1N2158 Equivalent & Substitute Parts

Part Overview

The 1N2158 is a general-purpose rectifier diode manufactured by Microchip Technology, rated for 400 V DC reverse voltage and 25 A average rectified current in a DO-203AB (DO-5) stud mount package. This component is classified as Active product status and utilizes standard recovery technology with a reverse recovery time of 5 µs. The 1N2158 is suitable for power supply rectification, industrial power conversion, and general-purpose rectification applications requiring stud mount mechanical configuration.

Equivalent and substitute parts are identified to provide design flexibility, accommodate supply chain variations, and support applications where alternative electrical or mechanical characteristics may be acceptable within system design parameters.

Substiute Parts

1N2158
Microchip TechnologyIn Stock: 7251N2158 Datasheet
1N2158
Current Part
VS-40HFL40S02
Vishay General Semiconductor - Diodes DivisionIn Stock: 1097VS-40HFL40S02 Datasheet
VS-40HFL40S02
Similar

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 400 V
Current - Average Rectified (Io) 25 A
Voltage - Forward (Vf) (Max) 1.19 V @ 90 A
Reverse Recovery Time (trr) 5 µs
Current - Reverse Leakage @ Vr 10 µA @ 400 V
Package / Case DO-203AB, DO-5, Stud
Mounting Type Stud Mount
Operating Temperature - Junction -65°C ~ 200°C
Technology Standard
Product Status Active

Substitute Part Grouping Explanation

Substitution of the 1N2158 with the VS-40HFL40S02 is permissible based on the following criteria:

Matching Parameters:

  • Voltage - DC Reverse (Vr) (Max): Both rated 400 V
  • Package / Case: Both utilize DO-203AB (DO-5) stud mount configuration
  • Mounting Type: Both feature stud mount mechanical interface
  • Product Status: Both classified as Active

Differing Parameters:

  • Current - Average Rectified (Io): VS-40HFL40S02 rated 40 A (higher than 1N2158 at 25 A)
  • Reverse Recovery Time (trr): VS-40HFL40S02 rated 200 ns (faster than 1N2158 at 5 µs)
  • Operating Temperature - Junction: VS-40HFL40S02 rated -40°C ~ 125°C (narrower range than 1N2158 at -65°C ~ 200°C)

The VS-40HFL40S02 operates within the same voltage class and package specification, permitting substitution in applications where the higher current rating and faster recovery characteristics do not create design conflicts.

Parameter Comparison

Parameter 1N2158 (Microchip) VS-40HFL40S02 (Vishay) Unit
Voltage - DC Reverse (Vr) (Max) 400 400 V
Current - Average Rectified (Io) 25 40 A
Voltage - Forward (Vf) (Max) 1.19 @ 90 A 1.95 @ 40 A V
Reverse Recovery Time (trr) 5 0.2 µs
Current - Reverse Leakage @ Vr 10 @ 400 V 100 @ 400 V µA
Package / Case DO-203AB, DO-5, Stud DO-203AB, DO-5, Stud
Mounting Type Stud Mount Stud Mount
Operating Temperature - Junction -65°C ~ 200°C -40°C ~ 125°C
Technology Standard Fast Recovery
Product Status Active Active

Engineering Selection Recommendations

1N2158 Selection Criteria:

  • Applications requiring standard recovery characteristics with 5 µs reverse recovery time
  • Systems operating across extended temperature ranges from -65°C to 200°C junction temperature
  • Designs where lower reverse leakage current (10 µA @ 400 V) is specified
  • Circuits rated for 25 A average rectified current at 400 V DC reverse voltage
  • REACH Unaffected compliance status applicable

VS-40HFL40S02 Selection Criteria:

  • Applications requiring fast recovery characteristics with 200 ns reverse recovery time
  • Systems operating within -40°C to 125°C junction temperature range
  • Designs where higher current capacity (40 A) provides design margin above 25 A requirement
  • Circuits where RoHS3 compliance is mandatory
  • Moisture Sensitivity Level 1 (Unlimited) requirement satisfied

Both components maintain Active product status and EAR99 ECCN classification. Selection between these parts depends on specific application requirements regarding recovery speed, temperature range, and current capacity rather than voltage class or package compatibility.

Frequently Asked Questions (FAQ)

Q: Can the VS-40HFL40S02 directly replace the 1N2158 in existing designs?

A: Direct mechanical and electrical substitution is possible due to identical package specification (DO-203AB, DO-5, stud mount) and matching 400 V DC reverse voltage rating. However, the differing reverse recovery time (200 ns versus 5 µs) and operating temperature range (-40°C ~ 125°C versus -65°C ~ 200°C) must be evaluated against specific circuit requirements before implementation.

Q: What is the significance of the reverse recovery time difference?

A: The 1N2158 operates with standard recovery at 5 µs, while the VS-40HFL40S02 features fast recovery at 200 ns. Fast recovery reduces switching losses in high-frequency applications but may introduce different electromagnetic characteristics. Applications operating at low switching frequencies may not require fast recovery technology.

Q: Are there temperature range limitations when substituting?

A: The VS-40HFL40S02 operates within -40°C to 125°C junction temperature, which is narrower than the 1N2158 range of -65°C to 200°C. Applications requiring operation below -40°C or above 125°C junction temperature cannot use the VS-40HFL40S02 as a substitute.

Q: Does the higher current rating of the VS-40HFL40S02 affect circuit operation?

A: The VS-40HFL40S02 is rated for 40 A average rectified current compared to the 1N2158 at 25 A. This higher rating provides additional current capacity but does not negatively affect circuits designed for 25 A operation. The component will operate within its specifications at lower current levels.

Q: What compliance differences exist between these parts?

A: Both components are REACH Unaffected and classified as EAR99. The VS-40HFL40S02 carries RoHS3 compliance and Moisture Sensitivity Level 1 (Unlimited) designation, while the 1N2158 specifications do not include these certifications in the provided data.

Q: How do forward voltage characteristics compare?

A: The 1N2158 exhibits 1.19 V forward voltage at 90 A, while the VS-40HFL40S02 exhibits 1.95 V forward voltage at 40 A. These measurements are taken at different current levels, making direct comparison dependent on actual circuit operating current.

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