STTH108 Equivalent & Substitute Parts

Part Overview

The STTH108 is a general-purpose rectifier diode manufactured by STMicroelectronics, rated for 800 V DC reverse voltage and 1 A average rectified current in a through-hole DO-41 package. This component is classified as Active product status and is ROHS3 compliant. Substitute parts are identified when equivalent electrical performance and mechanical compatibility are required due to inventory constraints, manufacturing discontinuation, or design flexibility across multiple qualified suppliers.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	800	V
Current - Average Rectified (Io)	1	A
Voltage - Forward (Vf) (Max) @ If	1.65	V @ 1 A
Speed	Fast Recovery ≤ 500ns, > 200mA (Io)	—
Reverse Recovery Time (trr)	75	ns
Current - Reverse Leakage @ Vr	5	µA @ 800 V
Mounting Type	Through Hole	—
Package / Case	DO-204AL, DO-41, Axial	—
Operating Temperature - Junction (Max)	175	°C
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitute parts for the STTH108 are grouped based on the following electrical and mechanical criteria:

Primary Substitution Criteria:

Voltage - DC Reverse (Vr) (Max): 800 V or higher
Current - Average Rectified (Io): 1 A
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, or Axial compatible
Speed: Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns or lower
Current - Reverse Leakage @ Vr: 5 µA or lower at rated voltage
RoHS Status: ROHS3 Compliant

Grouping Logic:

Group 1 - Direct Electrical Equivalents (800 V, 1 A, Fast Recovery): Parts that match all primary electrical specifications and fast recovery characteristics. These include UF1006-T, EGP10K, and UF4006. These parts are interchangeable with the STTH108 in applications requiring 800 V reverse voltage rating.

Group 2 - Higher Voltage Rating (1000 V, 1 A, Fast Recovery): Parts that exceed the voltage specification while maintaining 1 A current rating and fast recovery characteristics. These include STTH110RL and UF1007-T. These parts provide additional voltage margin and are suitable for applications where higher voltage headroom is beneficial.

Group 3 - Same Voltage, Different Recovery Characteristics (800 V, 1 A, Standard Recovery): The part 1N4006-E3/54 matches voltage and current specifications but operates with standard recovery characteristics (>500ns). This part is suitable only for applications where recovery speed is not a critical design parameter.

Parameter Comparison

Part Number	Manufacturer	Vr (Max) [V]	Io [A]	Vf (Max) @ If [V]	Speed	trr [ns]	Ir @ Vr [µA]	Package	Tj (Max) [°C]	RoHS
STTH108	STMicroelectronics	800	1	1.65 @ 1 A	Fast Recovery ≤ 500ns	75	5 @ 800 V	DO-41	175	ROHS3
STTH110RL	STMicroelectronics	1000	1	1.7 @ 1 A	Fast Recovery ≤ 500ns	75	10 @ 1000 V	DO-41	175	ROHS3
1N4006-E3/54	Vishay General Semiconductor	800	1	1.1 @ 1 A	Standard Recovery >500ns	—	5 @ 800 V	DO-204AL (DO-41)	150	ROHS3
EGP10K	Fairchild Semiconductor	800	1	1.7 @ 1 A	Fast Recovery ≤ 500ns	75	5 @ 800 V	DO-204AL (DO-41)	150	—
UF1006-T	Diodes Incorporated	800	1	1.7 @ 1 A	Fast Recovery ≤ 500ns	75	5 @ 800 V	DO-41	150	ROHS3
UF1007-T	Diodes Incorporated	1000	1	1.7 @ 1 A	Fast Recovery ≤ 500ns	75	5 @ 1000 V	DO-41	150	ROHS3
UF4006	Fairchild Semiconductor	800	1	1.7 @ 1 A	Fast Recovery ≤ 500ns	75	5 @ 800 V	DO-41	175	—

Engineering Selection Recommendations

For Direct Replacement (Identical Electrical Performance):

Select UF1006-T, EGP10K, or UF4006 when the application requires exact electrical equivalence to the STTH108. All three parts maintain 800 V reverse voltage, 1 A current rating, fast recovery characteristics (75 ns), and 5 µA reverse leakage. UF1006-T and UF4006 support the full 175°C junction temperature rating of the STTH108. All candidates are ROHS3 compliant or unaffected by REACH regulations.

For Higher Voltage Margin Applications:

Select STTH110RL or UF1007-T when the circuit design benefits from increased voltage headroom. Both parts provide 1000 V reverse voltage rating while maintaining 1 A current and fast recovery characteristics. STTH110RL is the manufacturer-recommended upgrade from STMicroelectronics. Both parts are ROHS3 compliant.

For Standard Recovery Applications:

Select 1N4006-E3/54 only when circuit operation does not depend on fast recovery characteristics. This part matches the 800 V and 1 A specifications but operates with standard recovery (>500ns). Operating temperature is limited to 150°C maximum junction temperature.

Compliance Considerations:

All recommended substitutes maintain ROHS3 compliance and REACH unaffected status. Moisture Sensitivity Level (MSL) is 1 (Unlimited) for all parts, indicating no special moisture handling requirements during storage or assembly.

Frequently Asked Questions (FAQ)

Q: Can STTH110RL be used as a direct replacement for STTH108?

A: STTH110RL is electrically compatible with the STTH108 for applications operating at or below 800 V. The higher 1000 V rating provides additional voltage margin without affecting performance at lower voltages. Both parts share identical 1 A current rating, fast recovery characteristics (75 ns), and through-hole DO-41 packaging. The primary difference is increased reverse leakage current (10 µA at 1000 V versus 5 µA at 800 V on the STTH108).

Q: What is the difference between fast recovery and standard recovery diodes?

A: Recovery speed refers to the reverse recovery time (trr), which is the time required for a diode to stop conducting when the applied voltage reverses. The STTH108 specifies fast recovery at 75 ns. The 1N4006-E3/54 operates with standard recovery (>500ns). Fast recovery diodes are required in high-frequency switching applications, while standard recovery diodes are suitable for low-frequency rectification. Selection depends on circuit operating frequency and switching requirements.

Q: Are all substitute parts available in the same packaging?

A: All substitute parts are available in through-hole axial packaging compatible with DO-41 or DO-204AL designations. Specific packaging formats vary by supplier: STTH110RL is supplied in Cut Tape (CT), UF1006-T in Tape & Reel (TR), UF1007-T in Cut Tape (CT), EGP10K in Bulk, and UF4006 in standard format. Verify packaging compatibility with assembly equipment and procurement requirements before selection.

Q: What is the operating temperature range for each substitute?

A: The STTH108 supports junction temperatures up to 175°C. STTH110RL and UF4006 maintain this 175°C maximum rating. UF1006-T, UF1007-T, and 1N4006-E3/54 are rated to 150°C maximum junction temperature. EGP10K operates from −65°C to 150°C. Select parts based on thermal design requirements and maximum ambient temperature conditions in the application.

Q: Is RoHS compliance maintained across all substitutes?

A: STTH108, STTH110RL, UF1006-T, UF1007-T, and 1N4006-E3/54 are all ROHS3 compliant. EGP10K and UF4006 do not specify RoHS status in the provided data. Verify RoHS compliance requirements with procurement and regulatory documentation before final part selection.

Q: What is the significance of reverse leakage current specifications?

A: Reverse leakage current (Ir) represents the small current that flows through a reverse-biased diode. The STTH108 specifies 5 µA at 800 V. Higher voltage-rated parts such as STTH110RL and UF1007-T specify 5 µA at their respective 1000 V rating. Lower leakage current is generally preferred in precision analog circuits and high-impedance applications. For standard rectification applications, leakage current differences are typically not critical.

Q: Can forward voltage drop differences affect circuit performance?

A: Forward voltage drop (Vf) varies slightly among substitutes. The STTH108 specifies 1.65 V at 1 A, while UF1006-T, UF1007-T, UF4006, and STTH110RL specify 1.7 V at 1 A. The 1N4006-E3/54 specifies 1.1 V at 1 A. In rectification circuits, forward voltage drop affects power dissipation and output voltage. In high-current applications, the 0.05 V difference between STTH108 and fast recovery substitutes is typically negligible. The 1N4006-E3/54 with lower forward voltage may reduce power dissipation in some applications.

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