Equivalent & Substitute Parts for 15C01C-TB-E

Part Overview

The 15C01C-TB-E is an NPN bipolar junction transistor manufactured by onsemi, designed for general-purpose switching and amplification applications. This device features a maximum collector current of 700 mA, collector-emitter breakdown voltage of 15 V, and maximum power dissipation of 300 mW in a surface mount 3-CP package (TO-236-3/SC-59/SOT-23-3).

The 15C01C-TB-E is classified as obsolete. Locating equivalent substitute parts is necessary to support ongoing production requirements, maintenance operations, and design continuity where this component is specified in existing applications.

Substiute Parts

15C01C-TB-E
onsemiIn Stock: 75915C01C-TB-E Datasheet
15C01C-TB-E
Current Part
2SD1048-7-TB-E
onsemiIn Stock: 121732SD1048-7-TB-E Datasheet
2SD1048-7-TB-E
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Key Parameters

Parameter Value Unit
Transistor Type NPN
Current - Collector (Ic) Max 700 mA
Voltage - Collector Emitter Breakdown (Max) 15 V
Power - Max 300 mW
Frequency - Transition 330 MHz
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Operating Temperature (Max) 150 °C
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the 15C01C-TB-E is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

  • Transistor type must be NPN
  • Maximum collector current (Ic) must be equal to or greater than 700 mA
  • Collector-emitter breakdown voltage (VCEO) must be equal to or greater than 15 V
  • Maximum power dissipation must support the application requirements
  • Transition frequency must be sufficient for the intended switching or amplification speed

Mechanical Compatibility Criteria:

  • Package type must be TO-236-3, SC-59, or SOT-23-3 (3-CP supplier designation)
  • Surface mount mounting type required
  • Moisture sensitivity level and compliance certifications must be maintained

Regulatory Compliance:

  • RoHS3 compliance required
  • REACH unaffected status required

The 2SD1048-7-TB-E meets all electrical and mechanical compatibility requirements for direct substitution. This part is manufactured by onsemi, maintains identical package specifications, and carries active product status with full inventory availability.

Parameter Comparison

Parameter 15C01C-TB-E 2SD1048-7-TB-E Unit
Manufacturer onsemi onsemi
Product Status Obsolete Active
Transistor Type NPN NPN
Current - Collector (Ic) Max 700 700 mA
Voltage - Collector Emitter Breakdown (Max) 15 15 V
Vce Saturation (Max) 300mV @ 10mA, 200mA 80mV @ 10mA, 100mA V
Current - Collector Cutoff (Max) 100 100 nA
DC Current Gain (hFE) Min 300 @ 10mA, 2V 200 @ 50mA, 2V
Power - Max 300 200 mW
Frequency - Transition 330 250 MHz
Operating Temperature (Max) 150 125 °C
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
RoHS Status ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level 1 (Unlimited) 1 (Unlimited)
REACH Status REACH Unaffected REACH Unaffected

Engineering Selection Recommendations

The 2SD1048-7-TB-E is the qualified substitute for the obsolete 15C01C-TB-E. Selection is based on the following factors:

Product Status: The 2SD1048-7-TB-E carries active product status with 12,100 units in current inventory, ensuring long-term availability and supply chain continuity compared to the obsolete 15C01C-TB-E.

Electrical Compatibility: Both devices share identical maximum collector current (700 mA) and collector-emitter breakdown voltage (15 V) specifications. The 2SD1048-7-TB-E operates within the same voltage and current envelope as the original part.

Package Compatibility: Both parts utilize the TO-236-3/SC-59/SOT-23-3 surface mount package, enabling direct board-level substitution without layout modifications.

Regulatory Compliance: The 2SD1048-7-TB-E maintains ROHS3 compliance and REACH unaffected status, matching the regulatory posture of the original component.

Performance Considerations: The 2SD1048-7-TB-E exhibits lower maximum power dissipation (200 mW versus 300 mW) and reduced transition frequency (250 MHz versus 330 MHz). Applications operating at the thermal or frequency limits of the original 15C01C-TB-E require circuit-level evaluation to confirm adequate performance margins with the substitute part.

Frequently Asked Questions (FAQ)

Q: Can the 2SD1048-7-TB-E be used as a direct replacement for the 15C01C-TB-E in all applications?

A: The 2SD1048-7-TB-E is electrically and mechanically compatible for direct substitution in applications where the reduced maximum power dissipation (200 mW versus 300 mW) and lower transition frequency (250 MHz versus 330 MHz) do not exceed circuit requirements. Applications operating near these performance limits require evaluation.

Q: Are there package differences between the 15C01C-TB-E and 2SD1048-7-TB-E?

A: Both parts use identical surface mount packaging: TO-236-3, SC-59, or SOT-23-3. No board layout or footprint modifications are required for substitution.

Q: What is the difference in saturation voltage between these parts?

A: The 15C01C-TB-E exhibits Vce saturation of 300 mV at 10 mA, 200 mA, while the 2SD1048-7-TB-E shows 80 mV at 10 mA, 100 mA. The 2SD1048-7-TB-E demonstrates lower saturation voltage, which may improve switching efficiency in certain circuit topologies.

Q: Does the 2SD1048-7-TB-E meet the same compliance requirements as the 15C01C-TB-E?

A: Yes. Both parts are ROHS3 compliant, REACH unaffected, and carry identical moisture sensitivity level (MSL 1 - Unlimited) and ECCN classifications.

Q: Why is the 15C01C-TB-E listed as obsolete?

A: The 15C01C-TB-E has been discontinued by the manufacturer. The 2SD1048-7-TB-E is the active equivalent part maintained in current production and inventory.

Q: What is the maximum operating temperature difference between these parts?

A: The 15C01C-TB-E operates to 150°C maximum junction temperature, while the 2SD1048-7-TB-E operates to 125°C. Applications requiring operation above 125°C require thermal margin analysis.

Q: Are there differences in DC current gain between these transistors?

A: The 15C01C-TB-E specifies minimum hFE of 300 at 10 mA, 2V, while the 2SD1048-7-TB-E specifies minimum hFE of 200 at 50 mA, 2V. Gain specifications are measured at different collector current points and must be evaluated within the context of the specific application circuit.

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