TIP147FTU Equivalent & Substitute Parts

Part Overview

The TIP147FTU is a PNP Darlington bipolar junction transistor manufactured by onsemi, rated for 100 V collector-emitter breakdown voltage and 10 A maximum collector current in a TO-3PF through-hole package. This component is classified as obsolete, which necessitates identification of equivalent substitute parts for ongoing design requirements and procurement needs. The TIP147FTU delivers 125 W maximum power dissipation with a minimum DC current gain of 1000 at specified operating conditions.

Substiute Parts

TIP147FTU
onsemiIn Stock: 1176TIP147FTU Datasheet
TIP147FTU
Current Part
TIP147
NTE Electronics, IncIn Stock: 15234TIP147 Datasheet
TIP147
Direct

Key Parameters

Parameter Value Unit
Transistor Type PNP - Darlington
Current - Collector (Ic) (Max) 10 A
Voltage - Collector Emitter Breakdown (Max) 100 V
Power - Max 125 W
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 5A, 4V
Vce Saturation (Max) @ Ib, Ic 3V @ 40mA, 10A
Operating Temperature (Max) 150 °C (TJ)
Mounting Type Through Hole
Package / Case TO-3P-3

Substitute Part Grouping Explanation

Substitution of the TIP147FTU is determined by electrical and mechanical parameter alignment within the transistor category. The primary substitution criteria are:

Electrical Parameters (Critical):

  • Maximum collector current: 10 A
  • Maximum collector-emitter breakdown voltage: 100 V
  • Maximum power dissipation: 125 W
  • DC current gain minimum: 1000 @ 5A, 4V
  • Transistor polarity: PNP configuration

Mechanical Parameters (Critical):

  • Mounting type: Through Hole
  • Package compatibility: TO-3P or equivalent footprint

The TIP147 (NTE Electronics, Inc) qualifies as a substitute based on matching electrical ratings and through-hole mounting. However, the package designation differs (TO-218 versus TO-3PF), which affects physical board layout and thermal management characteristics.

Parameter Comparison

Parameter TIP147FTU (onsemi) TIP147 (NTE Electronics) Match Status
Transistor Type PNP - Darlington PNP Partial
Current - Collector (Ic) (Max) 10 A 10 A Match
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V Match
Power - Max 125 W 125 W Match
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 5A, 4V 1000 @ 5A, 4V Match
Operating Temperature (Max) 150°C (TJ) 150°C (TJ) Match
Mounting Type Through Hole Through Hole Match
Package / Case TO-3P-3 TO-218-3 Different
RoHS Status ROHS3 Compliant RoHS non-compliant Different

Engineering Selection Recommendations

The TIP147 from NTE Electronics matches the electrical specifications of the TIP147FTU across all critical parameters: collector current, breakdown voltage, power rating, and DC current gain. Both components operate at identical maximum junction temperatures and employ through-hole mounting technology.

The primary distinction is packaging: the TIP147FTU uses TO-3PF while the NTE substitute uses TO-218. This package difference affects thermal dissipation characteristics and printed circuit board layout requirements. The TO-3PF package typically provides superior thermal performance due to larger surface area and direct mounting capability.

Compliance status differs between the two parts. The TIP147FTU is ROHS3 compliant, while the NTE TIP147 is RoHS non-compliant. Design environments with RoHS requirements must account for this distinction.

The onsemi TIP147FTU is classified as obsolete, whereas the NTE TIP147 maintains active product status, ensuring continued availability for procurement.

Frequently Asked Questions (FAQ)

Q: Can the TIP147 (NTE Electronics) directly replace the TIP147FTU in existing designs?

A: Electrical substitution is valid based on matching current, voltage, power, and gain specifications. Physical substitution requires evaluation of package differences. The TO-218 package has different pin spacing and thermal characteristics compared to TO-3PF, necessitating circuit board layout modifications.

Q: What is the significance of the Darlington configuration in the TIP147FTU?

A: The Darlington configuration in the TIP147FTU provides higher current gain compared to standard PNP transistors. The NTE TIP147 is specified as standard PNP, not Darlington. This affects base drive requirements and switching characteristics in circuit applications.

Q: Are there thermal management differences between TO-3PF and TO-218 packages?

A: Package geometry directly influences thermal dissipation. The TO-3PF package typically accommodates larger heat sink mounting surfaces. The TO-218 package is physically smaller. Thermal design calculations must account for these package-specific characteristics.

Q: What compliance considerations apply when selecting between these parts?

A: The TIP147FTU is ROHS3 compliant, while the NTE TIP147 is RoHS non-compliant. Applications subject to RoHS directives must use the onsemi part or identify alternative compliant substitutes.

Q: Why is the TIP147FTU classified as obsolete?

A: Obsolescence reflects manufacturer discontinuation decisions. The NTE TIP147 maintains active status, providing a path for continued procurement of electrically equivalent functionality.

Q: What parameters must remain constant for valid substitution?

A: Collector current (10 A), collector-emitter breakdown voltage (100 V), power dissipation (125 W), and DC current gain (1000 @ 5A, 4V) are non-negotiable for electrical equivalence. Mounting type (through-hole) is required for mechanical compatibility.

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