Signal ≤ 200mA (Io), Any Speed	Small Signal ≤ 200mA (Io), Any Speed	Small Signal ≤ 200mA (Io), Any Speed	Fast Recovery ≤ 500ns, > 200mA (Io)
RoHS Status	Not specified	ROHS3 Compliant	RoHS non-compliant	RoHS non-compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

1N4448TR (Vishay): This part is the preferred substitute for new designs. It provides a higher voltage rating (100 V) than the 1N4153, ensuring adequate safety margin in circuits rated for 75 V operation. Although the current rating is reduced to 150 mA, this remains within acceptable limits for most applications. The part is active, ROHS3 compliant, and available in high volume (19,900 pcs in stock). The slightly longer reverse recovery time (8 ns vs. 4 ns) is acceptable for general-purpose rectification.

1N4153-1 (Microchip): This part shares identical forward voltage characteristics (880 mV @ 20 mA) and reverse recovery time (4 ns) with the 1N4153. However, the reduced voltage rating (50 V) limits its use to applications with lower voltage requirements. The part is active but RoHS non-compliant. Use only when circuit voltage requirements do not exceed 50 V.

1N457A (Microchip): This part provides a voltage rating (70 V) close to the original 1N4153 (75 V) and maintains the small-signal classification. However, the current rating is reduced to 150 mA, and the maximum junction temperature is limited to 150°C. The part is active but RoHS non-compliant. Use only when voltage requirements are below 75 V and temperature operation does not exceed 150°C.

BAW27-TR (Vishay): This part is classified as fast recovery (trr = 6 ns) rather than small-signal, and operates at a reduced voltage rating (60 V). The significantly higher current rating (600 mA) makes it unsuitable as a direct substitute for the 1N4153 in small-signal applications. The part is active and ROHS3 compliant but is qualified to AEC-Q101 automotive standards. Use only in applications requiring higher current capacity and fast recovery characteristics.

Frequently Asked Questions (FAQ)

Q: Can the 1N4448TR directly replace the 1N4153 in all applications?

A: The 1N4448TR is compatible with applications designed for the 1N4153 when the circuit voltage does not exceed 100 V and current does not exceed 150 mA. The higher voltage rating provides additional safety margin. The slightly longer reverse recovery time (8 ns vs. 4 ns) does not affect general-purpose rectification performance.

Q: Why is the 1N4153-1 not recommended as a primary substitute?

A: The 1N4153-1 has a reduced voltage rating (50 V) compared to the 1N4153 (75 V). It is suitable only for circuits designed to operate at 50 V or lower. Additionally, the part is RoHS non-compliant, which may conflict with modern procurement requirements.

Q: What is the difference between the 1N457A and the 1N4153?

A: The 1N457A operates at 70 V (compared to 75 V for the 1N4153) and has a reduced current rating of 150 mA (compared to 200 mA). The maximum junction temperature is also limited to 150°C instead of 175°C. The 1N457A is suitable only for applications with lower voltage and temperature requirements.

Q: Is the BAW27-TR a suitable substitute for the 1N4153?

A: The BAW27-TR is not a direct substitute. Although it shares the DO-35 package, it is classified as a fast recovery diode (trr = 6 ns) rather than a small-signal diode, and operates at a lower voltage rating (60 V). The significantly higher current rating (600 mA) indicates it is designed for different application requirements. Use the BAW27-TR only when fast recovery and higher current capacity are required.

Q: Are all substitute parts available in the same DO-35 package?

A: Yes. All substitute parts listed (1N4448TR, 1N4153-1, 1N457A, and BAW27-TR) are available in the DO-204AH (DO-35) through-hole axial package, ensuring mechanical compatibility with existing PCB layouts.

Q: Which substitute part has the best compliance status?

A: Both 1N4448TR and BAW27-TR are ROHS3 compliant and active products. The 1N4153-1 and 1N457A are RoHS non-compliant. For new designs requiring modern compliance standards, 1N4448TR is the recommended choice.

Q: What is the inventory status of substitute parts?

A: 1N4448TR has 19,900 pcs in stock, 1N4153-1 has 1,801 pcs, 1N457A has 1,069 pcs, and BAW27-TR has 52,777 pcs in stock. The original 1N4153 has 646 pcs available but is obsolete.

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