DMP4025LSDQ-13 >
DMP4025LSDQ-13
Diodes Incorporated
MOSFET 2P-CH 40V 5.8A 8SO
2615 Pcs New Original In Stock
Mosfet Array 40V 5.8A (Ta) 1.25W (Ta) Surface Mount 8-SO
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DMP4025LSDQ-13 Diodes Incorporated
5.0 / 5.0 - (499 Ratings)

DMP4025LSDQ-13

Product Overview

12979190

DiGi Electronics Part Number

DMP4025LSDQ-13-DG
DMP4025LSDQ-13

Description

MOSFET 2P-CH 40V 5.8A 8SO

Inventory

2615 Pcs New Original In Stock
Mosfet Array 40V 5.8A (Ta) 1.25W (Ta) Surface Mount 8-SO
Quantity
Minimum 1

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In Stock (All prices are in USD)
  • QTY Target Price Total Price
  • 2500 0.5404 1350.9665
  • 5000 0.5092 2546.1780
  • 12500 0.4857 6071.6950
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DMP4025LSDQ-13 Technical Specifications

Category Transistors, FETs, MOSFETs, FET, MOSFET Arrays

Manufacturer Diodes Incorporated

Packaging Tape & Reel (TR)

Series -

Product Status Active

Technology MOSFET (Metal Oxide)

Configuration 2 P-Channel (Dual)

FET Feature -

Drain to Source Voltage (Vdss) 40V

Current - Continuous Drain (Id) @ 25°C 5.8A (Ta)

Rds On (Max) @ Id, Vgs 25mOhm @ 3A, 10V

Vgs(th) (Max) @ Id 1.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs 33.7nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds 1640pF @ 20V

Power - Max 1.25W (Ta)

Operating Temperature -55°C ~ 150°C (TJ)

Grade Automotive

Qualification AEC-Q101

Mounting Type Surface Mount

Package / Case 8-SOIC (0.154", 3.90mm Width)

Supplier Device Package 8-SO

Base Product Number DMP4025

Datasheet & Documents

HTML Datasheet

DMP4025LSDQ-13-DG

Environmental & Export Classification

RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095

Additional Information

Other Names
31-DMP4025LSDQ-13CT
31-DMP4025LSDQ-13TR
31-DMP4025LSDQ-13DKR
Standard Package
2,500

Alternative Parts

View Details
PART NUMBER
MANUFACTURER
QUANTITY AVAILABLE
DiGi PART NUMBER
UNIT PRICE
SUBSTITUTE TYPE
SI4909DY-T1-GE3
Vishay Siliconix
4581
SI4909DY-T1-GE3-DG
0.0351
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5.0/5.0-(Show up to 5 Ratings)
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December 02, 2025
5.0
Their affordable prices ensure that the packaging quality is accessible to all consumers.
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December 02, 2025
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Frequently Asked Questions (FAQ)

Can the DMP4025LSDQ-13 be used as a drop-in replacement for the SI4909DY-T1-GE3 in a 12V automotive power management circuit, and what layout or thermal considerations should I account for?

The DMP4025LSDQ-13 is a viable functional replacement for the SI4909DY-T1-GE3 in many 12V automotive applications due to its similar 40V Vdss, dual P-channel configuration, and AEC-Q101 qualification. However, the DMP4025LSDQ-13 has a slightly higher Rds(on) (25mΩ vs. ~18mΩ at 10V Vgs), which may increase conduction losses in high-current paths. Ensure your PCB layout includes adequate copper pour for thermal dissipation, as both devices are in 8-SOIC packages with limited heatsinking. Verify gate drive compatibility—both require ~10V for full enhancement—and confirm that the DMP4025LSDQ-13’s lower gate charge (33.7nC vs. ~40nC) does not cause unintended shoot-through in complementary switching topologies. Always validate under worst-case load and temperature conditions.

What are the key reliability risks when using the DMP4025LSDQ-13 in high-vibration automotive environments, and how can I mitigate them?

As an AEC-Q101 qualified device, the DMP4025LSDQ-13 is designed for automotive stress conditions, including temperature cycling and humidity. However, in high-vibration scenarios (e.g., under-hood applications), mechanical stress on the 8-SOIC package solder joints can lead to fatigue over time. To mitigate this, use conformal coating to reduce moisture ingress and mechanical strain, ensure proper PCB stiffening near the component, and follow IPC-7351 land pattern guidelines with adequate solder fillets. Avoid placing the DMP4025LSDQ-13 near board edges or connectors where flexure is highest. Additionally, perform thermal cycling tests during validation to catch latent solder joint weaknesses early.

How does the DMP4025LSDQ-13 perform in parallel operation for higher current loads, and what matching criteria are critical to avoid current imbalance?

While the DMP4025LSDQ-13 is not specifically rated for parallel operation, it can be used in parallel for increased current handling if strict matching is applied. The primary risk is current imbalance due to threshold voltage (Vgs(th)) and Rds(on) variation between devices—even within the same batch. To minimize this, select units from the same reel, ensure symmetric PCB layout with matched trace lengths and thermal coupling, and consider adding small source resistors (e.g., 0.1–0.5Ω) to promote current sharing. Monitor junction temperatures closely, as localized heating can exacerbate mismatch. For mission-critical high-current designs, consider a single higher-current MOSFET instead to avoid complexity and reliability concerns.

What gate drive voltage should I use for the DMP4025LSDQ-13 in a 3.3V logic-level system, and will it fully enhance without performance degradation?

The DMP4025LSDQ-13 has a maximum Vgs(th) of 1.8V, but it is not optimized for 3.3V logic drive. At 3.3V Vgs, the Rds(on) will be significantly higher than the specified 25mΩ (measured at 10V), leading to increased conduction losses and potential thermal runaway under load. For reliable operation, use a gate driver or level shifter to provide at least 8–10V Vgs. If 3.3V drive is mandatory, consult the output characteristics curve in the datasheet to estimate Rds(on) at 3.3V and derate the current accordingly—expect ~2–3x higher resistance. This trade-off may be acceptable in low-duty-cycle or low-current applications, but not in continuous high-load scenarios.

Is the DMP4025LSDQ-13 suitable for reverse battery protection in a 24V truck electrical system, and what external components are needed to ensure robustness?

The DMP4025LSDQ-13 can be used for reverse battery protection in 24V systems, but with caveats. Its 40V Vdss rating provides minimal headroom (only ~16V margin) over a 24V nominal system that can spike to 35–40V during load dump events. To ensure reliability, include a transient voltage suppressor (TVS) diode rated for ISO 7637-2 pulses and a series fuse for overcurrent protection. Configure the dual P-channel FETs in a back-to-back topology to block reverse current in both directions. Ensure the gate is pulled to source via a resistor to keep the FETs off during reverse polarity. Given the tight voltage margin, consider a higher-voltage alternative (e.g., 60V-rated MOSFETs) for harsh truck environments unless system-level clamping is guaranteed.

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