1N4001-TP Equivalent & Substitute Parts

Part Overview

The 1N4001-TP is a general-purpose rectifier diode manufactured by Micro Commercial Co, rated for 50 V DC reverse voltage and 1 A average rectified current in a DO-41 through-hole package. This device is classified as "Not For New Designs," indicating it has reached end-of-life status. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support legacy system maintenance and repairs.

Substiute Parts

1N4001-TP
Micro Commercial CoIn Stock: 17121N4001-TP Datasheet
1N4001-TP
Current Part
1N4001-T
Diodes IncorporatedIn Stock: 154441N4001-T Datasheet
1N4001-T
Direct
1N4001-E3/53
Vishay General Semiconductor - Diodes DivisionIn Stock: 23841N4001-E3/53 Datasheet
1N4001-E3/53
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1N4001G
Taiwan Semiconductor CorporationIn Stock: 16011N4001G Datasheet
1N4001G
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1N4001G
Taiwan Semiconductor CorporationIn Stock: 16011N4001G Datasheet
1N4001G
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1N4001G-T
Diodes IncorporatedIn Stock: 53981N4001G-T Datasheet
1N4001G-T
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1N4001RLG
onsemiIn Stock: 18251N4001RLG Datasheet
1N4001RLG
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1N4002G-T
Diodes IncorporatedIn Stock: 34161N4002G-T Datasheet
1N4002G-T
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1N4933-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 146471N4933-E3/54 Datasheet
1N4933-E3/54
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1N6076
Microchip TechnologyIn Stock: 10701N6076 Datasheet
1N6076
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BYT54A-TAP
Vishay General Semiconductor - Diodes DivisionIn Stock: 926BYT54A-TAP Datasheet
BYT54A-TAP
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D1G-T
Diodes IncorporatedIn Stock: 1015D1G-T Datasheet
D1G-T
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EGP10A-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 1288EGP10A-E3/54 Datasheet
EGP10A-E3/54
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EGP10A-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 958EGP10A-E3/73 Datasheet
EGP10A-E3/73
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MPG06A-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 864MPG06A-E3/54 Datasheet
MPG06A-E3/54
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MPG06AHE3_A/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 930MPG06AHE3_A/54 Datasheet
MPG06AHE3_A/54
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SF4001-TAP
Vishay General Semiconductor - Diodes DivisionIn Stock: 1055SF4001-TAP Datasheet
SF4001-TAP
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SF4001-TR
Vishay General Semiconductor - Diodes DivisionIn Stock: 836SF4001-TR Datasheet
SF4001-TR
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UF1001-T
Diodes IncorporatedIn Stock: 15183UF1001-T Datasheet
UF1001-T
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1N4001-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 15031N4001-E3/54 Datasheet
1N4001-E3/54
Parametric Equivalent
1N4001-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 14541N4001-E3/73 Datasheet
1N4001-E3/73
Parametric Equivalent
1N4001-G
Comchip TechnologyIn Stock: 563741N4001-G Datasheet
1N4001-G
Parametric Equivalent
1N4001E-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 9731N4001E-E3/73 Datasheet
1N4001E-E3/73
Parametric Equivalent
GPP10A-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 1114GPP10A-E3/54 Datasheet
GPP10A-E3/54
Parametric Equivalent
PG4001_R2_00001
Panjit International Inc.In Stock: 5418PG4001_R2_00001 Datasheet
PG4001_R2_00001
Parametric Equivalent

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 50 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A V
Speed Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 2 µs
Current - Reverse Leakage @ Vr 5 µA @ 50 V
Mounting Type Through Hole
Package / Case DO-204AL, DO-41, Axial
Operating Temperature - Junction -55 to 150 °C
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the 1N4001-TP is determined by the following critical parameters:

Electrical Compatibility Requirements:

  • Voltage - DC Reverse (Vr) (Max): Must equal or exceed 50 V
  • Current - Average Rectified (Io): Must equal or exceed 1 A
  • Voltage - Forward (Vf) (Max) @ If: Must not exceed 1.1 V @ 1 A for direct drop-in replacement
  • Current - Reverse Leakage @ Vr: Must not exceed 5 µA @ 50 V
  • Speed Classification: Standard Recovery (>500ns) or Fast Recovery (≤500ns) acceptable

Mechanical Compatibility Requirements:

  • Mounting Type: Through Hole (required)
  • Package / Case: DO-204AL, DO-41, or Axial (all compatible with 1N4001-TP footprint)

Environmental & Compliance Requirements:

  • Operating Temperature - Junction: Must support -55°C to 150°C range
  • RoHS Status: ROHS3 Compliant (required)
  • REACH Status: REACH Unaffected (required)

Substitute parts are grouped into two categories: Direct Equivalents (identical electrical and mechanical specifications) and Functional Equivalents (meet or exceed all electrical requirements with compatible packaging).

Parameter Comparison

Part Number Manufacturer Vr (Max) [V] Io [A] Vf (Max) @ If [V] Speed trr [µs/ns] Ir @ Vr [µA] Package Temp Range [°C] Product Status
1N4001-TP Micro Commercial Co 50 1 1.1 @ 1 A Standard >500ns 2 µs 5 @ 50 V DO-41 -55 to 150 Not For New Designs
1N4001-T Diodes Incorporated 50 1 1 @ 1 A Standard >500ns 5 @ 50 V DO-41 -65 to 150 Last Time Buy
1N4001-E3/53 Vishay General Semiconductor - Diodes Division 50 1 1.1 @ 1 A Standard >500ns 5 @ 50 V DO-204AL (DO-41) -50 to 150 Active
1N4001G Taiwan Semiconductor Corporation 50 1 1 @ 1 A Standard >500ns 5 @ 50 V DO-204AL (DO-41) -55 to 150 Active
1N4001G-T Diodes Incorporated 50 1 1 @ 1 A Standard >500ns 2 µs 5 @ 50 V DO-41 -65 to 175 Active
1N4001RLG onsemi 50 1 1.1 @ 1 A Standard >500ns 10 @ 50 V Axial -65 to 175 Not For New Designs
1N4933-E3/54 Vishay General Semiconductor - Diodes Division 50 1 1.2 @ 1 A Fast Recovery ≤500ns 0.2 µs 5 @ 50 V DO-204AL (DO-41) -50 to 150 Active
1N4002G-T Diodes Incorporated 100 1 1 @ 1 A Standard >500ns 2 µs 5 @ 100 V DO-41 -65 to 175 Active
1N6076 Microchip Technology 50 1.3 1.76 @ 18.8 A Fast Recovery ≤500ns 0.03 µs 5 @ 50 V Axial -65 to 155 Active
BYT54A-TAP Vishay General Semiconductor - Diodes Division 50 1.25 1.5 @ 1 A Fast Recovery ≤500ns 0.1 µs 5 @ 50 V SOD-57 -55 to 175 Active

Engineering Selection Recommendations

Direct Equivalents (Recommended for 1:1 Replacement):

The following parts provide direct electrical and mechanical compatibility with the 1N4001-TP and are recommended as primary substitutes:

  • 1N4001-T (Diodes Incorporated): Identical electrical specifications with improved forward voltage (1 V vs. 1.1 V). Active product status ensures long-term availability. Extended temperature range (-65°C to 150°C) provides additional operational margin.

  • 1N4001-E3/53 (Vishay General Semiconductor - Diodes Division): Matches all electrical parameters of the 1N4001-TP. Active product status with ROHS3 compliance. DO-204AL package is mechanically compatible with DO-41 footprint.

  • 1N4001G (Taiwan Semiconductor Corporation): Meets all electrical requirements with improved forward voltage (1 V). Active product status. Tape & Reel packaging suitable for automated assembly environments.

  • 1N4001G-T (Diodes Incorporated): Superior specification with extended temperature range (-65°C to 175°C) and improved forward voltage (1 V). Active product status. Recommended for applications requiring enhanced thermal performance.

Functional Equivalents (Acceptable with Application Review):

  • 1N4933-E3/54 (Vishay General Semiconductor - Diodes Division): Meets voltage and current requirements. Fast recovery characteristic (200 ns) provides improved switching performance compared to standard recovery. Forward voltage slightly elevated (1.2 V). Active product status. Suitable for applications where faster recovery is beneficial.

  • 1N4002G-T (Diodes Incorporated): Exceeds voltage rating (100 V vs. 50 V). Identical current rating and forward voltage. Active product status with extended temperature range. Acceptable for applications where higher voltage margin is required.

  • 1N6076 (Microchip Technology): Exceeds current rating (1.3 A vs. 1 A). Meets voltage requirement. Fast recovery characteristic. Active product status. Suitable for applications requiring higher current capacity.

Not Recommended for New Applications:

  • 1N4001RLG (onsemi): Product status "Not For New Designs" limits long-term availability. Reverse leakage current elevated (10 µA vs. 5 µA). Axial package may require board layout modification.

  • BYT54A-TAP (Vishay General Semiconductor - Diodes Division): SOD-57 package incompatible with DO-41 footprint. Forward voltage elevated (1.5 V @ 1 A). Intended for avalanche applications, not general-purpose rectification.

Frequently Asked Questions (FAQ)

Q: Can 1N4001-T be used as a direct replacement for 1N4001-TP?

A: Yes. The 1N4001-T meets or exceeds all electrical specifications of the 1N4001-TP. Forward voltage is improved (1 V vs. 1.1 V), and the extended temperature range (-65°C to 150°C) provides additional operational margin. Both devices are packaged in DO-41 and are mechanically compatible.

Q: What is the difference between standard recovery and fast recovery diodes?

A: Standard recovery diodes (>500 ns reverse recovery time) are suitable for general-purpose rectification and power supply applications. Fast recovery diodes (≤500 ns reverse recovery time) exhibit reduced switching losses and are preferred in high-frequency switching applications. The 1N4001-TP is a standard recovery device; fast recovery substitutes such as 1N4933-E3/54 are acceptable if application switching frequency permits.

Q: Are DO-41 and DO-204AL packages interchangeable?

A: Yes. DO-204AL and DO-41 refer to the same physical package (axial lead, 0.3 inch body length). Both designations are used interchangeably by different manufacturers. Parts specified as DO-204AL (DO-41) are mechanically compatible with DO-41 footprints.

Q: Can 1N4002G-T replace 1N4001-TP?

A: Yes, with application review. The 1N4002G-T exceeds the voltage rating (100 V vs. 50 V) and matches the current rating (1 A). This higher voltage rating provides additional safety margin in applications subject to transient overvoltages. No electrical or mechanical incompatibility exists.

Q: Why is the 1N4001-TP marked "Not For New Designs"?

A: This designation indicates the part has reached end-of-life status and is no longer recommended for new product development. Existing inventory may be available, but long-term supply cannot be guaranteed. Active alternatives such as 1N4001-T, 1N4001-E3/53, or 1N4001G-T are recommended for new designs.

Q: What is the significance of RoHS3 compliance?

A: ROHS3 (Restriction of Hazardous Substances Directive 3) compliance certifies that the device does not contain restricted substances including lead, cadmium, mercury, hexavalent chromium, polybrominated biphenyls, or polybrominated diphenyl ethers. All recommended substitutes are ROHS3 compliant, ensuring regulatory compliance in regulated markets.

Q: Can 1N6076 be used in place of 1N4001-TP?

A: Yes, with application review. The 1N6076 exceeds the current rating (1.3 A vs. 1 A) and meets the voltage requirement (50 V). However, the axial package may require board layout modification if the original design uses DO-41 footprint. Forward voltage is elevated (1.76 V @ 18.8 A), which may affect circuit performance in voltage-sensitive applications.

Q: What does "Current - Reverse Leakage @ Vr" indicate?

A: Reverse leakage current is the small current that flows through the diode when reverse-biased. Lower values indicate better diode quality and reduced power dissipation in reverse bias. The 1N4001-TP specifies 5 µA @ 50 V. Most substitutes maintain this specification; 1N4001RLG exhibits 10 µA, which is acceptable but represents slightly higher leakage.

Q: Is packaging (Cut Tape vs. Tape & Reel) significant for substitution?

A: Packaging affects supply chain logistics and assembly processes but does not impact electrical or mechanical compatibility. Cut Tape (CT) packaging is suitable for manual assembly and small-volume applications. Tape & Reel (TR) packaging is optimized for automated pick-and-place assembly. Both formats contain identical components and are functionally equivalent.

Q: What is the operating temperature range significance?

A: The operating temperature range specifies the junction temperature limits within which the device maintains specified electrical characteristics. The 1N4001-TP operates from -55°C to 150°C. Substitutes with extended ranges (e.g., 1N4001G-T: -65°C to 175°C) provide additional thermal margin and are suitable for applications in extreme environments or with higher power dissipation.

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