STS4DPF30L MOSFET Equivalent & Substitute Parts

Part Overview

The STS4DPF30L is a dual P-channel MOSFET array manufactured by STMicroelectronics, rated for 30V drain-to-source voltage and 4A continuous drain current in an 8-SOIC surface mount package. This device is part of the STripFET™ series and is classified as obsolete. Due to its obsolete status, equivalent and substitute parts from active manufacturers are necessary for new designs and ongoing production requirements. Substitute parts must maintain compatibility across electrical ratings, package dimensions, and thermal characteristics while meeting current RoHS3 and REACH compliance standards.

Key Parameters

Parameter	STS4DPF30L Value	Unit
Configuration	2 P-Channel (Dual)	—
Drain to Source Voltage (Vdss)	30V	V
Current - Continuous Drain (Id) @ 25°C	4A	A
Rds On (Max) @ Id, Vgs	80mOhm @ 2A, 10V	mOhm
Power - Max	2W	W
Operating Temperature Range	-55°C to 150°C (TJ)	°C
Package / Case	8-SOIC (0.154", 3.90mm Width)	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitute parts for the STS4DPF30L are selected based on the following critical parameters that determine functional equivalence:

Primary Matching Criteria:

Configuration: 2 P-Channel (Dual) MOSFET array
Drain to Source Voltage (Vdss): 30V minimum
Continuous Drain Current (Id): 4A or greater at 25°C
Package: 8-SOIC surface mount with 0.154" (3.90mm) width
Operating Temperature Range: -55°C to 150°C (TJ)
Compliance: RoHS3 compliant, MSL 1

Secondary Compatibility Factors:

Rds On (on-resistance): Lower values indicate improved performance
Gate Charge (Qg): Lower values reduce switching losses
Input Capacitance (Ciss): Affects gate drive requirements
Power dissipation capability: Minimum 2W

Substitute parts are grouped into two categories: direct equivalents (matching all primary criteria with active product status) and compatible alternatives (meeting electrical requirements with potential trade-offs in secondary parameters or product status).

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Power Max (W)	Product Status	Package
STS4DPF30L	STMicroelectronics	30	4	80 @ 2A, 10V	2	Obsolete	8-SOIC
SI4925DDY-T1-GE3	Vishay Siliconix	30	8	29 @ 7.3A, 10V	5	Active	8-SOIC
AO4807	Alpha & Omega Semiconductor	30	6	35 @ 6A, 10V	2	Not For New Designs	8-SOIC
DMP3085LSD-13	Diodes Incorporated	30	3.9	70 @ 5.3A, 10V	1.1	Active	8-SOIC
DMP3098LSD-13	Diodes Incorporated	30	4.4	65 @ 5A, 10V	1.8	Active	8-SOIC
DMP4050SSD-13	Diodes Incorporated	40	4	50 @ 6A, 10V	1.8	Active	8-SOIC
FDS6975	onsemi	30	6	32 @ 6A, 10V	0.9	Active	8-SOIC
IRF7306TRPBF	Infineon Technologies	30	3.6	100 @ 1.8A, 10V	2	Active	8-SOIC
IRF7316TRPBF	Infineon Technologies	30	4.9	58 @ 4.9A, 10V	2	Active	8-SOIC
ZXMP3A16DN8TA	Diodes Incorporated	30	4.2	45 @ 4.2A, 10V	1.8	Active	8-SOIC

Engineering Selection Recommendations

Tier 1 - Direct Replacement (Active Status, Matched Specifications):

The SI4925DDY-T1-GE3 from Vishay Siliconix is the primary recommended substitute. It maintains the 30V Vdss rating, exceeds the 4A continuous drain current requirement at 8A, and is actively manufactured. The device is RoHS3 compliant with MSL 1 rating. The improved on-resistance (29mOhm versus 80mOhm) and higher power rating (5W versus 2W) provide enhanced performance margins. The 8-SOIC package is mechanically and electrically compatible.

Tier 2 - Functional Equivalents (Active Status, Comparable Performance):

The IRF7316TRPBF from Infineon Technologies provides a close electrical match with 30V Vdss, 4.9A continuous drain current, and 2W power rating. The on-resistance of 58mOhm is superior to the original part. This device is actively produced and RoHS3 compliant.

The ZXMP3A16DN8TA from Diodes Incorporated offers 30V Vdss, 4.2A continuous drain current, and 1.8W power rating with 45mOhm on-resistance. This part is actively manufactured and meets all compliance requirements.

The DMP3098LSD-13 from Diodes Incorporated provides 30V Vdss, 4.4A continuous drain current, and 1.8W power rating with 65mOhm on-resistance. This device is actively produced and RoHS3 compliant.

Tier 3 - Alternative Options (Active Status, Extended Voltage or Current):

The DMP4050SSD-13 from Diodes Incorporated offers 40V Vdss (exceeding the 30V requirement) with 4A continuous drain current and 50mOhm on-resistance. This part is suitable for applications requiring higher voltage margin and is actively manufactured.

The FDS6975 from onsemi provides 30V Vdss, 6A continuous drain current, and 32mOhm on-resistance with 0.9W power rating. This device is actively produced and RoHS3 compliant.

The AO4807 from Alpha & Omega Semiconductor is rated for 30V Vdss and 6A continuous drain current with 35mOhm on-resistance. However, this part is classified as "Not For New Designs" and should be avoided for new applications.

Tier 4 - Limited Compatibility (Marginal Specifications):

The DMP3085LSD-13 from Diodes Incorporated provides 30V Vdss but with only 3.9A continuous drain current, which is marginally below the 4A requirement. The 1.1W power rating is also reduced. This part is actively manufactured but should be used only when current and power margins are acceptable for the application.

The IRF7306TRPBF from Infineon Technologies is rated for 30V Vdss and 3.6A continuous drain current, which falls below the 4A specification. The 100mOhm on-resistance is significantly higher than the original part. This device is actively produced but represents a compromise in performance.

Frequently Asked Questions (FAQ)

Q: Can the SI4925DDY-T1-GE3 be used as a direct drop-in replacement for the STS4DPF30L?

A: Yes. The SI4925DDY-T1-GE3 is mechanically and electrically compatible. Both devices use the 8-SOIC package with identical pin spacing (0.154", 3.90mm width). The electrical specifications of the SI4925DDY-T1-GE3 exceed the STS4DPF30L requirements: 8A versus 4A continuous drain current, 5W versus 2W power rating, and superior on-resistance (29mOhm versus 80mOhm). No circuit modifications are required.

Q: What is the significance of the Vdss (Drain to Source Voltage) rating?

A: The Vdss rating specifies the maximum voltage that can be applied between the drain and source terminals without device breakdown. The STS4DPF30L is rated for 30V. Substitute parts must have a Vdss rating equal to or greater than 30V. Parts with higher Vdss ratings (such as DMP4050SSD-13 at 40V) provide additional voltage margin and are acceptable substitutes.

Q: Why is the continuous drain current (Id) specification important for substitution?

A: The continuous drain current rating defines the maximum current the device can conduct continuously at 25°C without exceeding thermal limits. The STS4DPF30L is rated for 4A. Substitute parts must have an Id rating of 4A or greater. Parts with higher current ratings provide additional current capacity and thermal margin.

Q: What does on-resistance (Rds On) represent, and how does it affect substitution?

A: On-resistance is the resistance between drain and source when the MOSFET is fully conducting (gate fully enhanced). Lower on-resistance values result in reduced power dissipation and heat generation. The STS4DPF30L specifies 80mOhm at 2A and 10V gate-source voltage. Substitute parts with lower on-resistance values (such as SI4925DDY-T1-GE3 at 29mOhm) provide improved efficiency. Higher on-resistance values are acceptable if thermal and power dissipation requirements are met.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed in this reference are RoHS3 compliant and have MSL 1 (Unlimited) moisture sensitivity ratings, matching the original STS4DPF30L specifications.

Q: What is the difference between "Active" and "Not For New Designs" product status?

A: "Active" status indicates the manufacturer continues production and supports the part for new designs. "Not For New Designs" status indicates the manufacturer is phasing out the part and recommends alternatives for new applications. The AO4807 carries "Not For New Designs" status and should be avoided for new circuit designs, although it may be acceptable for legacy system maintenance.

Q: Can I use a substitute part with a higher power rating than the original?

A: Yes. A higher power rating indicates the device can dissipate more heat without exceeding thermal limits. This provides additional thermal margin and is beneficial. For example, the SI4925DDY-T1-GE3 with a 5W rating is superior to the STS4DPF30L with a 2W rating.

Q: Why do some substitute parts have lower power ratings than the original?

A: Lower power ratings may result from different die designs, thermal management approaches, or package thermal characteristics. Parts with lower power ratings (such as DMP3085LSD-13 at 1.1W) should be used only when the application's thermal requirements are compatible with the reduced power dissipation capability.

Q: Is the 8-SOIC package identical across all substitute parts?

A: Yes. All substitute parts use the 8-SOIC package with 0.154" (3.90mm) width, ensuring mechanical compatibility with the original STS4DPF30L. Pin assignments and spacing are identical, allowing direct PCB substitution without layout modifications.

Q: What is Gate Charge (Qg), and why is it relevant for substitution?

A: Gate Charge represents the total charge required to fully enhance the MOSFET from off to on state. Lower gate charge values reduce switching losses and simplify gate drive circuit design. The STS4DPF30L specifies 16nC at 5V. Substitute parts with lower gate charge values (such as DMP3098LSD-13 at 7.8nC) reduce switching losses, while higher values require more robust gate drive circuits.

Q: Can I substitute a part with a lower continuous drain current rating?

A: No. Substitute parts must have a continuous drain current rating equal to or greater than 4A. Parts with lower ratings (such as IRF7306TRPBF at 3.6A or DMP3085LSD-13 at 3.9A) do not meet the minimum specification and should not be used unless the application circuit operates at reduced current levels below the substitute part's rating.

Q: What is Input Capacitance (Ciss), and how does it affect circuit performance?

A: Input Capacitance is the capacitance between gate and source terminals and affects gate drive circuit requirements and switching speed. The STS4DPF30L specifies 1350pF at 25V. Substitute parts with lower input capacitance values (such as DMP3098LSD-13 at 336pF) require less gate charge and enable faster switching. Higher values require more robust gate drive circuits but do not prevent substitution.

Q: Are there any thermal considerations when selecting a substitute part?

A: Yes. The operating temperature range (-55°C to 150°C TJ) is identical across all substitute parts. However, on-resistance and power dissipation vary. Parts with lower on-resistance values generate less heat at the same current level. Thermal design should account for the substitute part's on-resistance and power rating to ensure junction temperature remains within the -55°C to 150°C specification.

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