1N4007 Equivalent & Substitute Parts

Part Overview

The 1N4007 is a general-purpose rectifier diode rated for 1000 V DC reverse voltage and 1 A average rectified current in a through-hole DO-41 axial package. This standard recovery diode is designed for general rectification applications across industrial, consumer, and commercial equipment. The main part (onsemi 1N4007) is discontinued at DiGi Electronics, necessitating identification of equivalent and substitute components that maintain electrical and mechanical compatibility for ongoing production and repair applications.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	1000	V
Current - Average Rectified (Io)	1	A
Voltage - Forward (Vf) (Max) @ If	1.1	V @ 1 A
Speed	Standard Recovery >500ns, > 200mA (Io)	—
Current - Reverse Leakage @ Vr	10	µA @ 1000 V
Mounting Type	Through Hole	—
Package / Case	DO-204AL, DO-41, Axial	—
Operating Temperature - Junction	-55 to 175	°C
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the 1N4007 is determined by the following critical parameters:

Electrical Compatibility Requirements:

Voltage - DC Reverse (Vr) must equal or exceed 1000 V
Current - Average Rectified (Io) must equal or exceed 1 A
Forward voltage (Vf) characteristics must be compatible with circuit design
Recovery speed classification (Standard or Fast Recovery) affects switching behavior

Mechanical Compatibility Requirements:

Mounting type must be Through Hole
Package must be DO-41, DO-204AL, or Axial configuration
Physical dimensions must fit existing PCB layouts and component spacing

Compliance & Status Requirements:

RoHS3 compliance required for new designs
Product status affects suitability for new designs versus legacy support

Substitute parts are grouped into two categories:

Direct Equivalents: Parts with identical electrical ratings (1000 V, 1 A) and standard recovery characteristics, maintaining full functional interchangeability.

Similar Alternatives: Parts with matching voltage and current ratings but different recovery speeds (Fast Recovery), or parts with lower voltage ratings (800 V) suitable only for applications with reduced voltage requirements.

Parameter Comparison

Part Number	Manufacturer	Vr (Max) V	Io (A)	Vf (Max) @ If (V)	Speed	Package	Temp Range (°C)	Product Status
1N4007	onsemi	1000	1	1.1 @ 1 A	Standard Recovery >500ns	DO-41	-55 to 175	Discontinued
1N4007G	Taiwan Semiconductor Corporation	1000	1	1.0 @ 1 A	Standard Recovery >500ns	DO-204AL (DO-41)	-55 to 150	Active
1N4007RLG	onsemi	1000	1	1.1 @ 1 A	Standard Recovery >500ns	Axial	-65 to 175	Not For New Designs
1N4007FFG	onsemi	1000	1	1.1 @ 1 A	Standard Recovery >500ns	Axial	-65 to 175	Not For New Designs
1N4006G	Taiwan Semiconductor Corporation	800	1	1.0 @ 1 A	Standard Recovery >500ns	DO-204AL (DO-41)	-55 to 150	Active
RGP10M	onsemi	1000	1	1.3 @ 1 A	Fast Recovery ≤500ns	DO-41	-65 to 175	Not For New Designs
MUR1100EG	onsemi	1000	1	1.75 @ 1 A	Fast Recovery ≤500ns	Axial	-65 to 175	Active
MUR1100ERLG	onsemi	1000	1	1.75 @ 1 A	Fast Recovery ≤500ns	Axial	-65 to 175	Active
EGP10K	Fairchild Semiconductor	800	1	1.7 @ 1 A	Fast Recovery ≤500ns	DO-204AL (DO-41)	-65 to 150	Active
MUR2100EG	onsemi	1000	2	2.2 @ 2 A	Fast Recovery ≤500ns	Axial	-65 to 175	Active
MUR2100ERLG	onsemi	1000	2	2.2 @ 2 A	Fast Recovery ≤500ns	Axial	-65 to 175	Active

Engineering Selection Recommendations

For Direct Replacement (Identical Electrical & Mechanical Compatibility):

The 1N4007G (Taiwan Semiconductor Corporation) is the primary direct equivalent. It maintains 1000 V reverse voltage, 1 A current rating, and standard recovery characteristics in a DO-204AL (DO-41) package. This part is Active status and RoHS3 compliant, making it suitable for new designs. The forward voltage is marginally lower (1.0 V vs. 1.1 V), which is advantageous for circuit efficiency. Operating temperature range is -55°C to 150°C, which covers most industrial applications, though the upper limit is 25°C lower than the original part.

For Axial Package Requirement:

The 1N4007RLG and 1N4007FFG (both onsemi) provide identical electrical specifications to the original 1N4007 in axial configuration. Both maintain 1000 V, 1 A, and standard recovery characteristics with extended temperature range (-65°C to 175°C). However, both are marked "Not For New Designs," limiting their use to legacy system support and repair applications.

For Active Status with Identical Voltage & Current:

The MUR1100ERLG (onsemi) is an active product with 1000 V, 1 A ratings and extended temperature range (-65°C to 175°C). This part features fast recovery characteristics (≤500ns) and higher forward voltage (1.75 V @ 1 A). Fast recovery reduces switching losses in high-frequency applications but increases forward voltage drop. This part is suitable for new designs requiring active component status.

For Lower Voltage Applications (800 V):

The 1N4006G (Taiwan Semiconductor Corporation) is suitable only for applications where 800 V reverse voltage is sufficient. It is Active status and RoHS3 compliant. The EGP10K (Fairchild Semiconductor) also provides 800 V rating with fast recovery characteristics and is Active status.

For Higher Current Requirements (2 A):

The MUR2100EG and MUR2100ERLG (onsemi) provide 1000 V at 2 A current rating with fast recovery characteristics. These are suitable only for applications requiring higher current capacity than the original 1 A specification.

Frequently Asked Questions (FAQ)

Q: Can I use 1N4007G as a direct replacement for the discontinued 1N4007?

A: Yes. The 1N4007G maintains identical electrical specifications (1000 V, 1 A, standard recovery) and is available in DO-204AL (DO-41) package. The forward voltage is slightly lower (1.0 V vs. 1.1 V), which is beneficial. The operating temperature range is -55°C to 150°C, which is adequate for most applications, though 25°C lower at the upper limit.

Q: What is the difference between standard recovery and fast recovery diodes?

A: Standard recovery diodes have recovery times greater than 500 ns, while fast recovery diodes have recovery times of 500 ns or less. Fast recovery diodes switch more quickly, reducing switching losses in high-frequency circuits, but typically exhibit higher forward voltage drop. The 1N4007 is a standard recovery device; fast recovery alternatives like MUR1100ERLG are suitable only if the application circuit design accommodates the higher forward voltage.

Q: Can I substitute an 800 V diode (1N4006G or EGP10K) for the 1000 V 1N4007?

A: Only if your application circuit operates at voltages below 800 V. The 1N4007 is rated for 1000 V reverse voltage; using an 800 V part in a 1000 V circuit creates risk of diode failure. Verify your actual circuit voltage requirements before selecting an 800 V alternative.

Q: Why would I choose MUR1100ERLG over 1N4007G if both are 1000 V, 1 A?

A: MUR1100ERLG is Active status (suitable for new designs), while 1N4007G is also Active. MUR1100ERLG features fast recovery characteristics, which reduce switching losses in high-frequency applications. However, its forward voltage is higher (1.75 V vs. 1.0 V), increasing power dissipation. Select MUR1100ERLG only if your circuit operates at frequencies where fast recovery provides measurable benefit.

Q: What does "Not For New Designs" mean for 1N4007RLG and 1N4007FFG?

A: Parts marked "Not For New Designs" are legacy products that remain available for repair and maintenance of existing equipment but should not be selected for new product development. For new designs, choose Active status parts such as 1N4007G or MUR1100ERLG.

Q: Are all substitute parts RoHS3 compliant?

A: The 1N4007G, 1N4007RLG, 1N4007FFG, RGP10M, MUR1100EG, MUR1100ERLG, MUR2100EG, and MUR2100ERLG are all RoHS3 compliant. The EGP10K compliance status is not specified in the provided data. Verify RoHS compliance for your specific application requirements.

Q: Can I use MUR2100EG or MUR2100ERLG (2 A rated) in place of 1N4007 (1 A rated)?

A: Yes, electrically. A 2 A rated diode can handle 1 A current without issue. However, this substitution is only appropriate if your circuit design accommodates the higher forward voltage (2.2 V @ 2 A vs. 1.1 V @ 1 A) and the fast recovery characteristics. Use this substitution only if the application specifically requires higher current capacity or if circuit analysis confirms compatibility with the different electrical characteristics.

Q: What package options are available for 1N4007 substitutes?

A: Substitutes are available in three package configurations: DO-41 (1N4007G, RGP10M), DO-204AL (1N4007G, 1N4006G, EGP10K), and Axial (1N4007RLG, 1N4007FFG, MUR1100EG, MUR1100ERLG, MUR2100EG, MUR2100ERLG). Verify your PCB layout and component spacing requirements before selecting a package variant.

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