1N4002RL Equivalent & Substitute Parts

Part Overview

The 1N4002RL is a general-purpose rectifier diode manufactured by onsemi, rated for 100 V DC reverse voltage and 1 A average rectified current in a through-hole axial package (DO-204AL, DO-41). This component is classified as obsolete, indicating it is no longer in active production. Identification of equivalent and substitute parts is necessary to support ongoing maintenance, repair, and legacy system support where the original part is unavailable or procurement is restricted.

Substiute Parts

1N4002RL
onsemiIn Stock: 8871N4002RL Datasheet
1N4002RL
Current Part
1N4002RLG
onsemiIn Stock: 163291N4002RLG Datasheet
1N4002RLG
Direct
1N4002G
Taiwan Semiconductor CorporationIn Stock: 15061N4002G Datasheet
1N4002G
Similar
1N4934G
Taiwan Semiconductor CorporationIn Stock: 16451N4934G Datasheet
1N4934G
Similar
EGP10B
Fairchild SemiconductorIn Stock: 66205EGP10B Datasheet
EGP10B
Similar
RGP10B
Fairchild SemiconductorIn Stock: 17088RGP10B Datasheet
RGP10B
Similar
1N4002-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 787521N4002-E3/54 Datasheet
1N4002-E3/54
Similar
1N4002-T
Diodes IncorporatedIn Stock: 302981N4002-T Datasheet
1N4002-T
Similar
1N4002-TP
Micro Commercial CoIn Stock: 430771N4002-TP Datasheet
1N4002-TP
Similar
1N4002G-T
Diodes IncorporatedIn Stock: 34161N4002G-T Datasheet
1N4002G-T
Similar
1N4007G-T
Diodes IncorporatedIn Stock: 141651N4007G-T Datasheet
1N4007G-T
Similar
1N4934-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 206691N4934-E3/54 Datasheet
1N4934-E3/54
Similar
1N4934-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 170631N4934-E3/73 Datasheet
1N4934-E3/73
Similar
1N4934-T
Diodes IncorporatedIn Stock: 253571N4934-T Datasheet
1N4934-T
Similar
1N4934G-T
Diodes IncorporatedIn Stock: 52661N4934G-T Datasheet
1N4934G-T
Similar
1N4934GP-AP
Micro Commercial CoIn Stock: 11281N4934GP-AP Datasheet
1N4934GP-AP
Similar
1N4934GP-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 95941N4934GP-E3/54 Datasheet
1N4934GP-E3/54
Similar
1N4934GP-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 43091N4934GP-E3/73 Datasheet
1N4934GP-E3/73
Similar
1N4934GPE-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 120201N4934GPE-E3/54 Datasheet
1N4934GPE-E3/54
Similar
1N6077
Microchip TechnologyIn Stock: 10791N6077 Datasheet
1N6077
Similar
BYT54B-TAP
Vishay General Semiconductor - Diodes DivisionIn Stock: 821BYT54B-TAP Datasheet
BYT54B-TAP
Similar
D2G-T
Diodes IncorporatedIn Stock: 857D2G-T Datasheet
D2G-T
Similar
EGP10B-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 849EGP10B-E3/54 Datasheet
EGP10B-E3/54
Similar
EGP10B-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 2381EGP10B-E3/73 Datasheet
EGP10B-E3/73
Similar
GP10B-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 1050GP10B-E3/73 Datasheet
GP10B-E3/73
Similar
GPP10B-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 912GPP10B-E3/54 Datasheet
GPP10B-E3/54
Similar
GPP10B-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 992GPP10B-E3/73 Datasheet
GPP10B-E3/73
Similar
MPG06B-E3/100
Vishay General Semiconductor - Diodes DivisionIn Stock: 711MPG06B-E3/100 Datasheet
MPG06B-E3/100
Similar
MPG06B-E3/53
Vishay General Semiconductor - Diodes DivisionIn Stock: 1039MPG06B-E3/53 Datasheet
MPG06B-E3/53
Similar
MPG06B-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 11475MPG06B-E3/54 Datasheet
MPG06B-E3/54
Similar
MPG06B-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 1002MPG06B-E3/73 Datasheet
MPG06B-E3/73
Similar
MPG06BHE3_A/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 972MPG06BHE3_A/54 Datasheet
MPG06BHE3_A/54
Similar
MPG06BHE3_A/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 964MPG06BHE3_A/73 Datasheet
MPG06BHE3_A/73
Similar
PR1002G-T
Diodes IncorporatedIn Stock: 1189PR1002G-T Datasheet
PR1002G-T
Similar
RGP10B-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 9590RGP10B-E3/54 Datasheet
RGP10B-E3/54
Similar
RGP10B-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 934RGP10B-E3/73 Datasheet
RGP10B-E3/73
Similar
RGP10BE-E3/53
Vishay General Semiconductor - Diodes DivisionIn Stock: 960RGP10BE-E3/53 Datasheet
RGP10BE-E3/53
Similar
RMPG06B-E3/53
Vishay General Semiconductor - Diodes DivisionIn Stock: 1016RMPG06B-E3/53 Datasheet
RMPG06B-E3/53
Similar
RMPG06B-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 818RMPG06B-E3/54 Datasheet
RMPG06B-E3/54
Similar
RMPG06BHE3_A/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 1022RMPG06BHE3_A/54 Datasheet
RMPG06BHE3_A/54
Similar
SF4002-TAP
Vishay General Semiconductor - Diodes DivisionIn Stock: 880SF4002-TAP Datasheet
SF4002-TAP
Similar
SF4002-TR
Vishay General Semiconductor - Diodes DivisionIn Stock: 835SF4002-TR Datasheet
SF4002-TR
Similar
UF1002-T
Diodes IncorporatedIn Stock: 8003UF1002-T Datasheet
UF1002-T
Similar
UF4002 A0G
Taiwan Semiconductor CorporationIn Stock: 867UF4002 A0G Datasheet
UF4002 A0G
Similar
UF4002-E3/53
Vishay General Semiconductor - Diodes DivisionIn Stock: 952UF4002-E3/53 Datasheet
UF4002-E3/53
Similar
UF4002-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 1339UF4002-E3/54 Datasheet
UF4002-E3/54
Similar
UF4002-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 9343UF4002-E3/73 Datasheet
UF4002-E3/73
Similar
UF4002-M3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 1166UF4002-M3/54 Datasheet
UF4002-M3/54
Similar
UF4002-M3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 897UF4002-M3/73 Datasheet
UF4002-M3/73
Similar
UG1B-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 4592UG1B-E3/54 Datasheet
UG1B-E3/54
Similar
UG1B-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 1977UG1B-E3/73 Datasheet
UG1B-E3/73
Similar
1N4002GP-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 388591N4002GP-E3/54 Datasheet
1N4002GP-E3/54
Parametric Equivalent
1N4002GPE-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 118221N4002GPE-E3/54 Datasheet
1N4002GPE-E3/54
Parametric Equivalent
1N4002GPE-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 100211N4002GPE-E3/73 Datasheet
1N4002GPE-E3/73
Parametric Equivalent
1N4002SP BK TIN/LEAD
Central Semiconductor CorpIn Stock: 29741N4002SP BK TIN/LEAD Datasheet
1N4002SP BK TIN/LEAD
Parametric Equivalent
1N4002SP TR TIN/LEAD
Central Semiconductor CorpIn Stock: 58431N4002SP TR TIN/LEAD Datasheet
1N4002SP TR TIN/LEAD
Parametric Equivalent
GP10B-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 1242GP10B-E3/54 Datasheet
GP10B-E3/54
Parametric Equivalent
GP10BE-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 1148GP10BE-E3/54 Datasheet
GP10BE-E3/54
Parametric Equivalent

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 100 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 10 µA @ 100 V
Mounting Type Through Hole
Package / Case DO-204AL, DO-41, Axial
Operating Temperature - Junction -65 to 175 °C

Substitute Part Grouping Explanation

Substitution of the 1N4002RL is determined by the following critical parameters:

Mandatory Matching Criteria:

  • Voltage - DC Reverse (Vr) (Max): 100 V minimum
  • Current - Average Rectified (Io): 1 A minimum
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL or DO-41 compatible

Acceptable Variation Ranges:

  • Voltage - Forward (Vf) (Max) @ If: 0.95 V to 1.3 V @ 1 A
  • Current - Reverse Leakage @ Vr: 5 µA to 10 µA @ 100 V
  • Speed: Standard Recovery (>500ns) or Fast Recovery (≤500ns)
  • Operating Temperature - Junction: Minimum -55°C, Maximum 150°C or higher

Substitute parts meeting these criteria are functionally compatible with the 1N4002RL in standard rectification applications. Parts with higher voltage ratings (e.g., 1N4007G-T at 1000 V) are included as they provide backward compatibility while exceeding the original specification.

Parameter Comparison

Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) @ 1A [V] Speed Ir @ Vr [µA] Tj (Min-Max) [°C] Product Status RoHS Status
1N4002RL onsemi 100 1 1.1 Standard >500ns 10 @ 100V -65 to 175 Obsolete Non-compliant
1N4002RLG onsemi 100 1 1.1 Standard >500ns 10 @ 100V -65 to 175 Not For New Designs ROHS3 Compliant
1N4002G Taiwan Semiconductor Corporation 100 1 1.0 Standard >500ns 5 @ 100V -55 to 150 Active ROHS3 Compliant
1N4934G Taiwan Semiconductor Corporation 100 1 1.2 Fast ≤500ns 5 @ 100V -55 to 150 Active ROHS3 Compliant
EGP10B Fairchild Semiconductor 100 1 0.95 Fast ≤500ns 5 @ 100V -65 to 150 Active Not specified
RGP10B Fairchild Semiconductor 100 1 1.3 Fast ≤500ns 5 @ 100V -65 to 175 Active Not specified
1N4002-E3/54 Vishay General Semiconductor - Diodes Division 100 1 1.1 Standard >500ns 5 @ 100V -55 to 150 Active ROHS3 Compliant
1N4002-T Diodes Incorporated 100 1 1.0 Standard >500ns 5 @ 100V -65 to 150 Last Time Buy ROHS3 Compliant
1N4002-TP Micro Commercial Co 100 1 1.1 Standard >500ns 5 @ 100V -55 to 150 Not For New Designs ROHS3 Compliant
1N4002G-T Diodes Incorporated 100 1 1.0 Standard >500ns 5 @ 100V -65 to 175 Active ROHS3 Compliant
1N4007G-T Diodes Incorporated 1000 1 1.0 Standard >500ns 5 @ 1000V -65 to 175 Active ROHS3 Compliant

Engineering Selection Recommendations

Direct Equivalents (Identical Electrical Specifications):

1N4002RLG (onsemi) is the direct equivalent to 1N4002RL, maintaining identical electrical parameters. However, 1N4002RLG is classified as "Not For New Designs," indicating limited future availability. This part is ROHS3 compliant, addressing environmental compliance requirements absent in the original 1N4002RL.

Active Production Alternatives (Recommended for New Designs):

1N4002-E3/54 (Vishay General Semiconductor - Diodes Division) and 1N4002G-T (Diodes Incorporated) are active production parts with identical 100 V / 1 A ratings and standard recovery characteristics. Both are ROHS3 compliant and suitable for long-term supply chain stability. 1N4002G-T extends the operating temperature range to -65°C to 175°C, matching the original 1N4002RL specification.

1N4002G (Taiwan Semiconductor Corporation) is an active alternative with marginally lower forward voltage (1.0 V vs. 1.1 V) and reduced reverse leakage (5 µA vs. 10 µA), providing improved performance characteristics within the same package and voltage class.

Fast Recovery Alternatives:

EGP10B (Fairchild Semiconductor) and RGP10B (Fairchild Semiconductor) offer fast recovery characteristics (≤500ns vs. >500ns standard recovery). These parts are suitable for applications requiring reduced reverse recovery time while maintaining 100 V / 1 A ratings. RGP10B matches the original temperature range (-65°C to 175°C).

Higher Voltage Backward-Compatible Option:

1N4007G-T (Diodes Incorporated) provides 1000 V reverse voltage rating with identical 1 A current capacity. This part is suitable for applications where the 1N4002RL is used but higher voltage margin is required. It is active production, ROHS3 compliant, and rated to -65°C to 175°C.

Obsolescence Mitigation:

Parts classified as "Last Time Buy" (1N4002-T) or "Not For New Designs" (1N4002RLG, 1N4002-TP) should be avoided for new designs but remain acceptable for legacy system support where existing inventory is available.

Frequently Asked Questions (FAQ)

Q: Can 1N4002RLG directly replace 1N4002RL?

A: Yes. 1N4002RLG is the direct equivalent with identical electrical specifications: 100 V reverse voltage, 1 A average rectified current, 1.1 V forward voltage at 1 A, and standard recovery characteristics. The primary difference is packaging format (Cut Tape vs. unspecified) and RoHS compliance status (ROHS3 vs. non-compliant).

Q: What is the difference between standard recovery and fast recovery diodes?

A: Standard recovery diodes exhibit reverse recovery time greater than 500 ns, while fast recovery diodes exhibit reverse recovery time of 500 ns or less. Fast recovery diodes (EGP10B, RGP10B, 1N4934G) reduce switching losses in high-frequency applications but are not required for standard rectification at line frequency (50/60 Hz).

Q: Is 1N4007G-T a suitable replacement for 1N4002RL?

A: Yes, 1N4007G-T is functionally compatible. It maintains the 1 A current rating and standard recovery characteristics but provides 1000 V reverse voltage instead of 100 V. This higher voltage rating introduces no functional incompatibility in circuits designed for 100 V operation; the diode simply provides additional voltage margin. Use 1N4007G-T only if supply constraints on 100 V parts exist.

Q: Are all substitute parts available in the same axial through-hole package?

A: Yes. All listed substitute parts are rated for through-hole mounting in DO-204AL or DO-41 axial packages, ensuring mechanical and electrical compatibility with the original 1N4002RL footprint.

Q: Which substitute part is recommended for new designs?

A: 1N4002G-T (Diodes Incorporated) or 1N4002-E3/54 (Vishay) are recommended for new designs. Both are active production, ROHS3 compliant, and maintain identical electrical specifications to the 1N4002RL. 1N4002G-T extends the operating temperature range to -65°C to 175°C, matching the original part.

Q: What is the significance of RoHS compliance?

A: ROHS3 compliance indicates the part meets Restriction of Hazardous Substances Directive requirements, restricting lead, cadmium, mercury, and other hazardous materials. The original 1N4002RL is RoHS non-compliant. Substitute parts with ROHS3 compliance are required for applications subject to environmental regulations in the European Union and other jurisdictions adopting equivalent standards.

Q: Can I use 1N4934G instead of 1N4002RL?

A: Yes, 1N4934G is electrically compatible. It maintains 100 V reverse voltage and 1 A current ratings but features fast recovery characteristics (≤500ns vs. >500ns). The forward voltage is slightly higher (1.2 V vs. 1.1 V). Use 1N4934G only if fast recovery characteristics are required or if standard recovery parts are unavailable.

Q: What does "Not For New Designs" mean?

A: "Not For New Designs" indicates the manufacturer is discontinuing the part and recommends against its use in new product development. These parts may have limited availability and no guaranteed long-term supply. They remain acceptable for legacy system maintenance and repair where existing inventory is available.

Q: Are there differences in reverse leakage current between substitute parts?

A: Yes. The original 1N4002RL specifies 10 µA reverse leakage at 100 V. Most substitute parts specify 5 µA at 100 V, representing improved leakage characteristics. Lower reverse leakage reduces standby current in circuits and improves performance in high-impedance applications. This difference is not functionally problematic in standard rectification circuits.

Request Quote (Ships tomorrow)