TSM4N60ECP ROG N-Channel 600V 4A MOSFET Equivalent & Substitute Parts

Part Overview

The TSM4N60ECP ROG is an N-Channel 600V 4A MOSFET manufactured by Taiwan Semiconductor Corporation in a Surface Mount TO-252 (DPAK) package. This device is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design support and production requirements. The part delivers 86.2W maximum power dissipation and operates at junction temperatures up to 150°C. Equivalent alternatives must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating the same or compatible package footprints.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	4	A
Rds On (Max) @ 2A, 10V	2.5	Ohm
Gate Threshold Voltage (Vgs(th)) @ 250µA	5	V
Gate Charge (Qg) @ 10V	12	nC
Input Capacitance (Ciss) @ 25V	545	pF
Power Dissipation (Max)	86.2	W
Operating Temperature (TJ)	150	°C
Package Type	TO-252 (DPAK)	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution eligibility for the TSM4N60ECP ROG is determined by the following critical parameters:

Voltage Rating: Substitute parts must maintain a Drain to Source Voltage (Vdss) rating equal to or greater than 600V to ensure safe operation in the original application circuit.

Current Capability: The continuous drain current (Id) at 25°C must be equal to or exceed 4A to support the same load conditions without thermal stress.

On-State Resistance (Rds On): The maximum on-state resistance at specified gate and drain conditions must not exceed 2.5 Ohm to maintain equivalent switching losses and thermal performance.

Gate Threshold Voltage (Vgs(th)): The threshold voltage must remain within compatible ranges to ensure proper gate drive compatibility with existing control circuits.

Package Compatibility: All substitute parts must use the TO-252 (DPAK) package or mechanically equivalent variants to maintain PCB footprint compatibility.

Compliance: All parts must maintain ROHS3 compliance and equivalent moisture sensitivity ratings to ensure manufacturing and storage compatibility.

Substitutes are classified into two categories: Manufacturer Recommended (direct functional replacement with active product status) and Similar (functionally equivalent with minor parameter variations requiring application verification).

Parameter Comparison

Parameter	TSM4N60ECP ROG	TSM4NB60CP ROG	IXTY2N65X2	STD3N62K3
Manufacturer	Taiwan Semiconductor	Taiwan Semiconductor	IXYS	STMicroelectronics
Vdss (V)	600	600	650	620
Id @ 25°C (A)	4	4	2	2.7
Rds On (Max) @ 10V (Ohm)	2.5 @ 2A	2.5 @ 2A	2.3 @ 1A	2.5 @ 1.4A
Vgs(th) @ 250µA (V)	5	4.5	5	4.5
Gate Charge (Qg) @ 10V (nC)	12	14.5	4.3	13
Ciss @ 25V (pF)	545	500	180	385
Power Dissipation (Max) (W)	86.2	50	55	45
Operating Temperature (TJ) (°C)	150	-55 to 150	-55 to 150	150
Product Status	Obsolete	Active	Active	Active
Package	TO-252 (DPAK)	TO-252 (DPAK)	TO-252AA (DPAK)	DPAK
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

TSM4NB60CP ROG (Manufacturer Recommended Substitute)

The TSM4NB60CP ROG is the primary recommended substitute for the obsolete TSM4N60ECP ROG. Both devices are manufactured by Taiwan Semiconductor Corporation and share identical electrical specifications for Vdss (600V), Id (4A), and Rds On (2.5 Ohm @ 2A, 10V). The TSM4NB60CP ROG maintains full package compatibility with the TO-252 (DPAK) footprint and achieves ROHS3 compliance. The device is currently in active production status with 736 units in stock. Minor parameter variations include a reduced gate threshold voltage (4.5V versus 5V) and extended operating temperature range (-55°C to 150°C versus 150°C maximum). Power dissipation is reduced to 50W, which represents improved thermal efficiency. This part is suitable for direct replacement in existing designs without circuit modification.

IXTY2N65X2 (Similar Substitute)

The IXTY2N65X2 manufactured by IXYS is an active product offering higher voltage rating (650V) and improved gate charge characteristics (4.3 nC). However, the continuous drain current is reduced to 2A, which is 50% lower than the original specification. This device is suitable only for applications where the 4A current requirement can be reduced or where multiple devices are paralleled. The part maintains TO-252 (DPAK) package compatibility and ROHS3 compliance. The significantly lower input capacitance (180 pF) and gate charge provide faster switching characteristics. Moisture sensitivity is improved to MSL 1 (Unlimited). This substitute requires application-level verification of current requirements before implementation.

STD3N62K3 (Similar Substitute)

The STD3N62K3 manufactured by STMicroelectronics is an active product in the SuperMESH3™ series with a voltage rating of 620V and continuous drain current of 2.7A. The device maintains Rds On specification of 2.5 Ohm and DPAK package compatibility. Gate threshold voltage is reduced to 4.5V, and gate charge is 13 nC. Power dissipation is rated at 45W. The continuous drain current of 2.7A falls between the original 4A specification and the IXTY2N65X2 offering. This part is suitable for applications where current requirements are lower than the original specification or where thermal performance is prioritized. Moisture sensitivity is improved to MSL 1 (Unlimited). Application verification is required to confirm current adequacy.

Frequently Asked Questions (FAQ)

Q: Can the TSM4NB60CP ROG be used as a direct replacement for the TSM4N60ECP ROG without circuit modification?

A: Yes. The TSM4NB60CP ROG maintains identical electrical specifications for voltage rating (600V), continuous drain current (4A), and on-state resistance (2.5 Ohm @ 2A, 10V). The TO-252 (DPAK) package footprint is identical. The extended operating temperature range and improved power dissipation rating make this a direct functional replacement. No circuit modification is required.

Q: Why is the continuous drain current lower in the IXTY2N65X2 and STD3N62K3 substitutes?

A: The IXTY2N65X2 and STD3N62K3 are designed for different application requirements. The IXTY2N65X2 prioritizes higher voltage rating (650V) and lower gate charge for faster switching. The STD3N62K3 emphasizes thermal efficiency with lower power dissipation. Both devices have reduced current ratings (2A and 2.7A respectively) compared to the original 4A specification. Selection depends on whether the application requires the full 4A current capability or can operate at reduced current levels.

Q: Are all substitute parts compatible with the same PCB footprint?

A: Yes. All substitute parts use the TO-252 (DPAK) package or mechanically equivalent variants (TO-252AA). The physical footprint, lead spacing, and mounting requirements are identical or compatible. No PCB redesign is required for any of the listed substitutes.

Q: What is the significance of the power dissipation differences between the main part and substitutes?

A: The TSM4N60ECP ROG is rated for 86.2W maximum power dissipation, while substitutes range from 45W to 55W. Lower power dissipation ratings indicate improved thermal efficiency but may reflect different test conditions or design optimization. When selecting a substitute, verify that the application's actual power dissipation does not exceed the substitute part's rating. Thermal management design should account for the specific power dissipation of the selected device.

Q: Do all parts meet the same compliance and regulatory requirements?

A: Yes. All listed parts maintain ROHS3 compliance and REACH Unaffected status. All parts carry the same ECCN (EAR99) and HTSUS (8541.29.0095) classifications. Moisture sensitivity levels vary: the main part and TSM4NB60CP ROG are MSL 3 (168 Hours), while IXTY2N65X2 and STD3N62K3 are MSL 1 (Unlimited). MSL 1 rating provides superior moisture protection during storage and handling.

Q: What is the impact of gate threshold voltage variation on circuit operation?

A: Gate threshold voltage (Vgs(th)) determines the minimum gate voltage required to turn the device on. The main part specifies 5V, while TSM4NB60CP ROG and STD3N62K3 specify 4.5V, and IXTY2N65X2 specifies 5V. Variations of ±0.5V are within typical gate drive circuit tolerances. If the application uses marginal gate drive voltages, verify that the substitute's threshold voltage remains compatible with the existing drive circuit. Most standard gate drivers accommodate this variation without modification.

Q: Can multiple lower-current substitutes be paralleled to achieve the original 4A specification?

A: Paralleling MOSFETs is possible but requires careful circuit design to ensure balanced current distribution. Gate drive circuits must be modified to accommodate parallel device operation, and PCB layout must minimize parasitic inductance differences between parallel paths. This approach is not recommended as a standard substitution method. Direct replacement with the TSM4NB60CP ROG is the preferred solution when 4A capability is required.

Q: What is the difference between "Manufacturer Recommended" and "Similar" substitute classifications?

A: Manufacturer Recommended substitutes (TSM4NB60CP ROG) are direct functional replacements from the same manufacturer with identical or superior electrical specifications and active product status. Similar substitutes (IXTY2N65X2, STD3N62K3) offer equivalent functionality but with parameter variations that may require application-level verification. Similar substitutes are suitable when the application can accommodate the parameter differences or when specific advantages (higher voltage, lower gate charge, improved thermal efficiency) align with design requirements.

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