TSM60N750CP ROG Equivalent & Substitute Parts

Part Overview

The TSM60N750CP ROG is an N-Channel MOSFET rated for 600V drain-to-source voltage with 6A continuous drain current in a Surface Mount TO-252 (DPAK) package. This device is classified as Obsolete, necessitating identification of equivalent and substitute components for ongoing design support and procurement continuity. The part is RoHS3 Compliant with unlimited moisture sensitivity level (MSL 1) and is suitable for applications requiring high-voltage switching in compact surface-mount form factors.

Substiute Parts

TSM60N750CP ROG

Taiwan Semiconductor CorporationIn Stock: 961TSM60N750CP ROG Datasheet

Current PartRFQ

IPD60R950C6ATMA1

Infineon TechnologiesIn Stock: 480177IPD60R950C6ATMA1 Datasheet

SimilarRFQ

SPD04N50C3ATMA1

Infineon TechnologiesIn Stock: 250454SPD04N50C3ATMA1 Datasheet

SimilarRFQ

TK560P60Y,RQ

Toshiba Semiconductor and StorageIn Stock: 2379TK560P60Y,RQ Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the TSM60N750CP ROG is determined by the following critical parameters:

Mandatory Matching Criteria:

• Drain to Source Voltage (Vdss): 600V minimum
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Mounting Type: Surface Mount
• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)

Allowable Variation Criteria:

• Current - Continuous Drain (Id) @ 25°C: Equal to or greater than 6A
• Rds On (Max): Equal to or less than 750mOhm (lower resistance preferred for thermal performance)
• Operating Temperature Range: Must encompass -55°C to 150°C
• RoHS Status: ROHS3 Compliant
• Moisture Sensitivity Level: MSL 1 (Unlimited)

Substitute parts are identified based on electrical compatibility within the specified voltage and current ratings, mechanical compatibility with the TO-252 package, and compliance with environmental standards. Parts with lower drain current ratings or lower voltage ratings are not suitable for direct substitution.

Parameter Comparison

Engineering Selection Recommendations

IPD60R950C6ATMA1 (Infineon Technologies CoolMOS™ C6 Series)

This substitute maintains the 600V Vdss rating and TO-252 package compatibility. The part is Active status, ensuring long-term availability and supply chain continuity. The continuous drain current of 4.4A is lower than the original 6A specification; applications requiring the full 6A rating must account for this reduced current capacity. The higher Rds On value (950mOhm versus 750mOhm) results in increased power dissipation at equivalent current levels. The lower maximum gate supply voltage (±20V versus ±30V) may require gate drive circuit adjustment. This part is suitable for applications where current requirements do not exceed 4.4A and thermal management accommodates the reduced power dissipation rating of 37W.

SPD04N50C3ATMA1 (Infineon Technologies CoolMOS™ Series)

This substitute has a reduced Vdss rating of 500V, which is below the original 600V specification. This part is classified as Not For New Designs, indicating limited future availability and support. The continuous drain current of 4.5A is lower than the original 6A rating. The Vdss reduction of 100V below the original specification restricts this part to applications with maximum operating voltages not exceeding 500V. This substitute is not recommended for new designs or applications requiring the full 600V voltage rating.

TK560P60Y,RQ (Toshiba Semiconductor and Storage DTMOSV Series)

This substitute maintains the 600V Vdss rating and TO-252 package compatibility. The part is Active status, ensuring ongoing availability. The continuous drain current of 7A exceeds the original 6A specification, providing additional current capacity margin. The Rds On value of 560mOhm is lower than the original 750mOhm, resulting in reduced power dissipation and improved thermal performance. The maximum gate supply voltage of ±30V matches the original specification. The power dissipation rating of 60W is comparable to the original 62.5W specification. This part is suitable for direct substitution in applications requiring 600V operation with 6A or greater continuous drain current capability.

Frequently Asked Questions (FAQ)

Q: Can the IPD60R950C6ATMA1 be used as a direct replacement for the TSM60N750CP ROG?

A: The IPD60R950C6ATMA1 is electrically compatible in terms of voltage rating (600V) and package type (TO-252). However, the reduced continuous drain current rating of 4.4A versus 6A requires verification that the application does not exceed this current limit. The higher on-resistance (950mOhm) increases power dissipation compared to the original part. Gate drive circuits designed for ±30V operation must be adjusted for the ±20V maximum gate voltage of this substitute.

Q: Why is the SPD04N50C3ATMA1 not recommended as a substitute?

A: The SPD04N50C3ATMA1 has a Vdss rating of 500V, which is 100V below the original 600V specification. This reduced voltage rating restricts the part to applications with lower maximum operating voltages. Additionally, the part is classified as Not For New Designs, indicating limited future availability and manufacturer support. The continuous drain current of 4.5A is also below the original 6A rating.

Q: Is the TK560P60Y,RQ a suitable direct replacement?

A: The TK560P60Y,RQ is suitable for direct substitution. It maintains the 600V Vdss rating, TO-252 package compatibility, and ±30V gate voltage specification. The 7A continuous drain current exceeds the original 6A requirement, and the 560mOhm on-resistance is lower than the original 750mOhm, resulting in improved thermal performance. The part is Active status, ensuring long-term availability.

Q: What is the significance of the TO-252 package compatibility?

A: The TO-252 (DPAK) package is a three-terminal surface-mount package with two leads and a tab for thermal connection. All substitute parts listed maintain this package specification, ensuring mechanical and thermal compatibility with existing PCB layouts and thermal management designs. No PCB redesign is required for parts with matching TO-252 packaging.

Q: How do differences in gate charge (Qg) affect circuit design?

A: Gate charge determines the energy required to switch the MOSFET on and off. The original part has a gate charge of 10.8nC at 10V. Substitute parts have gate charges ranging from 13nC to 22nC. Higher gate charge values require greater gate drive current or longer switching times. Gate drive circuits must be verified to supply sufficient current for the selected substitute part's gate charge specification.

Q: What does RoHS3 Compliance mean for these parts?

A: RoHS3 Compliance indicates that the part meets the Restriction of Hazardous Substances Directive, restricting the use of specific hazardous materials including lead, cadmium, mercury, and certain flame retardants. All listed parts and the original component are RoHS3 Compliant, ensuring environmental and regulatory compatibility.

Q: Can these parts be used interchangeably in existing designs?

A: Interchangeability depends on the specific application requirements. The TK560P60Y,RQ is the most suitable for direct substitution due to matching voltage and gate voltage specifications with improved on-resistance. The IPD60R950C6ATMA1 requires verification of current requirements and gate drive circuit compatibility. The SPD04N50C3ATMA1 is not suitable due to reduced voltage rating and Not For New Designs status.