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TP65H150LSG Equivalent & Substitute Parts Reference
Part Overview
TP65H150LSG is an N-Channel GaNFET (Gallium Nitride FET) in the 650 V, 15A class, designed for high-efficiency switching applications. The product features a 3-PQFN (8x8) surface mount package and is compliant with ROHS3 standards. As per the supplied parameters, its product status is Obsolete, prompting the need to identify alternative models with matching electrical and mechanical specifications to ensure continuity in design and inventory for existing equipment or new builds.
Substiute Parts
Key Parameters
| Parameter | TP65H150LSG |
|---|---|
| Manufacturer | Transphorm |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 4.8V @ 500µA |
| Gate Charge (Qg) (Max) @ Vgs | 7.1 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 576 pF @ 400 V |
| Power Dissipation (Max) | 69W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 3-PQFN (8x8) |
| Package / Case | 3-PowerDFN |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
Substitute Part Grouping Explanation
Substitute and equivalent parts are selected by strict matching of the following critical electrical and mechanical parameters as defined for transistors, FETs, and MOSFETs:
- FET Type
- Technology
- Drain to Source Voltage (Vdss)
- Current - Continuous Drain (Id) @ 25°C
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Vgs (Max)
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Power Dissipation (Max)
- Operating Temperature
- Mounting Type
- Supplier Device Package
- Package / Case
- RoHS Status
- Moisture Sensitivity Level (MSL)
Substitution is allowed only when these parameters are explicitly provided and matched within category tolerances.
Parameter Comparison
| Parameter | TP65H150LSG | TP65H150G4LSG |
|---|---|---|
| Manufacturer | Transphorm | Transphorm |
| Technology | GaNFET (Gallium Nitride) | GaNFET (Gallium Nitride) |
| FET Type | N-Channel | N-Channel |
| Drain to Source Voltage (Vdss) | 650 V | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) | 13A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 10A, 10V | 180mOhm @ 8.5A, 10V |
| Vgs(th) (Max) @ Id | 4.8V @ 500µA | 4.8V @ 500µA |
| Gate Charge (Qg) (Max) @ Vgs | 7.1 nC @ 10 V | 8 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 576 pF @ 400 V | 598 pF @ 400 V |
| Power Dissipation (Max) | 69W (Tc) | 52W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Supplier Device Package | 3-PQFN (8x8) | 3-PQFN (8x8) |
| Package / Case | 3-PowerDFN | 3-PowerTDFN |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) | 1 (Unlimited) |
| ECCN | EAR99 | EAR99 |
| HTSUS | 8541.29.0095 | 8541.29.0095 |
Engineering Selection Recommendations
TP65H150LSG holds an obsolete status, while TP65H150G4LSG is listed as active. Both parts feature ROHS3 compliance and identical ECCN and HTSUS codes, supporting consistent regulatory and compliance requirements. Moisture Sensitivity Level for TP65H150G4LSG is improved to unlimited, as compared to TP65H150LSG's 168 hours. Package form factors, mounting type, and operational temperature range are matched, supporting straightforward substitution within these constraints.
Frequently Asked Questions (FAQ)
Q1: What electrical parameters must match for safe substitution in this product category?
Electrical compatibility between TP65H150LSG and substitute parts is determined by matching FET type, technology, Drain to Source Voltage (Vdss), current rating, Rds On, gate charge, gate threshold voltage, and input capacitance values.
Q2: Are the package and mounting types equivalent for form-fit replacement?
Both parts use surface mount configuration and 3-PQFN (8x8) supplier device package, supporting direct replacement based on these criteria. Exact package/case types are provided for reference.
Q3: How does compliance (RoHS, ECCN) impact substitution choice?
Both TP65H150LSG and TP65H150G4LSG are ROHS3 compliant and share ECCN EAR99 and HTSUS 8541.29.0095, permitting substitution within designs requiring these certifications.
Q4: Can Moisture Sensitivity Level (MSL) differences affect assembly?
TP65H150G4LSG provides an unlimited MSL, which improves handling flexibility compared to TP65H150LSG’s 168 hour rating.
Q5: Why is the TP65H150G4LSG considered a substitute for TP65H150LSG?
Substitution is supported by matching category parameters including voltage, technology, FET type, package, compliance, and mounting type, fulfilling engineering requirements for component replacement in this class.
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