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STS2DPFS20V
STMicroelectronics
MOSFET P-CH 20V 2.5A 8SO
24328 Pcs New Original In Stock
P-Channel 20 V 2.5A (Tc) 2W (Tc) Surface Mount 8-SOIC
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5.0 / 5.0
- (103 Ratings)
STS2DPFS20V
Product Overview
12875908
DiGi Electronics Part Number
STS2DPFS20V-DGManufacturer
STMicroelectronics
STS2DPFS20V
Description
MOSFET P-CH 20V 2.5A 8SOInventory
24328 Pcs New Original In Stock
P-Channel 20 V 2.5A (Tc) 2W (Tc) Surface Mount 8-SOIC
Quantity
Minimum 1
Minimum 1
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STS2DPFS20V Technical Specifications
Category
Transistors, FETs, MOSFETs, Single FETs, MOSFETs
Packaging
Tape & Reel (TR)
Series
STripFET™ II
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.7V, 4.5V
Rds On (Max) @ Id, Vgs
200mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id
600mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs
4.7 nC @ 4.5 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
315 pF @ 15 V
FET Feature
Schottky Diode (Isolated)
Power Dissipation (Max)
2W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SOIC
Package / Case
8-SOIC (0.154", 3.90mm Width)
Base Product Number
STS2D
Datasheet & Documents
HTML Datasheet
STS2DPFS20V-DG
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Additional Information
Other Names
497-3225-1
497-3225-2
497-3225-2-NDR
STS2DPFS20V-E
497-3225-1-NDR
Standard Package
2,500
Reviews
5.0/5.0-(Show up to 5 Ratings)
December 02, 2025
Leur communication claire et directe facilite grandement notre collaboration.
December 02, 2025
Leur professionnalisme et leur souci de la qualité se ressentent dans chaque interaction.
December 02, 2025
I can count on DiGi Electronics for consistent quality and fair, transparent prices.
December 02, 2025
Superior packaging ensures my products arrive in pristine condition.
December 02, 2025
DiGi Electronics’ quick turnaround on orders is very reassuring for my emergency needs.
December 02, 2025
The consistency and reliability of their products are truly impressive.
December 02, 2025
Navigation on the site is very user-friendly, with helpful categories and filters making shopping easier.
December 02, 2025
Received my order in no time with reliable packaging.
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Frequently Asked Questions (FAQ)
Can the STS2DPFS20V P-Channel MOSFET be safely replaced with the AO3401A in a 3.3V logic-level power switching application, and what are the key reliability risks?
While the AO3401A has a lower Rds(on) and is commonly used in 3.3V systems, direct replacement of the STS2DPFS20V requires careful evaluation. The STS2DPFS20V is rated for a minimum Vgs(th) of 600mV and fully enhanced at 2.7V, making it suitable for 3.3V drive, but the AO3401A’s higher gate charge (8.5 nC vs. 4.7 nC) may slow switching in high-frequency applications and increase driver power loss. Additionally, the STS2DPFS20V includes an integrated Schottky diode for improved body diode recovery, which the AO3401A lacks—this can lead to higher reverse recovery losses in inductive load scenarios. If your design involves motor drives or relay switching, this omission increases EMI and thermal stress. Always validate thermal performance and switching waveforms under worst-case conditions before committing to the AO3401A as a drop-in replacement.
What are the thermal design constraints when using the STS2DPFS20V in a compact 8-SOIC package without a heatsink, especially near its 2W power dissipation limit?
The STS2DPFS20V in the 8-SOIC package has a thermal resistance (RθJA) of approximately 62.5°C/W, meaning dissipating 2W without a heatsink would raise the junction temperature by ~125°C above ambient. At 25°C ambient, this exceeds the 150°C Tj(max), risking thermal runaway. To safely approach 2W, you must use a large thermal pad on the PCB with multiple vias to an internal ground plane or bottom-layer copper pour. Even then, sustained operation above 1.2W typically requires forced airflow or a small heatsink. For battery-powered or enclosed designs, consider derating to ≤1W and monitoring case temperature. Always perform thermal imaging or thermocouple testing under real load conditions to avoid localized hot spots that datasheet averages may not capture.
Is the STS2DPFS20V suitable for hot-swap or inrush current control applications given its SOIC package and lack of avalanche rating?
The STS2DPFS20V is not recommended for hot-swap or high-inrush applications due to its 8-SOIC package limitations and absence of specified avalanche energy ratings (EAS or IAR). During hot-plug events, inductive kickback or capacitive load charging can cause voltage spikes exceeding the 20V Vdss, leading to unclamped inductive switching (UIS) failure. Unlike ruggedized MOSFETs (e.g., ST’s STL6P3LLH6 in PowerFLAT), the STS2DPFS20V lacks guaranteed UIS robustness. Additionally, the small package limits transient thermal handling. If you must use it in such roles, add external TVS diodes, current-limiting resistors, or a soft-start circuit with a dedicated controller (e.g., TPS2490) to mitigate stress. For new designs, consider migrating to a more robust alternative like the DMP2045LVT (Diodes Inc.) with built-in ESD and better transient tolerance.
How does the integrated Schottky diode in the STS2DPFS20V affect efficiency in synchronous buck converter designs compared to standard MOSFETs without it?
The isolated Schottky diode in the STS2DPFS20V reduces body diode conduction losses during dead time in synchronous buck converters by providing a lower forward voltage drop (~0.3–0.4V) compared to the intrinsic body diode (~0.7–1.0V). This improves light-load efficiency and reduces reverse recovery charge (Qrr), minimizing shoot-through risk and switching noise. However, the benefit is marginal if dead times are already minimized (<50 ns) or if a dedicated low-side FET with very low Qrr is used. In high-frequency designs (>500 kHz), the reduced Qrr can lower gate driver stress and EMI. That said, the STS2DPFS20V’s relatively high Rds(on) (200mΩ) limits its use to low-current buck stages (<2A output). For higher efficiency, consider replacing it with a modern low-Qg, low-Rds(on) alternative like the Vishay SiZ340DT, but only if the Schottky feature isn’t critical for your dead-time management strategy.
Given that the STS2DPFS20V is obsolete, what are the most reliable second-source or upgrade paths that maintain compatibility in footprint, voltage, and logic-level drive?
Since the STS2DPFS20V is obsolete, sourcing should focus on electrically and mechanically compatible successors. The Diodes Incorporated DMP2045LVT is a strong candidate: it comes in the same 8-SOIC package, supports 20V Vdss, 2.5A Id, and is fully enhanced at 2.5V Vgs with Rds(on) of 180mΩ @ 4.5V—slightly better than the STS2DPFS20V. It also includes ESD protection and is actively stocked. Another option is the Infineon BSC020P02NS G, which offers lower Rds(on) (20mΩ) but in a larger SuperSO8 package, requiring layout changes. Avoid generic Chinese clones unless verified against ST’s original test reports. Always cross-check gate charge, Ciss, and thermal performance in your actual switching circuit, as parametric differences—even within same specs—can affect stability in feedback-controlled power stages. Request manufacturer longevity commitments if designing for long-life industrial systems.
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STS2DPFS20V CAD Models
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