1N4152 Equivalent & Substitute Parts

Part Overview

The 1N4152 is a general-purpose small signal diode manufactured by onsemi, rated for 40 V DC reverse voltage and 200 mA average rectified current in a DO-35 through-hole package. This component is classified as obsolete, indicating discontinued production and limited availability from original sources. Identification of equivalent substitute parts is necessary to maintain design continuity and ensure procurement of functionally compatible alternatives from active product lines.

Substiute Parts

1N4152
onsemiIn Stock: 9641N4152 Datasheet
1N4152
Current Part
BAS33-TAP
Vishay General Semiconductor - Diodes DivisionIn Stock: 26329BAS33-TAP Datasheet
BAS33-TAP
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Key Parameters

Parameter Value
Voltage - DC Reverse (Vr) (Max) 40 V
Current - Average Rectified (Io) 200 mA
Voltage - Forward (Vf) (Max) @ If 880 mV @ 20 mA
Reverse Recovery Time (trr) 4 ns
Current - Reverse Leakage @ Vr 50 nA @ 30 V
Capacitance @ Vr, F 2 pF @ 0V, 1MHz
Mounting Type Through Hole
Package / Case DO-204AH, DO-35, Axial
Operating Temperature - Junction (Max) 175°C
Speed Classification Small Signal ≤ 200mA (Io), Any Speed

Substitute Part Grouping Explanation

Substitution of the 1N4152 with the BAS33-TAP is based on electrical and mechanical parameter compatibility within the small signal diode category. The substitute part maintains the same current rating (200 mA average rectified current), identical mounting type (through-hole), and compatible package format (DO-35/DO-204AH axial configuration). Both components operate at the same maximum junction temperature (175°C) and share identical speed classification (small signal, any speed).

The BAS33-TAP operates at a reduced maximum reverse voltage rating of 30 V compared to the 1N4152's 40 V specification. This represents a voltage derating that requires circuit-level verification to confirm compatibility with the intended application. The substitute part is currently in active production status with automotive-grade qualification (AEC-Q101) and RoHS3 compliance, providing superior supply chain availability and regulatory alignment compared to the obsolete 1N4152.

Parameter Comparison

Parameter 1N4152 (onsemi) BAS33-TAP (Vishay) Notes
Voltage - DC Reverse (Vr) (Max) 40 V 30 V Substitute rated 10 V lower
Current - Average Rectified (Io) 200 mA 200 mA Identical rating
Voltage - Forward (Vf) (Max) @ If 880 mV @ 20 mA 1 V @ 100 mA Different test conditions; not directly comparable
Reverse Recovery Time (trr) 4 ns Not specified Parameter not provided for substitute
Current - Reverse Leakage @ Vr 50 nA @ 30 V 1 nA @ 15 V Different test conditions; not directly comparable
Capacitance @ Vr, F 2 pF @ 0V, 1MHz 3 pF @ 0V, 1MHz Substitute 1 pF higher
Mounting Type Through Hole Through Hole Identical
Package / Case DO-204AH, DO-35, Axial DO-204AH, DO-35, Axial Identical package format
Operating Temperature - Junction (Max) 175°C 175°C Identical rating
Product Status Obsolete Active Substitute in active production

Engineering Selection Recommendations

The BAS33-TAP serves as a functional substitute for the 1N4152 in applications where the reduced maximum reverse voltage rating of 30 V is acceptable within circuit design margins. The substitute part's active product status ensures ongoing availability and supply chain reliability, contrasting with the 1N4152's obsolete classification.

The BAS33-TAP carries automotive-grade qualification (AEC-Q101) and RoHS3 compliance, providing enhanced regulatory alignment for applications subject to automotive or environmental standards. The 1N4152 carries no specified automotive qualification or RoHS status.

Selection of the BAS33-TAP requires confirmation that circuit operating conditions maintain reverse voltage stress below 30 V under all normal and fault conditions. The identical current rating, package format, and junction temperature rating support direct mechanical and thermal compatibility.

Frequently Asked Questions (FAQ)

Q: Can the BAS33-TAP directly replace the 1N4152 in all applications?

A: Direct replacement is limited by the BAS33-TAP's 30 V maximum reverse voltage rating versus the 1N4152's 40 V rating. Substitution is valid only in circuits where reverse voltage stress remains below 30 V under all operating and fault conditions.

Q: Are the DO-35 packages physically identical between the two parts?

A: Both parts use the DO-204AH (DO-35) axial through-hole package format. Physical dimensions and lead spacing are compatible for direct board-level substitution without layout modification.

Q: What is the significance of the BAS33-TAP's AEC-Q101 qualification?

A: AEC-Q101 qualification indicates the part meets automotive industry reliability and quality standards. This certification is relevant only if the application requires automotive-grade components; it does not affect electrical performance in non-automotive circuits.

Q: How do the forward voltage characteristics compare?

A: The 1N4152 specifies 880 mV maximum at 20 mA, while the BAS33-TAP specifies 1 V maximum at 100 mA. These measurements occur at different current levels and cannot be directly compared. Forward voltage performance depends on actual operating current in the specific circuit.

Q: Is the BAS33-TAP's higher capacitance (3 pF vs. 2 pF) significant?

A: The 1 pF difference in junction capacitance is negligible for most general-purpose applications. Significance depends on circuit frequency response requirements; high-frequency switching circuits may require detailed analysis.

Q: Why is the 1N4152 classified as obsolete?

A: Obsolete status indicates onsemi has discontinued production. The BAS33-TAP's active status ensures continued manufacturing and supply availability for new designs and production requirements.

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