1N4151 Equivalent & Substitute Parts

Part Overview

The 1N4151 is a small signal rectifier diode manufactured by onsemi in the DO-35 package, rated for 75 V reverse voltage and 150 mA average rectified current. The device is classified as obsolete, indicating discontinued production and limited availability. Equivalent and substitute parts are necessary to maintain design continuity and ensure component procurement for new production runs or field replacements where the original part is no longer obtainable.

Substiute Parts

1N4151
onsemiIn Stock: 20201N4151 Datasheet
1N4151
Current Part
1N4148
Taiwan Semiconductor CorporationIn Stock: 2125851N4148 Datasheet
1N4148
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1N4448
Microchip TechnologyIn Stock: 502361N4448 Datasheet
1N4448
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1N4454
Microchip TechnologyIn Stock: 103971N4454 Datasheet
1N4454
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1N4148-G
Comchip TechnologyIn Stock: 222861N4148-G Datasheet
1N4148-G
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1N4149
Microchip TechnologyIn Stock: 8871N4149 Datasheet
1N4149
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1N4151TR
Vishay General Semiconductor - Diodes DivisionIn Stock: 65171N4151TR Datasheet
1N4151TR
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1N4153-1
Microchip TechnologyIn Stock: 18391N4153-1 Datasheet
1N4153-1
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1N4446
Microchip TechnologyIn Stock: 239891N4446 Datasheet
1N4446
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1N4447
Microchip TechnologyIn Stock: 12381N4447 Datasheet
1N4447
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1N4454
Microchip TechnologyIn Stock: 103971N4454 Datasheet
1N4454
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Key Parameters

Parameter Value
Voltage - DC Reverse (Vr) (Max) 75 V
Current - Average Rectified (Io) 150 mA
Voltage - Forward (Vf) (Max) @ If 1 V @ 50 mA
Reverse Recovery Time (trr) 4 ns
Current - Reverse Leakage @ Vr 50 nA @ 50 V
Capacitance @ Vr, F 2 pF @ 0V, 1MHz
Mounting Type Through Hole
Package / Case DO-204AH, DO-35, Axial
Operating Temperature - Junction (Max) 175°C
Technology Standard
Speed Classification Small Signal ≤ 200mA (Io), Any Speed

Substitute Part Grouping Explanation

Substitution of the 1N4151 is determined by electrical and mechanical compatibility within the following criteria:

Primary Substitution Criteria:

  • Voltage - DC Reverse (Vr) (Max): Must equal or exceed 75 V
  • Current - Average Rectified (Io): Must equal or exceed 150 mA
  • Reverse Recovery Time (trr): Must equal 4 ns
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial

Secondary Compatibility Factors:

  • Forward voltage characteristics at specified current levels
  • Reverse leakage current performance
  • Operating temperature range
  • Product status and availability

Substitute parts are grouped into two categories:

Category A - Direct Electrical Equivalents (75 V, 150 mA): Parts matching the exact voltage and current ratings of the 1N4151, maintaining identical electrical performance envelope.

Category B - Enhanced Performance Substitutes (75 V, 200 mA or Higher Voltage): Parts with equal or higher voltage ratings and current capacity, providing superior performance margins while maintaining backward compatibility with the original design.

Parameter Comparison

Part Number Manufacturer Vr (Max) Io (mA) Vf (Max) @ If trr (ns) Ir @ Vr Package Temp (Max) Product Status
1N4151 onsemi 75 V 150 1 V @ 50 mA 4 50 nA @ 50 V DO-35 175°C Obsolete
1N4151TR Vishay General Semiconductor 75 V 150 1 V @ 50 mA 4 50 nA @ 50 V DO-35 175°C Active
1N4148-G Comchip Technology 75 V 150 1 V @ 10 mA 4 5 µA @ 75 V DO-35 200°C Obsolete
1N4153-1 Microchip Technology 50 V 150 880 mV @ 20 mA 4 50 nA @ 50 V DO-35 175°C Active
1N4148 Taiwan Semiconductor Corporation 100 V 150 1 V @ 10 mA 4 5 µA @ 75 V DO-35 150°C Active
1N4448 Microchip Technology 75 V 200 1 V @ 100 mA 4 25 nA @ 20 V DO-35 150°C Discontinued
1N4446 Microchip Technology 75 V 200 1 V @ 20 mA 4 25 nA @ 20 V DO-35 150°C Active
1N4447 Microchip Technology 75 V 200 1 V @ 20 mA 4 25 nA @ 20 V DO-35 150°C Active
1N4149 Microchip Technology 75 V 200 1 V @ 10 mA 4 20 nA @ 20 V DO-35 150°C Active
1N4454 Microchip Technology 75 V 200 1 V @ 10 mA 4 100 nA @ 50 V DO-35 175°C Active

Engineering Selection Recommendations

Recommended Primary Substitute: 1N4151TR

The 1N4151TR manufactured by Vishay General Semiconductor is the direct functional equivalent of the 1N4151. This part maintains identical electrical specifications including 75 V reverse voltage, 150 mA average rectified current, 1 V forward voltage at 50 mA, and 175°C maximum junction temperature. The 1N4151TR is currently in active production status with RoHS3 compliance certification, ensuring long-term availability and regulatory compliance for new designs. This part is supplied in Cut Tape packaging and is the preferred replacement for direct substitution.

Alternative Substitutes for Enhanced Performance Applications:

The 1N4446, 1N4447, and 1N4454 are active production alternatives rated for 75 V reverse voltage with 200 mA average rectified current capacity. These parts provide 33% higher current handling capability while maintaining the same voltage rating. The 1N4454 offers the additional advantage of 175°C maximum junction temperature matching the original 1N4151 specification. These parts are suitable for applications where increased current margin is beneficial.

The 1N4148 manufactured by Taiwan Semiconductor Corporation provides 100 V reverse voltage rating with 150 mA current capacity and is in active production status with RoHS3 compliance. This part is appropriate for applications requiring higher voltage margin than the original 75 V specification.

Parts Not Recommended for Direct Substitution:

The 1N4153-1 is rated for only 50 V reverse voltage, which is below the 75 V requirement of the 1N4151 and is unsuitable for direct substitution. The 1N4148-G and 1N4448 are classified as obsolete or discontinued, limiting their availability for new procurement.

Frequently Asked Questions (FAQ)

Q: Can the 1N4151TR be used as a direct replacement for the 1N4151?

A: Yes. The 1N4151TR is electrically and mechanically identical to the 1N4151, with matching voltage ratings (75 V), current capacity (150 mA), forward voltage characteristics, and maximum junction temperature (175°C). Both parts use the DO-35 package with axial through-hole mounting. The 1N4151TR is currently in active production, making it the recommended substitute.

Q: What is the difference between the 1N4151 and the 1N4446/1N4447/1N4454?

A: The primary difference is current capacity. The 1N4151 is rated for 150 mA average rectified current, while the 1N4446, 1N4447, and 1N4454 are rated for 200 mA. All four parts share the same 75 V reverse voltage rating and DO-35 package. The 1N4454 additionally matches the 175°C maximum junction temperature of the original 1N4151. These higher-current parts are suitable substitutes when the application can tolerate increased current capacity.

Q: Why is the 1N4153-1 not recommended as a substitute?

A: The 1N4153-1 is rated for only 50 V reverse voltage, which is 25 V below the 1N4151 specification of 75 V. Using a lower-voltage diode in a circuit designed for 75 V operation creates risk of device failure and circuit malfunction. The 1N4153-1 is not a valid substitute.

Q: Are all substitute parts available in the same DO-35 package?

A: Yes. All substitute parts listed in this reference are manufactured in the DO-204AH (DO-35) package with axial through-hole mounting configuration, ensuring mechanical compatibility with the original 1N4151 footprint and board layout.

Q: What is the significance of product status (Active, Obsolete, Discontinued)?

A: Product status indicates manufacturing and availability status. Active parts are in current production with assured long-term supply. Obsolete parts are no longer manufactured and have limited remaining inventory. Discontinued parts have been removed from production but may have residual stock. For new designs and long-term procurement, active status parts are preferred.

Q: Does the 1N4148 provide better performance than the 1N4151?

A: The 1N4148 provides higher voltage rating (100 V versus 75 V) and is in active production with RoHS3 compliance. However, the 1N4148 has a lower maximum junction temperature (150°C versus 175°C) and different reverse leakage characteristics (5 µA @ 75 V versus 50 nA @ 50 V). The 1N4148 is suitable for applications requiring higher voltage margin but may not be appropriate for high-temperature environments.

Q: Can substitute parts with higher current ratings (200 mA) be used in circuits designed for 150 mA diodes?

A: Yes. Parts with higher current ratings are backward compatible with lower-current designs. A 200 mA rated diode can be used in a circuit designed for 150 mA operation, as the higher rating provides additional safety margin. The circuit will operate within the electrical specifications of the substitute part.

Q: What compliance certifications should be verified for new procurement?

A: For new designs, RoHS3 compliance and REACH compliance status should be verified. The 1N4151TR carries RoHS3 certification, indicating compliance with hazardous substance restrictions. All listed substitute parts carry REACH Unaffected status, indicating no regulatory restrictions under REACH regulations.

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