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2N5321
Solid State Inc.
TRANS NPN 50V 2A TO39
2481 Pcs New Original In Stock
Bipolar (BJT) Transistor NPN 50 V 2 A 1 W Through Hole TO-39
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Minimum 1
5.0 / 5.0
- (317 Ratings)
2N5321
Product Overview
12964154
DiGi Electronics Part Number
2N5321-DGManufacturer
Solid State Inc.
2N5321
Description
TRANS NPN 50V 2A TO39Inventory
2481 Pcs New Original In Stock
Bipolar (BJT) Transistor NPN 50 V 2 A 1 W Through Hole TO-39
Quantity
Minimum 1
Minimum 1
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2N5321 Technical Specifications
Category
Transistors, Bipolar (BJT), Single Bipolar Transistors
Packaging
Bulk
Series
-
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
2 A
Voltage - Collector Emitter Breakdown (Max)
50 V
Vce Saturation (Max) @ Ib, Ic
800mV @ 50mA, 500mA
Current - Collector Cutoff (Max)
5mA
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 500mA, 4V
Power - Max
1 W
Frequency - Transition
-
Operating Temperature
-65°C ~ 200°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
Supplier Device Package
TO-39
Datasheet & Documents
Datasheets
Download 2N5321 Product Specification (PDF)
HTML Datasheet
2N5321-DG
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.10.0080
Additional Information
Other Names
2383-2N5321
Standard Package
10
Reviews
5.0/5.0-(Show up to 5 Ratings)
December 02, 2025
Je suis ravi des prix et de la vitesse de livraison, merci DiGi Electronics.
December 02, 2025
コスト面の透明性と物流の正確さに感謝しています。非常に信頼しています。
December 02, 2025
I feel confident purchasing from DiGi Electronics knowing their products are dependable.
December 02, 2025
Their customer service makes me want to come back again and again.
December 02, 2025
The emphasis on packaging quality gives us confidence in their shipments.
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Frequently Asked Questions (FAQ)
When designing in the 2N5321, what thermal considerations should be addressed to avoid overheating in a 1W continuous operation at elevated ambient temperatures?
When operating the 2N5321 near its 1W maximum power dissipation, especially in high ambient temperatures (e.g., >75°C), ensure adequate PCB copper pour or external heatsinking despite its TO-39 metal can package. Without a heatsink, thermal resistance (junction-to-ambient) can exceed 300°C/W, risking junction temperatures above the 200°C max rating. Use forced air or derate power by at least 50% above 100°C ambient to maintain reliability. Monitor temperature with a thermal model or prototype measurement under worst-case load and bias conditions.
Can the 2N5321 be used as a direct replacement for the 2N2222A in a high-current switching application, and what design risks should be evaluated?
While the 2N5321 can handle higher current (2A vs. 600mA) and voltage (50V vs. 40V) than the 2N2222A, it is not a direct drop-in replacement due to differing gain profiles and TO-39 vs. TO-92 packaging. The 2N5321 has a lower guaranteed hFE (30 min @ 500mA) compared to many 2N2222A variants (hFE >100), which may require increased base drive current. Verify saturation in switching applications with Ib ≥ Ic/10, and confirm mechanical fit and PCB layout compatibility due to the larger metal can package.
How does the 2N5321 perform in high-frequency switching circuits, and what are the limitations compared to modern switching transistors like the MMBT2222?
The 2N5321 lacks a specified transition frequency (fT) in its datasheet, indicating it is optimized for linear or low-frequency switching (<100 kHz), not high-speed applications. In contrast, the MMBT2222 has an fT around 300 MHz, making it far superior for fast switching. Use the 2N5321 only in audio amplifiers, relay drivers, or low-speed power control where switching losses are manageable. For PWM or SMPS designs above 50 kHz, consider modern BJTs or MOSFETs to avoid excessive heat and switching inefficiency.
What are the risks of using the 2N5321 in a parallel transistor configuration for higher current loads, and how can imbalance be prevented?
Paralleling 2N5321 transistors introduces risks of current hogging due to negative temperature coefficient of Vbe and manufacturing variance in hFE. Since one device may conduct more current and self-heat, thermal runaway can occur even with matched units. To mitigate, use individual emitter resistors (e.g., 0.1–0.5 Ω), closely thermally couple devices, and ensure identical PCB trace lengths. Prefer a single higher-rated transistor or a dedicated power Darlington if available. The 2N5321 was not designed for paralleling, so this approach requires careful prototyping and thermal monitoring.
In safety-critical or industrial applications, how reliable is the 2N5321 over temperature extremes, and what long-term failure mechanisms should be considered?
The 2N5321 supports an extended operating junction temperature range (-65°C to 200°C), making it suitable for harsh environments, but long-term reliability depends on stress mitigation. Key failure mechanisms include bond wire fatigue due to thermal cycling, moisture ingress (though packaged in hermetic metal TO-39), and parameter drift at elevated temperatures. To enhance reliability, operate below 150°C TJ, avoid rapid thermal transients, and conformally coat assemblies in humid environments. Prefer the 2N5321 over plastic-packaged BJTs where long life and thermal stability are critical, but validate performance in environmental stress testing.
Quality Assurance (QC)
DiGi ensures the quality and authenticity of every electronic component through professional inspections and batch sampling, guaranteeing reliable sourcing, stable performance, and compliance with technical specifications, helping customers reduce supply chain risks and confidently use components in production.
2N5321 CAD Models
Solid State Inc. 2N5321 PCB symbols & footprints
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