STS9NH3LL N-Channel MOSFET 30V 9A Equivalent & Substitute Parts

Part Overview

The STS9NH3LL is an N-Channel MOSFET manufactured by STMicroelectronics, part of the STripFET™ III series. This device is rated for 30V drain-to-source voltage with 9A continuous drain current and 2.5W power dissipation in a surface mount 8-SOIC package. The part is currently classified as obsolete, making identification of equivalent and substitute components necessary for ongoing production support, design updates, and inventory management. Substitute parts must maintain electrical and mechanical compatibility within the specified parameter ranges to ensure functional equivalence in circuit applications.

Substiute Parts

STS9NH3LL

STMicroelectronicsIn Stock: 31978STS9NH3LL Datasheet

Current PartRFQ

FDS6612A

Fairchild SemiconductorIn Stock: 67646FDS6612A Datasheet

SimilarRFQ

IRF7403TRPBF

Infineon TechnologiesIn Stock: 7169IRF7403TRPBF Datasheet

SimilarRFQ

IRF7807ZTRPBF

Infineon TechnologiesIn Stock: 19482IRF7807ZTRPBF Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the STS9NH3LL are selected based on strict electrical and mechanical parameter alignment. The following criteria determine substitution eligibility:

Primary Matching Criteria:

• FET Type: N-Channel (required)
• Drain to Source Voltage (Vdss): 30V (required)
• Package Type: 8-SOIC surface mount (required)
• Operating Temperature Range: -55°C to 150°C (required)
• Power Dissipation: 2.5W (required)

Secondary Compatibility Parameters:

• Continuous Drain Current (Id): 8.4A to 11A range (acceptable variance)
• Rds On (Max) @ 10V Vgs: 13.8 to 22 mOhm (acceptable variance)
• Gate Charge (Qg): 7.6 to 57 nC (acceptable variance)
• Input Capacitance (Ciss): 560 to 1200 pF (acceptable variance)

All identified substitute parts meet the primary matching criteria and fall within acceptable ranges for secondary parameters. Substitutes are listed with their current product status and compliance certifications.

Parameter Comparison

Engineering Selection Recommendations

FDS6612A (Fairchild Semiconductor)

The FDS6612A is the preferred substitute for new production and design updates. This part is currently in active product status, ensuring long-term availability and supply chain stability. It meets all primary electrical and mechanical requirements with 8.4A continuous drain current, 22 mOhm Rds On, and identical 2.5W power dissipation. The FDS6612A operates across the full -55°C to 150°C temperature range in the same 8-SOIC package. Gate charge is lower at 7.6 nC, and input capacitance is reduced to 560 pF, both favorable characteristics for switching applications. RoHS compliance status is not specified in available documentation.

IRF7807ZTRPBF (Infineon Technologies)

The IRF7807ZTRPBF provides superior current handling capability at 11A continuous drain current with reduced Rds On of 13.8 mOhm at 10V Vgs. This part is classified as "Not For New Designs" but remains available with 19,457 units in stock. It is ROHS3 compliant and maintains the required 2.5W power dissipation and full temperature range. The IRF7807ZTRPBF is suitable for replacement applications where higher current capacity or lower on-resistance is beneficial. Gate charge is 11 nC at 4.5V, and input capacitance is 770 pF at 15V.

IRF7403TRPBF (Infineon Technologies)

The IRF7403TRPBF offers 8.5A continuous drain current with 22 mOhm Rds On at 4A, 10V Vgs. This part is also classified as "Not For New Designs" with 7,155 units available. It is ROHS3 compliant and meets all primary electrical and mechanical specifications. The IRF7403TRPBF exhibits higher gate charge at 57 nC and increased input capacitance at 1200 pF, which may impact switching speed in certain circuit topologies.

Product Status Considerations:

For new designs and long-term production support, the FDS6612A (active status) is the recommended primary choice. The Infineon parts (IRF7807ZTRPBF and IRF7403TRPBF) are suitable for replacement and maintenance applications but are not recommended for new design implementations due to their "Not For New Designs" status.

Frequently Asked Questions (FAQ)

Q: Can the FDS6612A directly replace the STS9NH3LL in existing circuits?

A: Yes. The FDS6612A meets all primary electrical and mechanical requirements: 30V Vdss, 8.4A continuous drain current, 22 mOhm Rds On at 10V Vgs, 2.5W power dissipation, and 8-SOIC package. The lower gate charge (7.6 nC vs. 10 nC) and reduced input capacitance (560 pF vs. 857 pF) are compatible with standard gate drive circuits. Pin configuration and package dimensions are identical.

Q: What is the difference between the IRF7807ZTRPBF and IRF7403TRPBF?

A: The IRF7807ZTRPBF provides higher current capacity (11A vs. 8.5A) and lower on-resistance (13.8 mOhm vs. 22 mOhm at 10V Vgs). However, the IRF7807ZTRPBF exhibits significantly lower gate charge (11 nC vs. 57 nC), resulting in faster switching characteristics. Both parts are packaged in 8-SOIC and operate across -55°C to 150°C. Selection depends on specific circuit current requirements and switching speed needs.

Q: Why is the STS9NH3LL classified as obsolete?

A: The STS9NH3LL is an older generation device from the STripFET™ III series. Obsolescence typically occurs when manufacturers discontinue production in favor of newer technology nodes or product lines. Substitute parts from active product lines (such as FDS6612A) offer equivalent or improved performance with assured long-term availability.

Q: Are all substitute parts RoHS3 compliant?

A: The IRF7807ZTRPBF and IRF7403TRPBF are confirmed ROHS3 compliant. The FDS6612A RoHS compliance status is not specified in the provided technical documentation. Verification with the manufacturer or distributor is necessary if RoHS3 compliance is a design requirement.

Q: Can I use the IRF7807ZTRPBF in applications requiring exactly 9A continuous drain current?

A: Yes. The IRF7807ZTRPBF is rated for 11A continuous drain current, which exceeds the 9A requirement of the STS9NH3LL. The device operates safely at lower current levels. The reduced on-resistance (13.8 mOhm vs. 22 mOhm) results in lower power dissipation at equivalent current levels, providing a performance advantage.

Q: What packaging considerations apply to these substitutes?

A: All substitute parts use the 8-SOIC package with identical 0.154" (3.90mm) width. Pin assignments and lead spacing are compatible with existing PCB layouts designed for the STS9NH3LL. No PCB redesign is required for package accommodation.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) determines the charge required to switch the MOSFET on or off. The FDS6612A (7.6 nC) requires less gate charge than the STS9NH3LL (10 nC), enabling faster switching with lower gate drive power. The IRF7403TRPBF (57 nC) requires significantly more gate charge, potentially requiring higher gate drive current or longer switching times depending on the gate driver circuit design.

Q: Are there inventory considerations for selecting a substitute?

A: Yes. The FDS6612A has 67,600 units in stock, providing excellent availability. The IRF7807ZTRPBF has 19,457 units available, and the IRF7403TRPBF has 7,155 units. For high-volume production, the FDS6612A offers the most secure supply position combined with active product status.