1N4002 Equivalent & Substitute Parts

Part Overview

The 1N4002 is a general-purpose rectifier diode manufactured by onsemi, rated for 100 V DC reverse voltage and 1 A average rectified current in a through-hole DO-41 axial package. The device operates across a junction temperature range of -55°C to 175°C and features standard recovery characteristics with reverse recovery time exceeding 500 ns.

The 1N4002 is classified as obsolete. Equivalent and substitute parts are necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements. Substitute devices must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating packaging and recovery speed variations.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	100	V
Current - Average Rectified (Io)	1	A
Voltage - Forward (Vf) (Max) @ If	1.1 V @ 1 A	V
Speed	Standard Recovery >500ns, > 200mA (Io)	—
Current - Reverse Leakage @ Vr	10	µA @ 100 V
Mounting Type	Through Hole	—
Package / Case	DO-204AL, DO-41, Axial	—
Operating Temperature - Junction	-55 to 175	°C
Technology	Standard	—

Substitute Part Grouping Explanation

Substitution of the 1N4002 is determined by the following electrical and mechanical parameters:

Primary Substitution Criteria:

Voltage - DC Reverse (Vr) (Max): Must equal or exceed 100 V
Current - Average Rectified (Io): Must equal or exceed 1 A
Mounting Type: Through Hole (axial or DO-41 package configurations)
Operating Temperature - Junction: Must support the required thermal range

Secondary Compatibility Factors:

Voltage - Forward (Vf): Forward voltage drop variations are acceptable within standard rectifier tolerances
Recovery Speed: Both standard recovery (>500 ns) and fast recovery (≤500 ns) devices are functionally compatible; fast recovery devices provide improved performance characteristics
Current - Reverse Leakage: Lower leakage values indicate improved device quality but do not prevent substitution
Packaging: DO-204AL (DO-41) axial packages are directly interchangeable; alternative through-hole packages maintain electrical compatibility

Substitute parts are grouped into two categories: Direct Equivalents (identical electrical ratings and standard recovery characteristics) and Similar Devices (identical voltage and current ratings with enhanced recovery performance or alternative packaging).

Parameter Comparison

Part Number	Manufacturer	Vr (Max) [V]	Io [A]	Vf (Max) @ If [V]	Speed	Ir @ Vr [µA]	Tj (°C)	Package	Status
1N4002	onsemi	100	1	1.1 @ 1 A	Standard >500ns	10 @ 100 V	-55 to 175	DO-41 Axial	Obsolete
1N4002G	Taiwan Semiconductor	100	1	1.0 @ 1 A	Standard >500ns	5 @ 100 V	-55 to 150	DO-204AL (DO-41)	Active
1N4002RLG	onsemi	100	1	1.1 @ 1 A	Standard >500ns	10 @ 100 V	-65 to 175	Axial	Not For New Designs
1N4934G	Taiwan Semiconductor	100	1	1.2 @ 1 A	Fast ≤500ns	5 @ 100 V	-55 to 150	DO-204AL (DO-41)	Active
1N4934RLG	onsemi	100	1	1.2 @ 1 A	Fast ≤500ns	5 @ 100 V	-65 to 150	Axial	Not For New Designs
EGP10B	Fairchild Semiconductor	100	1	0.95 @ 1 A	Fast ≤500ns	5 @ 100 V	-65 to 150	DO-204AL (DO-41)	Active
MUR110G	onsemi	100	1	0.875 @ 1 A	Fast ≤500ns	2 @ 100 V	-65 to 175	Axial	Active
MUR110RLG	onsemi	100	1	0.875 @ 1 A	Fast ≤500ns	2 @ 100 V	-65 to 175	Axial	Active
MUR210RLG	onsemi	100	2	0.94 @ 2 A	Fast ≤500ns	2 @ 100 V	-65 to 175	Axial	Active
MURA110T3G	onsemi	100	1	0.875 @ 1 A	Fast ≤500ns	2 @ 100 V	-65 to 175	SMA (Surface Mount)	Active

Engineering Selection Recommendations

Direct Equivalent Selection (Standard Recovery, 1 A Rating):

The 1N4002G (Taiwan Semiconductor) provides the closest electrical equivalent to the 1N4002. Both devices maintain standard recovery characteristics (>500 ns) and identical voltage and current ratings. The 1N4002G is classified as Active and carries ROHS3 compliance. The maximum junction temperature of 1N4002G is 150°C, which is 25°C lower than the original 1N4002 specification; this difference is acceptable for applications not requiring the full 175°C thermal range.

The 1N4002RLG (onsemi) offers an alternative from the original manufacturer with identical electrical characteristics and extended junction temperature range (-65°C to 175°C). This device is classified as Not For New Designs, indicating limited future availability.

Enhanced Performance Selection (Fast Recovery, 1 A Rating):

The 1N4934G (Taiwan Semiconductor) and 1N4934RLG (onsemi) provide fast recovery characteristics (≤500 ns) while maintaining 100 V and 1 A ratings. Fast recovery devices reduce switching losses and are suitable for applications requiring improved efficiency. Both devices are electrically compatible with the 1N4002 across voltage and current parameters.

The EGP10B (Fairchild Semiconductor) offers fast recovery performance with the lowest forward voltage drop (0.95 V @ 1 A) among 1 A alternatives. This device is Active and suitable for new designs.

The MUR110G and MUR110RLG (onsemi, SWITCHMODE™ series) provide fast recovery performance with superior reverse leakage characteristics (2 µA @ 100 V) and extended junction temperature range (-65°C to 175°C). Both devices are Active and suitable for new designs.

Higher Current Selection (2 A Rating):

The MUR210RLG (onsemi, SWITCHMODE™ series) is rated for 2 A average rectified current at 100 V reverse voltage. This device is suitable for applications requiring higher current capacity while maintaining the same voltage rating. The device is Active and carries ROHS3 compliance.

Surface Mount Alternative:

The MURA110T3G (onsemi) provides a surface-mount equivalent in SMA package with fast recovery characteristics and 1 A rating. This device is suitable for applications requiring surface-mount technology and is classified as Active.

Compliance and Availability:

All recommended substitute parts carry REACH Unaffected status and EAR99 ECCN classification, matching the original 1N4002 regulatory profile. Active status devices are preferred for new designs and long-term supply chain continuity.

Frequently Asked Questions (FAQ)

Q: Can the 1N4002 be replaced with a fast recovery diode such as the 1N4934G or EGP10B?

A: Yes. Fast recovery diodes (≤500 ns) are functionally compatible with standard recovery devices (>500 ns) when voltage and current ratings are identical. Fast recovery devices provide improved switching performance and reduced power dissipation in high-frequency applications. The 1N4934G and EGP10B both maintain 100 V and 1 A ratings and are direct substitutes.

Q: What is the difference between the 1N4002G and 1N4002RLG?

A: Both devices provide equivalent electrical performance with 100 V and 1 A ratings and standard recovery characteristics. The 1N4002G is manufactured by Taiwan Semiconductor and is classified as Active. The 1N4002RLG is manufactured by onsemi and is classified as Not For New Designs. The 1N4002G is recommended for new designs due to its Active status and ongoing availability.

Q: Can the MUR210RLG be used as a substitute for the 1N4002?

A: The MUR210RLG is rated for 2 A average rectified current, which exceeds the 1 A requirement of the 1N4002. This device is electrically compatible and can be used as a substitute in applications where the higher current rating does not create design conflicts. The MUR210RLG provides fast recovery performance and is classified as Active.

Q: Are there packaging differences between substitute parts?

A: Yes. The 1N4002 is specified in DO-41 axial package. Substitute parts are available in DO-204AL (DO-41) axial packages, which are mechanically and electrically interchangeable. The MURA110T3G is available in SMA surface-mount package and requires different PCB layout and assembly processes. Through-hole and surface-mount packages are not interchangeable without design modification.

Q: What is the significance of the operating temperature range difference between the 1N4002 and 1N4002G?

A: The 1N4002 operates from -55°C to 175°C, while the 1N4002G operates from -55°C to 150°C. The 25°C difference in maximum junction temperature does not affect substitution in applications operating within the 1N4002G range. Applications requiring operation above 150°C must use alternatives such as the MUR110G or MUR110RLG, which support -65°C to 175°C.

Q: How do reverse leakage current differences affect substitution?

A: The 1N4002 specifies 10 µA reverse leakage at 100 V. Substitute devices with lower leakage values (5 µA or 2 µA) provide improved performance characteristics but do not prevent substitution. Lower leakage reduces standby power consumption and improves circuit efficiency. Devices with higher leakage values would not be acceptable substitutes.

Q: Is the 1N4002RLG suitable for new designs?

A: The 1N4002RLG is classified as Not For New Designs. While electrically compatible with the 1N4002, this designation indicates limited future availability and manufacturer support. For new designs, Active status devices such as the 1N4002G, 1N4934G, EGP10B, or MUR110G are recommended.

Q: What are the advantages of MUR series diodes compared to standard 1N4002 equivalents?

A: MUR series devices (MUR110G, MUR110RLG, MUR210RLG) feature fast recovery characteristics (≤500 ns), lower forward voltage drop (0.875 V @ 1 A), and significantly lower reverse leakage current (2 µA @ 100 V). These characteristics reduce power dissipation and switching losses, making MUR devices suitable for high-frequency and high-efficiency applications. All MUR devices are classified as Active.

Q: Can the 1N4002 be replaced with a surface-mount device?

A: The MURA110T3G provides a surface-mount SMA equivalent with 100 V and 1 A ratings. However, surface-mount and through-hole packages require different PCB designs and assembly processes. Direct replacement on existing through-hole PCBs is not possible without design modification.

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