15GN01MA-TL-E Equivalent & Substitute Parts

Part Overview

The 15GN01MA-TL-E is an RF Transistor NPN manufactured by onsemi, designed for RF applications requiring operation at 1.5GHz with a maximum collector-emitter breakdown voltage of 8V and maximum power dissipation of 400mW. This part is classified as Obsolete, necessitating identification of active equivalent components for new designs and ongoing production requirements. The 3-MCP surface mount package provides compact integration for RF circuit implementations.

Substiute Parts

15GN01MA-TL-E

onsemiIn Stock: 116915GN01MA-TL-E Datasheet

Current PartRFQ

15GN03MA-TL-E

onsemiIn Stock: 3017215GN03MA-TL-E Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the 15GN01MA-TL-E is determined by the following critical parameters:

Mandatory Matching Criteria:

• Transistor Type: NPN
• Frequency - Transition: 1.5GHz
• Power - Max: 400mW
• Mounting Type: Surface Mount
• Supplier Device Package: 3-MCP
• Operating Temperature: 150°C (TJ)

Allowable Parameter Variations:

• Voltage - Collector Emitter Breakdown (Max): Equal to or greater than 8V
• Current - Collector (Ic) (Max): Equal to or greater than 50mA
• DC Current Gain (hFE): May vary based on application requirements

The 15GN03MA-TL-E qualifies as a direct substitute, meeting all mandatory criteria while providing enhanced electrical specifications including higher voltage rating (10V), increased collector current capability (70mA), and active product status.

Parameter Comparison

Engineering Selection Recommendations

The 15GN03MA-TL-E is the qualified substitute for the obsolete 15GN01MA-TL-E based on the following factors:

Product Status: The 15GN03MA-TL-E maintains Active product status, ensuring continued availability and manufacturing support. The 15GN01MA-TL-E is classified as Obsolete, creating supply chain risk for new production and long-term support.

Regulatory Compliance: Both parts maintain identical REACH Unaffected and EAR99 ECCN classifications, ensuring equivalent regulatory standing. The 15GN03MA-TL-E carries ROHS3 Compliant certification, providing enhanced environmental compliance documentation.

Electrical Compatibility: The 15GN03MA-TL-E provides superior electrical specifications with 10V collector-emitter breakdown voltage (exceeding the 8V requirement) and 70mA maximum collector current (exceeding the 50mA requirement). These enhancements provide design margin for RF applications while maintaining identical 1.5GHz transition frequency and 400mW power dissipation.

Package Compatibility: Both parts utilize the 3-MCP supplier device package with identical surface mount technology, enabling direct PCB layout compatibility.

Frequently Asked Questions (FAQ)

Q: Can the 15GN03MA-TL-E directly replace the 15GN01MA-TL-E in existing designs?

A: The 15GN03MA-TL-E is electrically compatible as a substitute. Both parts share identical transition frequency (1.5GHz), maximum power dissipation (400mW), operating temperature (150°C TJ), and supplier device package (3-MCP). The 15GN03MA-TL-E provides higher voltage rating (10V vs. 8V) and increased collector current capability (70mA vs. 50mA), which are compatible enhancements for RF circuit applications.

Q: What are the key differences between these parts?

A: The primary differences are: (1) Product Status—15GN01MA-TL-E is Obsolete while 15GN03MA-TL-E is Active; (2) Voltage Rating—10V vs. 8V maximum collector-emitter breakdown; (3) Collector Current—70mA vs. 50mA maximum; (4) DC Current Gain—100 vs. 200 minimum hFE at 10mA, 5V; (5) Package designation—SC-70, SOT-323 vs. 3-SMD, Gull Wing; (6) Compliance—15GN03MA-TL-E includes ROHS3 Compliant certification.

Q: Are there package compatibility concerns?

A: Both parts utilize the 3-MCP supplier device package and surface mount technology. While the package case designations differ (SC-70, SOT-323 vs. 3-SMD, Gull Wing), the supplier device package specification is identical, indicating PCB footprint compatibility.

Q: What is the impact of the lower DC Current Gain in the 15GN03MA-TL-E?

A: The 15GN03MA-TL-E specifies a minimum DC Current Gain (hFE) of 100 at 10mA, 5V, compared to 200 for the 15GN01MA-TL-E. This parameter variation reflects different transistor characterization but does not prevent substitution. RF circuit design typically operates these transistors in saturation or linear regions where gain variation is accommodated through circuit design.

Q: Is the 15GN03MA-TL-E suitable for new production designs?

A: The 15GN03MA-TL-E is classified as Active product status with ROHS3 Compliant certification and REACH Unaffected regulatory standing, making it suitable for new production designs requiring RF transistor functionality at 1.5GHz with 400mW power dissipation.